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2. Crystallographic orientation dependence of impurity incorporation into III-V compound semiconductors grown by metalorganic vapor phase epitaxy

Author

Kondo, Makoto, Anayama, Chikashi, Okada, Naoko, Sekiguchi, Hiroshi, Domen, Kay, and Tanahashi, Toshiyuki

Subjects
Semiconductors -- Research, Epitaxy -- Analysis, Crystals -- Structure, Physics
Abstract

Impurity introduction in metalorganic vapor phase epitaxy-developed, III-V compound semiconductors depends on crystallographic orientation of the semiconductors. The dependence varies for group-V and group-III sublattice impurities. A model that represents the orientation dependence includes atomic bonding geometries between impurity absorption sites and absorbates, with surface kinetics as the major determinant of the dependence.

Published
1994

15. X-ray investigation of the ordered structure in AlGaInP quaternary alloys.

Author

Okuda, Hiroshi, Anayama, Chikashi, Tanahashi, Toshiyuki, and Nakajima, Kazuo

Subjects
*ALUMINUM alloys, *GALLIUM arsenide, *METAL organic chemical vapor deposition
Abstract

The ordered structure occurring in AlGaInP quaternary alloys grown on GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction measurements. The order spot became strong as the Al content increased, and was observed only for the (1/2 ∼(1/2) 1/2) diffraction, corresponding to CuPt-type (111)B ordering. Kinematical analysis implies that the full width at half maximum of the order spot is strongly affected by the antiphase boundary, whereas the integrated intensity is not. [ABSTRACT FROM AUTHOR]

Published
1989
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