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Physical unclonable functions (PUFs) are of immense potential in authentication scenarios for Internet of Things (IoT) devices. For creditable and lightweight PUF applications, key attributes, including low power, high reconfigurability and large challenge-response pair (CRP) space, are desirable. Here, we report a ferroelectric field-effect transistor (FeFET)-based strong PUF with high reconfigurability and low power, which leverages the FeFET cycle-to-cycle variation throughout the workflow and introduces charge-domain in-memory computing. The proposed PUF cells are fabricated at 28 nm node, and the experimental measurements reveal high uniformity, uniqueness and repeatability. Remarkably, our PUF achieves near-ideal reconfigurability and ultra-low 1.89fJ per bit readout energy, significantly outperforming the state-of-the-art PUFs. Furthermore, we show that the PUF is robust against parameter variations and resilient to machine learning (ML) attacks. These performances highlight the great promise of the FeFET-based strong PUF as a feasible IoT security solution. Physical unclonable functions (PUFs) are important in authentication applications for Internet of Things devices. This work reports a ferroelectric field-effect transistor-based strong PUF utilizing the transistor cycle-to-cycle variation and verifies its feasibility using 28 nm HKMG technology. [ABSTRACT FROM AUTHOR]

The impact of Gd addition on the structural and magnetic properties of L 1 0 -FePt alloy thin films, which were sputter-deposited on MgO(001) substrates at 800 ° C, was investigated. A rapid deterioration of L 1 0 chemical ordering along with a strong amorphization effect is observed with addition of Gd. At more than 20 at. % Gd, additional crystalline phases occur. Due to the diminishing L 1 0 chemical order, the perpendicular magnetic anisotropy (PMA) gets strongly reduced from about 3 down to 1 MJ/m 3 with addition of 14 at. % Gd. For higher Gd concentrations, the easy axis of magnetization turns fully in-plane due to dominating magnetic shape anisotropy. Furthermore, the saturation magnetization gets reduced with Gd addition due to the antiferromagnetic coupling between the Fe and Gd magnetic moments. Also, the Curie temperature can be lowered. Interestingly, with addition of Gd, a change in film morphology takes place, changing from an isolated island structure to a more continuous film morphology, which is of particular interest for samples with low Gd concentration as these films exhibit still strong PMA but rather low coercive fields. [ABSTRACT FROM AUTHOR]