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Hybrid photonic devices, harnessing the advantages of multiple materials while mitigating their respective weaknesses, represent a promising solution to the effective on-chip integration of generation and manipulation of non-classical states of light encoding quantum information. We demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al-GaAs source and their subsequent routing to a silicon-on-insulator circuitry. This enables the on-chip generation of broadband telecom photon pairs by type 0 and type 2 SPDC from the hybrid device, at room temperature and with strong rejection of the pump beam. Two-photon interference with 92% visibility proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications.

Integrated quantum photonics is a key tool towards large scale quantum technologies. In this work we present an AlGaAs-based photonic circuit for the on-chip generation of broadband orthogonally polarized photons and the deterministic separation of the photons into separate spatial modes, facilitating their further use in protocols. We demonstrate that 85% of the pairs are deterministically separated by the chip over a full 60 nm bandwidth and we assess the chip operation in the quantum regime via a Hong-Ou-Mandel experiment displaying a raw visibility of 75.5% over the same full bandwidth.

Hybrid photonic devices represent a promising solution to the effective on-chip integration of all the components required for the generation, manipulation and detection of non-classical states of light encoding quantum information. We present an AlGaAs source of highly entangled photon pairs envisioned for the hybridization with silicon-on-insulator integrated platforms, in order to take benefit from the strong second order nonlinearity and the compliance with electrical pumping of the III-V platform and the maturity and CMOS compatibility of silicon photonic circuitry, enabling a wide variety of quantum information applications.

A multiwavelength quantum cascade laser (QCL) operating at 1.39 and 2.3 THz in a strong magnetic field is studied. The possibility of achieving vertical emission from QCL by using an optical cavity formed by two-dimensional photonic crystal operating at 3.7 THz is discussed.

We present a heterogeneous terahertz quantum cascade laser that emits continuously between 2.2 and 3.2 THz, covering an emission range of over 40% around the central frequency. Devices were realized by stacking different active region designs into a double-metal waveguide. They operate up to 125 K with 15 mW peak power at 10 K in pulsed mode. Smaller devices show broadband emission also in continuous wave. Time-resolved measurements of the emission spectra were realized, confirming the broadband emission within a 5 ns time window. [ABSTRACT FROM AUTHOR]