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34 results on '"Anbinderis, P"'

1. Microwave Bow-Tie Diodes on Bases of 2D Semiconductor Structures

Author

Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, and Algirdas Sužiedėlis

Subjects
selectively doped semiconductor structure, microwave bow-tie diode, semi-insulating substrate, polyimide substrate, Crystallography, QD901-999
Abstract

Planar microwave bow-tie diodes on bases of selectively doped semiconductor structures are successfully used in the detection and imaging of electromagnetic radiation in millimeter and submillimeter wavelength ranges. Although the signal formation mechanism in these high-frequency diodes is said to be based on charge-carrier heating in a semiconductor in a strong electric field, the nature of the electrical signal across the bow-tie diodes is not yet properly identified. In this research paper, we present a comprehensive study of a series of various planar bow-tie diodes, starting with a simple asymmetrically shaped submicrometer-thick n-GaAs layer and finishing with bow-tie diodes based on selectively doped GaAs/AlGaAs structures of different electrical conductivity. The planar bow-tie diodes were fabricated on two different types of high-resistivity substrates: bulky semi-insulating GaAs substrate and elastic dielectric polyimide film of micrometer thickness. The microwave diodes were investigated using DC and high-frequency probe stations, which allowed us to examine a sufficient number of diodes and collect a large amount of data to perform a statistical analysis of the electrical parameters of these diodes. The use of probe stations made it possible to analyze the properties of the bow-tie diodes and clarify the nature of the detected voltage in the dark and under white-light illumination. The investigation revealed that the properties of various bow-tie diodes are largely determined by the energy states residing in semiconductor bulk, surface, and interfaces. It is most likely that these energy states are responsible for the slow relaxation processes observed in the studied bow-tie diodes.

Published
2024
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2. Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures

Author

Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Karolis Požela, and Maksimas Anbinderis

Subjects
microwave detection, voltage sensitivity, bow-tie microwave diode, indium gallium arsenide, electromotive force of hot carriers, photo-gradient electromotive force, Chemical technology, TP1-1185
Abstract

The application of the unique properties of terahertz radiation is increasingly needed in sensors, especially in those operating at room temperature without an external bias voltage. Bow-tie microwave diodes on the base of InGaAs semiconductor structures meet these requirements. These diodes operate on the basis of free-carrier heating in microwave electric fields, which allows for the use of such sensors in millimeter- and submillimeter-wavelength ranges. However, there still exists some uncertainty concerning the origin of the voltage detected across these diodes. This work provides a more detailed analysis of the detection mechanisms in InAlAs/InGaAs selectively doped bow-tie-shaped semiconductor structures. The influence of the InAs inserts in the InGaAs layer is investigated under various illumination and temperature conditions. A study of the voltage–power characteristics, the voltage sensitivity dependence on frequency in the Ka range, temperature dependence of the detected voltage and its relaxation characteristics lead to the conclusion that a photo-gradient electromotive force arises in bow-tie diodes under simultaneous light illumination and microwave radiation.

Published
2023
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3. Magneto-dielectric characterization of TiO2-CoFe2O4 derived ceramic composites

Author

Pietro Galizia, Maksimas Anbinderis, Robertas Grigalaitis, Juras Banys, Carlo Baldisserri, Giovanni Maizza, and Carmen Galassi

Subjects
composites, ferrites, titanates, dielectric properties, magnetic properties, Clay industries. Ceramics. Glass, TP785-869
Abstract

Dielectric permittivity (ε′), magnetic permeability (µ′) and dielectric and magnetic loss (tan δε and tan δµ, respectively) of magneto-dielectric cobalt ferrite-titania (CFO-TO) ceramic composites are determined from 200 to 300 MHz. The four different combinations of phases - that can be produced in the sintered composite, according to the starting CFO/TO molar ratio - allow to tune the macroscopic permittivity and permeability. For the first time impedance, miniaturization and magneto-dielectric loss of the four classes of composites are calculated and discussed. The displayed miniaturization factors between 4.4 and 8.2 in the very-high frequency (VHF) range corroborate their potential application as magneto-dielectric substrate materials for antennas. Remarkably, the ceramic composites characterized by 2 vol.% and 3 vol.% of CFO and TO, respectively, dispersed in Fe2CoTi3O10 (FCTO) matrix display a magneto-dielectric loss lower than 0.07 and a miniaturization factor of 4.8.

Published
2018
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4. Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound

Author

Maksimas Anbinderis, Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Aldis Šilėnas, and Algirdas Sužiedėlis

Subjects
planar diode, microwave sensor, voltage responsivity, aluminum gallium arsenide, Chemical technology, TP1-1185
Abstract

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the Ka microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed.

Published
2021
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5. Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection

Author

Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, and Vladimir Umansky

Subjects
voltage sensitivity, bow-tie diode, thermoelectric electromotive force, hot carriers, selectively doped semiconductor structure, field-effect transistor, microwave, terahertz frequency, Chemical technology, TP1-1185
Abstract

We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel. The gate influences the sensing properties of the bow-tie diode depending on the nature of voltage detected across the ungated one as well as on the location of the gate in regard to the diode contacts. When the gate is located by the wide contact, the voltage sensitivity increases ten times as compared to the case of the ungated diode, and the detected voltage holds the same polarity of the thermoelectric electromotive force of hot electrons in an asymmetrically shaped n-n+ junction. Another remarkable effect of the gate placed by the wide contact is weak dependence of the detected voltage on frequency which makes such a microwave diode to be a proper candidate for the detection of electromagnetic radiation in the microwave and sub-terahertz frequency range. When the gate is situated beside the narrow contact, the two orders of sensitivity magnitude increase are valid in the microwaves but the voltage sensitivity is strongly frequency-dependent for higher frequencies.

Published
2020
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7. Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover

Author

Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Viktorija NARGELIENĖ, Aurimas ČERŠKUS, Andžej LUČUN, Tomas ANBINDERIS, Irina PAPSUJEVA, Aleksandras NARKŪNAS, Benas KUNDROTAS, and Roma RINKEVIČIENĖ

Subjects
semiconductor heterojunction, microwave diode, microwave detection, temperature dependence, Mining engineering. Metallurgy, TN1-997
Abstract

In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction diode placed in a microwave electric field. Different temperature dependences of the detected voltage for different types of microwave diodes fabricated on the base of GaAs/Al0.25Ga0.75As heterostructures have been measured. DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6319

Published
2014
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8. Development of cryogenic tracking detectors for very high luminosity experiments

Author

Härkönen, J., Anbinderis, P., Anbinderis, T., Bates, R., de Boer, W., Borchi, E., Bruzzi, M., Buttar, C., Chen, W., Cindro, V., Czellar, S., Eremin, V., Furgeri, A., Gaubas, E., Heijne, E., Ilyashenko, I., Kalesinskas, V., Krause, M., Li, Z., Luukka, P., Mandic, I., Menichelli, D., Mikuz, M., Militaru, O., Mueller, S., Niinikoski, T.O., O’Shea, V., Parkes, C., Piotrzkowski, K., Pirollo, S., Pusa, P., Räisänen, J., Rouby, X., Tuominen, E., Tuovinen, E., Vaitkus, J., Verbitskaya, E., Väyrynen, S., and Zavrtanik, M.

Published
2009
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9. Recent progress in CERN RD39: radiation hard cryogenic silicon detectors for applications in LHC experiments and their future upgrades

Author

Tuominen, E., Anbinderis, P., Anbinderis, T., Bates, R., de Boer, W., Borchi, E., Bruzzi, M., Buttar, C., Chen, W., Cindro, V., Czellar, S., Dierlamm, A., Eremin, V., Gaubas, E., Hairkonen, J., Heijne, E., Ilyashenko, I., Kalesinskas, V., Kortelainen, M.J., Lampen, T., Li, Z., Luukka, P., Mandic, I., Menichelli, D., Mikuz, M., Militaru, O., Mueller, S., Maienpaa, T., Niinikoski, T. O., O'Shea, V., Parkes, C., Piotrzkowski, K., Pirollo, S., Pusa, P., Raisanen, J., Tuovinen, E., Vaitkus, J., Verbitskaya, E., Vayrymen, S., and Zavrtanik, M.

Subjects
Silicon, Detectors, Business, Electronics, Electronics and electrical industries
Published
2009

10. Cryogenic Si detectors for ultra radiation hardness in SLHC environment

Author

Li, Zheng, Abreu, M., Anbinderis, P., Anbinderis, T., Ambrosio, N.D’., de Boer, W., Borchi, E., Borer, K., Bruzzi, M., Buontempo, S., Chen, W., Cindro, V., Dierlamm, A., Eremin, V., Gaubas, E., Gorbatenko, V., Grigoriev, E., Hauler, F., Heijne, E., Heising, S., Hempel, O., Herzog, R., Härkönen, J., Ilyashenko, I., Janos, S., Jungermann, L., Kalesinskas, V., Kapturauskas, J., Laiho, R., Luukka, P., Mandic, I., De Masi, Rita, Menichelli, D., Mikuz, M., Militaru, O., Niinikosky, T.O., Shea, V.O’., Pagano, S., Paul, S., Piotrzkowski, K., Pretzl, K., Rato Mendes, P., Rouby, X., Ruggiero, G., Smith, K., Sonderegger, P., Sousa, P., Tuominen, E., Tuovinen, E., Verbitskaya, E., Vaitkus, J., Wobst, E., and Zavrtanik, M.

Published
2007
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11. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

Author

Li, Zheng, Abreu, M., Anbinderis, P., Anbinderis, T., D’Ambrosio, N., de Boer, W., Borchi, E., Borer, K., Bruzzi, M., Buontempo, S., Chen, W., Cindro, V., Dierlamm, A., Eremin, V., Gaubas, E., Gorbatenko, V., Grigoriev, E., Hauler, F., Heijne, E., Heising, S., Hempel, O., Herzog, R., Härkönen, J., Ilyashenko, I., Janos, S., Jungermann, L., Kalesinskas, V., Kapturauskas, J., Laiho, R., Luukka, P., Mandic, I., De Masi, Rita, Menichelli, D., Mikuz, M., Militaru, O., Niinikosky, T.O., O’Shea, V., Pagano, S., Paul, S., Piotrzkowski, K., Pretzl, K., Mendes, P. Rato, Rouby, X., Ruggiero, G., Smith, K., Sonderegger, P., Sousa, P., Tuominen, E., Tuovinen, E., Verbitskaya, E., Vaitkus, J., Wobst, E., and Zavrtanik, M.

Published
2007
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12. Recent developments of CERN RD39 cryogenic tracking detectors collaboration: CERN RD39 Collaboration

Author

Rouby, X., Anbinderis, P., Anbinderis, T., D’Ambrosio, N., Bates, R., de Boer, W., Bol, H., Borchi, E., Bruzzi, M., Buontempo, S., Buttar, C., Chen, W., Cindro, V., Eremin, V., Furgeri, A., Gaubas, E., Grigoriev, E., Härkönen, J., Heijne, E., Heising, S., Ilyashenko, I., Kalesinskas, V., Krause, M., Li, Z., Luukka, P., Mandic, I., Menichelli, D., Mikuz, M., Militaru, O., Mueller, S., Niinikoski, T.O., O’Shea, V., Pagano, S., Parkes, C., Piotrzkowski, K., Pirollo, S., Pusa, P., Reinhardt, S., Räisänen, J., Tuominen, E., Tuovinen, E., Vaitkus, J., Verbitskaya, E., Väyrynen, S., and Zavrtanik, M.

Published
2007
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16. Low-temperature tracking detectors

Author

Niinikoski, T.O, Abreu, M, Anbinderis, P, Anbinderis, T, D'Ambrosio, N, de Boer, W, Borchi, E, Borer, K, Bruzzi, M, Buontempo, S, Chen, W, Cindro, V, Dezillie, B, Dierlamm, A, Eremin, V, Gaubas, E, Gorbatenko, V, Granata, V, Grigoriev, E, Grohmann, S, Hauler, F, Heijne, E, Heising, S, Hempel, O, Herzog, R, Härkönen, J, Ilyashenko, I, Janos, S, Jungermann, L, Kalesinskas, V, Kapturauskas, J, Laiho, R, Li, Z, Luukka, P, Mandic, I, De Masi, R, Menichelli, D, Mikuz, M, Militaru, O, Nuessle, G, O'Shea, V, Pagano, S, Paul, S, Perea Solano, B, Piotrzkowski, K, Pirollo, S, Pretzl, K, Rahman, M, Rato Mendes, P, Rouby, X, Ruggiero, G, Smith, K, Sousa, P, Tuominen, E, Tuovinen, E, Vaitkus, J, Verbitskaya, E, da Viá, C, Vlasenko, L, Vlasenko, M, Wobst, E, and Zavrtanik, M

Published
2004
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17. Recent results from the CERN RD39 Collaboration on super-radiation hard cryogenic silicon detectors for LHC and LHC upgrade

Author

Härkönen, J., Abreu, M., Anbinderis, P., Anbinderis, T., D’Ambrosio, N., de Boer, W., Borchi, E., Borer, K., Bruzzi, M., Buontempo, S., Chen, W., Cindro, V., Dezillie, B., Dierlamm, A., Eremin, V., Gaubas, E., Gorbatenko, V., Granata, V., Grigoriev, E., Grohmann, S., Hauler, F., Heijne, E., Heising, S., Hempel, O., Herzog, R., Ilyashenko, I., Janos, S., Jungermann, L., Kalesinskas, V., Kapturauskas, J., Laiho, R., Li, Z., Luukka, P., Mandic, I., De Masi, R., Menichelli, D., Mikuz, M., Militaru, O., Niinikoski, T.O., Nuessle, G., O’Shea, V., Pagano, S., Paul, S., Perea Solano, B., Piotrzkowski, K., Pirollo, S., Pretzl, K., Rahman, M., Rato Mendes, P., Rouby, X., Ruggiero, G., Smith, K., Sousa, P., Tuominen, E., Tuovinen, E., Vaitkus, J., Verbitskaya, E., Da Viá, C., Vlasenko, L., Vlasenko, M., Wobst, E., and Zavrtanik, M.

Published
2004
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18. The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles

Author

Verbitskaya, E., Abreu, M., Anbinderis, P., Anbinderis, T., D'Ambrosio, N., de Boer, W., Borchi, E., Borer, K., Bruzzi, M., Buontempo, S., Casagrande, L., Chen, W., Cindro, V., Dezillie, B., Dierlamm, A., Eremin, V., Gaubas, E., Gorbatenko, V., Granata, V., Grigoriev, E., Grohmann, S., Hauler, F., Heijne, E., Heising, S., Hempel, O., Herzog, R., Härkönen, J., Ilyashenko, I., Janos, S., Jungermann, L., Kalesinskas, V., Kapturauskas, J., Laiho, R., Li, Z., Mandic, I., De Masi, Rita, Menichelli, D., Mikuz, M., Militaru, O., Niinikoski, T.O., O'Shea, V., Pagano, S., Palmieri, V.G., Paul, S., Perea Solano, B., Piotrzkowski, K., Pirollo, S., Pretzl, K., Rato Mendes, P., Ruggiero, G., Smith, K., Sonderegger, P., Sousa, P., Tuominen, E., Vaitkus, J., da Viá, C., Wobst, E., and Zavrtanik, M.

Published
2003
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19. UWB ISAR imaging in 109–172 GHz frequency band

Author

Matuzas, J., primary, Levitas, B., additional, Drozdov, M., additional, Anbinderis, T., additional, Anbinderis, P., additional, Kryshev, L., additional, Kuch, S., additional, Gorbatenko, V., additional, and Ikonikova, E., additional

Published
2015
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20. RD39 Status Report 2009

Author

Anbinderis, P, Anbinderis, T, Bates, R, Bol, H, Buttar, C, Chen, W, Cindro, V, de Boer, W, Eremin, V, Gaubas, E, Grigoriev, E, Härkönen, J, Heijne, E, Heising, S, Ilyashenko, I, Kalesinskas, V, Krause, M, Li, Z, Luukka, P, Mäenpää, T, Mandi, I, Mikuz, M, Mueller, S, Niinikoski, T, O'Shea, V, Parkes, C, Pusa, P, Räisänen, J, Reinhardt, S, Spiegel, L, Tuominen, E, Tuovinen, E, Vaitkus, J, Väyrynen, S, Verbitskaya, E, and Zavrtanik, M

Subjects
Physics::Instrumentation and Detectors, High Energy Physics::Experiment, Detectors and Experimental Techniques
Abstract

RD39 Status Report 2009. CERN RD39 Collaboration is developing super-radiation hard cryogenic silicon detectors for applications of LHC experiments and their future upgrades. The activities of RD39 Collaboration were focused in 2009 on concept of charge injected detector (CID).

Published
2010

21. RD39 Status Report 2008

Author

Rouby, X, Anbinderis, P, Anbinderis, T, Bates, R, de Boer, Wim, Borchi, E, Bruzzi, M, Buontempo, S, Buttar, C, Chen, W, Cindro, V, Eremin, V, Furgeri, A, Gaubas, E, Härkönen, J, Heijne, Erik H M, Ilyashenko, I, Kalesinskas, V, Krause, M, Li, Z, Luukka, P, Mandic, I, Menichelli, D, Mikuz, M, Militaru, O, Moilanen, H, Müller, S, Mäenpää, T, Niinikoski, T O, O'Shea, V, Pagano, S, Parkes, C, Piotrzkowski, K, Pirollo, S, Pusa, P, Räisänen, J, Tuominen, E, Tuovinen, E, Vaitkus, J, Verbitskaya, E, Väyrynen, S, and Zavrtanik, M

Subjects
Detectors and Experimental Techniques
Abstract

RD39 Status Report 2008

Published
2008

22. RD39 Status Report 2007

Author

Härkönen, Jaakko, Anbinderis, P, Anbinderis, T, D'Ambrosio, N, Bates, R, de Boer, Wim, Borchi, E, Bruzzi, M, Buontempo, S, Buttar, C, Chen, W, Cindro, V, Eremin, V, Furgeri, A, Gaubas, E, Grigoriev, E, Heijne, Erik H M, Ilyashenko, I, Kalesinskas, V, Krause, M, Li, Z, Luukka, P, Mandic, I, Menichelli, D, Mikuz, M, Militaru, O, Müller, S, Niinikoski, T O, O'Shea, V, Pagano, S, Parkes, C, Piotrzkowski, K, Pirollo, S, Raisanen, J, Pusa, P, Tuominen, E, Tuovinen, E, Vaitkus, J, Verbitskaya, E, Vyrynen, S, and Zavrtanik, M

Subjects
Detectors and Experimental Techniques
Published
2007

23. RD39 Status Report 2004

Author

Borer, K, Janos, S, Pretzl, K, Chen, W, Li, Z, Da Vià, C, Casagrande, L, Grohmann, S, Heijne, Erik H M, Lourenço, C, Niinikoski, T O, Nüssle, G, Perea-Solano, B, Hempel, O, Herzog, R, Wobst, E, Borchi, E, Bruzzi, M, Menichelli, D, Pirollo, S, Popowski, Y, Bates, R, Buttar, C, O'Shea, V, Parkes, C, Hrknen, J, Luukka, P, Tuovinen, E, Tuominen, E, de Boer, Wim, Bol, H, Dierlamm, A, Furgeri, A, Grigoriev, E, Hauler, F, Jungermann, L, Abreu, M, Rato-Mendes, P, Sonderegger, P, Sousa, P, García, E, Lisbon, Cindro, V, Mandic, I, Mikuz, M, Zavrtanik, M, Militaru, O, Piotrzkowski, K, Rouby, X, De Masi, Rita, Paul, S, Buontempo, S, D'Ambrosio, N, Pagano, S, Eremin, V, Ilyashenko, I, Verbitskaya, E, Laiho, R, Vlasenko, L, Vlasenko, M, Anbinderis, P, Anbinderis, T, Gaubas, E, Gorbatenko, V, Kalesinskas, V, Kapturauskas, J, and Vaitkus, J

Subjects
Detectors and Experimental Techniques
Published
2004

24. RD39 Status Report 2003

Author

Borer, K, Janos, S, Pretzl, K, Britvitch, I, Kuznetsov, A A, Musienko, Y, Reucroft, S, Swain, J, Chen, W, Li, Z, Da Vià, C, Casagrande, L, Grohmann, S, Heijne, Erik H M, Lourenço, C, Niinikoski, T O, Nüssle, G, Palmieri, V G, Perea-Solano, B, Hempel, O, Herzog, R, Wobst, E, Borchi, E, Bruzzi, M, Menichelli, D, Pirollo, S, Popowski, Y, O'Shea, V, Rahman, M, Ruggiero, G, Härkönen, J, Luukka, Panja, Tuominen, E, Tuovinen, E, de Boer, Wim, Bol, H, Dierlamm, A, Furgeri, A, Grigoriev, E, Hauler, F, Jungermann, L, Abreu, M, Rato-Mendes, P, Sonderegger, P, Sousa, P, Cindro, V, Mandic, I, Mikuz, M, Zavrtanik, M, Militaru, O, Piotrzkowski, K, Rouby, X, De Masi, R, Paul, S, Buontempo, S, D'Ambrosio, N, Pagano, S, Eremin, V, Ilyashenko, Yu S, Verbitskaya, E, Laiho, R, Vlasenko, L, Vlasenko, M, Anbinderis, P, Anbinderis, T, Gaubas, E, Gorbatenko, V, Kalesinskas, V, Kapturauskas, J, and Vaitkus, J

Subjects
Detectors and Experimental Techniques
Published
2003

25. Recent progress in CERN RD39: radiation hard cryogenic silicon detectors for applications in LHC experiments and their future upgrades

Author

Tuominen, E., primary, Anbinderis, P., additional, Anbinderis, T., additional, Bates, R., additional, de Boer, W., additional, Borchi, E., additional, Bruzzi, M., additional, Buttar, C., additional, Chen, W., additional, Cindro, V., additional, Czellar, S., additional, Eremin, V., additional, Furgeri, A., additional, Gaubas, E., additional, Harkonen, J., additional, Heijne, E., additional, Ilyashenko, I., additional, Kalesinskas, V., additional, Kortelainen, M. J., additional, Krause, M., additional, Lampen, T., additional, Li, Z., additional, Luukka, P., additional, Mandic, I., additional, Menichelli, D., additional, Mikuz, M., additional, Militaru, O., additional, Mueller, S., additional, Maenpaa, T., additional, Niinikoski, T. O., additional, O'Shea, V., additional, Parkes, C., additional, Piotrzkowski, K., additional, Pirollo, S., additional, Pusa, P., additional, Raisanen, J., additional, Rouby, X., additional, Tuovinen, E., additional, Vaitkus, J., additional, Verbitskaya, E., additional, Vayrynen, S., additional, and Zavrtanik, M., additional

Published
2008
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27. Si WAFER QUALITY CHARACTERIZATION BY SCANNING MILLIMETER WAVE BEEM.

Author

Laurinavičius, Albertas and Anbinderis, Tomas

Subjects
MILLIMETER waves, ELECTRONIC excitation, MICROWAVES, MILLIMETER wave devices, BEAM dynamics, HOMOGENEITY
Abstract

Millimeter wave bridge technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing material and the measurement of the transmitted (reflected) wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. Results of the homogeneity measurements for some Si wafers produced by different companies are presented. The measurement technique sensitivity is discussed. [ABSTRACT FROM AUTHOR]

Published
2008

28. NON-DESTRUCTIVE MATERIAL HOMOGENEITY EVALUATION USING SCANNING MILLIMETER WAVE BEAM.

Author

Laurinavičius, A., Anbinderis, T., Martianova, O., and Prishutov, Yu.

Subjects
MILLIMETER waves, SCANNING electron microscopes, SCATTERING amplitude (Physics), DIELECTRICS, SEMICONDUCTOR wafers, SEMICONDUCTORS
Abstract

Millimeter wave bridge technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing material and the measurement of the transmitted wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. Same results of the homogeneity measurements for semiconductor and dielectric wafers are presented. The measurement technique sensitivity is discussed. [ABSTRACT FROM AUTHOR]

Published
2006

29. Microwave Diode on the Base of Symmetrically and Asymmetrically Doped Semiconductor Heterojunction.

Author

Sužiedėlis, A., Ašmontas, S., Kundrotas, A. J., Gradauskas, J., Lučun, A., Čerškus, A., Nargelienė, V., Anbinderis, T., and Anbinderis, P.

Subjects
MICROWAVE diodes, HETEROJUNCTIONS, SEMICONDUCTOR research, SCHOTTKY barrier diodes, GALLIUM arsenide
Abstract

Microwave diodes on the basis of semiconductor heterojunction are considered as an alternative for Schottky junction diode. Preliminary experimental results of DC and high frequency parameters of the planar GaAs/AlxGa1-xAs isotype heterojunction diodes with symmetrically doped narrow- and wide-gap semiconductors are presented. New design of the heterojunction diode with different doping of the n-GaAs and n-Al0.2Ga0.8As semiconductor epitaxial layers is considered as well. [ABSTRACT FROM AUTHOR]

Published
2013

30. RD39 status report

Author

Borer, K., Janos, S., Pretzl, K., Britvich, I., Kuznetsov, A., Musienko, Yu, Reucroft, S., Swain, J., Chen, W., Li, Zheng, Da Via, C., Casagrande, L., Grohmann, S., Heijne, E., Lourenco, C., Niinikoski, T. O., Nussle, G., Palmieri, V. G., Perea Solano, B., Hempel, O., Herzog, R., Wobst, E., Borchi, E., Bruzzi, M., Menichelli, D., Pirollo, S., Popowski, Y., O Shea, V., Rahman, M., Ruggiero, G., Harkonen, J., Luukka, P., Tuominen, E., Tuovinen, E., Boer, W., Bol, J., Dierlamm, A., Furgeri, A., Grigorev, E., Hauler, F., Jungermann, L., Abreu, M. C., Rato-Mendes, P., Sonderegger, P., Sousa, P., Cindro, V., Mandic, I., Mikuz, M., Zavrtanik, M., Militaru, O., Piotrzkowski, K., Rouby, X., Masi, R., Stephan Paul, Buontempo, S., D Ambrosio, N., Pagano, S., Eremin, V., Ilyashenko, I., Verbitskaya, E., Laiho, R., Vlasenko, L., Vlasenko, M., Anbinderis, P., Anbinderis, T., Gaubas, E., Gorbatenko, V., Kalesinskas, V., Kapturauskas, J., and Vaitkus, J.

32. RD39 status report 2007

Author

Rouby, X., Anbinderis, P., Anbinderis, T., D Ambrosio, N., Bates, R., Boer, W., Borchi, E., Bruzzi, M., Buontempo, S., Craig Buttar, Chen, W., Cindro, V., Eremin, V., Furgeri, A., Gaubas, E., Grigoriev, E., Harkonen, Jaakko, Heijne, E., Ilyashenko, I., Kalesinskas, V., Krause, M., Li, Zheng, Luukka, P., Mandic, I., Menichelli, D., Mikuz, M., Militaru, O., Mueller, S., Niinikoski, T. O., O Shea, V., Pagano, S., Parkes, C., Piotrzkowski, K., Pirollo, S., Pusa, P., Raisanen, J., Tuominen, Eija, Tuovinen, E., Vaitkus, J., Verbitskaya, E., Vayrynen, S., and Zavrtanik, M.

33. RD39 status report 2006

Author

Rouby, X., Militaru, O., Piotrzkowski, K., Vladimir Cindro, Mandic, I., Mikuz, M., Zavrtanik, M., Anbinderis, P., Anbinderis, T., Gaubas, E., Kalesinskas, V., Vaitkus, J., D Ambrosio, N., Buontempo, S., Pagano, S., Bates, R., Buttar, C., O Shea, V., Parkes, C., Boer, Wim, Bol, Johannes, Furgeri, A., Heising, S., Krause, M., Muller, Steffen, Reinhardt, S., Borchi, E., Bruzzi, M., Menichelli, D., Pirollo, S., Chen, W., Li, Z., Eremin, V., Ilyashenko, I., Verbitskaya, E., Grigoriev, E., Harkonen, J., Luukka, P., Tuominen, E., Tuovinen, E., Heijne, E., Niinikoski, T. O., Pusa, P., Raisanen, J., and Vayrynen, S.

Subjects
Detectors and Experimental Techniques

34. RD39 status report 2005

Author

Britvich, I., Kuznetsov, A., Musienko, Yu, Reucroft, S., Swain, J., Chen, W., Li, Z., Grohmann, S., Heijne, E., Lourenco, C., Niinikoski, T. O., Nussle, G., Perea Solano, B., Hempel, O., Herzog, R., Wobst, E., Borchi, E., Bruzzi, M., Menichelli, D., Pirollo, S., Popowski, Y., Bates, R., Craig Buttar, O Shea, V., Parkes, C., Harkonen, J., Luukka, P., Tuominen, E., Tuovinen, E., Boer, W., Bol, J., Dierlamm, A., Furgeri, A., Grigoriev, E., Hauler, F., Jungermann, L., Abreu, M. C., Rato-Mendes, P., Sonderegger, P., Sousa, P., Cindro, V., Mandic, I., Mikuz, M., Zavrtanik, M., Militaru, O., Piotrzkowski, K., Rouby, X., Masi, R., Paul, S., Buontempo, S., D Ambrosio, N., Pagano, S., Eremin, V., Ilyashenko, I., Verbitskaya, E., Laiho, R., Vlasenko, L., Vlasenko, M., Anbinderis, P., Anbinderis, T., Gaubas, E., Gorbatenko, V., Kalesinskas, V., Kapturauskas, J., and Vaitkus, J.

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