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Research indicates that better efficiencies can be achieved through dual- and triple-junction Ga(0.5)In(0.5)P/GaAs/Ge solar cells. Triple-junction cells can achieve efficiency ratings of up to 26.7%, while dual- and triple-junction cells can provide 60% to 75% more end-of-life power than their high-efficiency silicon counterparts.

We conducted T = 6K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity. [ABSTRACT FROM AUTHOR]

We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB "type." We examined misorientation-based GB types, including coincident site lattice (CSL) ∑=3, other-CSL (∑=5-49), and general GBs (∑>49), which make up ≥47%-48%, ≥6%-8%, and ≥44%-47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ∼97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ≥16%-18% of ∑=3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl2-treated films were studied. The CdCl2 treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl2 treatment. [ABSTRACT FROM AUTHOR]

The combination of the resonance-coupled photoconductive decay (RCPCD) apparatus and a pump-probe free carrier absorption experiment results in a method of viewing transient mobility. RCPCD uses an Nd:YAG laser operating at 1064 nm to pump the p-type silicon wafer, and a microwave coil antenna detects the transient excess-carrier concentration. The pump-probe experiment uses the same pump laser and a 10.6 μm CO2 laser with HgCdTe photodetector to measure the transient change in absorption. The change in conductivity detected by RCPCD is directly proportional to the excess-carrier concentration (Δn) and mobility (μ), whereas the pump-probe experiment has an inversely proportional relationship. By mathematically combining these signals at equivalent optical fluxes, a quantity proportional to the mobility emerges. The mobility is shown to vary both temporally and with respect to injection, countering the assumption that mobility is constant for photoconductive decay measurements. Theory and results are discussed within. [ABSTRACT FROM AUTHOR]

Investigates the capture barrier and ionization entropies for the DX center in selenium-doped Al[subx]Ga[sub1-x]As. Theory of the study; Experimental results; Conclusion.

Presents a study that proposed a method to analyze digitally recorded capacitive transients for deep level spectroscopy of semiconductors. Methodology; Background on deep-level transient spectroscopy; Application of the proposed method in aluminum-gallium arsenide semiconductors.

The authors present examples of imaging characterization on Cu(In,Ga)Se2 (CIGS) solar cell devices. These imaging techniques include photoluminescence imaging, electroluminescence imaging, illuminated lock-in thermography, and forward- and reverse-bias dark lock-in thermographies. Images were collected on CIGS devices deposited at the National Renewable Energy Laboratory with intentional spatial inhomogeneities of the material parameters. Photoluminescence imaging shows brightness variations, which correlate to the device open-circuit voltage. Photoluminescence and electroluminescence imaging on CIGS solar cells show dark spots that correspond to bright spots on images from illuminated and forward-bias lock-in thermography. These image-detected defect areas are weak diodes that conduct current under solar cell operating conditions. Shunt defects are imaged using reverse-bias lock-in thermography. The authors show how imaging can be used to detect structural defects detrimental to solar cell performance. The images provide defect locations that are analyzed in more detail by scanning electron microscopy techniques using top view and cross section imaging. [ABSTRACT FROM AUTHOR]