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Next-generation low-cost semiconductors such as halide perovskites exhibit optoelectronic properties dominated by nanoscale variations in their structure, composition and photophysics. While microscopy provides a proxy for ultimate device function, past works have focused on neat thin-films on insulating substrates, missing crucial information about charge extraction losses and recombination losses introduced by transport layers. Here we use a multimodal operando microscopy toolkit to measure nanoscale current-voltage curves, recombination losses and chemical composition in an array of state-of-the-art perovskite solar cells before and after extended operational stress. We apply this toolkit to the same scan areas before and after extended operation to reveal that devices with the highest performance have the lowest initial performance spatial heterogeneity - a crucial link that is missed in conventional microscopy. We find that subtle compositional engineering of the perovskite has surprising effects on local disorder and resilience to operational stress. Minimising variations in local efficiency, rather than compositional disorder, is predictive of improved performance and stability. Modulating the interfaces with different contact layers or passivation treatments can increase initial performance but can also lead to dramatic nanoscale, interface-dominated degradation even in the presence of local performance homogeneity, inducing spatially varying transport, recombination, and electrical losses. These operando measurements of full devices act as screenable diagnostic tools, uniquely unveiling the microscopic mechanistic origins of device performance losses and degradation in an array of halide perovskite devices and treatments. This information in turn reveals guidelines for future improvements to both performance and stability., Comment: Main text and supplementary information. Main text 26 pages, 4 figures. Supplementary information 79 pages, 76 figures. Kyle Frohna and Cullen Chosy contributed equally

All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will accelerate advancement. Here, we perform extensive selective characterization of the individual sub-cells to disentangle the different losses and limiting factors in these tandem devices. We find that non-radiative losses in the high-gap subcell dominate the overall recombination losses in our baseline system as well as in the majority of literature reports. We consecutively improve the high-gap perovskite subcell through a multi-faceted approach, allowing us to enhance the open-circuit voltage ($V_{OC}$) of the subcell by up to 120 mV. Due to the (quasi) lossless indium oxide interconnect which we employ for the first time in all-perovskite tandems, the $V_{OC}$ improvements achieved in the high-gap perovskites translate directly to improved all-perovskite tandem solar cells with a champion $V_{OC}$ of 2.00 V and a stabilized efficiency of 23.7%. The efficiency potential of our optimized all-perovskite tandems reaches 25.2% and 27.0% when determined from electro- and photo-luminescence respectively, indicating significant transport losses as well as imperfect energy-alignment between the perovskite and the transport layers in the experimental devices. Further improvements to 28.4% are possible considering the bulk quality of both absorbers measured using photo-luminescence on isolated perovskite layers. Our insights therefore not only show an optimization example but a generalizable evidence-based strategy for optimization utilizing optical sub-cell characterization., Comment: Main text: 19 pages, 6 figures, supporting information: 17 pages, 18 figures

Determination of the device performance parameters of perovskite solar cells is far from trivial as transient effects may cause large discrepancies in current-voltage measurements as a function of scan rate and pre-conditioning. Maximum power point tracking, MPPT, enables to determine the steady-state maximum power conversion efficiency. However, the MPPT does not provide any information on the device performance parameters, which are reliable only if extracted from current-voltage curves collected under steady-state conditions. We show that is possible to determine the shorter settling or delay time suitable to carry out J-V measurements under steady-state conditions by analysis of the transient device response around the MPP. This procedure proves to be more time-efficient than measurement J-V measurements at a variety of scan rates. Furthermore, the generic algorithm presented here can be implemented to assess changes in the dynamic response of devices during long-term device ageing.

The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via transient and absolute photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer and specifically at the perovskite/C60 interface. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C60 electron-transporting layer. The resulting solar cells exhibited a Voc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, bringing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3%. Our results demonstrate very high Voc values and efficiencies in Sr-containing quadruple cation perovskite pin solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer., Comment: Manuscript and supporting information merged together in one file

Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces., Comment: Update of Figure 3 and Figure S9 and new Figure S10 added

Recently, we studied the effect of hexagonal sinusoidal textures on the reflective properties of perovskite-silicon tandem solar cells using the finite element method (FEM). We saw that such nanotextures, applied to the perovskite top cell, can strongly increase the current density utilization from 91% for the optimized planar reference to 98% for the best nanotextured device (period 500 nm and peak-to-valley height 500~nm), where 100% refers to the Tiedje-Yablonovitch limit. In this manuscript we elaborate on some numerical details of that work: we validate an assumption based on the Tiedje-Yablonovitch limit, we present a convergence study for simulations with the finite-element method, and we compare different configurations for sinusoidal nanotextures., Comment: Proceedings article, SPIE conference "Photonics for Solar Energy Systems VII," edited by Ralf B. Wehrspohn, Alexander N. Sprafke (Strasbourg, France, April 2018). This article is based on earlier work: D.Chen et. al, J. Photonics Energy 8}, 022601 (2018, arXiv:1801.07252 [physics.app-ph])