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7. Origin of defects responsible for charge transport in resistive random access memory based on hafnia

Author

Islamov, Damir R., Perevalov, T. V., Gritsenkov, V. A., Aliev, V. Sh., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V., Cheng, C. H., and Chin, Albert

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile flash memory, is resistive random access memory (ReRAM). ReRAM is based on switching back and forth from a high-resistance state (HRS) to a low-resistance state (LRS). ReRAM cells are small, allowing for the creation of memory on the scale of terabits. One of the most promising materials for use as the active medium in resistive memory is hafnia (HfO$_2$). However, an unresolved physics is the nature of defects and traps that are responsible for the charge transport in HRS state of resistive memory. In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the HRS charge transport in resistive memory elements based on HfO$_2$. We also demonstrated that LRS transport occurs through a mechanism described according to percolation theory. Based on the model of multiphonon tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal excitation energy of the traps in hafnia was determined based on the excitation spectrum and luminescence of the oxygen vacancies. The findings of this study demonstrate that in resistive memory elements using hafnia, the oxygen vacancies in hafnia play a key role in creating defects in HRS charge transport., Comment: 13 pages, 6 figures. The manuscript to be considered for publication in Nature Physics

Published
2013

17. Resistive Switching Effect in TaN/HfOx/Ni Memristors with a Filament Formed under Local Electron-Beam Crystallization.

Author

Voronkovskii, V. A., Gerasimova, A. K., and Aliev, V. Sh.

Subjects
MEMRISTORS, CURRENT-voltage curves, CRYSTALLIZATION, FIBERS, SPACE charge, ELECTRON beams
Abstract

The influence of an intense electron beam on a nonstoichiometric oxide HfOx () layer of a TaN/HfOx/Ni memristor on its electrophysical properties is studied. It is found that the crystalline h-Hf, m‑HfO2, o-HfO2, and t-HfO2 phases are formed in the HfOx film under this impact. It is established that memristors demonstrate resistive switching at certain electron fluence values. At the same time, such memristors have resistive switching voltages several times lower than those of unirradiated memristors. In addition, they exhibit a multiple decrease in the spread of resistive switching voltages, as well as resistances in low- and high-resistance states. The current–voltage curves of the obtained memristors indicate that the charge transport in them is described by the space-charge-limited current mechanism. [ABSTRACT FROM AUTHOR]

Published
2023
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24. Concordance between the tumor mutational status and circulating tumor DNA in patients with colorectal cancer

Author

Polyanskaya, E. M., primary, Fedyanin, M. Yu., additional, Boyarskikh, U. A., additional, Kechin, A. A., additional, Moroz, E. A., additional, Polyakov, A. N., additional, Kudashkin, N. E., additional, Podluzhniy, D. V., additional, Khrapov, E. A., additional, Oskorobin, I. P., additional, Shamovskaya, D. V., additional, Aliev, V. A., additional, Mamedli, Z. Z., additional, Tryakin, A. A., additional, Filipenko, M. L., additional, and Tjulandin, S. A., additional

Published
2022
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