Search

Trigonal tellurium is a small band gap elemental semiconductor consisting of van der Waals bound one-dimensional helical chains of tellurium atoms. We study the temperature dependence of the charge carrier mobility and recombination pathways in bulk tellurium. Electrons and holes are generated by irradiation of the sample with 3 MeV electrons and detected by time-resolved microwave conductivity measurements. A theoretical model is used to explain the experimental observations for different charge densities and temperatures. Our analysis reveals a high room temperature mobility of 190 ± 20 cm2 V-1 s-1. The mobility is thermally deactivated, suggesting a band-like transport mechanism. According to our analysis, the charges predominantly recombine via radiative recombination with a radiative yield close to 98%, even at room temperature. The remaining charges recombine by either trap-assisted (Shockley-Read-Hall) recombination or undergo trapping to deep traps. The high mobility, near-unity radiative yield, and possibility of large-scale production of atomic wires by liquid exfoliation make Te of high potential for next-generation nanoelectronic and optoelectronic applications, including far-infrared detectors and lasers., ChemE/Opto-electronic Materials, ChemE/O&O groep

Trigonal selenium is a semiconducting van der Waals solid that consists of helical atomic chains. We studied the mobility and decay dynamics of excess electrons and holes moving along the selenium chains. Excess charge carriers were generated by irradiation of powdered selenium with 3 MeV electron pulses. Their mobility and decay via trapping or recombination was studied by time-resolved microwave conductivity measurements as a function of temperature. The mobility of charge carriers along the Se chains is at least ca. 0.5 cm2·V-1·s-1 at room temperature. Charges decay predominantly by trapping at defects. The appreciable mobility, together with the potential for large-scale production of Se wires by liquid exfoliation, makes this material of great interest for use in nanoelectronics., ChemE/Opto-electronic Materials