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6. High frequency-low loss SAW resonators built on NanoCrystalline Diamond-based substrate

Author

Braun, L., primary, Boillot, P., additional, Renaud, S., additional, Girardet, E., additional, Martin, G., additional, Salut, R., additional, Daniau, W., additional, Gesset, C., additional, Bergonzo, P., additional, Saada, S., additional, Courjon, E., additional, Laroche, T., additional, Ballandras, S., additional, Desgrez, S., additional, Raynaud, L., additional, Aissa, K. Ait, additional, Legrani, O., additional, Sarry, F., additional, Vincent, B., additional, Mazria, O. El, additional, Laurent, S., additional, and Nallatamby, J.-C., additional

Published
2014
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7. GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Author

Cordier, Y., primary, Frayssinet, E., additional, Chmielowska, M., additional, Nemoz, M., additional, Courville, A., additional, Vennéguès, P., additional, Mierry, P. De, additional, Chenot, S., additional, Camus, J., additional, Aissa, K. Ait, additional, Simon, Q., additional, Brizoual, L. Le, additional, Djouadi, M. A., additional, Defrance, N., additional, Lesecq, M., additional, Altuntas, P., additional, Cutivet, A., additional, Agboton, A., additional, and Jaeger, J.‐C. De, additional

Published
2014
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10. GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers.

Author

Cordier, Y., Frayssinet, E., Chmielowska, M., Nemoz, M., Courville, A., Vennéguès, P., Mierry, P. De, Chenot, S., Camus, J., Aissa, K. Ait, Simon, Q., Brizoual, L. Le, Djouadi, M. A., Defrance, N., Lesecq, M., Altuntas, P., Cutivet, A., Agboton, A., and Jaeger, J.-C. De

Subjects
SEMICONDUCTOR research, SOLID state electronics, ALUMINUM nitride, ALUMINUM nitride films, GALLIUM nitride, SEMICONDUCTOR wafers
Abstract

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with device quality active layers, as attested by the realization of high electron mobility transistors. Furthermore, the low substrate bowing achieved with these structures is of high interest for the fabrication of large GaN-on-silicon wafers. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2014
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