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We use the continuum micromagnetic framework to derive the formulas for compact skyrmion lifetime due to thermal noise in ultrathin ferromagnetic films with relatively weak interfacial Dzyaloshinskii-Moriya interaction. In the absence of a saddle point connecting the skyrmion solution to the ferromagnetic state, we interpret the skyrmion collapse event as ``capture by an absorber'' at microscale. This yields an explicit Arrhenius collapse rate with both the barrier height and the prefactor as functions of all the material parameters, as well as the dynamical paths to collapse., Comment: 6 pages, 1 figure

We studied electric field modification of magnetic properties in a Pt/Co/AlOx trilayer via magneto-optical Kerr microscopy. We observed the spontaneous formation of labyrinthine magnetic domain structure due to thermally activated domain nucleation and propagation under zero applied magnetic field. A variation of the period of the labyrinthine structure under electric field is observed as well as saturation magnetization and magnetic anisotropy variations. Using an analytical formula of the stripe equilibrium width we estimate the variation of the interfacial Dzyaloshinskii-Moriya interaction under electric field as function of the exchange stiffness constant.

The perpendicular magnetic anisotropy at the $\mathrm{Co}$-oxide interface in $\mathrm{Pt}/\mathrm{Co}/{\mathrm{MO}}_{x}$ (${\mathrm{MO}}_{x}={\mathrm{Mg}\mathrm{O}}_{x}$, $\mathrm{Al}{\mathrm{O}}_{x}$, $\mathrm{Tb}{\mathrm{O}}_{x}$) is modified by an electric field using a 10-nm-thick ${\mathrm{Zr}\mathrm{O}}_{2}$ as a solid electrolyte. The large voltage-driven modification of the interfacial magnetic anisotropy and the nonvolatility of the effect is explained in terms of the migration of oxygen ions toward or away from the $\mathrm{Co}/{\mathrm{MO}}_{x}$ interface. While the effect is reversible in ${\mathrm{Pt}/\mathrm{Co}/\mathrm{Al}\mathrm{O}}_{x}$ and ${\mathrm{Pt}/\mathrm{Co}/\mathrm{Tb}\mathrm{O}}_{x}$, where the $\mathrm{Co}$ layer can be oxidized or reduced, in ${\mathrm{Pt}/\mathrm{Co}/\mathrm{Mg}\mathrm{O}}_{x}$ the effect is found to be irreversible. We propose that these differences may be related to the different nature of the ionic conduction within the ${\mathrm{MO}}_{x}$ layers.

International audience; Magnetic skyrmions have been the subject of extensive experimental studies in ferromagnetic thin films and multilayers, revealing a diversity in their size, stability and internal structure. While the orthodox skyrmion theory focuses on the Dzyaloshinskii-Moryia interaction (DMI) and neglects higher-order energy terms, it is becoming clear that the full stray field energy needs to be taken into account to understand these recent observations. Here we present a micromagnetic study based on rigorous mathematical analysis which allows to account for the full stray field energy in the thin film and low DMI regime. In this regime, the skyrmion profile is close to a Belavin-Polyakov profile, which yields analytical expressions for the equilibrium skyrmion radius and energy. The obtained formulas provide a clear identification of Dzyaloshinskii-Moryia and long-range dipolar interactions as two physical mechanisms determining skyrmion size and stability, a consideration of importance for the optimization of skyrmion characteristics for spintronic applications.

We characterize skyrmions in ultrathin ferromagnetic films as local minimizers of a reduced micromagnetic energy appropriate for quasi two-dimensional materials with perpendicular magnetic anisotropy and interfacial Dzyaloshinskii–Moriya interaction. The minimization is carried out in a suitable class of two-dimensional magnetization configurations that prevents the energy from going to negative infinity, while not imposing any restrictions on the spatial scale of the configuration. We first demonstrate the existence of minimizers for an explicit range of the model parameters when the energy is dominated by the exchange energy. We then investigate the conformal limit, in which only the exchange energy survives and identify the asymptotic profiles of the skyrmions as degree 1 harmonic maps from the plane to the sphere, together with their radii, angles and energies. A byproduct of our analysis is a quantitative rigidity result for degree $$\pm \,1$$ harmonic maps from the two-dimensional sphere to itself.

Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices., Comment: 17 pages, 4 figures

International audience; Magnetic skyrmions and bubbles, observed in ferromagnetic thin films with perpendicular magnetic anisotropy, are topological solitons which differ by their characteristic size and the balance in the energies at the origin of their stabilisation. However, these two spin textures have the same topology and a continuous transformation between them is allowed. In the present work, we derive an analytical model to explore the skyrmion-bubble transition. We evidence a region in the parameter space where both topological soliton solutions coexist and close to which transformations between skyrmion and bubbles are observed as a function of the magnetic field. Above a critical point, at which the energy barrier separating both solutions vanishes, only one topological soliton solution remains, which size can be continuously tuned from micrometer to nanometer with applied magnetic field.

International audience; Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric field gating, an easily integrable and potentially energetically efficient solution. We present a detailed stability diagram of the skyrmion bubbles in a Pt/Co/oxide trilayer and show that their stability can be controlled via an applied electric field. An analytical bubble model, with the Dzyaloshinskii-Moriya interaction imbedded in the domain wall energy, account for the observed electrical skyrmion switching effect. This allows us to unveil the origin of the electrical control of skyrmions stability and to show that both magnetic dipolar interaction and the Dzyaloshinskii-Moriya interaction play an important role in the skyrmion bubble stabilization. Magnetic skyrmions are swirling spin textures with nanoscale dimensions and a non-trivial topology. They were studied theoretically more than two decades ago and observed at low temperature in the form of hexagonal lattices in non-centrosymmetric crystals and magnetic multilayers. Recently several groups have reported the observation of magnetic skyrmions at room temperature (RT) in conventional transition-metal-based magnetic multilayers. In some systems, the skyrmions present relatively large dimensions (~1 μm) and are called 'skyrmion bubbles'. While classical bubbles are

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers. (C) 2015 AIP Publishing LLC.

Anisotropies in the response of ferromagnetic electrodes attached to a gold nanoparticle lead to Coulomb blockade and spin-valve-like magnetoresistance phenomena. Such behaviour could allow the development of magnetically gated single-electron transistors composed of just two terminals.

A method to estimate heats of formation of ionic molecular crystals prior to their actual synthesis is put forward. It relies on systematic searches for stable polymorphs through ion packing, explicit evaluations of the cohesive energies using these computer-generated crystal structures, and separate density-functional estimations of the gas-phase contributions. Preliminary results indicate that suitable trial structures are readily found even with a moderate sampling of the search space. Moreover, the density functional procedure employed turns out to be satisfactory for charged species. On the other hand, using observed crystal geometries, a point-charge model yields acceptable values for the cohesive energies. Finally, the need for a transferable force field to relax the trial structures appears to be the most critical point.

International audience; We present a magneto-optical Kerr effect study of the magnetization reversal in a FePt/Al2O3 structure under electric (E) fields generated in a liquid electrolyte environment. The FePt film was partially covered with a thick Al2O3 layer that allowed for the study of a pinned domain wall between two regions of different coercive field. Depinning of the trapped domain wall into the region of higher coercivity was achieved by applying positive gate voltages during the magnetic field ramp and prevented in the presence of negative gate voltages. Moving from positive to negative gate voltages produced, in addition, an increase (decrease) in the number (size) of reverse domains in the high anisotropy region. This effect has been associated to an E-field induced decrease of the saturation field. Using a liquid gate to assist domain wall depinning as presented here can be used for the control of multiple pinning structures in parallel.

International audience; The electric (E)-field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material: controlling domain wall nucleation and stopping DW propagation at the edge of the electrode.

International audience; We have investigated the contribution of stochastic thermally activated processes to the electric-field effects on coercivity in FePt. Coercive field distributions were measured under different gate voltages in solid-state field-effect structures. For low voltages a shift in the coercive field distribution can be observed, however, it is not larger than the width of the distribution. Higher oltages are needed to obtain the splitting from the negative (zero) voltage distribution allowing for the unambiguous characterization of the electric-field effect. A virtual unipolarity in the electric-field effect has been identified as a feature introduced by the dielectric layer that disappears upon annealing.

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the electronic structure in a few atomic layers adjacent to the interface allows for ferroelectric control of coercivity and magnetic domain dynamics. These effects have been monitored and quantified using magneto-optical Kerr effect. In particular, the regimes, where the ferroelectric domains enhance/inhibit the magnetic domain nucleation or increase/reduce domain wall velocity, have been explored. Thus, non-destructive and reversible ferroelectric domain writing provides a tool to define the magnetic domain paths, create nucleation sites, or control domain movement. (C) 2013 AIP Publishing LLC.

We present the modulation of anisotropy field, coercivity, and domain wall (DW) velocity in CoFeB/MgO thin films with perpendicular anisotropy by applying voltages across an ionic liquid gate. Domain wall velocities in the creep regime can be modulated by a factor of 4.2, and the anisotropy field of the device can be modulated by 40 mT when going from +0.8 V to −0.8 V. The applied E-fields are seen to significantly influence DWs' pinning, depinning, and nucleation processes. In addition, we report on the evolution of the magnetic properties of the liquid/solid device as a function of time going from the pristine CoFeB/MgO film through device fabrication and operation up to one month. These results show that the solid/liquid device structure based on CoFeB/MgO thin films can be an efficient way to control magnetic properties with voltages below 1 V.

International audience; The coercive field statistics in FePt nanostructures reveals the existence of multiple switching probability sub-distributions that can be asymmetric with respect to the field orientation. Each sub-distribution is correlated with an individual magnetization reversal path whose selection cannot happen at the magnetization reversal in negative (positive) field but rather at the moment of applying the initial positive (negative) magnetic field. This serves to determine the reference magnetic state from which reversal in negative (positive) field will develop. The disappearance of the asymmetric sub-distributions upon increasing the initial magnetic field μ0Hmax supports this model. However, the sub-distributions remaining at high μ0Hmax are not necessarily those characterized by the highest coercive field. This is attributed to the fact that the initial magnetization state hierarchy and the coercive field hierarchy are essentially decorrelated.

Until now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation, particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals. A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning the fabrication and performance of magneto-electric field-effect devices.

We investigate the magnetotransport characteristics of nanospintronics single-electron devices. The devices consist of single nonmagnetic nano-objects (nanometer-size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or the AMC effect dominates from the Coulomb blockade $I$-$V$ curves of the spintronics device.

We report on theoretical and experimental work involving a particular molecular switch, an [FeII(L)2]2+ complex, that utilizes a spin transition (“crossover”). The hallmark of this transition is a change of the spin of the metal ion, SFe=0 to SFe=2, at fixed oxidation state of the Fe ion. Combining density functional theory and first principles calculations, we demonstrate that within a single molecule this transition can be triggered by charging the ligands. In this process the total spin of the molecule, combining metal ion and ligands, crosses over from S=0 to S=1. Three-terminal transport through a single molecule shows indications of this transition induced by electric gating. Such an electric field control of the spin transition allows for a local, fast, and direct manipulation of molecular spins, an important prerequisite for molecular spintronics.

We experimentally study spin injection and spin dependent transport in a single non magnetic nanoparticle contacted by ferromagnetic leads through alumina barriers. Theoretical studies on the interplay of discrete charging and spin polarised current in such a structure predict spin accumulation effects in the nanoparticle, leading to novel effects such as tunnel magnetoresistance oscillations versus bias voltage. We report the first experimental observation of spin accumulation in Au and Cu single nanoparticles of few nanometers in diameter. Fabrication is carried out using a conductive tip AFM with real time monitoring of the conductance during the nanoindentation process. With this technique, we can contact a single isolated particle of a few nanometer in size. Because the capacitance of the nanoparticle is very small, the energy needed to add an electron on it becomes larger than the thermal energy leading to discrete voltage jumps of e/C in the I-V characteristics called Coulomb blockade "staircases". The 4.2K I-V curves, showing typical Coulomb blockade transport through a unique nanoparticle, are in excellent agreement with simulations.

We report on the high yield connection of single nano-objects as small as a few nanometres in diameter to separately elaborated metallic electrodes, using a 'table-top' nanotechnology. Single-electron transport measurements validate that transport occurs through a single nano-object. The vertical geometry of the device natively allows an independent choice of materials for each electrode and the nano-object. In addition ferromagnetic materials can be used without encountering oxidation problems. The possibility of elaborating such hybrid nanodevices opens new routes for the democratization of spintronic studies in low dimensions.

As spintronics goes nano, new phenomena are predicted resulting from the interplay between spin dependent transport and single electron physics. The long term goal of manipulating spins one by one would open a promising path to quantum computing. Towards this end, there is an ever-growing effort to connect spin tanks (i.e. ferromagnetic leads) to smaller and smaller objects in order to study spintronics in reduced dimensions. As the dimensions are reduced, spin dependent transport is predicted to interplay with quantum and/or single electron charging effects. We review experiments and theories on the interplay between Coulomb blockade and spin properties (namely magneto-Coulomb effects) in structures where a single nano-object is connected to ferromagnetic leads. We then discuss briefly future directions in the emerging field of nanospintronics towards quantum dots, carbon nanotubes and single molecule magnets.

We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a non magnetic cluster.

In the context of studying magnetic and spintronics phenomena occurring at the nanoscale, we investigated several aspects of Pt/Co/AlOx asymmetric structures. One of the objectives of this thesis was the control of the oxidation and the tailoring of the magnetic properties of these multilayers. We combined structural (X-Ray Reflectivity), transport (Anomalous Hall Effect) and magnetic measurements (VSM-SQUID), to study the interplay of magnetic and interfacial effects. One objective was to analyze the role that few monolayers (MLs) of CoO (which can form when overoxidizing the Al layer), could have on the properties of the stack. We used a wedge deposition techniques to control the oxidation on a subnanometer scale. We established that few MLs of CoO largely affect the total anisotropy of the stack. To further investigate the impact of the CoO, we engineered ultrathin Co(0.6nm)/CoO(0.6nm) bilayers. We performed field cooled measurements on this system and we found a large exchange bias anisotropy. These results indicate that the CoO keeps a large anisotropy even in the ML regime, help to rule out some of the models proposed to explain the exchange bias effect and imply that the usually neglected CoO presence must be considered in the energy balance of the system. We build perpendicular Tunneling Anisotropic MagnetoResistance (TAMR) devices based on the Pt/Co/AlOx structure. The TAMR is a relatively new spintronics effect in which the rotation of the magnetization in a single magnetic electrode (combined with the Spin-Orbit Coupling) can cause a change of the tunnel probability, which manifests as a magnetoresistance effect. We demonstrated that a careful control of the interface oxidation is crucial for the TAMR effect. The large induced magnetic anisotropy allowed us to achieve enhanced TAMR values compared to similar Pt/Co/AlOx structures.; Dans le cadre de l’étude des phénomènes magnétiques et de la spintronique qui sont présents aux échelles nanoscopiques nous avons étudié différents aspects des structures asymétriques de Pt/Co/AlOx. L’un des objectifs de cette thèse est le contrôle de l’oxydation et des propriétés magnétiques de ces multicouches. Nous avons combiné les mesures de structures (réflexion de Rayon-X), transports (Effet Hall anormal), et magnétiques (VSM-SQUID) afin de déterminer les rôles des effets magnétiques et d’interfaces. Un objectif était d’analyser le rôle de quelques monocouches (MCs) de CoO (qui peut se former lors de la sur oxydation de l’Al) sur les propriétés de la multicouche. Nous avons utilisé une technique de déposition avec un gradient d’épaisseur pour contrôler l’oxydation à l’échelle nanométrique. Nous avons établis que quelques monocouches (MCs) de CoO a un impact sur l’anisotropie de a multicouche. Pour approfondir l’effet de la couche de CoO, nous avons construit des bicouches ultrafines de Co(0.6nm)/CoO(0.6nm). Nous avons effectué des mesures refroidi sur champ sur ce système et trouvé un fort effet de couplage d'échange. Ces résultats indiquent que la couche CoO garde une forte anisotropie même en dans la limite des monocouches et permet de réfuter certains modèles sur l’effet d’échange bias et indique que les couches, couramment négligé, de CoO doivent être prises en considération dans le bilan énergétiques du système. Nous avons construits un appareil de mesure perpendiculaire de la magnétorésistance tunnel anisotrope (TAMR) à partir de la structure Pt/Co/AlOx. La TAMR est un effet de spintronique relativement récent dans lequel la rotation d’aimantation dans une électrode magnétique (combiné avec un couplage spin-orbite) peut entrainer un changement de la probabilité de l’effet tunnel, ce qui se manifeste comme un effet de magnétorésistance. Nous avons démontré qu’un contrôle précis de l’état d’oxydation est essentiel pour l’effet TAMR. La forte anisotropie magnétique induite nous permet d’atteindre des valeurs de TAMR plus grande comparée à celle des structures Pt/Co/AlOx.

In the context of studying magnetic and spintronics phenomena occurring at the nanoscale, we investigated several aspects of Pt/Co/AlOx asymmetric structures. One of the objectives of this thesis was the control of the oxidation and the tailoring of the magnetic properties of these multilayers. We combined structural (X-Ray Reflectivity), transport (Anomalous Hall Effect) and magnetic measurements (VSM-SQUID), to study the interplay of magnetic and interfacial effects. One objective was to analyze the role that few monolayers (MLs) of CoO (which can form when overoxidizing the Al layer), could have on the properties of the stack. We used a wedge deposition techniques to control the oxidation on a subnanometer scale. We established that few MLs of CoO largely affect the total anisotropy of the stack. To further investigate the impact of the CoO, we engineered ultrathin Co(0.6nm)/CoO(0.6nm) bilayers. We performed field cooled measurements on this system and we found a large exchange bias anisotropy. These results indicate that the CoO keeps a large anisotropy even in the ML regime, help to rule out some of the models proposed to explain the exchange bias effect and imply that the usually neglected CoO presence must be considered in the energy balance of the system. We build perpendicular Tunneling Anisotropic MagnetoResistance (TAMR) devices based on the Pt/Co/AlOx structure. The TAMR is a relatively new spintronics effect in which the rotation of the magnetization in a single magnetic electrode (combined with the Spin-Orbit Coupling) can cause a change of the tunnel probability, which manifests as a magnetoresistance effect. We demonstrated that a careful control of the interface oxidation is crucial for the TAMR effect. The large induced magnetic anisotropy allowed us to achieve enhanced TAMR values compared to similar Pt/Co/AlOx structures., Dans le cadre de l’étude des phénomènes magnétiques et de la spintronique qui sont présents aux échelles nanoscopiques nous avons étudié différents aspects des structures asymétriques de Pt/Co/AlOx. L’un des objectifs de cette thèse est le contrôle de l’oxydation et des propriétés magnétiques de ces multicouches. Nous avons combiné les mesures de structures (réflexion de Rayon-X), transports (Effet Hall anormal), et magnétiques (VSM-SQUID) afin de déterminer les rôles des effets magnétiques et d’interfaces. Un objectif était d’analyser le rôle de quelques monocouches (MCs) de CoO (qui peut se former lors de la sur oxydation de l’Al) sur les propriétés de la multicouche. Nous avons utilisé une technique de déposition avec un gradient d’épaisseur pour contrôler l’oxydation à l’échelle nanométrique. Nous avons établis que quelques monocouches (MCs) de CoO a un impact sur l’anisotropie de a multicouche. Pour approfondir l’effet de la couche de CoO, nous avons construit des bicouches ultrafines de Co(0.6nm)/CoO(0.6nm). Nous avons effectué des mesures refroidi sur champ sur ce système et trouvé un fort effet de couplage d'échange. Ces résultats indiquent que la couche CoO garde une forte anisotropie même en dans la limite des monocouches et permet de réfuter certains modèles sur l’effet d’échange bias et indique que les couches, couramment négligé, de CoO doivent être prises en considération dans le bilan énergétiques du système. Nous avons construits un appareil de mesure perpendiculaire de la magnétorésistance tunnel anisotrope (TAMR) à partir de la structure Pt/Co/AlOx. La TAMR est un effet de spintronique relativement récent dans lequel la rotation d’aimantation dans une électrode magnétique (combiné avec un couplage spin-orbite) peut entrainer un changement de la probabilité de l’effet tunnel, ce qui se manifeste comme un effet de magnétorésistance. Nous avons démontré qu’un contrôle précis de l’état d’oxydation est essentiel pour l’effet TAMR. La forte anisotropie magnétique induite nous permet d’atteindre des valeurs de TAMR plus grande comparée à celle des structures Pt/Co/AlOx.