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Surface passivation is an effective way to boost the efficiency and stability of perovskite solar cells (PSCs). However, a key challenge faced by most of the passivation strategies is reducing the interface charge recombination without imposing energy barriers to charge extraction. Here, a novel multifunctional semiconducting organic ammonium cationic interface modifier inserted between the light-harvesting perovskite film and the hole-transporting layer is reported. It is shown that the conjugated cations can directly extract holes from perovskite efficiently, and simultaneously reduce interface non-radiative recombination. Together with improved energy level alignment and the stabilized interface in the device, a triple-cation mixed-halide medium-bandgap PSC with an excellent power conversion efficiency of 22.06% (improved from 19.94%) and suppressed ion migration and halide phase segregation, which lead to a long-term operational stability, is demonstrated. This strategy provides a new practical method of interface engineering in PSCs toward improved efficiency and stability.

Over the last several years, there has been tremendous progress in the development of nanoscale halide perovskite materials and devices that possess a wide range of band gaps and tunable optical and electronic properties. Particularly, the emerging two-dimensional (2D) forms of halide perovskites are attracting more interest due to the long charge carrier lifetime, high photoluminescence quantum efficiency, and great defect tolerance. Interfacing 2D halide perovskites with other 2D materials including graphene and transition metal dichalcogenides (TMDs) significantly broadens the application range of the 2D materials and enhances the performance of the functional devices. The synthesis and characterization of 2D halide perovskite nanostructures, the interface of the 2D halide perovskites with other 2D materials, and the integration of them into high-performance optoelectronic devices including solar cells, photodetectors, transistors, and memory devices are currently under investigation. In this article, we review the progress of the above-mentioned topics in a timely manner and discuss the current challenges and future promising directions in this field.