362 results on '"Afanas’ev, V.V."'
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2. Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface
3. Basics of organizing work with young people
4. Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
5. Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films
6. Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
7. Shallow electron traps in high-k insulating oxides
8. Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures
9. Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
10. Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor
11. Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates
12. Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interface
13. Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass
14. Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1 − xSnx, SiyGe1 − x − ySnx) with Al2O3
15. Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?
16. First-principles investigation of defects at GaAs/oxide interfaces
17. Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy
18. Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2
19. SrTiOx for sub-20 nm DRAM technology nodes—Characterization and modeling
20. Paramagnetic oxide traps in Sc2O3-passivated (1 0 0)Ge/HfO2 stacks
21. First-principles study of strained 2D MoS2
22. Vibrational properties of epitaxial silicene layers on (1 1 1) Ag
23. First-principles electronic functionalization of silicene and germanene by adatom chemisorption
24. Theoretical aspects of graphene-like group IV semiconductors
25. Comparative analysis of thermally induced degradation of condensation-grown (1 0 0)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance
26. PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION
27. Point defects in thermal GaAs/GaAs-oxide structures probed by electron paramagnetic resonance
28. Control of metal/oxide electron barriers in CBRAM cells by low work-function liners
29. Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ = 2.0–2.5)
30. A computational study of Si–H bonds as precursors for neutral [formula omitted] centres in amorphous silica and at the Si/SiO2 interface
31. Electron barrier height at CuxTe1 − x/Al2O3 interfaces of conducting bridge memory stacks
32. A study of the leakage current in TiN/HfO2/TiN capacitors
33. Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films
34. Electron spin resonance study of defects in low- κ oxide insulators ( κ = 2.5–2.0)
35. Band offsets at the (1 0 0)GaSb/Al 2O 3 interface from internal electron photoemission study
36. Towards barrier height modulation in HfO 2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?
37. Inherent interfacial Si dangling bond point defects in thermal (1 1 0)Si/SiO 2
38. Experimental and theoretical investigation of defects at (1 0 0) Si 1−xGe x/oxide interfaces
39. Effect of the composition on the bandgap width of high-κ Me xTi yO z (Me = Hf, Ta, Sr) layers
40. Observation of a paramagnetic defect at the epitaxial Ge 3N 4/(111)Ge interface by electron spin resonance
41. Integration of low dimensional crystalline Si into functional epitaxial oxides
42. Paramagnetic Ge dangling bond type defects at (1 0 0)Si 1−xGe x/SiO 2 interfaces (Invited Paper)
43. Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO 3 layers
44. High- k dielectrics for future generation memory devices (Invited Paper)
45. Band offsets at interfaces of (1 0 0)In xGa 1−xAs (0 ⩽ x ⩽ 0.53) with Al 2O 3 and HfO 2
46. The [formula omitted] center as a probe of structural properties of nanometer-sized silica particles
47. Influence of passivating interlayer on Ge/HfO 2 and Ge/Al 2O 3 interface band diagrams
48. Electronic structure at interfaces of cubic Gd 2O 3 with embedded Si nanocrystals
49. Preface
50. Paramagnetic intrinsic point defects in nm-sized silica particles: Interaction with SiO at elevated temperatures
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