Search

Because of the extreme purity, lack of disorder, and complex order parameter, the first-order superfluid $^3$He A-B transition is the leading model system for first order transitions in the early universe. Here we report on the path dependence of the supercooling of the A phase over a wide range of pressures below 29.3 bar at nearly zero magnetic field. The A phase can be cooled significantly below the thermodynamic A-B transition temperature. While the extent of supercooling is highly reproducible, it depends strongly upon the cooling trajectory: The metastability of the A phase is enhanced by transiting through regions where the A phase is more stable. We provide evidence that some of the additional supercooling is due to the elimination of B phase seeds formed upon passage through the superfluid transition. A greater understanding of the physics is essential before the $^3$He can be exploited to model transitions in the early universe., Comment: 6 Figures

In a neutral system such as liquid helium-3, transport of mass, heat, and spin provide information analogous to electrical counterparts in metals, superconductors and topological materials. Of particular interest is transport in strongly confining channels of height approaching the superfluid coherence length, where new quantum states are found and excitations bound to surfaces and edges should be present. Here we report on the thermal conduction of helium-3 in a 1.1~$\mu$m high microfabricated channel. In the normal state we observe a diffusive thermal conductivity that is approximately temperature independent, consistent with recent work on the interference of bulk and boundary scattering. In the superfluid state we measure diffusive thermal transport in the absence of thermal counterflow. An anomalous thermal response is also detected in the superfluid which we suggest may arise from a flux of surface excitations., Comment: A supplement is available. Please contact Jeevak Parpia (jmp9@cornell.edu) if you would like the supplement as well

We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technology applications. It encompasses the demands for scalable fabrication as well as for ultra-fast response due to weak coupling to environment. The fabricated devices exhibited initially a weak field-effect response with substantial positive ($p$) doping which transformed into weak negative ($n$) doping upon current annealing at the temperature of 4 Kelvin. With increased annealing current, $n$-doping gradually decreased while the Dirac peak position approached zero in gate voltage. An ultra-low residual charge density of $9\times10^8 \mathrm{ \ cm^{-2}}$ and a mobility of $1.9 \times 10^5 \mathrm{\ cm^2/Vs}$ were observed. Our samples display clear Fabry-P\'{e}rot (FP) conductance oscillation which indicates ballistic electron transport. The spacing of the FP oscillations are found to depend on the charge density in a manner that agrees with theoretical modeling based on Klein tunneling of Dirac particles. The ultra-low residual charge, the FP oscillations with density dependent period, and the high mobility prove excellent quality of our suspended graphene devices. Owing to its simplicity, scalability and robustness, this fabrication scheme enhances possibilities for production of suspended, high-quality, two-dimensional-material structures for novel electronic applications., Comment: 11 pages, 5 figures

We present a lumped-element Josephson parametric amplifier (JPA) utilizing a straightforward fabrication process involving a single electron beam lithography step followed by double-angle evaporation of aluminum and in-situ oxidation. The Josephson junctions forming the SQUID are fabricated using bridgeless shadow evaporation technique, which enables reliable fabrication of relatively large ($\sim9~\mathrm{\mu m^2}$) junctions. Our strongly coupled flux-pumped JPA achieves 20~dB gain with 95~MHz bandwidth around 5~GHz, while the center frequency is tunable by more than 1~GHz, with the additional possibility for rapid tuning by varying the pump frequency alone. Analytical calculations based on the input-output theory reproduce our measurement results closely., Comment: pages 11, 5 figures

Defects in hexagonal boron nitride (h-BN) layer can facilitate tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides $IV$ characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5$\times$$ 10^-5$e/$\sqrt Hz$ at 10 $Hz$, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in electrochemical potential, we achieve a sensitivity of 0.8$\mu$eV/$\sqrt Hz$.

We demonstrate the fabrication of $\sim$1.08 $\mu$m deep microfluidic cavities with characteristic size as large as 7 mm $\times$ 11 mm or 11 mm diameter, using a silicon$-$glass anodic bonding technique that does not require posts to act as separators to define cavity height. Since the phase diagram of $^3$He is significantly altered under confinement, posts might act as pinning centers for phase boundaries. The previous generation of cavities relied on full wafer-bonding which is more prone to failure and requires dicing post-bonding, whereas the these cavities are made by bonding a pre-cut piece of Hoya SD-2 glass to a patterned piece of silicon in which the cavity is defined by etching. Anodic bonding was carried out at 425 $^{\circ}$C with 200 V, and we observe that pressurizing the cavity to failure ($>$ 30 bar pressure) results in glass breaking, rather than the glass-silicon bond separation. In this article, we discuss the detailed fabrication of the cavity, its edges, and details of the junction between the coin silver fill line and the silicon base of the cavity that enables a low internal-friction joint. This feature is important for mass coupling torsional oscillator experimental assays of the superfluid inertial contribution where a high quality factor ($Q$) improves frequency resolution. The surface preparation that yields well-characterized smooth surfaces to eliminate pinning sites, the use of transparent glass as a cover permitting optical access, low temperature capability and attachment of pressure-capable ports for fluid access may be features that are important in other applications., Comment: 10 figures

We have investigated the cross-over from Zener tunneling of single charge carriers to avalanche type of bunched electron transport in a suspended graphene Corbino disk in the zeroth Landau level. At low bias, we find a tunneling current that follows the gyrotropic Zener tunneling behavior. At larger bias, we find avalanche type of transport that sets in at a smaller current the larger the magnetic field is. The low-frequency noise indicates strong bunching of the electrons in the avalanches. On the basis of the measured low-frequency switching noise power, we deduce the characteristic switching rates of the avalanche sequence. The simultaneous microwave shot noise measurement also reveals intrinsic correlations within the avalanche pulses and indicate decrease of correlations with increasing bias., Comment: 17 pages, 7 figures

We investigate the nonlinear mechanics of a bimetallic, optically absorbing SiN-Nb nanowire in the presence of incident laser light and a reflecting Si mirror. Situated in a standing wave of optical intensity and subject to photothermal forces, the nanowire undergoes self-induced oscillations at low incident light thresholds of $<1\, \rm{\mu W}$ due to engineered strong temperature-position ($T$-$z$) coupling. Along with inducing self-oscillation, laser light causes large changes to the mechanical resonant frequency $\omega_0$ and equilibrium position $z_0$ that cannot be neglected. We present experimental results and a theoretical model for the motion under laser illumination. In the model, we solve the governing nonlinear differential equations by perturbative means to show that self-oscillation amplitude is set by the competing effects of direct $T$-$z$ coupling and $2\omega_0$ parametric excitation due to $T$-$\omega_0$ coupling. We then study the linearized equations of motion to show that the optimal thermal time constant $\tau$ for photothermal feedback is $\tau \to \infty$ rather than the widely reported $\omega_0 \tau = 1$. Lastly, we demonstrate photothermal quality factor ($Q$) enhancement of driven motion as a means to counteract air damping. Understanding photothermal effects on micromechanical devices, as well as nonlinear aspects of optics-based motion detection, can enable new device applications as oscillators or other electronic elements with smaller device footprints and less stringent ambient vacuum requirements., Comment: New references added

The influence of confinement on the topological phases of superfluid 3He is studied using the torsional pendulum method. We focus on the phase transition between the chiral A-phase and the time-reversal-invariant B-phase, motivated by the prediction of a spatiallymodulated (stripe) phase at the A-B phase boundary. We confine superfluid 3He to a single 1.08 {\mu}m thick nanofluidic cavity incorporated into a high-precision torsion pendulum, and map the phase diagram between 0.1 and 5.6 bar. We observe only small supercooling of the A-phase, in comparison to bulk or when confined in aerogel. This has a non-monotonic pressure dependence, suggesting that a new intrinsic B-phase nucleation mechanism operates under confinement, mediated by the putative stripe phase. Both the phase diagram and the relative superfluid fraction of the A and B phases, show that strong coupling is present at all pressures, with implications for the stability of the stripe phase., Comment: 6 figures, 1 table + supplemental information

We study the effect of localized Joule heating on the mechanical properties of doubly clamped nanowires under tensile stress. Local heating results in systematic variation of the resonant frequency; these frequency changes result from thermal stresses that depend on temperature dependent thermal conductivity and expansion coefficient. The change in sign of the linear expansion coefficient of InAs is reflected in the resonant response of the system near a bath temperature of 20 K. Using finite element simulations to model the experimentally observed frequency shifts, we show that the thermal conductivity of a nanowire can be approximated in the 10-60 K temperature range by the empirical form $\kappa=b$T W/mK, where the value of $b$ for a nanowire was found to be $b=0.035$ W/mK$^2$, significantly lower than bulk values. Also, local heating allows us to independently vary the temperature of the nanowire relative to the clamping points pinned to the bath temperature. We suggest a loss mechanism (dissipation $\sim10^{-4}-10^{-5}$) originating from the interfacial clamping losses between the metal and the semiconductor nanostructure.

A major achievement of the past decade has been the realization of macroscopic quantum systems by exploiting interactions between optical cavities and mechanical resonators. In these systems, phonons are coherently annihilated or created in exchange for photons. Similar phenomena have recently been observed through "phonon cavity" coupling -- energy exchange between modes of a single system as mediated by intrinsic material nonlinearity. To date, this has been demonstrated primarily for bulk crystalline, high-quality-factor (Q>100,000) mechanical systems operated at cryogenic temperatures. Here we propose graphene as an ideal candidate for the study of such nonlinear mechanics. The large elastic modulus of this material and capability for spatial symmetry breaking via electrostatic forces is expected to generate a wealth of nonlinear phenomena, including tunable inter-modal coupling. We have fabricated circular graphene membranes and report strong phonon cavity effects at room temperature, despite the modest Q (~100) of this system. We observe both amplification into parametric instability ("mechanical lasing") and cooling of Brownian motion in the fundamental mode through excitation of cavity sidebands. Furthermore, we characterize quenching of these parametric effects at large vibrational amplitudes, offering a window on the all-mechanical analogue of cavity optomechanics, where observation of such effects has proven elusive.

A graphene channel field-effect biosensor is demonstrated for detecting the binding of double-stranded DNA and poly-l-lysine. Sensors consist of CVD graphene transferred using a clean, etchant-free transfer method. The presence of DNA and poly-l-lysine are detected by the conductance change of the graphene transistor. A readily measured shift in the Dirac Voltage (the voltage at which the graphenes resistance peaks) is observed after the graphene channel is exposed to solutions containing DNA or poly-l-lysine. The Dirac voltage shift is attributed to the binding/unbinding of charged molecules on the graphene surface. The polarity of the response changes to positive direction with poly-l-lysine and negative direction with DNA. This response results in detection limits of 8 pM for 48.5 kbp DNA and 11 pM for poly-l-lysine. The biosensors are easy to fabricate, reusable and are promising as sensors of a wide variety of charged biomolecules

We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the non-linear response of the resonators studied. In addition this technique enables the study of variation of thermal strains due to heating in nanostructures

We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 +- 340 Ohm-micrometer. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.