175 results on '"Adivarahan, V."'
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2. High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes
3. Quaternary AlInGaN MQWs for Ultraviolet LEDs
4. Low-frequency noise in n-GaN with high electron mobility
5. Reliability and degradation modes of 280 nm deep UV LEDs on sapphire
6. Micro-Raman Spectroscopy: Self-Heating Effects In Deep UV Light Emitting Diodes
7. Large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate
8. Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate
9. Enhancement of light extraction efficiency in sub-300nm nitride thin-film flip-chip light-emitting diodes
10. Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric
11. Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2gate dielectric
12. MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters
13. RF large-signal model for SiO2/AlGaN/GaN MOSHFETs
14. Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications
15. Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET
16. Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode
17. The 1.6-kV AlGaN/GaN HFETs
18. Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates
19. III-nitride transistors with capacitively coupled contacts
20. Low Dynamic On-Resistance Kilovolt-Range AlGaN/GaN HFETs
21. III-Nitride Field-Effect Transistors with Capacitively-Coupled Contacts
22. Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire
23. High-power operation of III-N MOSHFET RF switches
24. Mechanism of current collapse removal in field-plated nitride HFETs
25. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
26. Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
27. Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes
28. Luminescence of highly excited nonpolara-plane GaN epilayers
29. Performance stability of high-power III-nitride metal-oxide semiconductor-heterostructure field-effect transistors
30. White light generation using 280 nm light emitting diode pumps
31. Influence of stacking faults on the properties of GaN‐based UV light‐emitting diodes grown on non‐polar substrates
32. Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
33. High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors
34. Stable 20 W∕mm AlGaN-GaN MOSHFET
35. High-power stable field-plated AlGaN-GaN MOSHFETs
36. 250nmAlGaN light-emitting diodes
37. High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design
38. Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth
39. AlGaN -based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
40. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
41. Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
42. Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics
43. Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN
44. Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
45. GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
46. Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
47. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
48. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes
49. Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm
50. Reliability issues in AlGaN based deep ultraviolet light emitting diodes.
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