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We present single event effects (SEE) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM.

Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).

We present low-cost and effective methods and results for high levels of Total Ionizing Dose testing performed on the Xilinx Kintex UltraScale (20nm) Field-Programmable Gate Array evaluation board using 60Co and 2 MeV electron sources.

This paper reports and analyzes recent single event effects (SEE) and total ionizing dose (TID) test results for the Analog Devices RH3845 synchronous current mode step-down controller. This device has been tested and evaluated for use in a harsh space radiation environment.

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We present SEE test results for the Cobham SpaceWire transceiver after dosing the device to 300 krad(Si). We performed SEU characterization with variable data rates and patterns. Events resembling SEFIs were also observed and recorded.

This paper reports recent single-event latchup results for a variety of microelectronic devices that include Wireless and Powerline Network Communication devices. The data were collected to evaluate these devices for possible use in NASA Mars missions.

This paper presents recent heavy ion single-event effects test results for commercial off the shelf devices. Data was taken in CY17 for device evaluation for use in a Class D NASA interplanetary mission payload.

Single-event destructive behavior and latchup has been observed in two separate radiation hardened switching regulators. We discuss the test conditions and observed results.

This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.

This paper reports proton damage in LED and phototransistor of the Micropac 66179 optocoupler. Analysis of the test data reveals interesting information, such as the dependence of the transistor gain on irradiation and photocurrent.

Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with I(sub F) = 10 mA at 1 x 10(exp 12) 1-MeV n/sq.cm fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 10(exp 12) 1-MeV n/sq.cm fluence in Silicon, respectively.

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

This paper reports heavy ion, proton, and laser induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA spacecrafts. The compendium covers devices tested within the years of 2010 through 2012.

The Elpida EDS5104(08)ABTA 512Mb SDRAM is examined for programmatic impact of SEE. Use cases for the devices including EDAC and mode register reload are examined. Results indicate some SEE mitigation methods require careful application to achieve system-level benefits, while some event types are essentially mitigated by the application use. In the studied devices MBE and SEFI are identified and investigated as mechanisms requiring special consideration.

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

We present initial results for the thin epitaxial Xilinx Virtex-4 Fie ld Programmable Gate Array (FPGA), and compare to previous results ob tained for the Virtex-II and Virtex-II Pro. The data presented was a cquired through a consortium based effort with the common goal of pr oviding the space community with data and mitigation methods for the use of Xilinx FPGAs in space.

Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

This work describes radiation testing of Actel's ProASIC Plus and Altera's Stratix-II FPGAs. The Actel Device Under Test (DUT) was a ProASIC Plus APA300-PQ208 nonvolatile, field reprogrammable device which is based on a 0.22micron flash-based LVCMOS technology. Limited investigation has taken place into flash based FPGA technologies, therefore this test served as a preliminary reference point for various SEE behaviors. The Altera DUT was a Stratix-II EP2S60F1020C4. Single Event Upset (SEU) and Single Event Latchup (SEL) were the focus of these studies. For the Actel, a latchup test was done at an effective LET of 75.0 MeV-sq cm/mg at room temperature, and no latchup was detected when irradiated to a total fluence of 1 x 10(exp 7) particles/sq cm. The Altera part was shown to latchup at room temperature.