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Transverse current generation by circularly polarized light in biased matter has attracted considerable attention for studies of Floquet engineering and inverse spin Hall effect. Field-induced circular photogalvanic effect (FI-CPGE) also contributes to the current, but has been overlooked in many literatures. Using terahertz pulses as a bias field, we study the case of a prototypical semiconductor GaAs by two-dimensional Fourier analysis. We demonstrate the remarkable role of FI-CPGE resonantly enhanced near the band degeneracy, suggesting its potential to detect monopoles in momentum space. Our results provide a comprehensive understanding of the light-induced anomalous Hall effect., Comment: 17 pages, 4 figures

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $\mu$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the DC regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom., Comment: 18 pages, 4 figures

We propose a novel method for controlling the high-harmonic generation (HHG) with a high dynamic range in single-layer graphene. We find that, by utilizing shear strain, a significant enhancement or quenching of HHG is possible over a range of several orders of magnitude. This feature is made possible by the resonance mechanism at a van Hove singularity. Therein, the shear strain controls the configurations of the two Dirac cones, resulting in changes in the energy and dipole moment at the saddle point of the band dispersion. Our findings provide a way for modulating or switching light by using a nano-optomechanical device composed of single-layer graphene., Comment: 20 pages, 8 figures

We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing, and demonstrated single-photon generation from a QD and its unidirectional output from the waveguide. These results point out a promising approach toward scalable integration of SPSs on silicon quantum photonics platforms., Comment: 17 pages, 5 figures

We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture., Comment: 16 pages, 9 figures

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology., Comment: 14 pages, 4 figures

Transition metal compounds sometimes exhibit beautiful colors. We report here on a new oxychloride Ca3ReO5Cl2 which shows unusually distinct pleochroism; that is, the material exhibits different colors depending on viewing directions. This ple-ochroism is a consequence of the fact that a complex crystal field splitting of the 5d orbitals of the Re6+ ion in a square-pyramidal coordination of low-symmetry occurs accidentally in the energy range of the visible light spectrum. Since the rele-vant d-d transitions possess characteristic polarization dependences according to the optical selection rule, the orbital states are "visible" in Ca3ReO5Cl2., Comment: 6 pages, 5 figures

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum light sources that deterministically emit single photons. In this regard, the use of epitaxial InAs/GaAs quantum dots (QDs) is a very promising approach, because of their capability of deterministic single-photon emission with high purity and indistinguishability. However, the required hybrid integration is inherently difficult and often lacks the compatibility with CMOS processes. Here, we demonstrate a QD single-photon source (SPS) integrated on a glass-clad silicon photonic waveguide processed by a CMOS foundry. Hybrid integration is performed using transfer printing, which enables us to integrate heterogeneous optical components in a simple pick-and-place manner and thus assemble them after the entire CMOS process is completed. We observe single-photon emission from the integrated QD and its efficient coupling into the silicon waveguide. Our transfer-printing-based approach is fully compatible with CMOS back-end processes, and thus will open the possibility for realizing large-scale quantum PICs that leverage CMOS technology., Comment: 15 pages, 5 figures

The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficiencies are approaching the SQ limit, a quantitative argument with regard to these requirements is worthwhile in terms of understanding of the remaining loss mechanisms in current devices and the device characteristics of solar cells that are operating outside the detailed balance conditions. Here we examine two basic assumptions: (1) that the photo-generated carriers lose their kinetic energy via phonon emission in a moment (fast thermalization), and (2) that the photo-generated carriers are extracted into carrier reservoirs in a moment (fast extraction). Using a model that accounts for the carrier relaxation and extraction dynamics, we reformulate the nonequilibrium theory for solar cells in a manner that covers both the equilibrium and nonequilibrium regimes. Using a simple planar solar cell as an example, we address the parameter regime in terms of the carrier extraction time and then consider where the conventional SQ theory applies and what could happen outside the applicable range., Comment: 25 pages, 15 figures

We have developed a luminescence-measurement system for liquid bio/chemiluminescence that can obtain quantitative luminescence spectra as the absolute total number of luminescence photons at each wavelength or photon energy and quantum yields. Calibration of light-collection efficiency in the system is performed with a reference double-plate cell. This method is applicable to sample cells of any kind suitable for measurement, which is a great advantage over previous techniques in practical experiments. Using this system, the quantum yield of aqueous luminol chemiluminescence was obtained as 1.23-+0.20%, which is in good agreement with previously reported values., Comment: 33 pages 6 figures 3 tables

We measured absorption spectra of T-shaped quantum wires at room temperature using waveguide-transmission spectroscopy. Strong and narrow room-temperature one-dimensional-exciton absorption peak was observed, which shows peak modal absorption coefficient of 160 cm$^{-1}$ per 20 wires with $\Gamma$-factor of $4.3\times10^{-3}$, width of 7.2 meV, and strong polarization anisotropy., Comment: 3pages, 3figure, 1table

We measured the absorption spectrum of a single T-shaped, 14x6 nm lateral-sized quantum wire embedded in an optical waveguide using waveguide-transmission spectroscopy at 5 K. In spite of its small volume, the one-dimensional-exciton ground state shows a large absorption coefficient of 80 /cm, or a 98 % absorption probability for a single pass of the 500-um-long waveguide., Comment: 4 pages, 3 figures

We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations, only single-particle excitations (SPEs) were observed in intersubband Raman scattering, which was confirmed by the well-width dependence of Raman spectra. We found characteristic variations in Raman shift and line shape for SPEs with incident photon energy in the narrow QWs., Comment: 5 pages including 4 figures

A recent single quantum wire is of sufficient quality to reveal new details of the photoluminescence (PL) evolution with increasing electron--hole (e--h) pair density. At a pair density of 3.6 $\times$ 10$^{3}$ cm$^{-1}$, the PL is characteristic of biexcitons shifted below the exciton peak by the 2.8-meV biexciton binding. At the pair density of 1.2 $\times$ 10$^{5}$ cm$^{-1}$, the biexciton peak broadens without energy shift to an e--h plasma. At all pair densities up to 30 K, neither the exciton peak nor the one-dimensional (1D) continuum edge shows any shift. In contrast to prevailing theories, the low-energy edge of the plasma PL line never crosses the exciton peak and never makes contact with the 1D e--h continuum., Comment: 4 pages, including 3 figures; revised with new data

Spatially and spectrally resolved microscopic images of spontaneous and stimulated emissions are imaged at the mirror facets of a GaAs T-shaped quantum wire laser with high uniformity. Laser emission from the one-dimensional ground state reveals a circular image located at the core of a T-shaped optical waveguide but significantly smaller in area than the low power spontaneous emission from the same waveguide. These images unambiguously allow assignment of all spontaneous and laser emissions to the wire ground state and respective intersecting wells in the structure., Comment: 4 pages, 3 figures

We measured polarization-dependent photoluminescence-excitation spectra of highly uniform T-shaped quantum wires at 5 K. We attribute one peak to the 1D-exciton ground state and the continuous absorption band to 1D continuum states. These had similar polarization-dependences. We also observed some other peaks above the 1D-exciton ground state and attribute them to exciton states consisting of excited hole subbands. These results show good agreement with a model calculation of a single electron-hole pair in T-shaped geometry with exact diagonalizations of the Coulomb interaction.

A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al_{0.07}Ga_{0.93}As quantum well and a 6 nm GaAs quantum well, and is embedded in a 1-D single-mode optical waveguide. We observe single-mode lasing from the quantum wire ground state by optical pumping. The laser operates from 5 to 60 K, and has a low threshold pumping power of 5 mW at 5 K., Comment: 4 pages including 4 figures

High-quality T-shaped quantum wires are fabricated by cleaved-edge overgrowth with the molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal. Characterization by micro-photoluminescence (PL) and PL excitation (PLE) spectroscopy at 5 K reveals high uniformity, a sharp spectral width, and a small Stokes shift of one-dimensional (1-D) excitons. The PLE spectrum for 1-D states shows a large peak of ground-state excitons and a small absorption band ascribed to 1-D continuum states with an onset at 11 meV above the exciton peak., Comment: 4 pages, 4 figures, RevTeX

We calculate the intersubband absorption linewidth in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening that corresponds to the transport relaxation time related to electron mobility. Numerical calculations for GaAs QWs clarify the different contributions of each individual scattering mechanism to absorption linewidth and transport broadening. Interface roughness scattering contributes about an order of magnitude more to linewidth than to transport broadening, because the contribution from the intrasubband scattering in the first excited subband is much larger than that in the ground subband. On the other hand, LO phonon scattering (at room temperature) and ionized impurity scattering contribute much less to linewidth than to transport broadening. LA phonon scattering makes comparable contributions to linewidth and transport broadening, and so does alloy disorder scattering. The combination of these contributions with significantly different characteristics makes the absolute values of linewidth and transport broadening very different, and leads to the apparent lack of correlation between them when a parameter, such as temperature or alloy composition, is changed. Our numerical calculations can quantitatively explain the previously reported experimental results., Comment: 17 pages, including 15 figures

A multi-quantum wire laser operating in the 1-D ground state has been achieved in a very high uniformity structure that shows free exciton emission with unprecedented narrow width and low lasing threshold. Under optical pumping the spontaneous emission evolves from a sharp free exciton peak to a red-shifted broad band. The lasing photon energy occurs about 5 meV below the free exciton. The observed shift excludes free excitons in lasing and our results show that Coulomb interactions in the 1-D electron-hole system shift the spontaneous emission and play significant roles in laser gain., Comment: 4 pages, 4 figures, prepared by RevTeX

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic roughness. Micro-photoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of $\mu$m in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation., Comment: 4 pages, 3 figures, revTex4

We measured images and Fourier images of fluorescence for 0.11- and 0.22-$\mu$m-diameter dye-doped polystyrene micro-sphere beads on a solid immersion lens, and experimentally verified strongly-angle-dependent fluorescence intensities due to efficient near-field optical coupling in solid immersion fluorescence microscopy. The results are interpreted in comparison with calculated emission patterns of an emission dipole placed near a solid surface, which establish a basic model for high-collection efficiency in solid-immersion fluorescence microscopy., Comment: 4 pages, 4 figures, RevTeX4

We demonstrate strong one dimensional (1-D) many-body interaction effects in photoluminescence (PL) in a GaAs single quantum wire of unprecedented optical quality, where 1-D electron plasma densities are controlled via electrical gating. We observed PL of 1-D charged excitons with large binding energy of 2.3 meV relative to the neutral excitons, and its evolution to a Fermi-edge singularity at high electron density. Furthermore, we find a strong band-gap renormalization in the 1-D wire, or a large red-shift of PL with increased electron plasma density. Such a large PL red-shift is not observed when we create a high density neutral electron-hole plasma in the same wire, due probably to cancellation of the Coulomb interaction energy in the neutral plasma., Comment: 5 pages, 4 figures, RevTeX, to be published in Solid State Communications