1. X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure
- Author
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Cristina de Freitas Bueno, Eric Mossang, Aline Y. Ramos, Luis Vicente de Andrade Scalvi, Aude Bailly, Universidade Estadual Paulista (Unesp), Univ Grenoble Alpes, Universidade Estadual Paulista Júlio de Mesquita Filho = São Paulo State University (UNESP), Matériaux, Rayonnements, Structure (MRS), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Surfaces, Interfaces et Nanostructures (SIN), and X'Press (X'Press)
- Subjects
Materials science ,Photoluminescence ,Band gap ,General Chemical Engineering ,Analytical chemistry ,General Physics and Astronomy ,02 engineering and technology ,01 natural sciences ,Gallium arsenide ,0103 physical sciences ,General Materials Science ,Thin film ,General Environmental Science ,010302 applied physics ,X-ray absorption spectroscopy ,Extended X-ray absorption fine structure ,Electro-optical properties ,General Engineering ,Heterojunction ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,XANES ,Tin dioxide ,13. Climate action ,Heterostructure ,General Earth and Planetary Sciences ,0210 nano-technology ,Luminescence - Abstract
Made available in DSpace on 2020-12-10T20:10:39Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-08-28 Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) data are used for investigating heterostructure samples of GaAs/SnO2. XANES data are used for analyzing the local organization around Eu in the heterostructure formed by GaAs and Eu-doped SnO2. The differences between the XANES data for these samples and data obtained for Eu-doped SnO2 thin films, deposited on glass substrate, are assumed as responsible for the differences in the photoluminescence (PL) spectra concerning the Eu3+ emission, since films deposited on glass substrate do not present Eu3+ PL transitions until the annealing temperature is rather high. Eu3+ emission is explored using two different excitation sources: 350 nm from a Kr+ laser (above SnO2 energy bandgap) and 488 nm from an Ar+ laser (below SnO2 bandgap energy). The existence of more organized regions around the Eu3+ site observed for the heterostructure surface may be associated with the Eu3+ luminescent emission. The main and secondary features in the XANES show that there are differences in the average local Eu environment for the SnO2:Eu isolated thin films and heterostructures, being more organized in the latter. Electrical characterization evidences that the portion of the resistivity reduction that corresponds to photo-ionized intrabandgap states is responsible for the persistent photoconductivity phenomenon in the heterostructures. Sao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil Univ Grenoble Alpes, Inst Neel, CNRS, F-38042 Grenoble, France Sao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil CAPES: 88881.131882/2016-01 CAPES: 88887.375016/2019-00-CAPES-PRINT
- Published
- 2020