1. Single-electron transistors based on Al/AlO/sub x//Al and Nb/AlO/sub x//Nb tunnel junctions
- Author
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Ernst-Bernhard Kley, Andreas Hädicke, U. Hubner, H. Muhlig, Th. Wagner, K. Blüthner, L. Fritzsch, D. Schelle, H.-J. Fuchs, M. Gotz, and W. Krech
- Subjects
Josephson effect ,Materials science ,Fabrication ,Condensed matter physics ,Niobium ,chemistry.chemical_element ,Coulomb blockade ,Condensed Matter Physics ,Evaporation (deposition) ,Electronic, Optical and Magnetic Materials ,chemistry ,Electrode ,Quasiparticle ,Electrical and Electronic Engineering ,Electron-beam lithography - Abstract
As an alternative to the shadow evaporation method for the preparation of ultrasmall tunnel junctions we have established the so-called self-aligned in-line technique. It was applied to the fabrication of common Al/AlO/sub x//Al-type and, for the first time, Nb/AlO/sub x//Nb-based single-electron transistors. The characterization of the samples at temperatures in the range of a few hundred millikelvins reveals charging effects (Coulomb blockade and gate modulation) of the quasiparticle current.
- Published
- 1997
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