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This review delves into the advancements in optoelectronic logic gate (OELG) devices, emphasizing their transformative potential in computational technology through the integration of optical and electronic components. OELGs present significant advantages over traditional electronic logic gates, including enhanced processing speed, bandwidth, and energy efficiency. The evolution of OELG architectures from single‐device, single‐logic systems to more sophisticated multidevice, multilogic, and reconfigurable OELGs is comprehensively explored. Key advancements include the development of materials and device structures enabling multifunctional logic operations and the incorporation of in‐memory functionalities, critical for applications in high‐performance computing and real‐time data processing. This review also addresses the challenges that need to be overcome, such as stability, durability, integration with existing semiconductor technologies, and efficiency. By summarizing current research and proposing future directions, this review aims to guide the ongoing development of next‐generation optoelectronic architectures, poised to redefine the landscape of optical computing, communication, and data processing. [ABSTRACT FROM AUTHOR]

When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated when n‐type gallium nitride nanowires (n‐GaN NWs) are used as electron transport layers in methylammonium lead iodide (MAPbI3)‐based optoelectronic devices. n‐GaN NWs are grown on indium‐tin‐oxide (ITO)‐coated glass via the plasma‐assisted molecular beam epitaxy (PA‐MBE) process to form the "GaN NWs‐on‐glass" platform. A MAPbI3 thin film is then spin‐coated on the GaN NWs‐on‐glass. X‐ray photoelectron spectroscopy (XPS) shows that the valence and conduction band offsets in the MAPbI3/n‐GaN heterostructure are 2.19 and 0.40 eV, respectively, indicating a type‐II band alignment ideal for optoelectronic applications. Prototype photovoltaic devices stacking perovskite on GaN NWs‐on‐glass show excellent interfacial charge‐transfer ability, photon recycling, and carrier extraction efficiency. As a pioneering step in exploiting the diverse potential of the GaN‐on‐glass, it is demonstrated that the junction characteristics of MAPbI3/n‐GaN NW heterostructures can lead to a variety of optoelectronic device applications. [ABSTRACT FROM AUTHOR]

The discovery of ferroelectricity in HfO2 ultrathin films has gathered considerable interest from the microelectronic industry owing to their compatibility with complementary metal oxide semiconductor technology. However, a significant challenge in utilizing HfO2 thin films for commercial devices is the wakeup effect, which is an increase in polarization with the number of electric field cycles in HfO2-based capacitors. Despite efforts to develop wakeup-free HfO2 thin films, the root cause of this effect remains elusive. Some studies attribute it to the tetragonal (T) to orthorhombic (O) phase transformation, while others suggest it is due to the redistribution of oxygen vacancies within the HfO2 layer during electric field cycling. This study investigated the phase transformation dynamics and oxygen vacancy distributions in TiN/Hf0.5Zr0.5O2/TiN capacitors subjected to electric field cycling using in situ grazing incidence synchrotron x-ray diffraction and ex situ x-ray photoelectron spectroscopy. The as-grown HZO films were crystallized in a mixed phase consisting of monoclinic (M), tetragonal, and orthorhombic fractions. The T-phase volume fraction decreased continuously up to 10k electric field cycles. In contrast, the O-phase fraction increased within the first 100 cycles and then stabilized with further cycling. The redistribution of oxygen vacancies occurred continuously throughout the cycling process. The results revealed that continuous oxygen vacancy redistribution during electric field cycling resulted in phase transformation between the T-, O-, and M-phases. The study provides insight into the phase transformation dynamics and oxygen vacancy redistribution in TiN/Hf0.5Zr0.5O2/TiN capacitors during electric field cycling, shedding light on the underlying mechanisms of the wakeup effect. [ABSTRACT FROM AUTHOR]

Selective spectral discrimination of visible and near‐infrared light, which accurately distinguishes different light wavelengths, holds considerable promise in various fields, such as automobiles, defense, and environmental monitoring. However, conventional imaging technologies suffer from various issues, including insufficient spatial optimization, low definition, and optical loss. Herein, a groundbreaking advancement is demonstrated in the form of a dual‐band photodiode with distinct near‐infrared‐ and visible‐light discrimination obtained via simple voltage control. The approach involves the monolithic stacking integration of methylammonium lead iodide (MAPbI3) and Si semiconductors, resulting in a p‐Si/n‐phenyl‐C61‐butyric acid methyl ester/i‐MAPbI3/p‐spiro‐MeOTAD (PNIP) device. Remarkably, the PNIP configuration can independently detect the visible and near‐infrared regions without traditional optical filters under a voltage range of 3 to −3 V. In addition, an imaging system for a prototype autonomous vehicle confirms the capability of the device to separate visible and near‐infrared light via an electrical bias and practicality of this mechanism. Therefore, this study pushes the boundaries of image sensor development and sets the stage for fabricating compact and power‐efficient photonic devices with superior performance and diverse functionality. [ABSTRACT FROM AUTHOR]

The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO4) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO4 crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO4 should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO4 were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO4 thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices. [ABSTRACT FROM AUTHOR]

True random numbers are essential for ensuring information security and supporting simulations across various industries. With the exponential growth of data driven by advancements in artificial intelligence, robust encryption for communications has become increasingly important. While software-based deterministic random number algorithms are cost-effective and easy to use, they are vulnerable to attacks by powerful supercomputers, highlighting the need for more secure alternatives. As portable electronic devices and information-gathering sensors proliferate, portable true random number generators (TRNGs) are critical for maintaining security. In this work, hybrid material-based photodetectors composed of anionic polymers and perovskites that maximize stochastic photogeneration for TRNG applications are presented. By integrating perovskite photodetectors with simple electronic circuits, compact, low-power TRNG devices have been developed that are versatile and resilient to environmental factors. These devices generate 10 000 bits s -1 without resets or delays, achieving significant miniaturization. The generated 10 Mbit random number is validated through US National Institute of Standards and Technology (NIST) testing. Using a 480 000-bit random sequence, perfect image encryption, ensuring protection against hacking are demonstrated. Additionally, the perovskite TRNG can operate under external light even when embedded in pork skin, realizing its potential as an implantable device for personal security and authentication., (© 2025 The Author(s). Advanced Science published by Wiley‐VCH GmbH.)