Search

We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed single photon source with single mode spontaneous emision coupling efficiencies in excess of beta~85 % and the potential to reach maximum emission rates >1 GHz., Comment: submitted on September 26, 2011

We experimentally probe the non-resonant feeding of photons into the optical mode of a two dimensional photonic crystal nanocavity from the discrete emission from a quantum dot. For a strongly coupled system of a single exciton and the cavity mode, we track the detuning-dependent photoluminescence intensity of the polariton peaks at different lattice temperatures. At low temperatures we observe a clear asymmetry in the emission intensity depending on whether the exciton is at higher or lower energy than the cavity mode. At high temperatures this asymmetry vanishes when the probabilities to emit or absorb a phonon become similar. For a different dot-cavity system where the cavity mode is detuned by \Delta E>5 meV to lower energy than the single exciton transitions emission from the mode remains correlated with the quantum dot as demonstrated unambiguously by cross-correlation photon counting experiments. By monitoring the temporal evolution of the photoluminescence spectrum, we show that feeding of photons into the mode occurs from multi-exciton transitions. We observe a clear anti-correlation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces towards the single exciton level whilst the intensity of the mode emission tracks the multi-exciton transitions.

We introduce an in-situ characterization method of resists used for e-beam lithography. The technique is based on the application of an atomic force microscope which is directly mounted below the cathode of an electron-beam lithography system. We demonstrate that patterns irradiated by the e-beam can be efficiently visualized and analyzed in surface topography directly after the e-beam exposure. This in-situ analysis takes place without any development or baking steps, and gives access to the chemical (or latent) image of the irradiated resist.

We present an experimental and theoretical study of a system consisting of two spatially separated self-assembled InGaAs quantum dots strongly coupled to a single optical nanocavity mode. Due to their different size and compositional profiles, the two quantum dots exhibit markedly different DC Stark shifts. This allows us to tune them into mutual resonance with each other and a photonic crystal nanocavity mode as a bias voltage is varied. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the entire set of emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots via the cavity mode, and the coupling between the two quantum dots when they are detuned from the cavity mode. We suggest that the resulting quantum V-system may be advantageous since dephasing due to incoherent losses from the cavity mode can be avoided.

We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. Unlike previous studies where the dot-cavity spectral detuning was varied by changing the lattice temperature, or by the adsorption of inert-gases at low temperatures, we demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by ~4 meV relative to the nanocavity mode before the emission quenches due to carrier tunneling escape. This range is much larger than the typical linewidth of the high-Q cavity modes (~0.10 meV) allowing us to explore and contrast regimes where the dots couple to the cavity or decay by spontaneous emission into the 2D photonic bandgap. In the weak coupling regime, we show that the dot spontaneous emission rate can be tuned using a gate voltage, with Purcell factors >=7. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the highest-Q cavities (Q>=12000). Vacuum Rabi splittings up to ~0.13 meV are observed, much larger than the linewidths of either the decoupled exciton or cavity mode. These observations represent a voltage switchable optical non-linearity at the single photon level, paving the way towards on-chip dot based nano-photonic devices that can be integrated with passive optical components.

We present an efficiently pumped single photon source based on single quantum dots (QD) embedded in photonic crystal nanocavities. Resonant excitation of a QD via a higher order cavity mode results in a 100$\times$ reduced optical power at the saturation onset of the photoluminescence, compared with excitation at the same frequency, after the cavity mode is detuned. Furthermore, we demonstrate that this excitation scheme leads to selective excitation of QDs coupled to the cavity by comparing photoluminescence and auto-correlation spectra for the same excitation wavelength with and without the cavity mode. This provides much cleaner conditions for single photon generation.

We study the optical emission from single semiconductor quantum dots coupled to the optical modes of photonic crystal nanocavities. For dots that are both spectrally and spatially coupled, auto-correlation measurements reveal efficient single photon generation, with a drastically reduced lifetime due to the Purcell-effect. However, the multi-photon emission probability is enhanced compared to the same QD transition when it is detuned from the cavity mode by controlled $N_2$-deposition. This indicates the presence of an emission background that is shown to be related to the dot using photon cross-correlation spectroscopy. Photon temporal correlations persist even for large spectral detunings beyond $\Delta\lambda\sim-10 nm$, excluding the intrinsic QD continuum and phonon mediated processes as being responsible for the cavity mode emission background. We propose a mechanism based on photon induced shake up processes in the charged quantum dots, enhanced by the optical cavity.

We demonstrate an electrically tunable two dimensional photonic crystal nanocavity containing InAs self assembled quantum dots. Photoluminescence and electroluminescence measurements are combined to probe the cavity mode structure and demonstrate a local electrical contact to the quantum dots. Measurements performed as a function of the electric field enable us to probe the capture, relaxation and recombination dynamics of photogenerated carriers inside the quantum dots emitting into a modified photonic environment. Furthermore, the two dimensional photonic crystal is probed by spatially dependent photocurrent spectroscopy indicating a 3.5x enhancement of the local radiative lifetime of the QDs inside the photonic crystal environment.

We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ~17 times enhancement of the average photon extraction efficiency, when compared to quantum dots in bulk GaAs. For quantum dots in the photonic crystal we measure directly an external quantum efficiency up to 26%, much higher than for quantum dots on the same sample without a tailored photonic environment. The results show that highly efficient quantum dot single photon sources can be realized, without the need for complex nanopositioning techniques.

We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a comparable factor. Our findings are quantitatively explained by a modal redistribution of spontaneous emission due to the modified local density of photonic states. The results suggest that quantum dots embedded within 2D-photonic crystals are suitable for practical single photon sources with high external efficiency.