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International audience; The importance of atomic structure to understand the superconducting β-Tungsten (W) thin films especially their critical transition temperature (Tc) and upper critical magnetic field Hc2(0) is reported. Here, Tc and Hc2(0) for a low thickness (~ 35 nm) film are found to be ~ 3.14 K and 10.72 T, whereas for a comparatively thicker (~ 60 nm) film, these are 1.38 K and 2.34 T, respectively. The β-phase is identified by grazing-incidence X-ray diffraction. The microstructure is probed by transmission electron microscopy, where high-resolution images manifest an improvement in crystallinity of the nanoscale grains in a disordered matrix with increasing film thickness. A drastic change in atomic structure corresponding to two different thicknesses is found to be associated with the change in oxygen concentration. Particularly, the existence of amorphous-W in the presence of β-W is revealed in 35 nm film, which is further supported by ab-initio calculations. Based on the atomic and microstructure, superconducting properties of the β-W films are analyzed and discussed.

A clear understanding of the surface chemical reactivity of tungsten (W) films is indispensable for photocatalytic, sensing and memory applications, especially in the presence of WOx (0 ≤ x ≤ 3) for low thicknesses. Here, surface reactivity of the film through diffusion of oxygen and its ability to make bonds with W is identified by X-ray photoelectron spectroscopy (XPS). Further inspection of XPS valence band spectra confirms the possible hybridization of W 5d and O 2p electrons in the presence of defect states near Fermi level. Exploration of surface morphology by scanning electron microscopy (SEM) reveals agglomeration of grains with increasing film thickness. Detailed microstructural and grazing-incidence X-ray diffraction (GIXRD) studies suggest the formation of β W nanocrystallites in amorphous matrix, and establish a knowledge of thickness dependent phase transformation of W beside surface oxidation. The nonlinear surface current–voltage characteristics at low thickness further indicates dimensional phase change owing to the involvement of point defects. We also report a detailed study of interstitial and vacancy mediated diffusion probability of oxygen in W films, where the estimated diffusion constant is found to be relatively higher than that of other body-centered cubic transition metals.

The β phase of tungsten has attracted great interest for spintronic applications due to its higher spin Hall angle compared to other elemental solids and large spin–orbit torque, but the stability of this phase is yet to be well understood as many different results are there in the literature mainly based on the film thickness, temperature, and overall growth conditions. The growth of films by sputter deposition has emerged as a promising technique to achieve β-W owing to its compatibility with current spintronic technology. We demonstrate here the efficient ability of dc magnetron sputtering to grow stable β-W films up to a thickness of ∼180 nm at room temperature by varying a set of deposition parameters like pressure, power, and deposition time and discuss the various underlying mechanisms. From these results, the optimized set of deposition parameters for growing β-W films is given. A clear understanding of the influence of oxygen in the atomic structure of β-W is obtained by varying the thickness of the films. This is confirmed from the ab initio molecular dynamics (MD) simulations, where the atomic structure is influenced by the oxygen doping concentration. A stable polycrystalline β phase can be achieved by controlled doping of oxygen. Additionally, a phase transformation from α to β with the doping of oxygen is also evident by MD simulations.

Thin films of β-W are the most interesting for manipulating magnetic moments using spin–orbit torques, and a clear understanding of α to β phase transition in W by doping impurity, especially oxygen, is needed. Here we present a combined experimental and theoretical study using grazing incidence X-ray diffraction, photoelectron spectroscopy, electron microscopy, and ab initio calculations to explore atomic structure, bonding, and oxygen content for understanding the formation of β-W. It is found that the W films on SiO2/Si have 13–22 at.% oxygen in A15 β structure. Ab initio calculations show higher solution energy of oxygen in β-W, and a tendency to transform locally from α to β phase with increasing oxygen concentration. X-ray absorption spectroscopy also revealed local geometry of oxygen in β-W, in agreement with the simulated one. These results offer an opportunity for a fundamental understanding of the structural transition in α-W and further development of β-W phase for device applications.

We investigate here the structural phase transformation and electrical resistive switching properties of TiO 2 thin films (80 nm) after their self-ion implantation with 50 keV Ti + ions at several fluences. UV-Raman, grazing incidence x-ray diffraction (GIXRD), transmission electron microscopy, x-ray photoelectron spectroscopy, and atomic force microscopy techniques have been utilized to investigate the modifications in thin films. Both, the as-grown and ion implanted, films display mixed phases of rutile (R) and anatase (A). Surprisingly, however, a phase transition from A to R is observed at a critical fluence, where some anatase content transforms into rutile. This A to R transformation increases with additional fluence. The critical fluence found by GIXRD is slightly smaller ( 1 × 10 13 ions/cm 2) than from UV-Raman ( 1 × 10 14 ions/cm 2), indicating the first initiation of phase transformation probably in bulk. All the films contain anatase in nanocrystalline form also and the phase transformation seems to take place via aggregation of anatase nanoparticles. Thin films also show the presence of oxygen vacancies (O V) Ti 3 +, whose number grows with fluence. These O V as well as thermal spikes created during Ti + ion implantation are also crucial for the A-R transition. After implantation at the highest fluence, TiO 2 thin films show bipolar resistive switching behavior. The development of conducting filaments, formed by the migration of many oxygen vacancies generated during ion implantation, can be responsible for this behavior.We investigate here the structural phase transformation and electrical resistive switching properties of TiO 2 thin films (80 nm) after their self-ion implantation with 50 keV Ti + ions at several fluences. UV-Raman, grazing incidence x-ray diffraction (GIXRD), transmission electron microscopy, x-ray photoelectron spectroscopy, and atomic force microscopy techniques have been utilized to investigate the modifications in thin films. Both, the as-grown and ion implanted, films display mixed phases of rutile (R) and anatase (A). Surprisingly, however, a phase transition from A to R is observed at a critical fluence, where some anatase content transforms into rutile. This A to R transformation increases with additional fluence. The critical fluence found by GIXRD is slightly smaller ( 1 × 10 13 ions/cm 2) than from UV-Raman ( 1 × 10 14 ions/cm 2), indicating the first initiation of phase transformation probably in bulk. All the films contain anatase in nanocrystalline form also and the phase t...