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In this study, the focused ion beam (FIB) Ga+ irradiation damage on β-Ga2O3 Schottky diode structure under different ion energies were tested, and the effective recovery of diode characteristics after rapid thermal annealing (RTA) post-annealing were also studied. β-Ga2O3 based Schottky diodes have attracted increasing attention because of the prospects for use in next-generation high-power electronics. Focused ion beam (FIB) machining is one of the newest processing techniques, which is mainly used in semiconductor and chip manufacture and transmission electron microscopy (TEM) sample preparation. During FIB sample preparation, the energetic Ga ions are incident onto the sample to induce physical sputtering of the material, which in turn, modifies its chemical composition, crystallinity and electrical properties. It has been found in many studies that 20-30 nm amorphous layer can form on silicon after irradiation with 30 keV Ga ions. From our previous study, the FIB ion beam induced damages could cause significant degradation on diode on-resistance and turn-on voltage. Milling at lower energy has been used to reduce the electrical damage. However low energy milling is more time consuming and less precise. Short-time, high-temperature post-annealing treatments, such as RTA has been proved could remove the crystal damage. Thus, there is a great need to determine the maximal ion beam energy and post-annealing temperature for FIB without degrading diode characteristics. In this work, energies ranging from 2 keV to 30 keV were employed to mill off a part of Ga2O3 epi-layer and Schottky diodes were fabricated on milled surface. Forward IV characteristic shows less degradations with lower ion beam energies. For the diodes exposed to 2, 5, and 10 keV Ga+ ion beams exhibited significant recovery of diode on resistance and turn-on voltage after 300°C RTA annealing. For the diodes exposed to 30 keV Ga+ ion beams recovered significantly after 400 °C annealing. In conclusion, decreasing the FIB energy shows effective alleviations on the FIB damage, and post annealing treatment effectively recovered the damage from Ga+ implantation. This is the first time the thermal annealing treatment was performed for Ga2O3 Schottky diode recovering from FIB cutting, it is an effective and simple way to mitigate the degradation, especially for higher ion beam energies. This work could broaden the FIB’s usability and release tremendous potential as a specimen preparation and imaging tool in materials science applications. Figure 1

In this work, we demonstrate the rejuvenation of Ti/4H-SiC Schottky barrier diodes after forward current-induced degradation, at room temperature and in a few seconds, by exploiting the physics of high-energy electron interactions with defects. The diodes were intentionally degraded to a 42% decrease in forward current and a 9% increase in leakage current through accelerated electrical stressing. The key feature of our proposed rejuvenation process is very high current density electrical pulsing with low frequency and duty cycle to suppress any temperature rise. The primary stimulus is, therefore, the electron wind force, which is derived from the loss of the momentum of the high energy electrons upon collision with the defects. Such defect-specific or “just in location” mobilization of atoms allows a significant decrease in defect concentration, which is not possible with conventional thermal annealing that requires higher temperatures and longer times. We show evidence of rejuvenation with additional improvement in leakage current (16%) and forward current (38%) beyond the pristine condition. Transmission electron microscopy, geometric phase analysis, Raman spectroscopy, and energy dispersive x-ray-spectroscopy reveal the enhancement of defects and interfaces. The ultrafast and room temperature process has the potential for rejuvenating electronic devices operating in high power and harsh environmental conditions.

Two-dimensional transition metal carbides and nitrides, known as MXenes, are layered materials with unique functionalities which make them suitable for applications such as energy storage devices, supercapacitors, electromagnetic interference shielding, and wireless communications. Since they are wet-processed, MXenes need annealing to improve their electrical conductivity. The extent of annealing highly depends on temperature; however, higher temperatures can also impact the resulting phases and structure. In this study, we present a non-thermal annealing process utilizing an electron wind force (EWF) method in ambient conditions. This process is demonstrated on freestanding Ti3C2Tx films, where we show up to 70% decrease in resistivity at temperatures below 120 °C compared to conventional thermal annealing methods. MXene structures before and after annealing are analyzed using Raman spectroscopy and ex situ and in situ X-ray diffraction. Surface terminations and intra-flake defects modification in Ti3C2Tx layers after EWF annealing impart better electrical conductivity to MXene film than the non-annealed films.

Introduction Dynamic alignment of lower limb prostheses is subjective and time-consuming. Compensatory gait strategies caused by prosthesis misalignment can negatively affect lower limb amputees who cannot access a certified prosthetist for alignment adjustments. The objective of this study is to evaluate a novel six-degrees-of-freedom passive transtibial prosthetic adapter that self-aligns during various phases of gait. This self-aligning adapter may benefit service members and veterans stationed or living far from a clinical facility. Methods Four transtibial amputee subjects, aged 47 to 62 (mean: 55.75) years with mean weight of 163.6 lbs and mean K-level of 3.25, walked at self-selected speeds on a 10-m level walkway. Subjects walked with the self-aligning and a size- or weight-matched control adapter, assembled to a commercially available energy-storing-and-returning foot and their own socket, with 22-mm alignment perturbations in the anterior, posterior, medial, or lateral directions. Subjects were blinded to both adapter type and misalignment. Socket moments, spatiotemporal gait parameters, and subjective socket comfort were recorded. Results Preliminary results showed improvements in mean peak socket moments and step length differential with the self-aligning adapter across all alignments. Walking speed and prosthesis-side base of support showed little change in all configurations. Prosthesis-side stance duration and Functional Ambulation Profile Score increased with the self-aligning adapter in some alignments. Patient-reported socket comfort increased slightly with the self-aligning adapter across all misalignments. Conclusion Subjects maintained similar walking speeds and experienced greater gait symmetry and reduced sagittal plane peak moments with the self-aligning adapter when exposed to misalignments. These trends suggest a benefit to transtibial amputees from a reduction in secondary gait effects from prosthesis misalignments. Additionally, a wider range of acceptable prosthesis alignments may be possible with the self-aligning adapter. Subsequent trials are underway to evaluate the self-aligning adapter in real-world environments like walking on uneven terrains, stairs, ramps, and abrupt turns.

In this article, we investigate defect nucleation leading to device degradation in $\beta $ -Ga2O3 Schottky barrier diodes by operating them inside a transmission electron microscope. Such in situ approach allows simultaneous visualization and quantitative device characterization, not possible with the current art of postmortem microscopy. High current density and associated mechanical and thermal fields are shown to induce different types of crystal defects, from vacancy cluster and stacking fault to microcrack generation prior to failure. These structural defects can act as traps for carrier and cause device failure at high biasing voltage. Fundamental insights on nucleation of these defects and their evolution are important from materials reliability and device design perspectives.

In this study, we investigate a non-thermal annealing process for two-dimensional materials. Instead of high temperature, we exploit the electron wind force at near-room temperature conditions. It is an atomic-scale mechanical force that acts only in the defective regions, which is proposed to provide very high defect mobility. The process is demonstrated on back-gated WSe2 transistors. Electron wind force annealing was performed by passing current through the device channel while actively removing the Joule heating. We observe approximately one order of magnitude increase in the drain current, validating our hypothesis on the mobility imparted by the electron wind force to migrate and eliminate defects. To explain the atomistic mechanisms behind the room-temperature annealing, we perform molecular dynamics simulation. Computational evidence of defects annihilation and local metallic phase transformation supports the experimental results, which can enhance the device performance. Further developments of the proposed technique will potentially lead to time- and cost-effective post-processing of two-dimensional materials-based devices.

There are numerous applications for deep UV AlGaN Light-Emitting Diodes (LEDs) in virus inactivation, air and water purification, sterilization, bioagent detection and UV polymer curing. The long-term stability of these LEDs is also of interest for long-duration space missions such as the Laser Interferometer Space Antenna (LISA), the first gravitational wave detector in space. We review the literature on long-term aging of these devices as a function of drive current, temperature and dc versus pulsed operation. The LEDs typically show a gradual decline in output power (up to 50%) over extended operating times (>100 h) and the rate of decline is mainly driven by current and temperature. Experimentally, the degradation rate is dependent on the cube of drive current density and exponentially on temperature. The main mechanism for this decline appears to be creation/migration of point defects. Pre-screening by considering the ratio of band edge-to-midgap emission and LED ideality factor is effective in identifying populations of devices that show long lifetimes (>10,000 h), defined as output power falling to 70% of the initial value.

While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm−2, or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ, and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

The energy and beam current dependence of Ga+ focused ion beam milling damage on the sidewall of vertical rectifiers fabricated on n-type Ga2O3 was investigated with 5–30 kV ions and beam currents from 1.3–20 nA. The sidewall damage was introduced by etching a mesa along one edge of existing Ga2O3 rectifiers. We employed on-state resistance, forward and reverse leakage current, Schottky barrier height, and diode ideality factor from the vertical rectifiers as potential measures of the extent of the ion-induced sidewall damage. Rectifiers of different diameters were exposed to the ion beams and the “zero-area” parameters extracted by extrapolating to zero area and normalizing for milling depth. Forward currents degraded with exposure to any of our beam conductions, while reverse current was unaffected. On-state resistance was found to be most sensitive of the device parameters to Ga+ beam energy and current. Beam current was the most important parameter in creating sidewall damage. Use of subsequent lower beam energies and currents after an initial 30 kV mill sequence was able to reduce residual damage effects but not to the point of initial lower beam current exposures.

MXenes are atomically layered carbides and nitrides of transition metals that have potential for micro-devices applications in energy storage, conversion, and transport. This emerging family of materials is typically studied as nanosheets or ultra-thin films, for which the internal defects are mostly nanoscale flake-flake interface separation type. However, micro-devices applications would require thicker films, which exhibit very high density of microscale pores. Electrical conductivity of thicker MXenes is significantly lower than nanosheets, and the physics of defect size and density control are also different and less understood. Current art is to perform high temperature annealing to improve the electrical conductivity, which can structurally alter or degrade MXene. The key contribution of this study is a room-temperature annealing process that exploits the synergy between electrical pulses and compressive mechanical loading. Experimental results indicate over a 90% increase in electrical conductivity, which reflects a decrease in void size and density. In the absence of compressive loading, the same process resulted in a conductivity increase of approximately 75%. Analytical spectroscopy and microscopy indicated that the proposed multi-stimuli process kept the MXene composition intact while significantly decreasing the void size and density.

Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for the characterization of these concentrations is that they exist over sub-[Formula: see text]m length-scales, precluding their characterization by more traditional residual stress measurement techniques. Here, we demonstrate the use of synchrotron x-ray-based differential aperture x-ray microscopy (DAXM) as a viable, non-destructive means to characterize these stress and strain concentrations in a depth-resolved manner. DAXM is used to map two-dimensional strain fields between the source and the drain in a gallium nitride (GaN) layer within high electron mobility transistors (HEMTs) with sub-[Formula: see text]m spatial resolution. Strain fields at various positions in both pristine and irradiated HEMT specimens are presented in addition to a preliminary stress analysis to estimate the distribution of various stress components within the GaN layer. [Formula: see text]-irradiation is found to significantly reduce the lattice plane spacing in the GaN along the sample normal direction, which is attributed to radiation damage in transistor components bonded to the GaN during irradiation.

NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of −1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.

Strain localization in microelectronic devices commonly arises from device geometry, materials, and fabrication processing. In this study, we controllably relieve the local strain field of AlGaN/GaN HEMTs by milling micro-trenches underneath the channel and compare the device performance as a function of the relieved strain as well as radiation dosage. Micro-Raman results suggest that the trenches locally relax the strain in device layers, decreasing the 2DEG density and mobility. Intriguingly, such strain relaxation is shown to minimize the radiation damage, measured after 10 Mrads of 60Co-gamma exposure. For example, a 6-trench device showed only ∼8% and ∼6% decrease in saturation drain current and maximum transconductance, respectively, compared to corresponding values of ∼15% and ∼30% in a no-trench device. Negative and positive threshold voltage shifts are observed in 6-trench and no-trench devices, respectively, after gamma radiation. We hypothesize that the extent of gamma radiation damage depends on the strain level in the devices. Thus, even though milling a trench decreases 2DEG mobility, such decrease under gamma radiation is far less in a 6-trench device (∼1.5%) compared to a no-trench device (∼20%) with higher built-in strain.

Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.

Radiation damage in electronic devices is known to be influenced by physics, design, and materials system. Here, we report the effects of biasing state (such as ON and OFF) and pre-existing damage in GaN high electron mobility transistors exposed to γ radiation. Controlled and accelerated DC biasing was used to prestress the devices, which showed significant degradation in device characteristics compared to pristine devices under ON and OFF states after γ irradiation. The experiment is performed in situ for the ON-state to investigate transient effects during irradiation until the total dose reaches 10 Mrad. It shows that threshold voltage, maximum transconductance, and leakage current initially decrease with dosage but slowly converge to a steady value at higher doses. After 10 Mrad irradiation, the OFF-state device demonstrates larger RON and one order of magnitude increased leakage current compared to the ON-state irradiated device. The micro-Raman study also confirms that the ON-state operation shows more radiation hardness than OFF and prestressed devices. Prestressed devices generate the highest threshold voltage shift from −2.85 to −2.49 V and two orders of magnitude higher leakage current with decreased saturation current after irradiation. These findings indicate that high electric fields during stressing can generate defects by modifying strain distribution, and higher defect density can not only create more charges during irradiation but also accelerate the diffusion process from the ionizing track to the nearest collector and consequently degrade device performances.

This work characterizes the irradiation creep response of nanocrystalline zirconium by nanoscale quantitative tensile loading and ion irradiation experiments performed simultaneously in situ inside a transmission electron microscope. Microfabricated devices consisting of a freestanding Zr tensile specimen 100 nm in thickness on an elastic Si test frame were produced, and subsequent ex situ ion irradiations were performed on devices with 1.4 MeV Zr ions to a nominal damage level of 0.26 displacement per atom. Subsequent in situ creep experiments performed with and without 1.4 MeV Zr ion irradiation at different applied tensile loads revealed that creep rates were enhanced by the simultaneous radiation damage. This coupled in situ nanomechanical and irradiation methodology enables rapid quantification of both the irradiation creep compliance and associated microstructural evolution.

Grain growth in polycrystalline materials is commonly achieved with thermal annealing. Here, we explore an alternate athermal route through a synergy of electrical current and tensile strain at or near room temperature. Our experimental approach involves passing electrical current in 100 nm thick freestanding palladium films with about 5 nm initial grain size. The resulting Joule heating increases the temperature up to 470 K (homologous temperature of 0.25) at the middle section of the specimen. The massive heatsinks at the two ends of the specimen constrain them at the room temperature. At current density of 7 × 105 A/cm2, in-situ transmission electron microscopy shows more than two orders of magnitude grain growth in the high temperature regions and little growth at the room temperature regions. However, application of elastic strain (about 0.1%) dramatically increased the grain size to about 100 nm in a few seconds at the room temperature regions. Our finding suggests that the synergy of elastic strain energy and electrical current density may achieve grain growth in metallic materials even at the room temperature. Molecular dynamics simulation of this phenomenon reveals that the externally applied strain is localized at the grain boundaries in nanocrystalline metals, which promotes the effects of electron wind force on the grain boundary atoms. We conclude that a synergy of two or more stimuli can achieve grain growth at room or even lower temperatures.

Conventional annealing is a slow, high temperature process that involves heating atoms uniformly, i.e., in both defective and crystalline regions. This study explores an electrical alternative for energy efficiency, where moderate current density is used to generate electron wind force that produces the same outcome as the thermal annealing process. We demonstrate this on a zirconium alloy using in-situ electron back scattered diffraction (EBSD) inside a scanning electron microscope (SEM) and juxtaposing the results with that from thermal annealing. Contrary to common belief that resistive heating is the dominant factor, we show that 5 × 104 A/cm2 current density can anneal the material in less than 15 min at only 135 °C. The resulting microstructure is essentially the same as that obtained with 600 °C processing for 360 min. We propose that unlike temperature, the electron wind force specifically targets the defective regions, which leads to unprecedented time and energy efficiency. This hypothesis was investigated with molecular dynamics simulation that implements mechanical equivalent of electron wind force to provide the atomistic insights on defect annihilation and grain growth.

Performance and reliability of microelectronic devices are governed by the mechanical strain. Typically, strain engineering implies uniformly distributed strain. However, we offer a different perspective by hypothesizing that very small but localized strain (or stress) may have significant impact on the overall behavior of AlGaN/GaN high electron mobility transistors (HEMTs). Micro to nanoscale confined mechanical stress fields may develop unavoidably and are ignored because their spatial average is insignificant. We exploit high resolution techniques such as transmission electron microscopy (TEM) and micro-Raman spectroscopy to spatially resolve the stress field in GaN HEMTs to demonstrate the stress localization and then radiation effects. To study stress localization effects on the global electrical characteristics, we introduced a highly localized strain relief by milling a 20×30 μm2 micro trench about 70 μm deep on the backside of an 800×840 μm2 size HEMT die. The resulting local relaxation of in-plane residual strain was mapped using micro-Raman technique. Our results show that a decrease of only 0.02% strain can decrease the overall output saturation current up to ~20 %. The drop of output current is attributed to reduced two-dimensional electron gas (2DEG) sheet carrier density and electron mobility due to the strain relief in the device layers. However, the mechanistic process of strain relief also causes defect generation at the interfaces, which increases leakage current. Our technique for localized strain re-distribution could be an effective tool to surrogate the influence of inherent localized strain build-up across the channel of electronic devices. To study radiation effects, we exposed the HEMTs to gamma rays (up to 10 megaRads dose at 180 kiloRads per hour). We report the thermal and mechanical responses in terms of the changes in lattice strain and temperature, which were simultaneously characterized by changes in phonon frequency of E2 (high) and A1 (LO) from on- state and unpowered/pinched off reference states. Lower doses of radiation improved the electrical properties, however degradation initiated at about 1 megaRads. We observed about 16% decrease in saturation current and 6% decrease in transconductance at the highest dose. However, leakage current increase by 3 orders of magnitude was the most notable radiation effect. We observed temperature increase by 40% and mechanical stress increase by a factor of three at dose of 10 megaRads compared to the pristine devices. Spatial mapping of mechanical stress along the channel identifies the gate region as mechanically affected area, whereas the thermal degradation was mostly uniform. Transmission electron microscopy showed contrast changes reflecting high vacancy concentration in the gate region. These findings suggest that localized stress (mechanical hotspots) may increases vulnerability to radiation damage by accommodating higher concentration of defects that promote leakage current. Finally, we present experimental results on a novel concept of electron wind force driven room temperature annealing of GaN and SiC devices. This technique was applied on Gamma irradiated HEMT and SiC diodes. We demonstrate full recovery of the HEMTs irradiated to 10 mega-Rads gamma radiation. About 200% performance improvement was recorded for the SiC diodes. Our hypothesis is that mechanical stress waves are instrumental in eliminating interfacial defects.

We present a review of the published experimental and simulation radiation damage results in Ga2O3. All of the polytypes of Ga2O3 are expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, this is not enough to explain the orders of magnitude difference of the relative resistance to radiation damage of these materials compared to GaAs and dynamic annealing of defects is much more effective in Ga2O3. It is important to examine the effect of all types of radiation, given that Ga2O3 devices will potentially be deployed both in space and terrestrial applications. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (VGa), and antisites (GaO). One of the most important parameters to establish is the carrier removal rate for each type of radiation, since this directly impacts the current in devices such as transistors or rectifiers. When compared to the displacement damage predicted by the Stopping and Range of Ions in Matter(SRIM) code, the carrier removal rates are generally much lower and take into account the electrical nature of the defects created. With few experimental or simulation studies on single event effects (SEE) in Ga2O3, it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have analyzed the transient response of β-Ga2O3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage. Such biased rings help in the removal of the charge deposited by the ion strike.

Focused Ga+ ion milling of lightly Si-doped, n-type Ga2O3 was performed with 2–30 kV ions at normal incidence and beam currents that were a function of beam voltage, 65 nA for 30 kV, 26 nA for 10 kV, 13 nA for 5 kV, and 7.1 nA for 2 kV, to keep the milling depth constant at 100 nm. Approximate milling rates were 15, 6, 2.75, and 1.5 μm3/s for 30, 10, 5, and 2 kV, respectively. The electrical effects of the ion damage were characterized by Schottky barrier height and diode ideality factor on vertical rectifier structures comprising 10 μm epitaxial n-Ga2O3 on n+ Ga2O3 substrates, while the structural damage was imaged by transmission electron microscopy. The reverse bias leakage was largely unaffected even by milling at 30 kV beam energy, while the forward current-voltage characteristics showed significant deterioration at 5 kV, with an increase in the ideality factor from 1.25 to 2.25. The I–V characteristics no longer showed rectification for the 30 kV condition. Subsequent annealing up to 400 °C produced substantial recovery of the I–V characteristics for all beam energies and was sufficient to restore the initial ideality factor completely for beam energies up to 5 kV. Even the 30 kV-exposed rectifiers showed a recovery of the ideality factor to 1.8. The surface morphology of the ion-milled Ga2O3 was smooth even at 30 kV ion energy, with no evidence for preferential sputtering of the oxygen. The surface region was not amorphized by extended ion milling (35 min) at 5 kV with the samples held at 25 °C, as determined by electron diffraction patterns, and significant recovery of the lattice order was observed after annealing at 400 °C.

As electronic systems become larger and more complex, detection of the most vulnerable regions (MVR) to radiation exposure becomes more difficult and time consuming. We present a heuristic approach where the mechanical and thermal aspects of devices are exploited to quickly identify MVRs. Our approach involves the topological mapping of two device conditions. The first condition identifies regions with the highest mechanical strain or density of defects and interfaces via thermal wave probing and phase analysis. The second condition identifies regions with high electrical field. It is hypothesized that the region with the highest thermal wave penetration resistance and electrical field will exhibit the highest sensitivity to incoming radiation for single events and potentially, total ionizing dose. Our approach implements a simplistic design that improves analysis time by ∼2–3 orders of magnitude over current radiation sensitivity mapping methods. The design is demonstrated on the well-studied operational amplifier LM124, which shows agreement with the literature in identifying sensitive transistors–QR1, Q9, and Q18–with relatively high phase percentile values (>70%) and ΔT percentiles (>50%), satisfying conditions for elevated radiation susceptibility. This is followed by experimental results on a static random access memory (HM-6504) and a Xilinx Artix-7 35 T system on a chip.

Radiation damage mitigation in electronics remains a challenge because the only established technique, thermal annealing, does not guarantee a favorable outcome. In this study, a non-thermal annealing technique is presented, where electron momentum from very short duration and high current density pulses is used to target and mobilize the defects. The technique is demonstrated on 60Co gamma irradiated (5 × 106 rad dose and 180 × 103 rad h−1 dose rate) GaN high electron mobility transistors. The saturation current and maximum transconductance were fully and the threshold voltage was partially recovered at 30 °C or less. In comparison, thermal annealing at 300 °C mostly worsened the post-irradiation characteristics. Raman spectroscopy showed an increase in defects that reduce the 2-dimensional electron gas (2DEG) concentration and increase the carrier scattering. Since the electron momentum force is not applicable to the polymeric surface passivation, the proposed technique could not recover the gate leakage current, but performed better than thermal annealing. The findings of this study may benefit the mitigation of some forms of radiation damage in electronics that are difficult to achieve with thermal annealing.

There are continuing rapid developments in vertical geometry Ga2O3 for high voltage switching applications. Ga2O3 is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping and the availability of large diameter, relatively inexpensive substrates. These include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are already cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (vertical devices), and heteroepitaxial GaN (lateral devices) enjoy tremendous advantages in terms of process maturity, an advantage that is especially true for Si, where the ability to precisely process the material has resulted in devices such as super-junctions that surpass the unipolar “limit”. Continued development of low defect substrates, optimized epi growth and surface treatments and improved device design and processing methods for Ga2O3 are still required to push the experimental results closer to their theoretical values. Even 3 μm epi layers with doping concentration of 1016 cm-3 should have a theoretical breakdown voltage of ~1800V. The actual experimental value of VB is currently well below the theoretical predictions. Thermal management is a key issue in Ga2O3 power devices for practical high current devices and initial studies have appeared on both the experimental and theoretical fronts. We summarize progress in edge termination design, temperature measurement using thermoreflectance-based thermography to measure the thermal rise and decay of the active diodes, failure under forward bias and development of large current (up to 130A) arrays.

We report thermal and mechanical responses accompanying electrical characteristics of depletion mode GaN high electron mobility transistors exposed to gamma radiation up to 107 rads. Changes in the lattice strain and temperature were simultaneously characterized by changes in the phonon frequency of E2 (high) and A1 (LO) from the on-state and unpowered/pinched off reference states. Lower doses of radiation improved electrical properties; however, degradation initiated at about 106 rads. We observed about 16% decrease in the saturation current and 6% decrease in the transconductance at the highest dose. However, a leakage current increase by three orders of magnitude was the most notable radiation effect. We observed temperature increase by 40% and mechanical stress increase by a factor of three at a dose of 107 rads compared to the pristine devices. Spatial mapping of mechanical stress along the channel identifies the gate region as a mechanically affected area, whereas the thermal degradation was mostly uniform. Transmission electron microscopy showed contrast changes reflecting a high vacancy concentration in the gate region. These findings suggest that localized stress (mechanical hotspots) may increase vulnerability to radiation damage by accommodating higher concentration of defects that promote the leakage current.

Strength and ductility are mutually exclusive in metallic materials. To break this relationship, we start with nanocrystalline Zirconium with very high strength and low ductility. We then ion irradiate the specimens to introduce vacancies, which promote diffusional plasticity without reducing strength. Mechanical tests inside the Transmission Electron Microscope reveal about 300% increase in plastic strain after self ion-irradiation. Molecular dynamics simulation showed that 4.3% increase in vacancies near the grain boundaries can result in about 60% increase in plastic strain. Both experimental and computational results support our hypothesis that vacancies may enhance plasticity through higher atomic diffusivity at the grain boundaries.

X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.

Conventional residual stress mitigation techniques involve long processing times at high temperatures and/or mechanical loading to build plastic compressive stress below the surface. In this study, we present a new residual stress mitigation methodology at near ambient temperature in less than a minute. This is demonstrated on a welded joint of 316 L stainless steel, where low-frequency DC current pulses are shown to recrystallize the specimen and reduce residual stress. We present experimental evidence of ∼30 % reduction in electrical resistance, which corresponded to ∼40 % decrease in both microhardness and residual stress, measured by the X-ray diffraction tests. Similar improvement was qualitatively observed through significant decrease in the low-angle grain boundary density, which also reflects the decrease of the residual stress. The technique can be applied to relieve residual stress in conditions difficult for the conventional processing, such as locations with extreme space constraints or objects that cannot be heat treated.