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Halide perovskites have attracted substantial interest for their potential as disruptive display and lighting technologies. However, perovskite light‐emitting diodes (PeLEDs) are still hindered by poor operational stability. A fundamental understanding of the degradation processes is lacking but will be key to mitigating these pathways. Here, a combination of in operando and ex situ measurements to monitor the performance degradation of (Cs0.06FA0.79MA0.15)Pb(I0.85Br0.15)3 PeLEDs over time is used. Through device, nanoscale cross‐sectional chemical mapping, and optical spectroscopy measurements, it is revealed that the degraded performance arises from an irreversible accumulation of bromide content at one interface, which leads to barriers to injection of charge carriers and thus increased nonradiative recombination. This ionic segregation is impeded by passivating the perovskite films with potassium halides, which immobilizes the excess halide species. The passivated PeLEDs show enhanced external quantum efficiency (EQE) from 0.5% to 4.5% and, importantly, show significantly enhanced stability, with minimal performance roll‐off even at high current densities (>200 mA cm−2). The decay half‐life for the devices under continuous operation at peak EQE increases from <1 to ≈15 h through passivation, and ≈200 h under pulsed operation. The results provide generalized insight into degradation pathways in PeLEDs and highlight routes to overcome these challenges. [ABSTRACT FROM AUTHOR]

There has been a meteoric rise in the commercial potential of lead halide perovskite optoelectronic devices since photovoltaic cells and light‐emitting diodes based on these materials were first demonstrated. One key challenge common to each of these optoelectronic devices is the need to suppress nonradiative recombination, a process that limits the maximum achievable efficiency in photovoltaic cells and light‐emitting diodes. In this Progress Report, recent studies that seek to minimize this loss pathway in perovskites through a photobrightening treatment, whereby the luminescence efficiency is enhanced through a light illumination passivation process are examined. The sensitivity of this effect to various experimental considerations is examined, including atmosphere, photon energy, photon dose, and also the role of perovskite composition and morphology; under certain conditions there can even be photodarkening effects. Consideration of these factors is critical to resolve seemingly conflicting literature reports. Proposed mechanisms are scrutinized, revealing that there is now some consensus but further work is needed to identify the specific defects being passivated and elucidate universal mechanisms. Finally, the prospects for these treatments to minimize halide migration and push the properties of polycrystalline films towards those of their single‐crystal counterparts are discussed. [ABSTRACT FROM AUTHOR]

Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution‐processed oxide transistors is limiting the lifetime and reliability of such circuits. Oxygen vacancies are the main defect degrading metal oxide transistor performance when ambient oxygen adsorbs onto metal oxide films. Here, an effective surface passivation treatment based on negative oxygen ion exposure combined with UV light is demonstrated, that is able to significantly reduce surface oxygen vacancy concentration and improve the field effect mobility to values up to 41 cm2 V−1 s−1 with high on–off current ratio of 108. The treatment also reduces the threshold voltage shift after 2 days in air from 5 to 0.07 V. The improved stability of the oxide transistors also improves the lifetime of hybrid complementary circuits and stable operation of complementary, analog amplifiers is confirmed for 60 days in air. The suggested approach is facile and can be widely applicable for flexible electronics using low‐temperature solution‐processed metal oxide semiconductors. [ABSTRACT FROM AUTHOR]

The article presents a condensed matter physics research report on efficient energy transport in an organic semiconductor mediated by transient exciton delocalization. Topics include re-evaluation of exciton dynamics and suggesting design rules to engineer efficient energy transport in OSC device architectures not based on restrictive bulk heterojunctions; and transient exciton delocalization, where energy exchange with vibrational modes allows extended states under equilibrium conditions.

Abstract: Lead tri‐iodide methylammonium (MAPbI3) perovskite polycrystalline materials show complex optoelectronic behavior, largely because their 3D semiconducting inorganic framework is strongly perturbed by the organic cations and ubiquitous structural or chemical inhomogeneities. Here, a newly developed time‐dependent density functional theory‐based theoretical formalism is taken advantage of. It treats electron–hole and electron–nuclei interactions on the same footing to assess the many‐body excited states of MAPbI3 perovskites in their pristine state and in the presence of point chemical defects. It is shown that lead and iodine vacancies yield deep trap states that can be healed by dynamic effects, namely rotation of the methylammonium cations in response to point charges, or through slight changes in chemical composition, namely by introducing a tiny amount of chlorine dopants in the defective MAPbI3. The theoretical results are supported by photoluminescence experiments on MAPbI3−mClm and pave the way toward the design of defect‐free perovskite materials with optoelectronic performance approaching the theoretical limits. [ABSTRACT FROM AUTHOR]