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Your search keyword '"Ali, Yousuf Pyar"' showing total 7 results
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7 results on '"Ali, Yousuf Pyar"'

1. Electrical properties of high energy 120Sn implantation in GaAs

Author

Narsale, Arun, Ali, Yousuf Pyar, Bhambani, Uma, Salvi, V.P., Arora, B.M., Kanjilal, D., and Mehta, G.K.

Subjects
Annealing -- Research, Ion implantation -- Research, Gallium arsenide semiconductors -- Research, Physics
Abstract

An experiment is conducted to evaluate the transport characteristics of high energy 120Sn implanted GaAs substrates and changes in its electric properties brought about by annealing. Mirror polished substrates are used for the study. Results show that electrical conduction for samples annealed at 450 degrees centigrade is caused by a variable range hopping mechanism while hopping between neighboring defect sites affect conduction for samples annealed at 550 and 650 degrees centigrade.

Published
1997

7. Electrical Characteristics of GaAs Implanted with High Energy (100 MeV) 28Si and 120Sn Ions

Author

Ali, Yousuf Pyar, Narsale, Arun M., and Arora, Brij Mohan

Abstract

In this work we carried out electrical characterization of n-GaAs implanted at 300 K with high energy (100 MeV) 28Si and 120Sn ions to a fluence of 1x1018 ions/m2 using current–voltage (I-V) measurements. The as implanted samples and samples annealed in the temperature range 373-1123 K have been investigated. Resistance of the samples obtained from I-V curves recorded over the temperature range 110K-270K indicate that the samples implanted with 28Si and annealed up to 623 K and the samples implanted with 120Sn and annealed up to 723K shows tunnel assisted hoping conduction mechanism. In the other hand, 28Si implanted samples annealed to 723K and 823K and 120Sn implanted samples annealed to 823K and 923K the electrical conduction mechanism is dominated by thermal hoping between closed defect states.

Published
2014
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