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We investigate anomalous spin and orbital Hall phenomena in antiferromagnetic (AF) materials via orbital pumping experiments. Conducting spin and orbital pumping experiments on YIG/Pt/Ir20Mn80 heterostructures, we unexpectedly observe strong spin and orbital anomalous signals in an out-of-plane configuration. We report a sevenfold increase in the signal of the anomalous inverse orbital Hall effect (AIOHE) compared to conventional effects. Our study suggests expanding the Orbital Hall angle ({\theta}_OH) to a rank 3 tensor, akin to the Spin Hall angle ({\theta}_SH), to explain AIOHE. This work pioneers converting spin-orbital currents into charge current, advancing the spin-orbitronics domain in AF materials., Comment: 5 pages and 4 figures

In this work, we explore the intriguing spin-momentum locking phenomenon within the Rashba states of antimony (Sb) films. By combining spin pumping with the flow of an external charge current, we reveal the topological properties of surface states in Sb films. Taking advantage of the well-defined spin polarization of both spin-momentum-locked charge currents and spin-pumped currents, we demonstrate precise manipulation over the direction and magnitude of the resulting charging current, generated through the inverse Rashba-Edelstein effect. This fascinating phenomenon is attributed to the dynamic interaction between the accumulation of out-of-equilibrium pumped spins and the flowing spins, intrinsically locked perpendicular to the direction of the charge current. The results show that Sb as a promising material for basic and applied investigation of spintronics phenomena. We believe that the nanostructures investigated here open the way for the development of low-power logic gates operating in the range of a few tens of microamperes., Comment: 25 pages, 11 figures

Our investigation reveals a groundbreaking discovery of a negative inverse orbital Hall effect (IOHE) in Ge thin films. We employed the innovative orbital pumping technique where spin-orbital coupled current is injected into Ge films using YIG/Pt(2)/Ge($t_{Ge}$) and YIG/W(2)/Ge($t_{Ge}$) heterostructures. Through comprehensive analysis, we observe significant reductions in the signals generated by coherent (RF-driven) and incoherent (thermal-driven) spin-orbital pumping techniques. These reductions are attributed to the presence of a remarkable strong negative IOHE in Ge, showing its magnitude comparable to the spin-to-charge signal in Pt. Our findings reveal that although the spin-to-charge conversion in Ge is negligible, the orbital-to-charge conversion exhibits large magnitude. Our results are innovative and pioneering in the investigation of negative IOHE by the injection of spin-orbital currents., Comment: 6 pages and 4 figures

In this work, the spin pumping technique was employed to investigate the anomalous inverse spin Hall effect in BIG/NiO/Fe samples where BIG[(Bi,Tm)3(Fe,Ga)5O12] exhibits perpendicular magnetic anisotropy. Our results reveal an intriguing phenomenon: when the magnetizations of both ferromagnetic layers align perpendicularly, a distinct spin-to-charge current conversion mechanism occurs. This conversion is intricately linked to the magnetization of the converting layer, spin polarization, and the spin current orientation., Comment: 11 pages, 4 figures

We investigated how different materials affect the orbital-charge conversion in heterostructures with the naturally oxidized cooper capping layer. When we added a thin layer of $CuOx(3nm)$ onto yttrium iron garnet $(YIG)/W$ stacks, we observed a significant reduction in the charge current signal measured by means the spin pumping effect technique. This finding contrasts with the results of a prior study conducted on YIG/Pt/CuOx, which reported the opposite effect. On the other hand, when we added the same $CuOx(3nm)$ layer to $YIG/Ti(4nm)$ structures, there was not much change in the spin pumping signal. This occurred because Ti does not generate much orbital current at the $Ti/CuOx$ interface, unlike Pt, due to its weaker spin-orbit coupling. Interestingly, when we added the $CuOx(3nm)$ layer to $SiO_{2}/Py(5nm)/Pt(4nm)$ structures, the spin pumping signal increased. However, in $SiO_{2}/CuOx(3nm)/Pt(4nm)/Py(5nm)$ structures, the signal decreased. Finally, we delve into a theoretical analysis of the spin (orbital) Hall effect in YIG/Heavy-metal systems. These findings have the potential to advance research in the innovative field of orbitronics and contribute to the development of new technologies based on spin-orbital conversion., Comment: 21 pages, 6 figures

The spin-to-charge conversion phenomena is investigated in a trilayer structure consisting of Co(12 nm)/Sb(t)/Py(12 nm), where the thickness t of the antimony layer is varied. Using the spin-pumping technique, a pure spin current is injected from both FM layers into the middle layer, the DC voltage is then measured. We observe a spin-to-charge mechanism in the Sb layer that exhibits striking similarities to the inverse Rashba-Edelstein effect (IREE), driven by surface states., Comment: 6 pages, 4 figures

While current-induced torque by orbital current has been experimentally found in various structures, evidence for its reciprocity has been missing so far. Here, we report experimental evidence of strong inverse orbital torque in YIG/Pt/CuOx (YIG = Y3Fe5O12) mediated by spin-orbital entangled electronic states in Pt. By injecting spin current from YIG to Pt by the spin pumping via ferromagnetic resonance and by the spin Seebeck effect, we find a pronounced inverse spin Hall effect-like signal. While a part of the signal is explained as due to the inverse spin-orbital Hall effect in Pt, we also find substantial increase of the signal in YIG/Pt/CuOx structures compared to the signal in YIG/Pt. We attribute this to the inverse orbital Rashba-Edelstein effect at Pt/CuOx interface mediated by the spin-orbital entangled states in Pt. Our work paves the way toward understanding of spin-orbital entangled physics in nonequilibrium and provides a way for electrical detection of the orbital current in orbitronic device applications., Comment: 14 pages, four figures

The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more efficient wave-based logic and memory computing devices. In MI/NM bilayers, where NM being a normal metal providing a strong spin-orbit coupling, the PMA benefits the spin-orbit torque (SOT) driven magnetization's switching by lowering the needed current and rendering the process faster, crucial for developing magnetic random-access memories (SOT-MRAM). In this work, we investigated the magnetic anisotropies in thulium iron garnet (TIG) films with PMA via ferromagnetic resonance measurements, followed by the excitation and detection of magnon-mediated pure spin currents in TIG/Pt driven by microwaves and heat currents. TIG films presented a Gilbert damping constant {\alpha}~0.01, with resonance fields above 3.5 kOe and half linewidths broader than 60 Oe, at 300 K and 9.5 GHz. The spin-to-charge current conversion through TIG/Pt was observed as a micro-voltage generated at the edges of the Pt film. The obtained spin Seebeck coefficient was 0.54 {\mu}V/K, confirming also the high interfacial spin transparency.

We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the $Bi_{2}Se_{3}$ layer by means of the spin pumping process in which the spin precession is obtained by exciting the ferromagnetic resonance of the ferromagnetic film. The spin-current to charge-current conversion, occurring at the $Bi_{2}Se_{3}/$ferromagnet interface, was attribute to the inverse Rashba-Edelstein effect (IREE). By analyzing the data as a function of the $Bi_{2}Se_{3}$ thickness we calculated the IREE length used to characterize the efficiency of the conversion process and found that 1.2 pm $\leq|{\lambda}_{IREE}|\leq$ 2.2 pm. These results support the fact that the surface states of $Bi_{2}Se_{3}$ have a dominant role in the spin-charge conversion process, and the mechanism based on the spin diffusion process plays a secondary role. We also discovered that the spin- to charge-current mechanism in $Bi_{2}Se_{3}$ has the same polarity as the one in Ta, which is the opposite to the one in Pt. The combination of the magnetic properties of YIG and Py, with strong spin-orbit coupling and dissipationless surface states topologically protected of $Bi_{2}Se_{3}$ might lead to spintronic devices with fast and efficient spin-charge conversion.