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Samarium substituted bismuth ferrite (BiFeO3) ceramics prepared by sol-gel synthesis method were studied using both local scale and microscopic measurement techniques in order to clarify an evolution of the crystal structure of the compounds across the morphotropic phase boundary region. X-ray diffraction analysis, transmission and scanning electron microscopies, XPS, EDS/EDX experiments and piezoresponse force microscopy were used to study the structural transitions from the polar active rhombohedral phase to the anti-polar orthorhombic phase and then to the non-polar orthorhombic phase, observed in the Bi1-xSmxFeO3 compounds within the concentration range of 0.08 < x < 0.2. The results obtained by microscopic techniques testify that the compounds in the range of 0.12 < x < 0.15 are characterized by two phase structural state formed by a coexistence of the rhombohedral and the anti-polar orthorhombic phases; two phase structural state observed in the compounds with 0.15 < x < 0.18 is associated with a coexistence of the anti-polar orthorhombic and the non-polar orthorhombic phases. Local scale measurements have revealed a notable difference in the concentration range ascribed to the morphotropic phase boundary estimated by microscopic measurements, the obtained results testify a wider concentration range ascribed to a coexistence of different structural phases, the background of the mentioned difference is discussed.

Single phase barium titanate-bismuth ferrite ((1-x)BaTi$_3$-(x)BiFe$_3$, BTO-BFO) solid solutions were prepared using citric acid and ethylene glycol assisted sol-gel synthesis method. Depending on the dopant content the samples are characterized by tetragonal, tetragonal-pseudocubic, pseudocubic and rhombohedral structure as confirmed by Raman spectroscopy and XRD measurements. An increase of the BFO content leads to a reduction in the cell parameters accompanied by a decrease in polar distortion of the unit cell wherein an average particle size increases from 60 up to 350 nm. Non zero piezoresponse was observed in the compounds with pseudocubic structure while no polar distortion was detected in their crystal structure using X-ray diffraction method. The origin of the observed non-negligible piezoresponse was discussed assuming a coexistence of nanoscale polar and non-polar phases attributed to the solid solutions with high BFO content. A coexistence of the nanoscale regions having polar and non-polar character is considered as a key factor to increase macroscopic piezoresponse in the related compounds due to increased mobility of the domain walls and phase boundaries.

We report the first direct demonstration of possibility to generate the extreme ultraviolet (EUV) radiation with a freely expanding jet of dense plasma with multiply-charged ions supported by high-power microwaves. The detected emission power is about 20 W at 18--50 nm for argon and xenon and 0.3 W at 13--17 nm for xenon. The discharge with a peak electron density up to $3\times 10^{16}\,$cm$^{-3}$ and a characteristic size of $150\,\mu$m is supported by a focused radiation of a recently developed gyrotron with unique characteristics, 250~kW output power at 250~GHz, operating in a relatively long (50$\,\mu$s) pulse mode. Up-scaling of these experimental results gives grounds for development of a point-like kilowatt-level EUV source for a high-resolution lithography able to fulfill requirements of the microelectronics industry., Comment: 5 pages, 3 figures, submitted to Appl. Phys. Lett. (2018)

We discuss a concept of a point-like source of the extreme ultraviolet (EUV) light based on a non-equilibrium microwave discharge in expanding jet of dense xenon plasma with multiply charged ions. A conversion efficiency of microwave radiation to EUV light is calculated, and physical constraints, and opportunities for future devices are considered. Special attention is given to trapping of spontaneous line emission inside a radiating plasma spot that significantly influences the efficiency of EUV light source., Comment: This is an author-created version of an article published in Physical Review Applied

We obtain theoretical expressions for the photocurrent in the Heterojunction solar cells with Intrinsic Thin layer (HIT cells). Our calculations take into account tunneling of electrons and holes through wide-bandgap layers of $\alpha$-Si:H or $\alpha$-SiC:H. We introduce the criteria, under which tunneling does not lead to the deterioration of solar cell characteristics, in particular, to the reduction of the short-circuit current and open-circuit voltage. We propose an algorithm to compute the photoconversion efficiency of HIT elements, taking into account the peculiarities of the open-circuit voltage generation, in particular, its rather high values. We test our theoretical predictions against the experimental results. For this, we fabricate HIT elements with the efficiency of about $20\,\%$. We measured the temperature dependence of the short-circuit current, open-circuit voltage, photoconversion power, and fill factor of the current-voltage curve of these elements in a wide temperature range from 80 to 420\,K. In the low-temperature range, the open-circuit voltage and the photoconversion power decrease on cooling. At $T \ge 200$\,K, the theoretical expressions and the experimental curves agree rather well. The behavior of the fill factor and output power at low temperatures is explained by the increase of the series resistance on cooling. We discuss the reasons behind the reduction of the power temperature coefficient in HIT elements. We show that they are related to the low value of the combined surface and volume recombination rate. Finally, we derive a theoretical expression for the HIT element's operation temperature under natural working conditions.