1. Adjustment methods of Schottky barrier height in one- and two-dimensional semiconductor devices.
- Author
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Meng, Jianping, Lee, Chengkuo, and Li, Zhou
- Subjects
- *
SCHOTTKY barrier , *SEMICONDUCTOR junctions , *ACTIVATION energy , *METALWORK , *ELECTRIC fields , *SEMICONDUCTOR devices , *VAN der Waals forces - Abstract
[Display omitted] The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal–semiconductor interface. Controlling or adjusting Schottky barrier height (SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nano-semiconductor devices. These methods encompass the work function of the metals, interface gap states, surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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