Search

Heterogeneous Integration (HI) may enable optoelectronic transceivers for short-range and long-range radio frequency (RF) photonic interconnect using wavelength-division multiplexing (WDM) to aggregate RF signals, provide galvanic isolation, and reduce crosstalk and interference. Integration of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with InGaAsP compound semiconductor photonics provides the potential for high-performance microsystems that combine complex electronic functions with optoelectronic capabilities from rich bandgap engineering opportunities, and intimate integration allows short interconnects for lower power and latency. The dominant pure-play foundry model plus the differences in materials and processes between these technologies dictate separate fabrication of the devices followed by integration of individual die, presenting unique challenges in die preparation, metallization, and bumping, especially as interconnect densities increase. In this paper, we will describe progress towards realizing an S-band WDM RF photonic link combining 180 nm silicon CMOS electronics with InGaAsP integrated optoelectronics, using HI processes and approaches that scale into microwave and millimeter-wave frequencies.

In this paper, we test Si vertical-junction disk modulators and waveguide-integrated Ge p-i-n photodiodes (PDs) to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high-energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1-Mrad(Si) exposure. As the bandwidth of the Si disk modulator decreases by 6.5% after 1-Mrad(Si) dose, the bandwidth of the Ge p-i-n PD appears to be unaffected. The increased sensitivity of the Si disk modulator bandwidth to gamma radiation is hypothesized to be caused by a decrease in the carrier concentration of the junction with a resulting increase in the p-n junction RC time constant. The Ge p-i-n PD is relatively insensitive to the surface effects, because the absorption happens away from the SiO2–Ge interface and the gamma radiation has a minimal effect on carrier mobility.

We present narrowband RF-photonic filters in an integrated silicon platform. Using Brillouin interactions, the filters yield narrowband (∼MHZ) filter bandwidths with high signal rejection, and demonstrate tunability over a wide (∼GHz) frequency range.

Passive silicon photonic waveguides are exposed to gamma radiation to understand how the performance of silicon photonic integrated circuits is affected in harsh environments such as space or high energy physics experiments. The propagation loss and group index of the mode guided by these waveguides is characterized by implementing a phase sensitive swept-wavelength interferometric method. We find that the propagation loss associated with each waveguide geometry explored in this study slightly increases at absorbed doses of up to 100 krad (Si). The measured change in group index associated with the same waveguide geometries is negligibly changed after exposure. Additionally, we show that the post-exposure degradation of these waveguides can be improved through heat treatment.

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser's frequency and phase can be controlled by an injected signal. Due to its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection locking dynamics remain relatively untapped--despite significant potential for technological and scientific impact. Here, we demonstrate injection locking in a silicon photonic Brillouin laser for the first time. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and back-scatter immunity in an all-silicon system. This device physics opens the door to new strategies for phase noise reduction, low-noise amplification, and back-scatter immunity in silicon photonics., Comment: 15 pages

Optical polarizers encompass a class of anisotropic materials that pass-through discrete orientations of light and are found in wide-ranging technologies, from windows and glasses to cameras, digital displays and photonic devices. The wire-grids, ordered surfaces, and aligned nanomaterials used to make polarized films cannot be easily reconfigured once aligned, limiting their use to stationary cross-polarizers in, for example, liquid crystal displays. Here we describe a supramolecular material set and patterning approach where the polarization angle in stand-alone films can be precisely defined at the single pixel level and reconfigured following initial alignment. This capability enables new routes for non-binary information storage, retrieval, and intrinsic encryption, and it suggests future technologies such as photonic chips that can be reconfigured using non-contact patterning.

We report on thermally tunable modulators, with efficiencies up to 2.16 nm/mW. Efficient performance was accomplished through integrated heater design and Si substrate removal, where the heavily N+ doped Si heater element is integrated into the body of the microdisk. For comparison, modulators with an external heater design were also tested with small diameter Si substrate removed. The external heavily doped N+Si heater bars were fabricated outside the diameter of the microdisk. Efficiency for external heater design was 0.68 nm/mW with substrate removed. Both types of thermal modulators were experimentally tested and simulated for a complete understanding of the Si substrate's influence on heat dissipation with both types benefiting significantly from substrate removal. Agreement between simulation and experimental results was greater than 80 $\%$ in all instances.

We demonstrate injection-locked operation of a silicon-based Brillouin laser for the first time. The unique spatio-temporal inter-modal Brillouin dynamics enable nonreciprocal control and low-phase-noise operation within a monolithically integrated system.

We present a 30 GHz heterogeneously integrated silicon photonic/lithium niobate Mach-Zehnder modulator simultaneously utilizing the strong Pockels effect in LiNbO 3

Volumetric imaging of focusing waveguide grating coupler emission with high spatial resolution in the visible ( ${{\lambda \,= \,637.3\,\text{nm}}}$ ) is demonstrated using a scanning near-field optical microscope with long z -axis travel range. Stacks of 2-D images recorded at fixed distance from the device are compiled to yield 3-D visualization of the light emission pattern and enable extraction of parameters, such as spot size, angle of emission, and focal height. Measurements of such parameters are not prevalent in the literature yet are necessary for efficacious design and integration. It is observed that finite-difference time-domain simulations based on fabrication layout files do not perfectly predict in-hand device behavior, underscoring the merit of experimental validation, particularly for critical application.

We are exploring heterogeneous integration (HI) for realizing transceivers that enable short-range and long-range RF photonic interconnect using wavelength-division multiplexing to aggregate RF signals, provide galvanic isolation, and reduce crosstalk and interference. The intimate integration of these functions will allow for higher signal density in congested volumes as well as reduced size weight and power (SWaP). HI of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with compound semiconductor photonics enables high-performance microsystems that combine complex electronic functions with optoelectronic capabilities enabled by rich bandgap engineering opportunities. CMOS is an ideal technology for controlling and interfacing with optoelectronic circuits because of its maturity, accessibility through multiple foundries, and capability for a broad range of mixed-signal and RF functions. However, accessible state-of-the-art CMOS offerings do not include integrated photonic capability, and post-process monolithic integration of photonics is cost-prohibitive for all but the highest volume applications. For photonics, InP-based compound semiconductor technologies offer higher speeds than silicon photonic technologies plus the capability to exploit bandgap engineering to realize the monolithic integration of many functions including lasers, modulators, detectors, couplers, and filters. Unfortunately, compound semiconductor electronics offer poorer integration density and digital logic capabilities compared to CMOS, and monolithic integration of electronic and photonic functions in compound semiconductor technology is very complicated and has only been demonstrated in limited research environments. The differences in materials and processes between CMOS electronics and InP optoelectronics necessitates separate fabrication of the two technologies, followed by HI to achieve a microsystem that takes advantages of the capabilities of these two technologies. In this work, we are comparing and evaluating approaches for integrating 180 nm CMOS RF interface circuits with planar InP photonic integrated circuits and surface-normal GaAs-based optoelectronics. To avoid the critical sub-micron alignment tolerances of optical interfaces, optical signals are constrained to the photonic chip and the interface between the two technologies is limited to electrical signals. Prototype RF electrical-optical transmitters and optical-electrical receivers are being fabricated using both wire-bond and flip-chip integration approaches, and the performance and SWaP benefits provided by HI are being evaluated. In this HI application, the dissimilar materials and small CMOS die present challenges beyond that of either wafer-to-wafer bonding or standard chip-scale solder integration. To address a capability gap for high-density integration of CMOS die with Al pads obtained through multi-project-wafer runs, we are developing methods for adding appropriate under-bump-metallization and process bumps to the Al pads on single die. Flip-chip integration approaches being explored include solder ball scaling down to 75 µm pitch, as well as Cu pillars and Au microbumps with targeted pitches as low as 25 microns. HI offers electrically short interconnects that do not require controlled impedance transmission lines and resistive load termination for high-speed data transfer. Controlled impedance routing with load termination is generally used for high-speed chip-to-chip interconnect because the pads and packaging add parasitic impedance, and the routing length is both uncontrolled by the chip designer and significant relative to an electrical wavelength. Using HI to control and minimize the inter-chip interface allows for electrically short interconnect with a significant power reduction for a given optical driver requirement. At frequencies well below cutoff with 1 Vpeak drive, modeling predicts that an unterminated link has negligible power consumption and 0 dB voltage loss, while a terminated link has 5 mW power consumption and 6 dB loss. For an unterminated link, simulations indicate that using a 25 micron-square bump instead of a 1 mm-long wire bond doubles the low-power bandwidth from 9 GHz to 18 GHz. This presentation will cover the architecture and technical challenges of this HI activity, describe the constituent InP and CMOS technologies, provide updated results from wirebonded and flip-chipped test prototypes, and discuss future opportunities for scaling and improved performance. Supported by the Laboratory Directed Research and Development program at Sandia National Laboratories, a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. SAND2020-5502A Figure 1

We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.

We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.

We present a new method of accurately and quickly characterizing waveguide loss using an arrayed waveguide grating (AWG) measured in a swept wavelength interferometer (SWI). By taking the Fourier transform of the interference pattern in the optical frequency domain we are able to accurately extract the waveguide propagation loss which is independent of insertion loss due to on and off chip coupling. This method is applied to a 400 nm × 230 nm silicon waveguide which we find to have a loss of 2.13±0.05 dB/cm. We will also present additional results for waveguide loss as a function of waveguide width.

We demonstrate the ultrahigh extinction operation of a silicon photonic (SiP) amplitude modulator (AM) employing a cascaded Mach-Zehnder interferometer. By carrying out optimization sweeps without significantly degrading the extinction, the SiP AM is robust to environment changes and maintained >52 dB extinction for >6 hrs.

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

A foundry-compatible hybrid silicon-lithium niobate electro-optic modulator with an optical bandwidth greater than 6 GHz is presented. Wafer-scale photolithography processing is used to fabricate silicon features before bonding to a 600 nm lithium niobate film.

We experimentally demonstrate ultrahigh extinction ratio (>65 dB) amplitude modulators (AMs) that can be electrically tuned to operate across a broad spectral range of 160 nm from 1480 – 1640 nm and 95 nm from 1280 – 1375 nm. Our on-chip AMs employ one extra coupler compared with conventional Mach-Zehnder interferometers (MZI), thus form a cascaded MZI (CMZI) structure. Either directional or adiabatic couplers are used to compose the CMZI AMs and experimental comparisons are made between these two different structures. We investigate the performance of CMZI AMs under extreme conditions such as using 95:5 split ratio couplers and unbalanced waveguide losses. Electro-optic phase shifters are also integrated in the CMZI AMs for high-speed operation. Finally, we investigate the output optical phase when the amplitude is modulated, which provides us valuable information when both amplitude and phase are to be controlled. Our demonstration not only paves the road to applications such as quantum information processing that requires high extinction ratio AMs but also significantly alleviates the tight fabrication tolerance needed for large-scale integrated photonics.

We present our experimental results of ultra efficient (up to 2.16 nm/mW) thermally tunable modulators with n-type heaters and the Si substrate removed. To our knowledge, this is the most efficient thermally tunable modulator demonstrated at 1550nm to date. We include results of externally heated modulators with commensurate performance enhancements through substrate removal.

We present a quantitative analysis of the correlation of resonant wavelength variation with process variables, and find that 50% of the resonant wavelength variation for microrings is due to systematic process conditions. We also discuss the improvement of device uniformity by mitigating these systematic variations.

Electronic interconnects are reaching their limit in terms of speed, dimensions and permissible power consumption. This has been a major concern in data centers and large scale computing platforms, creating limits to their scalability especially with respect to power consumption. Silicon photonic-electronic integration is viewed as a viable alternative that enables reliability, high efficiency, low cost and small footprint. In particular, silicon with its high refractive index, has enabled the integration a many individual optical elements (ring resonators) in small areas. Though silicon has a high thermo-optic coefficient (1.8×10^-4/°C) compared to silica, small thermal fluctuations can affect the optical performance especially for WDM applications. Therefore, a passive athermal solution for silicon photonic devices is required in order to reduce thermal sensitivity and power consumption. We have achieved this goal by replacing the silica top cladding with negative thermo-optic coefficient (TOC) materials. While polymers and titanium dioxide(titania) have a negative TOC, polymers can’t handle high temperature processing and titania needs very tight thickness control and expensive deposition under vacuum. In this work we propose to use a sol-gel inorganic-organic hybrid material that has the benefits of both worlds. We were able to find optimum curing conditions to athermalize ring resonators by studying various sol-gel curing times and curing temperatures. Our athermal rings operate in a wide temperature range from 5C – 100C with thermal shifts below 1pm/C and low loss. Furthermore, we demonstrate that our athermal approach does not deleteriously effect critical device parameters, such as insertion loss and resonator Q factors.

Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.

We derive an adjoint shape optimization algorithm with a compound figure of merit and demonstrate its use with both gradient descent and Levenberg-Marquart updates for the case of SiO2-buried SOI coplanar waveguide crossings. We show that a smoothing parameter, basis function width, can be used to eliminate small feature sizes with a small cost to device performance. The Levenberg-Marquardt update produces devices with larger bandwidth. A waveguide crossing with simulated performance values of > 60 dB cross power extinction ratio and > −0.08 dB through power over the 1500-1600 nm band is presented. A fabricated device is measured to have a maximum of −0.06 dB through power and a 50 dB cross power extinction ratio.

We design, fabricate and demonstrate the operation of a compact, 1 GHz resolution silicon arrayed waveguide grating. Active phase correction allows for low channel cross-talk, enabling the demonstration of spectral shaping and RF signal analysis.

We demonstrate a silicon photonic transceiver circuit to implement polarization encoding/decoding for DV-QKD. The circuit is capable of encoding BB84 states with >30 dB PER and decoding with >20 dB ER.

We experimentally demonstrate amplitude modulators (AMs) with >65 dB extinction across over a 160 nm spectral range. The output optical phase response is also characterized when the amplitude is modulated.

A two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. We derive and discuss a simple thermal-resistance model in explanation of these effects.

Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a “pinched” p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%–90% transition time, and with efficiency of 3.2 μW/GHz.

We demonstrate compact silicon photonic arrayed waveguide gratings with channel spacing down to 1 GHz using active phase correction. The relative phase of each path within the device is directly measured using an interferometer, and two methods of phase optimization are implemented and compared.

Sandia National Laboratories has developed a toolkit of RF photonic devices. These devices have been used in the development of multielement RF photonic circuits and in support of MPW runs. In this talk I will discuss Sandia's silicon photonic process and RF photonic device performance.

We present experimental results for a Ge on Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Our linear mode APD has a gain-bandwidth product in excess of 200 GHz. Furthermore, we demonstrate error free operation (BER< 10−12) with our waveguide coupled linear mode APD using pseudo-random bit sequence (PBRS) data at 10 Gb/s.

We demonstrate an on-chip polarization beam splitter (PBS), which is adiabatic for the transverse magnetic mode, and diabatic for the transverse electric mode. The PBS has a simple structure that is tolerant to manufacturing variations and exhibits high polarization extinction ratios over a wide bandwidth.

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

An RF-photonic filter and down-converter system based on a compact and fully tunable silicon optical filter has been demonstrated and analyzed. Its frequency down-conversion was implemented using optical heterodyne detection with an injection locked laser. This system filters a 1.25 GHz-wide signal with > 20 dB filter rejection and a very broad 20 GHz center tuning range. The frequency down-conversion process is operated in a low-IF mode to avoid laser low frequency noises. Measured system Spurious-Free Dynamic Range (SFDR) of 94.3 dB*Hz2/3 has been limited by the optical losses from I/O coupling and measurement setup. We examined experimentally that 105.3 dB*Hz2/3 SFDR is achievable if the encountered optical loss were reduced to the filter's intrinsic loss. Based on the excellent agreements between measured and simulated results, we explore the critical improvements of the silicon photonic devices needed for the system to achieve 118 dB*Hz2/3 SFDR and briefly review the status of the component technologies.

Measurement uncertainties in the techniques used to characterize loss in photonic waveguides becomes a significant issue as waveguide loss is reduced through improved fabrication technology. Typical loss measurement techniques involve environmentally unknown parameters such as facet reflectivity or varying coupling efficiencies, which directly contribute to the uncertainty of the measurement. We present a loss measurement technique, which takes advantage of the differential loss between multiple paths in an arrayed waveguide structure, in which we are able to gather statistics on propagation loss from several waveguides in a single measurement. This arrayed waveguide structure is characterized using a swept-wavelength interferometer, enabling the analysis of the arrayed waveguide transmission as a function of group delay between waveguides. Loss extraction is only dependent on the differential path length between arrayed waveguides and is therefore extracted independently from on and off-chip coupling efficiencies, which proves to be an accurate and reliable method of loss characterization. This method is applied to characterize the loss of the silicon photonic platform at Sandia Labs with an uncertainty of less than 0.06 dB/cm.

We present a fully tunable multistage narrowband optical pole-zero notch filter that is fabricated in a silicon complementary metal oxide semiconductor (CMOS) foundry. The filter allows for the reconfigurable and independent tuning of the center frequency, null depth, and bandwidth for one or more notches simultaneously. It is constructed using a Mach-Zehnder interferometer (MZI) with cascaded tunable all-pass filter (APF) ring resonators in its arms. Measured filter nulling response exhibits ultranarrow notch 3 dB BW of 0.6350 GHz, and nulling depth of 33 dB. This filter is compact and integrated in an area of 1.75 mm2. Using this device, a novel method to cancel undesired bands of 3 dB bandwidth of < 910 MHz in microwave-photonic systems is demonstrated. The ultranarrow filter response properties have been realized based on our developed low-propagation loss silicon channel waveguide and tunable ring-resonator designs. Experimentally, they yielded a loss of 0.25 dB/cm and 0.18 dB/round trip, respectively.

A waveguide–integrated GeSi electro-absorption modulator on silicon with an ultra-low energy consumption of 50 fJ–1bit is presented. Operating in the spectral range of 1539—1553 nm, the CMOS–compatible device has an active area of 30 µm2 and is anticipated to be useful for future communication systems based on large–scale electronic–photonic integration on silicon.

We demonstrate the operation of silicon micro-disk modulators at temperatures as low as 3.8K. We characterize the steady-state and high-frequency performance and look at the impact of doping concentration.

We demonstrate a compact fully tunable narrowband fourth-order pole-zero optical filter that is fabricated in a silicon complementary-metal-oxide-semiconductor foundry. The filter is implemented using silicon on oxide channel waveguides and consists of a Mach-Zehnder interferometer with two ring resonator all-pass filters (APFs) on each arm. The filter architecture is based on the sum and difference of the APFs responses. The ring resonators introduce a nonlinear phase response in each arm that allows carving narrow frequency bands out of a broad spectrum. In this paper, we demonstrate a 3-dB filter bandwidth of 1.0 GHz with a stopband rejection of better than 25 dB. The filter free spectral range is 16.5 GHz. Thermooptic phase shifters are used to tune the filter. As silicon has a large thermooptic coefficient compared to silica, the demonstrated filter requires a low tuning power of less than 300 mW. In addition, this filter is compact with dimensions 25 times smaller than the same filter would be if it were made using standard silica on silicon waveguides with a 0.8% step index contrast

We review Sandia's silicon photonics platform for national security applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III–V or purely electronics circuits. Unlike most silicon photonics foundries in the US and internationally, our silicon photonics is manufactured in a trusted environment at our Microsystems and Engineering Sciences Application (MESA) facility. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will describe a variety of silicon photonics devices and subsystems, including both monolithic and heterogeneous integration of silicon photonics with electronics, that can enable future complex functionality in aerospace systems, principally focusing on communications technology in optical interconnects and optical networking.

We demonstrate a novel grating coupler fabricated on a silicon-on-insulator (SOI) wafer operating at 1550 nm, based on an ultrathin 50-nm silicon geometry. The devices are fabricated in a CMOS-compatible process with a single etch step. A low insertion loss of ${-}{\rm 3.7}~{\rm dB}$ is achieved. We also calculate the backreflection loss to be ${-}{\rm 14}~{\rm dB}$ . The devices are likely to be useful in terms of light coupling between optical fibers and ultrathin silicon waveguides.

We develop a computationally efficient and robust algorithm to automatically extract the coefficients of doublet resonances and apply this technique to 418 resonances in ring resonator transmission data with a mean RMS deviation of 7.28 × 10−4.

Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/°C for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130°C for 10.5 hours. We also achieved thermal shifts below 1 pm/°C for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.