76 results on '"Adam, Kostas"'
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2. Polarization effects in plasmonic masks
3. Real-time full-wafer design-based inter-layer virtual metrology
4. Using machine learning in the physical modeling of lithographic processes
5. Process window-based feature and die failure rate prediction
6. Physical and compact modeling of resist deformation (Conference Presentation)
7. Using Machine Learning in the Physical Modeling of Lithographic Processes.
8. Process window-based feature and die failure rate prediction.
9. Edge placement errors in EUV from aberration variation
10. Optical proximity correction for anamorphic extreme ultraviolet lithography
11. Aerial image metrology for OPC modeling and mask qualification
12. Enabling full-field physics-based optical proximity correction via dynamic model generation
13. Enabling full field physics based OPC via dynamic model generation
14. Effective use of aerial image metrology for calibration of OPC models
15. Modeling metrology for calibration of OPC models
16. Source mask optimization using 3D mask and compact resist models
17. Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners
18. Aerial Image Metrology for OPC Modeling and Mask Qualification.
19. Optical proximity correction for anamorphic extreme ultraviolet lithography.
20. Using machine learning in the physical modeling of lithographic processes
21. Process window-based feature and die failure rate prediction
22. Practical DTCO through design/patterning exploration
23. Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners
24. Full-flow RET creation, comparison, and selection
25. 14-nm photomask simulation sensitivity
26. Rapid, accurate improvement in 3D mask representation via input geometry optimization and crosstalk
27. EUV-CDA: Pattern shift aware critical density analysis for EUV mask layouts
28. Accurate 3DEMF mask model for full-chip simulation
29. Lithography simulation for the fabrication of silicon photonic devices with deep-ultraviolet lithography
30. Full-chip correction of implant layer accounting for underlying topography
31. Edge placement errors in EUV from aberration variation
32. Optical proximity correction for anamorphic extreme ultraviolet lithography
33. Aerial image metrology for OPC modeling and mask qualification
34. Effective use of aerial image metrology for calibration of OPC models
35. Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems
36. OPC modeling and correction solutions for EUV lithography
37. Total source mask optimization: high-capacity, resist modeling, and production-ready mask solution
38. Applicability of global source mask optimization to 22/20nm node and beyond
39. Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations
40. Modeling laser bandwidth for OPC applications
41. EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing
42. Reverse engineering source polarization error
43. Physically based compact models for fast lithography simulation
44. Polarization influences through the optical path
45. Modeling laser bandwidth for OPC applications.
46. Analytical approximations of the source intensity distributions.
47. Polarization influences through the optical path.
48. Physically based compact models for fast lithography simulation.
49. Modeling metrology for calibration of OPC models
50. Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners
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