2,125 results on '"Amano, Hiroshi"'
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2. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers.
3. Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium
4. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
5. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
6. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing
7. Quasi-Ballistic Thermal Conduction in 6H-SiC
8. High-Gain Gated Lateral Power Bipolar Junction Transistor
9. Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
10. Limitation of simple np-n tunnel junction based LEDs grown by MOVPE
11. Non-polar true-lateral GaN power diodes on foreign substrates
12. Experimental Observation of High Intrinsic Thermal Conductivity of AlN
13. Inactivation characteristics of a 280 nm Deep-UV irradiation dose on aerosolized SARS-CoV-2
14. Anisotropic hole transport along [0001] and [112¯0] direction in p-doped (101¯0) GaN.
15. Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure
16. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
17. Improved performance of deep ultraviolet AlGaN-based light-emitting diode by reducing contact resistance of Al-based reflector
18. The Wound Dressing Influenced Effectiveness of Cryotherapy After Anterior Cruciate Ligament Reconstruction: Case–Control Study Comparing Gauze Versus Film Dressing
19. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
20. Laser slice thinning of GaN-on-GaN high electron mobility transistors
21. Miniature optical fiber curvature sensor via integration with GaN optoelectronics
22. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
23. Isolated peripheral longitudinal tears in the anterior–middle segment of medial meniscus among young soccer players: A case series
24. Study on Degradation of Deep‐Ultraviolet Laser Diode
25. WITHDRAWN: Observation of 2D-magnesium-intercalated gallium nitride superlattices
26. Association of Stability and Size of Unhealed Area With Failure After Internal Fixation for Osteochondritis Dissecans Lesions of the Knee: Radiological Evaluation Using Computed Tomography
27. Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts
28. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
29. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices
30. Recent advances in micro-pixel light emitting diode technology.
31. Metastable atomic-ordered configurations for Al1/2Ga1/2N predicted by Monte-Carlo method based on first-principles calculations.
32. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
33. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
34. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers
35. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode
36. Demonstration of AlGaN-on-AlN p-n Diodes with Dopant-free Distributed Polarization Doping
37. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
38. Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process
39. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
40. Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs
41. Droop and light extraction of InGaN-based red micro-light-emitting diodes
42. Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
43. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy.
44. Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides
45. Importance of functional performance and psychological readiness for return to preinjury level of sports 1 year after ACL reconstruction in competitive athletes
46. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing
47. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes
48. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
49. Nonpolar m-plane [formula omitted]N layers grown on m-plane sapphire by MOVPE
50. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
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