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In recent years, spiking neural networks (SNNs) have attracted substantial interest due to their potential to replicate the energy-efficient and event-driven processing of biological neurons. Despite this, the application of SNNs in graph representation learning, particularly for non-Euclidean data, remains underexplored, and the influence of spiking dynamics on graph learning is not yet fully understood. This work seeks to address these gaps by examining the unique properties and benefits of spiking dynamics in enhancing graph representation learning. We propose a spike-based graph neural network model that incorporates spiking dynamics, enhanced by a novel spatial-temporal feature normalization (STFN) technique, to improve training efficiency and model stability. Our detailed analysis explores the impact of rate coding and temporal coding on SNN performance, offering new insights into their advantages for deep graph networks and addressing challenges such as the oversmoothing problem. Experimental results demonstrate that our SNN models can achieve competitive performance with state-of-the-art graph neural networks (GNNs) while considerably reducing computational costs, highlighting the potential of SNNs for efficient neuromorphic computing applications in complex graph-based scenarios.

Graph representation learning has become a crucial task in machine learning and data mining due to its potential for modeling complex structures such as social networks, chemical compounds, and biological systems. Spiking neural networks (SNNs) have recently emerged as a promising alternative to traditional neural networks for graph learning tasks, benefiting from their ability to efficiently encode and process temporal and spatial information. In this paper, we propose a novel approach that integrates attention mechanisms with SNNs to improve graph representation learning. Specifically, we introduce an attention mechanism for SNN that can selectively focus on important nodes and corresponding features in a graph during the learning process. We evaluate our proposed method on several benchmark datasets and show that it achieves comparable performance compared to existing graph learning techniques.

Spiking neural networks (SNNs), inspired by the neural circuits of the brain, are promising in achieving high computational efficiency with biological fidelity. Nevertheless, it is quite difficult to optimize SNNs because the functional roles of their modelling components remain unclear. By designing and evaluating several variants of the classic model, we systematically investigate the functional roles of key modelling components, leakage, reset, and recurrence, in leaky integrate-and-fire (LIF) based SNNs. Through extensive experiments, we demonstrate how these components influence the accuracy, generalization, and robustness of SNNs. Specifically, we find that the leakage plays a crucial role in balancing memory retention and robustness, the reset mechanism is essential for uninterrupted temporal processing and computational efficiency, and the recurrence enriches the capability to model complex dynamics at a cost of robustness degradation. With these interesting observations, we provide optimization suggestions for enhancing the performance of SNNs in different scenarios. This work deepens the understanding of how SNNs work, which offers valuable guidance for the development of more effective and robust neuromorphic models.

The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as hybrid CMOS/memristive neuromorphic crossbar arrays. Recent attempts to introduce transitive functions into memristors have given rise to gate-tunable memristive functions, hetero-plasticity and mixed-plasticity functions. However, it remains elusive under what application scenarios and in what ways transistors can benefit from the incorporation of ion-based memristive effects. Here, we introduce a new type of transistor named 'mempolar transistor' to the transistor family. Its polarity can be converted reversibly, in a nonvolatile fashion, between n-type and p-type depending on the history of the applied electrical stimulus. This is achieved by the use of the emerging semiconducting tellurium as the electrochemically active source/drain contact material, in combination with monolayer two-dimensional MoS2 channel, which results in a gated lateral Te/MoS2/Te memristor, or from a different perspective, a transistor whose channel can be converted reversibly between n-type MoS2 and p-type Te. With this unique mempolar function, our transistor holds the promise for reconfigurable logic circuits and secure circuits. In addition, we propose and demonstrate experimentally, a ternary content-addressable memory made of only two mempolar transistors, which used to require a dozen normal transistors, and by simulations, a device-inspired and hardware matched regularization method 'FlipWeight' for training artificial neural networks, which can achieve comparable performance to that achieved by the prevalent 'Dropout' and 'DropConnect' methods. This work represents a major advance in diversifying the functionality of transistors.

The understanding of neural networks as neuron-synapse binaries has been the foundation of neuroscience, and therefore, the emerging neuromorphic computing technology that takes inspiration from the brain. This dogma, however, has been increasingly challenged by recent neuroscience research in which the downplayed dendrites were found to be active, dynamically unique and computationally powerful. To date, research on artificial dendrites is scarce and the few existing devices are still far from versatile or (and) bio-realistic. A breakthrough is hampered by the limited available physical mechanisms in mainstream device architectures. Here, we experimentally demonstrate a bio-realistic and versatile artificial dendrite made of WSe2/MoS2 heterojunction-channel anti-ambipolar transistor, which can closely mimic the experimentally recorded non-monotonic dendritic Ca2+ action potential that underpins various sophisticated computations. Spiking neural network simulations reveal that the incorporation of this nonconventional but bio-realistic dendritic activation enhances the robustness and representational capability of the network in non-stationary environments. By further exploiting the memristive effect, dendritic anti-ambipolar transistor can naturally mimic Ca2+-mediated regulation of synaptic plasticity (meta-plasticity) at dendritic spine, an important homeostatic phenomenon due to dendritic modulation. The invention of dendritic anti-ambipolar transistor completes the family of neuromorphic transistors and represents a major advance in diversifying the functionality of transistors.

Biological spiking neurons with intrinsic dynamics underlie the powerful representation and learning capabilities of the brain for processing multimodal information in complex environments. Despite recent tremendous progress in spiking neural networks (SNNs) for handling Euclidean-space tasks, it still remains challenging to exploit SNNs in processing non-Euclidean-space data represented by graph data, mainly due to the lack of effective modeling framework and useful training techniques. Here we present a general spike-based modeling framework that enables the direct training of SNNs for graph learning. Through spatial-temporal unfolding for spiking data flows of node features, we incorporate graph convolution filters into spiking dynamics and formalize a synergistic learning paradigm. Considering the unique features of spike representation and spiking dynamics, we propose a spatial-temporal feature normalization (STFN) technique suitable for SNN to accelerate convergence. We instantiate our methods into two spiking graph models, including graph convolution SNNs and graph attention SNNs, and validate their performance on three node-classification benchmarks, including Cora, Citeseer, and Pubmed. Our model can achieve comparable performance with the state-of-the-art graph neural network (GNN) models with much lower computation costs, demonstrating great benefits for the execution on neuromorphic hardware and prompting neuromorphic applications in graphical scenarios., Comment: Accepted by IJCAI-21

Two main routes of learning methods exist at present including error-driven global learning and neuroscience-oriented local learning. Integrating them into one network may provide complementary learning capabilities for versatile learning scenarios. At the same time, neuromorphic computing holds great promise, but still needs plenty of useful algorithms and algorithm-hardware co-designs for exploiting the advantages. Here, we report a neuromorphic hybrid learning model by introducing a brain-inspired meta-learning paradigm and a differentiable spiking model incorporating neuronal dynamics and synaptic plasticity. It can meta-learn local plasticity and receive top-down supervision information for multiscale synergic learning. We demonstrate the advantages of this model in multiple different tasks, including few-shot learning, continual learning, and fault-tolerance learning in neuromorphic vision sensors. It achieves significantly higher performance than single-learning methods, and shows promise in empowering neuromorphic applications revolution. We further implemented the hybrid model in the Tianjic neuromorphic platform by exploiting algorithm-hardware co-designs and proved that the model can fully utilize neuromorphic many-core architecture to develop hybrid computation paradigm., Comment: 5 figures, 6 tables

Recently deep neural networks (DNNs) have been successfully introduced to the field of lensless imaging through scattering media. By solving an inverse problem in computational imaging, DNNs can overcome several shortcomings in the conventional lensless imaging through scattering media methods, namely, high cost, poor quality, complex control, and poor anti-interference. However, for training, a large number of training samples on various datasets have to be collected, with a DNN trained on one dataset generally performing poorly for recovering images from another dataset. The underlying reason is that lensless imaging through scattering media is a high dimensional regression problem and it is difficult to obtain an analytical solution. In this work, transfer learning is proposed to address this issue. Our main idea is to train a DNN on a relatively complex dataset using a large number of training samples and fine-tune the last few layers using very few samples from other datasets. Instead of the thousands of samples required to train from scratch, transfer learning alleviates the problem of costly data acquisition. Specifically, considering the difference in sample sizes and similarity among datasets, we propose two DNN architectures, namely LISMU-FCN and LISMU-OCN, and a balance loss function designed for balancing smoothness and sharpness. LISMU-FCN, with much fewer parameters, can achieve imaging across similar datasets while LISMU-OCN can achieve imaging across significantly different datasets. What's more, we establish a set of simulation algorithms which are close to the real experiment, and it is of great significance and practical value in the research on lensless scattering imaging. In summary, this work provides a new solution for lensless imaging through scattering media using transfer learning in DNNs.

Generative adversarial networks have achieved remarkable performance on various tasks but suffer from training instability. Despite many training strategies proposed to improve training stability, this issue remains as a challenge. In this paper, we investigate the training instability from the perspective of adversarial samples and reveal that adversarial training on fake samples is implemented in vanilla GANs, but adversarial training on real samples has long been overlooked. Consequently, the discriminator is extremely vulnerable to adversarial perturbation and the gradient given by the discriminator contains non-informative adversarial noises, which hinders the generator from catching the pattern of real samples. Here, we develop adversarial symmetric GANs (AS-GANs) that incorporate adversarial training of the discriminator on real samples into vanilla GANs, making adversarial training symmetrical. The discriminator is therefore more robust and provides more informative gradient with less adversarial noise, thereby stabilizing training and accelerating convergence. The effectiveness of the AS-GANs is verified on image generation on CIFAR-10 , CelebA, and LSUN with varied network architectures. Not only the training is more stabilized, but the FID scores of generated samples are consistently improved by a large margin compared to the baseline. The bridging of adversarial samples and adversarial networks provides a new approach to further develop adversarial networks.

The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy relation (D(E)), engineering the source: channel interface for gate-tunable channel-barrier is crucial to a CS-FET. However, conventional metal: semiconductor (MS)-interfaces generally suffer from strong Fermi-level-pinning due to the inevitable chemical disorder and defect-induced gap states, precluding the gate-tunability of the barriers. By comprehensive materials and device modeling at the atomic-scale, we report that the two-dimensional (2D)-van der Waals (vdW)-MS-interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS-FETs. As test cases, InSe-based n-type FETs are studied. It is found that graphene can be spontaneously p-type doped along with slightly opened bandgap around the Dirac-point by interfacing with InSe, resulting in super-exponentially decaying hot carrier density with increasing n-type channel-barrier. Moreover, the D(E) relations suggest that 2D-transition-metal-dichalcogenides and 2D-transition-metal-carbides are rich libraries of CS materials. Both graphene and H-TaTe2 CSs lead to subthreshold swing below 60 mV/decade. This work broadens the application potentials of 2D-vdW-MS-heterostructures and serves as a springboard for more studies on low-power electronics based on 2D materials., Comment: Advanced Materials (2020)