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21. Wnt/β-catenin signaling mediates resistance of colorectal cancer cells to radiation

Author

Kendziorra, E, Ahlborn, K, Spitzner, M, Emons, G, Rave-Fränk, M, Gaedcke, J, Becker, H, Pukrop, T, Ghadimi, BM, Ried, T, and Grade, M

Subjects
ddc: 610, 610 Medical sciences, Medicine
Abstract

Introduction: The clinical response of locally advanced rectal cancers to preoperative chemoradiotherapy is very heterogeneous. To determine the molecular characteristics underlying this heterogeneous response, we recently used gene expression microarrays to profile a series of responsive and resistant[for full text, please go to the a.m. URL], 128. Kongress der Deutschen Gesellschaft für Chirurgie

Published
2011
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43. Lattice and atomic structure imaging of semiconductors by high resolution transmission electron microscopy.

Author

Ourmazd, A., Ahlborn, K., Ibeh, K., and Honda, T.

Subjects
*LATTICE theory, *SEMICONDUCTORS, *CRYSTALLOGRAPHY, *TRANSMISSION electron microscopes
Abstract

We show that the new generation of high resolution transmission electron microscopes allows the lattice imaging of semiconductors in at least four crystallographic orientations and present the first atomic structure images of Si, both in the <100> and <111> orientations. We demonstrate the ability to lattice image along different orientations such as <111> and <112> by tilting between them. Thus, the potential exists to obtain three-dimensional maps of atom positions around individual features of interest such as defects and interfaces. [ABSTRACT FROM AUTHOR]

Published
1985
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44. Diffusion of gallium along small-angle grain boundaries in germanium

Author

Ahlborn, K. and Schröter, W.

Abstract

Diffusion profiles of gallium in germanium containing a small-angle symmetric tilt boundary have been determined as a function of temperature and misorientation angle. The observed diffusion tails cannot be described in terms of the phono-monological pipe diffusion or grain-boundary diffusion models. The results may be understood by diffusion along a second phase, containing Ge, which forms around the dislocations, and in which the solubility of gallium is about 102 103 times that in the unperturbed germanium matrix.

Published
1983
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45. Dynamical recovery and self-diffusion in InP

Author

Siethoff, H., Ahlborn, K., Brion, H. G., and Völkl, J.

Abstract

Single crystals of InP with 〈123〉 orientation have been deformed at constant strain rates at temperatures between 540 and 780°C. The resulting stress-strain curves are rather similar to those obtained for other semiconductors such as Ge, Si and InSb, and two stages of dynamical recovery can be clearly identified. From the strain-rate and temperature dependences of the stress τiii at the beginning of the first recovery stage, an activation energy of 2.3 eV is deduced. This may be regarded as a lower bound for the activation energy of self-diffusion of the slowest-moving species; for the pre-exponential factor D0 of the diffusion coefficient a value between 10-3 and 10-2 cm2 s-1 is estimated.

Published
1988
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