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Theoretical analysis rigorously treated excitonic confinement effects and it was seen that the exciton indexing energy is significantly enhanced in thin quantum boxes in the intermediate regime between 2D and 0D. The oscillator strength concentrates to the lowest excitonic transition even if the width is about 5 times as large as the Bohr radius. Even though lateral confinement is weak, it considerably enhances the electron-hole Coulomb interaction and changes excitonic optical features in the thin quantum box significantly.

Electron spin-spin interaction in an asymmetric coupled quantum well (CQW) was investigated through electron spin-precession measurements. Precession (Larmor) frequencies from electrons localized in two CQWs were measured by means of polarization- and time-resolved photoluminescence measurements under a high magnetic field. At a low excitation power density, the Larmor frequency of the CQW was same as that of a single quantum well. The Larmor frequency of electron spin in one well was shifted to that in the other well as the excitation power density was increased. These experimental results are quantitatively explained by an exchange interaction between electrons localized in the two wells. [ABSTRACT FROM AUTHOR]

Diameter dependence of the phase relaxation time T2 in semiconducting single-walled carbon nanotubes was measured using a two-beam time-resolved degenerate four-wave mixing method. The T2 value increases with increasing tube diameter. This experimental trend can be understood by the diameter dependence of exciton-phonon interaction. We also discuss the origin of diameter dependence of third-order nonlinearity connected with relaxation times. [ABSTRACT FROM AUTHOR]

The multiband effective mass theory and fluctuation-dissipation theorem is employed to analyze the statistical fluctuation of magnetization that takes place in the Mn-composition modulated [Cd.sub.1?x][Mn.sub.x]Te quantum wires. The temperature, as well as the magnetic field is shown to be the two main factors that are shown to affect the line width of the system.

Presents information on a study which analyzed the absorption and gain properties in aluminum gallium arsenic fractional-layer-superlattice quantum wires. Methodology; Results and discussion; Conclusion.

Presents a study which investigated optical absorption spectra of quasi-1D gallium arsenide (GaAs) quantum well wires (QWW) within the framework of multiband effective mass theory. Discussion on the semiconductor QWW structures; Calculation model and method for GaAs QWW; Numerical results and discussion.

Presents a study that investigated carrier-induced optical nonlinear effects in semiconductor quantum well wire structure. Method of the study; Results and discussion; Conclusion.

The n-type field effect transistor of dimetallofulerene La2@C80 thin film is demonstrated. Considering the nature of LUMO, the n-type field behavior of the device indicates an occurrence of carrier conduction through encapsulated La ions.