109 results on '"Alian, Alireza"'
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2. Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers.
3. Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity
4. A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs
5. Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures.
6. RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si
7. (Digital Presentation) Substrate Effects in GaN-on-Si Hemt Technology for RF FEM Applications
8. Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
9. Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier
10. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
11. Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures
12. Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation
13. ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
14. Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics
15. ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
16. CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
17. Bandlike and localized states of extended defects in n-type In0.53Ga0.47As.
18. (Plenary) The Revival of Compound Semiconductors and How They Will Change the World in a 5G/6G Era
19. On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications
20. Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
21. (Invited) Advanced Transistors for High Frequency Applications
22. Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
23. Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices
24. Molecular Beam Epitaxial Growth of 6.1 Semiconductors Heterostructures for Advanced p-type Quantum Well Devices
25. Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates
26. Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below <tex>$\mathrm{V}_{\text{DD}}=400\text{mV}$</tex>
27. The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
28. (Invited) Electrical Activity of Extended Defects in III-V Semiconductors
29. Beyond SiliconMOS: An Electrical Study on Interface and Gate Dielectrics withacAdmittance Techniques
30. Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
31. A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications
32. Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below $\mathrm{V}_{\text{DD}}=400\text{mV}$
33. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1-xAs nTFETs
34. Deep level investigation of INGAAS on INP layer
35. The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs
36. Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
37. Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs
38. A Near- & Short-Wave IR Tunable InGaAs Nanomembrane PhotoFET on Flexible Substrate for Lightweight and Wide-Angle Imaging Applications
39. Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors.
40. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs
41. The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs
42. Tunnel FETs for low power electronics
43. Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs
44. Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
45. (Invited) Electrical Activity of Extended Defects in III-V Semiconductors
46. A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics
47. An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
48. Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise
49. Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices
50. Oxide Trapping in the InGaAs–$\hbox{Al}_{2} \hbox{O}_{3}$ System and the Role of Sulfur in Reducing the $ \hbox{Al}_{2}\hbox{O}_{3}$ Trap Density
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