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The accurate first-principles description of strongly-correlated materials is an important and challenging problem in condensed matter physics. Ab initio downfolding has emerged as a way of deriving accurate many-body Hamiltonians including strong correlations, representing a subspace of interest of a material, using density functional theory calculations as a starting point. However, the solution of these material-specific models can scale exponentially on classical computers, constituting a challenge. Here we propose that utilizing quantum computers for obtaining the properties of downfolded Hamiltonians yields an accurate description of the ground state properties of strongly-correlated systems, while circumventing the exponential scaling problem. We demonstrate this for diverse strongly-correlated materials by combining ab initio downfolding and variational quantum eigensolvers, correctly predicting the antiferromagnetic state of one-dimensional cuprate $\text{Ca}_2\text{CuO}_3$, the excitonic ground state of monolayer $\text{WTe}_2$, and the charge-ordered state of correlated metal $\text{SrVO}_3$. By utilizing a classical tensor network implementation of variational quantum eigensolvers we are able to simulate large models with up to $54$ qubits and encompassing up to four bands in the correlated subspace, which is indicative of the complexity that our framework can address.

Atomically thin semiconductors, encompassing both 2D materials and quantum wells, exhibit a pronounced enhancement of excitonic effects due to geometric confinement. Consequently, these materials have become foundational platforms for the exploration and utilization of excitons. Recent ab initio studies have demonstrated that phonons can substantially screen electron-hole interactions in bulk semiconductors and strongly modify the properties of excitons. While excitonic properties of atomically thin semiconductors have been the subject of extensive theoretical investigations, the role of phonon screening on excitons in atomically thin structures remains unexplored. In this work, we demonstrate via ab initio GW-Bethe-Salpeter equation calculations that phonon screening can have a significant impact on optical excitations in atomically thin semiconductors. We further show that the degree of phonon screening can be tuned by structural engineering. We focus on atomically thin GaN quantum wells embedded in AlN and identify specific phonons in the surrounding material, AlN, that dramatically alter the lowest-lying exciton in monolayer GaN via screening. Our studies provide new intuition beyond standard models into the interplay among structural properties, phonon characteristics, and exciton properties in atomically thin semiconductors, and have implications for future experiments.

Simulating the Hubbard model is of great interest to a wide range of applications within condensed matter physics, however its solution on classical computers remains challenging in dimensions larger than one. The relative simplicity of this model, embodied by the sparseness of the Hamiltonian matrix, allows for its efficient implementation on quantum computers, and for its approximate solution using variational algorithms such as the variational quantum eigensolver. While these algorithms have been shown to reproduce the qualitative features of the Hubbard model, their quantitative accuracy in terms of producing true ground state energies and other properties, and the dependence of this accuracy on the system size and interaction strength, the choice of variational ansatz, and the degree of spatial inhomogeneity in the model, remains unknown. Here we present a rigorous classical benchmarking study, demonstrating the potential impact of these factors on the accuracy of the variational solution of the Hubbard model on quantum hardware. We find that even when using the most accurate wavefunction ans\"{a}tze for the Hubbard model, the error in its ground state energy and wavefunction plateaus for larger lattices, while stronger electronic correlations magnify this issue. Concurrently, spatially inhomogeneous parameters and the presence of off-site Coulomb interactions only have a small effect on the accuracy of the computed ground state energies. Our study highlights the capabilities and limitations of current approaches for solving the Hubbard model on quantum hardware, and we discuss potential future avenues of research.

Understanding the processes governing the dissociation of excitons to free charge carriers in semiconductors and insulators is of central importance for photovoltaic applications. Dyson's $\mathcal{S}$-matrix formalism provides a framework for computing scattering rates between quasiparticle states derived from the same underlying Hamiltonian, often reducing to familiar Fermi's golden rule like expressions at first order. By presenting a rigorous formalism for multi-channel scattering, we extend this approach to describe scattering between composite quasiparticles and in particular, the process of exciton dissociation mediated by the electron-phonon interaction. Subsequently, we derive rigorous expressions for the exciton dissociation rate, a key quantity of interest in optoelectronic materials, which enforce correct energy conservation and may be readily used in ab initio calculations. We apply our formalism to a three-dimensional model system to compare temperature-dependent exciton rates obtained for different scattering channels.

Electron-phonon interactions are of great importance to a variety of physical phenomena, and their accurate description is an important goal for first-principles calculations. Isolated examples of materials and molecular systems have emerged where electron-phonon coupling is enhanced over density functional theory (DFT) when using the Green's-function-based ab initio GW method, which provides a more accurate description of electronic correlations. It is however unclear how general this enhancement is, and how employing high-end quantum chemistry methods, which further improve the description of electronic correlations, might further alter electron-phonon interactions over GW or DFT. Here, we address these questions by computing the renormalization of the highest occupied molecular orbital energies of Thiel's set of organic molecules by harmonic vibrations using DFT, GW and equation-of-motion coupled-cluster calculations. We find that GW can increase the magnitude of the electron-phonon coupling across this set of molecules by an average factor of 1.1-1.8 compared to DFT, while equation-of-motion coupled-cluster leads to an increase of 1.4-2. The electron-phonon coupling predicted with the ab initio GW method is generally in much closer agreement to coupled cluster values compared to DFT, establishing GW as an accurate way of computing electron-phonon phenomena in molecules and beyond at a much lower computational cost than higher-end quantum chemistry techniques.

The properties of excitons, or correlated electron-hole pairs, are of paramount importance to optoelectronic applications of materials. A central component of exciton physics is the electron-hole interaction, which is commonly treated as screened solely by electrons within a material. However, nuclear motion can screen this Coulomb interaction as well, with several recent studies developing model approaches for approximating the phonon screening to the properties of excitons. While these model approaches tend to improve agreement with experiment for exciton properties, they rely on several approximations that restrict their applicability to a wide range of materials, and thus far they have neglected the effect of finite temperatures. Here, we develop a fully first-principles, parameter-free approach to compute the temperature-dependent effects of phonon screening within the ab initio GW-Bethe Salpeter equation framework. We recover previously proposed models of phonon screening as well-defined limits of our general framework, and discuss their validity by comparing them against our first-principles results. We develop an efficient computational workflow and apply it to a diverse set of semiconductors, specifically AlN, CdS, GaN, MgO and SrTiO3. We demonstrate under different physical scenarios how excitons may be screened by multiple polar optical or acoustic phonons, how their binding energies can exhibit strong temperature dependence, and the ultrafast timescales on which they dissociate into free electron-hole pairs.

The spatial extent of excitons in molecular systems underpins their photophysics and utility for optoelectronic applications. Phonons are reported to lead to both exciton localization and delocalization. However, a microscopic understanding of phonon-induced (de)localization is lacking, in particular how localized states form, the role of specific vibrations, and the relative importance of quantum and thermal nuclear fluctuations. Here we present a first-principles study of these phenomena in solid pentacene, a prototypical molecular crystal, capturing the formation of bound excitons, exciton-phonon coupling to all orders, and phonon anharmonicity, using density functional theory, the \emph{ab initio} $GW$-Bethe-Salpeter equation approach, finite difference, and path integral techniques. We find that for pentacene zero-point nuclear motion causes uniformly strong localization, with thermal motion providing additional localization only for Wannier-Mott-like excitons. Anharmonic effects drive temperature-dependent localization, and while such effects prevent the emergence of highly delocalized excitons, we explore the conditions under which these might be realized.

Thermally-activated delayed fluorescence (TADF) enables organic semiconductors with charge transfer (CT)-type excitons to convert dark triplet states into bright singlets via a reverse intersystem crossing (rISC) process. Here, we consider the role of the dielectric environment in a range of TADF materials with varying changes in dipole moment upon optical excitation. In a dipolar reference emitter, TXO-TPA, environmental reorganisation after excitation in both solution and doped films triggers the formation of the full CT product state. This lowers the singlet excitation energy by 0.3 eV and minimises the singlet-triplet energy gap ({\Delta}EST). Using impulsive Raman measurements, we observe the emergence of two (reactant-inactive) modes at 412 and 813 cm-1 as a vibrational fingerprint of the CT product. In contrast, the dielectric environment plays a smaller role in the electronic excitations of a less dipolar material, 4CzIPN. Quantum-chemical calculations corroborate the appearance of these new product modes in TXO-TPA and show that the dynamic environment fluctuations are large compared to {\Delta}EST. The analysis of the energy-time trajectories and the corresponding free energy functions reveals that the dielectric environment significantly reduces the activation energy for rISC, thus increasing the rISC rate by up to three orders of magnitude when compared to a vacuum environment., Comment: 67 pages, 7 main-text figures

The energies of molecular excited states arise as solutions to the electronic Schr\"{o}dinger equation and are often compared to experiment. At the same time, nuclear quantum motion is known to be important and to induce a red-shift of excited state energies. However, it is thus far unclear whether incorporating nuclear quantum motion in molecular excited state calculations leads to a systematic improvement of their predictive accuracy, making further investigation necessary. Here we present such an investigation by employing two first-principles methods for capturing the effect of quantum fluctuations on excited state energies, which we apply to the Thiel set of organic molecules. We show that accounting for zero-point motion leads to much improved agreement with experiment, compared to `static' calculations which only account for electronic effects, and the magnitude of the red-shift can become as large as 1.36 eV. Moreover, we show that the effect of nuclear quantum motion on excited state energies largely depends on the molecular size, with smaller molecules exhibiting larger red-shifts. Our methodology also makes it possible to analyze the contribution of individual vibrational normal modes to the red-shift of excited state energies, and in several molecules we identify a limited number of modes dominating this effect. Overall, our study provides a foundation for systematically quantifying the shift of excited state energies due to nuclear quantum motion, and for understanding this effect at a microscopic level.

Many optoelectronic devices based on organic materials require rapid and long-range singlet exciton transport. Key factors that control the transport of singlet excitons includes the electronic structure of the material, disorder and exciton-phonon coupling. An important parameter whose influence on exciton transport has not been explored is the symmetry of the singlet electronic state (S1). Here, we employ femtosecond transient absorption spectroscopy and microscopy to reveal the relationship between the symmetry of S1 and exciton transport in highly aligned, near-disorder free, one-dimensional conjugated polymers based on polydiacetylene., Comment: 4 figures

Exciton-polaritons in organic materials are hybrid states that result from the strong interaction of photons and the bound excitons that these materials host. Organic polaritons hold great interest for optoelectronic applications, however progress towards this end has been impeded by the lack of a first principles approach that quantifies light-matter interactions in these systems, and which would allow the formulation of molecular design rules. Here we develop such a first principles approach, quantifying light-matter interactions. We exemplify our approach by studying variants of the conjugated polymer polydiacetylene, and we show that a large polymer conjugation length is critical towards strong exciton-photon coupling, hence underlying the importance of pure structures without static disorder. By comparing to our experimental reflectivity measurements, we show that the coupling of excitons to vibrations, manifested by phonon side bands in the absorption, has a strong impact on the magnitude of light-matter coupling over a range of frequencies. Our approach opens the way towards a deeper understanding of polaritons in organic materials, and we highlight that a quantitatively accurate calculation of the exciton-photon interaction would require accounting for all sources of disorder self-consistently.

Organic semiconductors exhibit properties of individual molecules and extended crystals simultaneously. The strongly bound excitons they host are typically described in the molecular limit, but excitons can delocalize over many molecules, raising the question of how important the extended crystalline nature is. Using accurate Green's function based methods for the electronic structure and non-perturbative finite difference methods for exciton-vibration coupling, we describe exciton interactions with molecular and crystal degrees of freedom concurrently. We find that the degree of exciton delocalization controls these interactions, with thermally activated crystal phonons predominantly coupling to delocalized states, and molecular quantum fluctuations predominantly coupling to localized states. Based on this picture, we quantitatively predict and interpret the temperature and pressure dependence of excitonic peaks in the acene series of organic semiconductors, which we confirm experimentally, and we develop a simple experimental protocol for probing exciton delocalization. Overall, we provide a unified picture of exciton delocalization and vibrational effects in organic semiconductors, reconciling the complementary views of finite molecular clusters and periodic molecular solids.