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The applications of hyperspectral imaging across disciplines such as healthcare, automobiles, forensics, and astronomy are constrained by the requirement for intricate filters and dispersion lenses. By utilization of devices with engineered spectral responses and advanced signal processing techniques, the spectral imaging process can be made more approachable across various fields. We propose a spectral response design method employing photon-trapping surface textures (PTSTs), which eliminates the necessity for external diffraction optics and facilitates system miniaturization. We have developed an analytical model to calculate electromagnetic wave coupling using the effective refractive index of silicon in the presence of PTST. We have extensively validated the model against simulations and experimental data, ensuring the accuracy of our predictions. We observe a strong linear relationship between the peak coupling wavelength and the PTST period along with a moderate proportional relation to the PTST diameters. Additionally, we identify a significant correlation between inter-PTST spacing and wave propagation modes. The experimental validation of the model is conducted using PTST-equipped photodiodes fabricated through complementary metal-oxide-semiconductor-compatible processes. Further, we demonstrate the electrical and optical performance of these PTST-equipped photodiodes to show high speed (response time: 27 ps), high gain (multiplication gain, M: 90), and a low operating voltage (breakdown voltage: ∼ 8.0 V). Last, we utilize the distinctive response of the fabricated PTST-equipped photodiode to simulate hyperspectral imaging, providing a proof of principle. These findings are crucial for the progression of on-chip integration of high-performance spectrometers, guaranteeing real-time data manipulation, and cost-effective production of hyperspectral imaging systems.

For InP/InGaAs avalanche photodiodes (APD), there are three important performance parameters: mean gain, excess noise factor, and dark current. Reducing excess noise and dark current is an effective way to achieve higher sensitivity and improve the performance of an APD. In this article, an interposed layer is introduced into the InP/InGaAs avalanche photodiode structure. The results considering dead space indicate that the thin interposed layer structure has lower excess noise factor and dark current at the same mean gain $< G>$ compared with conventional APD structure, which is reduced by ≈34% and 11%, respectively, at mean gain =10$< G> = 10$. This provides a feasible idea for the construction of high‐performance APD. [ABSTRACT FROM AUTHOR]

Meta-heuristic algorithms, especially evolutionary algorithms, have been frequently used to find near optimal solutions to combinatorial optimization problems. The evaluation of such algorithms is often conducted through comparisons with other algorithms on a set of benchmark problems. However, even if one algorithm is the best among all those compared, it still has difficulties in determining the true quality of the solutions found because the true optima are unknown, especially in dynamic environments. It would be desirable to evaluate algorithms not only relatively through comparisons with others, but also in absolute terms by estimating their quality compared to the true global optima. Unfortunately, true global optima are normally unknown or hard to find since the problems being addressed are NP-hard. In this paper, instead of using true global optima, lower bounds are derived to carry out an objective evaluation of the solution quality. In particular, the first approach capable of deriving a lower bound for dynamic capacitated arc routing problem (DCARP) instances is proposed, and two optimization algorithms for DCARP are evaluated based on such a lower bound approach. An effective graph pruning strategy is introduced to reduce the time complexity of our proposed approach. Our experiments demonstrate that our approach provides tight lower bounds for small DCARP instances. Two optimization algorithms are evaluated on a set of DCARP instances through the derived lower bounds in our experimental studies, and the results reveal that the algorithms still have room for improvement for large complex instances. [ABSTRACT FROM AUTHOR]

This paper presents an 8 × 8 channel optoelectronic readout array (ORA) realized in the TSMC 180 nm 1P6M RF CMOS process for the applications of short-range light detection and ranging (LiDAR) sensors. We propose several circuit techniques in this work, including an amplitude-to-voltage (A2V) converter that reduces the notorious walk errors by intensity compensation and a time-to-voltage (T2V) converter that acquires the linear slope of the output signals by exploiting a charging circuit, thus extending the input dynamic range significantly from 5 μApp to 1.1 mApp, i.e., 46.8 dB. These results correspond to the maximum detection range of 8.2 m via the action of the A2V converter and the minimum detection range of 56 cm with the aid of the proposed T2V converter. Optical measurements utilizing an 850 nm laser diode confirm that the proposed 8 × 8 ORA with 64 on-chip avalanche photodiodes (APDs) can successfully recover the narrow 5 ns light pulses even at the shortest distance of 56 cm. Hence, this work provides a potential CMOS solution for low-cost, low-power, short-range LiDAR sensors. [ABSTRACT FROM AUTHOR]

Photodetectors play a critical role in space lidars designed for scientific investigations from orbit around planetary bodies. The detectors must be highly sensitive due to the long range of measurements and tight constraints on the size, weight, and power of the instrument. The detectors must also be space radiation tolerant over multi-year mission lifetimes with no significant performance degradation. Early space lidars used diode-pumped Nd:YAG lasers with a single beam for range and atmospheric backscattering measurements at 1064 nm or its frequency harmonics. The photodetectors used were single-element photomultiplier tubes and infrared performance-enhanced silicon avalanche photodiodes. Space lidars have advanced to multiple beams for surface topographic mapping and active infrared spectroscopic measurements of atmospheric species and surface composition, which demand increased performance and new capabilities for lidar detectors. Higher sensitivity detectors are required so that multi-beam and multi-wavelength measurements can be performed without increasing the laser and instrument power. Pixelated photodetectors are needed so that a single detector assembly can be used for simultaneous multi-channel measurements. Photon-counting photodetectors are needed for active spectroscopy measurements from short-wave infrared to mid-wave infrared. HgCdTe avalanche photodiode arrays have emerged recently as a promising technology to fill these needs. This paper gives a review of the photodetectors used in past and present lidars and the development and outlook of HgCdTe APD arrays for future space lidars. [ABSTRACT FROM AUTHOR]

When operating in space, on-board Silicon Geiger-Mode Avalanche Photodiodes (GM-APDs) are exposed to radiation damage that result in an increase in dark count rates. Thermal annealing has been found to mitigate the damage, although prior studies have largely focused on annealing following a single session of proton irradiation. This work reports that thermal annealing can be performed simply with the built-in thermo-electric coolers of the GM-APDs. Annealing was also done in 10 min intervals for a clearer view of the recovery curve. Mitigation of damage from repeated γ radiation was observed from the: (1) halving of the increase in dark count rates on average and (2) outperformance of room temperature annealing ( 25 ∘ C) by 33 % . Additionally, we show that heavy doses of γ radiation (21 krad) have a probability of causing Random Telegraph Signals in GM-APDs that can be suppressed by lowering the operating temperature. [ABSTRACT FROM AUTHOR]

Detecting extremely low light signals is the basis of many scientific experiments and measurement techniques. For many years, a high-voltage photomultiplier has been the only practical device used in the visible and infrared spectral range. However, such a solution is subject to several inconveniences, including high production costs, the requirements of a supply voltage of several hundred volts, and a high susceptibility to mechanical damage. This paper presents two detection systems based on avalanche photodiodes, one cooled and the second operating at room temperature, in terms of their potential application in thermoluminescent dosimeter units. The results show that the detection system with an uncooled photodiode may successfully replace the photomultiplier tube commonly used in practice. [ABSTRACT FROM AUTHOR]

The gain in short-wave infrared and mid-wave infrared HgCdTe avalanche photodiodes (APDs) with large diameters has been analyzed using an already established model based on an empirical expression proposed by Okuto–Crowell (OC) and a new model derived for the impact ionization in HgCdTe. This model is based on a simplified but physical description of the carrier dynamics during the multiplication. It is shown that OC model has limitations in giving a precise description of the measured avalanche gains, and that is difficult, in view of present available data, to derive a universal expression for the model parameters to predict the avalanche gain in HgCdTe APDs as a function of the Cd composition, operating temperature, and multiplication layer geometry. The new model is shown to give a better fit of the gain data, associated with a scaling of the model parameters with the band gap. [ABSTRACT FROM AUTHOR]

The short-wave infrared (SWIR) wavelength, especially 1.55 μm, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain, which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 μm light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope and transmission electron microscope. Also, the current–voltage (I–V) of the p+Si/n−GaAsSb heterojunction shows the rectifying characteristics with an ideality factor of 1.8. The I–V tests across multiple devices confirm high consistency and yield. Furthermore, the x-ray photoelectron spectroscopy measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV, which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies. [ABSTRACT FROM AUTHOR]

Avalanche photodiodes (APDs) produce noise during operation, which affects the device performance. However, the previous research on its noise is mainly theoretical analysis and is only reflected as optical noise. Therefore, according to the characteristics of APD material and the mechanism of noise generation, the main noise of the device is analyzed in this paper. First, the test method of noise in APDs is established, including testing of dark noise, optical noise, and multiplication noise in high frequency bands. The main noises in APDs are 1/f noise, thermal noise, shot noise, generation recombination noise, and multiplication shot noise, and shot noise is suppressed by Fermi–Dirac distribution and Coulomb action. Second, the reliability of APDs is evaluated by measuring and analyzing the noise parameters of the device through thermal aging experiments. It is concluded that the defects introduced by thermal aging can be reflected by the change in noise, which is consistent with the results in the literature. This method can comprehensively obtain the noise in APDs, which is helpful to improve the working efficiency, life, and reliability of the device. [ABSTRACT FROM AUTHOR]

An array of compact, high-bandwidth (>200 MHz) and low-cost optical photodiodes has been developed and implemented on the PHASe MApping (PHASMA) experiment. Using purpose-built electronics, an array of 16 photodetectors was constructed and used to monitor broadband (1–5 MHz) fluctuations in light intensity emitted by flux ropes undergoing electron-only magnetic reconnection. These measurements reveal a swath of oscillatory behavior, including wave propagation inward toward the diffusion region at approximately the local electron Alfvén speed. Custom 3D-printed collection optics and mounting hardware allow quick reconfiguration of the array for radial or axial measurements. The electronics design is flexible enough to be used with other current-sourcing transducers, such as avalanche photodiodes; silicon photomultipliers; and infrared, x-ray, and UV photodiodes. A noise-rejecting electrical layout allows for low-noise operation close to pulsed plasma discharges. A 16-channel, 64-pixel tomographic array was constructed and initial reconstructions are presented. [ABSTRACT FROM AUTHOR]

Optical biosensors have emerged as a powerful tool in analytical biochemistry, offering high sensitivity and specificity in the detection of various biomolecules. This article explores the advancements in the integration of optical biosensors with microfluidic technologies, creating lab-on-a-chip (LOC) platforms that enable rapid, efficient, and miniaturized analysis at the point of need. These LOC platforms leverage optical phenomena such as chemiluminescence and electrochemiluminescence to achieve real-time detection and quantification of analytes, making them ideal for applications in medical diagnostics, environmental monitoring, and food safety. Various optical detectors used for detecting chemiluminescence are reviewed, including single-point detectors such as photomultiplier tubes (PMT) and avalanche photodiodes (APD), and pixelated detectors such as charge-coupled devices (CCD) and complementary metal–oxide–semiconductor (CMOS) sensors. A significant advancement discussed in this review is the integration of optical biosensors with pixelated image sensors, particularly CMOS image sensors. These sensors provide numerous advantages over traditional single-point detectors, including high-resolution imaging, spatially resolved measurements, and the ability to simultaneously detect multiple analytes. Their compact size, low power consumption, and cost-effectiveness further enhance their suitability for portable and point-of-care diagnostic devices. In the future, the integration of machine learning algorithms with these technologies promises to enhance data analysis and interpretation, driving the development of more sophisticated, efficient, and accessible diagnostic tools for diverse applications. [ABSTRACT FROM AUTHOR]

Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τq) is not affected by the compensation capacitance variation, while an increase of about 30% in the τq is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5–0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD. [ABSTRACT FROM AUTHOR]

This paper presents a novel power-efficient topology for receivers in short-range LiDAR sensors. Conventionally, LiDAR sensors exploit complex time-to-digital converters (TDCs) for time-of-flight (ToF) distance measurements, thereby frequently leading to intricate circuit designs and persistent walk error issues. However, this work features a fully differential trans-impedance amplifier with on-chip avalanche photodiodes as optical detectors so that the need of the following post-amplifiers and output buffers can be eliminated, thus considerably reducing power consumption. Also, the combination of amplitude-to-voltage (A2V) and time-to-voltage (T2V) converters are exploited to replace the complicated TDC circuit. The A2V converter efficiently processes weak input photocurrents ranging from 1 to 50 μApp which corresponds to a maximum distance of 22.8 m, while the T2V converter handles relatively larger photocurrents from 40 μApp to 5.8 mApp for distances as short as 30 cm. The post-layout simulations confirm that the proposed LiDAR receiver can detect optical pulses over the range of 0.3 to 22.8 m with a low power dissipation of 10 mW from a single 1.8 V supply. This topology offers significant improvements in simplifying the receiver design and reducing the power consumption, providing a more efficient and accurate solution that is highly suitable for short-range LiDAR sensor applications. [ABSTRACT FROM AUTHOR]

Abstract When operating in space, on-board Silicon Geiger-Mode Avalanche Photodiodes (GM-APDs) are exposed to radiation damage that result in an increase in dark count rates. Thermal annealing has been found to mitigate the damage, although prior studies have largely focused on annealing following a single session of proton irradiation. This work reports that thermal annealing can be performed simply with the built-in thermo-electric coolers of the GM-APDs. Annealing was also done in 10 min intervals for a clearer view of the recovery curve. Mitigation of damage from repeated $$\gamma $$ γ radiation was observed from the: (1) halving of the increase in dark count rates on average and (2) outperformance of room temperature annealing ( $$25\,^{\circ }$$ 25 ∘ C) by 33 $$\%$$ % . Additionally, we show that heavy doses of $$\gamma $$ γ radiation (21 krad) have a probability of causing Random Telegraph Signals in GM-APDs that can be suppressed by lowering the operating temperature.

Bandwidth enhancement for avalanche photodiodes (APDs) has been a focal point of research. This paper designs, fabricates and demonstrates a novel meandering coplanar waveguide electrode to effectively introduce the inductive peaking effect into APDs, resonating with internal capacitance to enhance bandwidth. Initially, an analytical model is employed to scrutinize the influence of the inductance peaking effect on the photodiode bandwidth. Various dimensions of meandering electrodes are simulated and optimized to introduce suitable inductance values into APDs. Fabricated APDs with different electrodes show measured results consistent with simulations. Compared to conventional 50Ω electrodes, the meandering electrode significantly increases the bandwidth of APDs from 8.5 GHz to over 15 GHz. Lastly, a detailed analysis of the APD measured results is conducted using an equivalent circuit model, the inductance introduced by the proposed electrode is approximately 980 pH. This study can extend to other types of photodiode, offering a novel and effective high-performance photodiode design method. [ABSTRACT FROM AUTHOR]

Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of M ~ 190 at a low bias of V b i a s = −   2.5   V under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of R > 140   A / W is also achieved at the low bias of V b i a s = − 2.5   V . This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP). [ABSTRACT FROM AUTHOR]

Background: Activated phosphoinositide 3-kinase delta syndrome (APDS) [OMIM 615513] is an inborn error of immunity with autosomal dominant inheritance caused by a pathogenic variant in the PIK3CD gene. The prevalence ratio of APDS is < 1: 1,000,000 newborns. The main clinical features of APDS are sinopulmonary infections, benign lymphoproliferation, autoinflammatory disease, and a major risk of lymphoid neoplasms. Clinical case: A 17-year-old female with a history of pneumonia at 9 months of age subsequently developed recurrent respiratory tract infections, bronchiectasis, perforated otitis media, unilateral tonsillar lymphoid hyperplasia, pansinusitis, recurrent oral candidiasis, and chronic rhinitis. Laboratory studies reported persistent leukopenia and lymphopenia, low CD4 lymphocyte subpopulation, and persistently elevated immunoglobulin M immunoglobulin studies with values up to 692 mg/dL. An inborn error of immunity next-generation sequencing and multiplex ligation-dependent probe amplification analysis detected a heterozygous pathogenic variant in the PIK3CD gene, compatible with APDS. Treatment with monthly injectable gamma globulin and prophylactic antibiotics was started, allowing better control of the infectious processes. Conclusion: This is the second case of APDS reported in Mexico in the literature. It is important to be aware of this condition to make a timely diagnosis, which requires a high clinical suspicion and immunological and genetic studies to provide adequate treatment and prevent complications. [ABSTRACT FROM AUTHOR]

Single photon emission tomography/computed tomography (SPECT/CT) is a mature imaging technology with a dynamic role in the diagnosis and monitoring of a wide array of diseases. This paper reviews the technological advances, clinical impact, and future directions of SPECT and SPECT/CT imaging. The focus of this review is on signal amplifier devices, detector materials, camera head and collimator designs, image reconstruction techniques, and quantitative methods. Bulky photomultiplier tubes (PMTs) are being replaced by position-sensitive PMTs (PSPMTs), avalanche photodiodes (APDs), and silicon PMs to achieve higher detection efficiency and improved energy resolution and spatial resolution. Most recently, new SPECT cameras have been designed for cardiac imaging. The new design involves using specialised collimators in conjunction with conventional sodium iodide detectors (NaI(Tl)) or an L-shaped camera head, which utilises semiconductor detector materials such as CdZnTe (CZT: cadmium–zinc–telluride). The clinical benefits of the new design include shorter scanning times, improved image quality, enhanced patient comfort, reduced claustrophobic effects, and decreased overall size, particularly in specialised clinical centres. These noticeable improvements are also attributed to the implementation of resolution-recovery iterative reconstructions. Immense efforts have been made to establish SPECT and SPECT/CT imaging as quantitative tools by incorporating camera-specific modelling. Moreover, this review includes clinical examples in oncology, neurology, cardiology, musculoskeletal, and infection, demonstrating the impact of these advancements on clinical practice in radiology and molecular imaging departments. [ABSTRACT FROM AUTHOR]

With the continuous increase in data traffic and enormous consumption of data in terms of video on demand services and cloud computing, there is an increasing demand for high speed and high sensitivity short reach receivers for passive optical networks (PON) access network which are point to multi‐point networks. Avalanche photodiodes (APD) are the standard receivers in PON networks due to their high sensitivity and low cost. However, it is currently not clear if they can provide high bandwidth above 40 GHz with good performance (gain, noise, etc.). Furthermore, standard PIN photodiodes do not provide sufficient sensitivity for PON networks. Therefore, in this article a SOA‐UTC receiver is proposed, which is a photonic integrated circuit (PIC) comprising a semiconductor optical amplifier (SOA) for optical preamplification and a high‐speed uni‐travelling‐carrier (UTC) photodiode for opto‐electronic conversion. A very high responsivity of 140 A W−1 is demonstrated, with a polarization dependent loss (PDL) around 1 dB and a 3 dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit s−1 capacity and above. [ABSTRACT FROM AUTHOR]

The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theory of APDs, suggesting that APD linearity can be enhanced by suppressing the electrode size effect. A physical model was developed to explain this phenomenon, which is attributed to charge accumulation at the edge of the contact layer. Therefore, we proposed an improved APD design that incorporates an additional gap layer and a buffer layer to stabilize the internal gain under high-current-density conditions, thereby enhancing linearity. Our improved APD design increases the linear threshold for optical input power by 4.46 times. This study not only refines the theoretical model for APD linearity but also opens new pathways for improving the linearity of high-speed optoelectronic detectors. [ABSTRACT FROM AUTHOR]

We propose a broadband noise test method (10 Hz–1 MHz) using a direct power method to measure the excess noise of InGaAs/InP avalanche photodiodes (APDs) with a separate absorption, grading, charge, and multiplication structure. By this means, the impact ionization coefficient ratio (the k value) can be accurately determined. Compared with previous studies, this method can distinguish between low-frequency noise and excess noise, so for an appropriate high frequency spectral range, the excess noise can be analyzed without mixing in other noise information. Three different APDs fabricated in-house with different diameters (12, 25, and 60 µm) were investigated using the above-mentioned method under temperatures varying from −10 to −40 °C. Our findings showed that the k value of the APDs decreased as the temperature decreased. When the temperature decreased to −40 °C, the k value of the 12, 25, and 60 µm diameter diodes was as low as 0.1, 0.3, and 0.2, respectively. The measurement results are consistent with our device design and not only provide useful information for the future selection of device materials and structures but also demonstrate the feasibility of the broadband noise measurement method in the accurate determination of the k value. It indicates that low excess noise can be achieved by utilizing the temperature dependence of k. [ABSTRACT FROM AUTHOR]

The amorphous avalanche photodiodes (a‐Si APD) have been first introduced into flat‐panel detector. The sensor with a‐Si APD indicate much higher sensitivity than normal PIN PD devices. The ultrasensitive image sensor with a‐Si APD can realize optical fingerprint identification under COE OLED screen with very low transmittance. And the flat‐panel X‐ray detector (FPXD) with a‐Si APD can reduce radiation dose significantly because of its much higher sensitivity compared to traditional FPXD products. [ABSTRACT FROM AUTHOR]

The document "Advanced Nanomaterials in Biomedical Applications (2nd Edition)" explores the transformative role of nanotechnology in medicine, focusing on drug delivery systems, targeted imaging, regenerative medicine, and diagnostic tools. The Special Issue includes articles on innovative drug delivery strategies using polymeric microsponges, microconductometric sensors for ethanol detection, vaporization dynamics of perfluorocarbon nanodroplets, nanoparticle-based therapy for endometriosis, and advancements in silicon-based avalanche photodiodes for medical imaging. The research highlights the potential of nanomaterials to enhance therapeutic efficacy, improve patient outcomes, and revolutionize healthcare practices. [Extracted from the article]

Since the advent of impact ionization and its application in avalanche photodiodes (APD), numerous application goals have contributed to steady improvements over several decades. The characteristic high operating voltages and the need for thick absorber layers (π-layers) in the Si-APDs pose complicated design and operational challenges in complementary metal oxide semiconductor integration of APDs. In this work, we have designed a sub-10 V operable Si-APD and epitaxially grown the stack on a semiconductor-on-insulator substrate with a submicron thin π-layer, and we fabricated the devices with integrated photon-trapping microholes (PTMH) to enhance photon absorption. The fabricated APDs show a substantially low prebreakdown leakage current density of ∼50 nA/mm2. The devices exhibit a consistent ∼8.0 V breakdown voltage with a multiplication gain of 296.2 under 850 nm illumination wavelength. We report a ∼5× increase in the EQE at 850 nm by introducing the PTMH into the device. The enhancement in the EQE is evenly distributed across the entire wavelength range (640-1100 nm). The EQE of the devices without PTMH (flat devices) undergo a notable oscillation caused by the resonance at specific wavelengths and show a strong dependency on the angle of incidence. This characteristic dependency is significantly circumvented by introducing the PTMH into the APD. The devices exhibit a significantly low off-state power consumption of 0.41 μW/mm2 and stand fairly well against the state-of-the-art literature. Such high efficiency, low leakage, low breakdown voltage, and extremely low-power Si-APD can be easily incorporated into the existing CMOS foundry line and enable on-chip, high-speed, and low-photon count detection on a large scale.

Mid-wavelength infrared HgCdTe electron-initiated avalanche photodiodes (e-APDs) have presented excellent performances on resolving and counting photons. Aiming at low flux, the readout integrated circuit noise can be significantly reduced by certain device gain, and very low excess noise of HgCdTe e-APDs gives the opportunity for noise equivalent photon (NEPh) to be 1. Therefore, the main issue for signal-to-noise ratio of HgCdTe APD is gain normalized dark current density (GNDCD) at high reverse bias. In this work, the electric field distribution is optimized by designing the mesa device structure to suppress the tunneling current at high operating voltage. Furthermore, etching technology combining dry etching and wet etching and passivation technology based on plasma enhanced atomic layer deposition were used to reduce surface leakage current. Finally, 20 μm pitch 128 × 128 array HgCdTe APDs for cutoff wavelength 4.32 μm at 80 K corresponding to compositions xCd = 0.326 were fabricated, the measured GNDCD of the test unit is about 1.5–10 × 10−9 A/cm2 at 0–13 V, and very low excess noise guaranteed the NEPh to be 2.0 at gain = 93 and 1.6 at gain = 193. [ABSTRACT FROM AUTHOR]

The performance of long-wave infrared (LWIR) = 0.22 HgCdTe avalanche photodiodes (APDs) was presented. The dark currentvoltage characteristics at temperatures 200 K, 230 K, and 300 K were measured and numerically simulated. Theoretical modeling was performed by the numerical Apsys platform (Crosslight). The effects of the tunneling currents and impact ionization in HgCdTe APDs were calculated. Dark currents exhibit peculiar features which were observed experimentally. The proper agreement between the theoretical and experimental characteristics allowed the determination that the material parameters of the absorber were reached. The effect of the multiplication layer profile on the detector characteristics was observed but was found to be insignificant. [ABSTRACT FROM AUTHOR]

In this research, we have examined the performance of a link in an underwater visible light communication (UVLC) system using an intensity-modulated/direct detection (IMDD) system. Underwater visible light communication (UVLC) plays a pivotal role in shaping the future of underwater wireless networks. In most cases, the performance of UVLC links is adversely affected by factors such as atmospheric attenuation, scattering, and turbulence, which mainly affect high data rate distance communication and the bit-error rate (BER) of the UVLC system. The utilization of highly sensitive Avalanche Photodiodes (APD) represents one of the mitigation techniques employed to alleviate the influence of atmospheric attenuation, scattering, and turbulence in UVLC systems. Both Avalanche Photodiodes (APD) and PIN photodiodes are employed as strategies to mitigate the adverse effects resulting from atmospheric attenuation, scattering, and turbulence in UVLC systems, which hinders long-distance communication with high data rate. We conducted a performance comparison, evaluating the Bit Error Rate (BER) at various data rates, for both PIN and Avalanche photodiodes. As the data rate increases, the achievable communication link distance decreases, while maintaining the targeted BER of 10 - 5 . Our observations indicate that the Avalanche Photodiode (APD) consistently exhibits superior performance when compared to the PIN photodiode. [ABSTRACT FROM AUTHOR]

A random ionization-time model is introduced to compute the avalanche time of double carrier multiplication in heterojunction avalanche photodiodes (APDs). The Monte Carlo method is employed to determine the distribution of carriers for both electron- and hole- initiated multiplications in the GaN/4H–SiC heterojunction APDs of multiplication widths, w = 0.1 and 0.2 μm, incorporating of dead space and hetero-interface effects at high electric field region with respect to time. The carriers that are injected into the GaN layer will undergo multiplication based on material-dependent electron and hole impact ionization coefficients αGaN and βGaN, then cross the heterojunction based on the probability and followed by the multiplication based on material dependent α4H–SiC and β4H–SiC in the 4H–SiC layer. The avalanche time is calculated from the instant the parent carrier enters the multiplication region until all carriers leave the multiplication region. Our model is able to show the distribution of carriers with respect to space and time, inclusive of the presence of secondary carriers due to different groups of feedback carriers and dead time. Due to potential difference at hetero-interface, the avalanche time of the GaN/4H–SiC heterojunction APDs is less than that of the GaN and 4H–SiC homojunction APDs of the same multiplication width; hence, they are good candidates for sensing and switching devices. [ABSTRACT FROM AUTHOR]

Visible light communication is seen as a crucial technology within optical wireless communication systems. The technology of vehicular visible light communication holds significant importance in the context of connected vehicles. This technology can serve as a supplementary solution to vehicular systems that are based on radio frequency. In this paper, the authors conduct an analysis of the performance of both line-of-sight and non-line-ofsight vehicle-to-vehicle visible light communication systems under the effect of artificial light source and weather conditions, including clear, hazy, and foggy weather. A practical vehicular laser diode, a street lamp, and an avalanche photodiode are used to design the proposed system model. Performance enhancement for the proposed system is achieved using an optical amplifier at the receiving end. An artificial light source of light-emitting diode Corn-type is used to represent an ambient artificial light source. Different metrics such as quality factor and bit error rate are used to assess the system performance of the non-lineof-sight-vehicular communication system. The proposed line-of-sight model achieves a data rate of 25 Gbps, supporting a distance of 80 m under clear sky and hazy atmospheric conditions. For foggy weather, an attainable link distance of 70 m is achieved. The achieved results emphasize the suitability of the suggested models for vehicular applications in real world environment. [ABSTRACT FROM AUTHOR]

The issue of destructive breakdown and high dark current in AlGaN ultraviolet avalanche photodiodes has conventionally been attributed to material defects, yet direct evidence supporting this claim has been absent. Examining damaged devices that experienced destructive breakdown revealed an intriguing finding: post-treatment with a potent alkali resulted in the emergence of corrosion pits on the device's surface. Subsequently, a dry etching process was implemented in the targeted area to eliminate the corrosion pit. Remarkably, the current–voltage measurement subsequent to this treatment showcased a complete restoration of the damaged device's previous performance. This unequivocally indicates that the destructive breakdown was localized, and the point of punch-through could be precisely identified through the corrosion pit. Consequently, it is now firmly believed that material defects constitute the primary cause of destructive breakdown in these instances. [ABSTRACT FROM AUTHOR]

A multiple quantum barrier (MQB) avalanche photodiode (APD) structure based on GaN/AlxGa $_{1{-}x}\text{N}$ material system has been proposed in this paper which is capable of detecting infrared (IR) signal up to $6.0~\mu \text{m}$ wavelength. A self-consistent quantum drift-diffusion (SCQDD) model developed by the authors, has been used to determine the current-voltage characteristics under dark and illuminated conditions, spectral response, excess noise properties, signal-to-noise ratio, time and frequency responses. Results show that the proposed MQB APD attains peak responsivity of 60 AW $^{-1}$ at $3.0\, \mu \text{m}$ wavelength. Incorporation of a dedicated thin $n$ -type GaN layer for avalanche multiplication in between the $p^{+}$ -GaN contact layer and MQB constant-field drift-layer ensures significantly low noise equivalent power under normal operating conditions at room temperature (300 K). Optical pulse response of the device reveals that special restriction over the charge multiplication able to supress the minor peaks of the current response and consequently significantly narrow pulse response can be achieved. Narrow pulse response leads to broad bandwidth of 274.5 GHz, which is significantly broader than the existing IR photo-detectors.

A top-illuminated deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately −140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al0.6Ga0.4N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of <1 × 10−8 A/cm2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 104 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate. [ABSTRACT FROM AUTHOR]

The wavelength 1550 nm is widely used in fiber-optic communications and imaging systems. Avalanche photodiodes (APDs) offer high sensitivity for detecting this wavelength. However, the noise caused by the stochastic nature of the impact ionization gain mechanism can temper the benefit of amplifying the signal. Here, we report a separate absorption, charge, and multiplication APD that uses a two-step staircase multiplication region exhibiting a near-unity excess noise factor. At a gain of four, the excess noise factor is approximately three times lower than conventionally used InGaAs/InP separate absorption, charge, and multiplication APDs. This improved excess noise coupled with 1550-nm operation offers the potential for enhanced performance in several key application areas. [ABSTRACT FROM AUTHOR]

The world of photon science experiences significant advancements since the advent of synchrotron light sources with unprecedented brilliance, intensity and pulse repetition rates, with large implications on the detectors used for instrumentation. Here, an overview about the work on this field carried out at the semiconductor laboratory of the Max-Planck-Society (MPG HLL) is given. Main challenges are high dynamic range to resolve faint features at the fringes of scatter images as well as structures in bright peaks, and high bandwidth to fully exploit the fast timing capability of the source. A newly developed device to improve the signal-to-noise-ratio (SNR) at high bandwidths is the so-called MARTHA (Monolithic Array of Reach-Through Avalanche Photodiodes) structure, which integrates an array of APDs on a monolithic substrate. The reach-through architecture assures near 100% fill factor and allows implementing a thin entrance window with optimized quantum efficiency for low energy X-rays. The structures operate in proportional mode with adjustable gain, and can serve as a drop-in replacement for PAD detectors in hybrid pixel systems. A more sophisticated solution for low to medium frame rate applications with high contrast requirement are pnCCDs with high dynamic range in the pixel area featuring DEPFET based readout nodes with non-linear amplification (NLA). The high dynamic range mode has been demonstrated for pnCCD devices with a pixel size down to 75 μm². Framerates of up to 1 kHz are possible for a 1 Megapixel detector. Small size prototypes of these structures have recently been manufactured. Modified DEPFET structures with build-in non-linear amplification are also used to implement active pixel detectors optimized for high dynamic range. Successfully prototyped for the DSSC sensors (DEPFET Sensor with Signal Compression) at the XFEL, these structures are increasingly being used in applications requiring high contrast and intensity, e.g., TEM imaging. Charge handling capability and output characteristics can be tailored to the requirements, as well as pixel geometry and size. The large intrinsic gain of the DEPFET provides excellent SNR even at fast timing. Pixels can be read with a speed of 100 ns, the resulting frame rate depends on the degree of readout parallelization. [ABSTRACT FROM AUTHOR]

The effect of nanopipe defects on the device performance of Gallium nitride (GaN) avalanche photodiodes (APDs) is investigated and the influence mechanism is analyzed. It is discovered that nanopipes can incorporate more carbon impurities, resulting in the introduction of more deep energy level defects into the epitaxial layers. This causes an increase in device leakage and challenges in distinguishing between light current and dark current. It is found that an inserted n‐AlGaN interlayer can effectively block nanopipes and improve device performance significantly. [ABSTRACT FROM AUTHOR]

Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000. [ABSTRACT FROM AUTHOR]

The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley AIIIBV semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L- and X-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed. [ABSTRACT FROM AUTHOR]

Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage Vbr 70–80 V. At the applied bias of 0.9 Vbr, the dark current was 75–200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5 A/W at 1550 nm. [ABSTRACT FROM AUTHOR]

Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including a higher responsivity, faster response times, and superior signal-to-noise ratios. These characteristics make avalanche photodiodes particularly suitable for medical-imaging modalities that require a high detection efficiency, excellent timing resolution, and enhanced spatial resolution. This review explores the key features of avalanche photodiodes, discusses their applications in medical-imaging techniques, and highlights the challenges and future prospects in utilizing avalanche photodiodes for medical purposes. Special attention is paid to the recent progress in silicon-compatible avalanche photodiodes. [ABSTRACT FROM AUTHOR]

Digital alloy (DA) InAlAs on the InP substrate exhibits a lower excess noise compared to a traditional In0.52Al0.48As random alloy as the multiplication layer in avalanche photodiodes (APDs). This work implements DA InAlAs as the multiplication layer in a 1550 nm separate absorption, grading, charge, and multiplication APD and characterizes the performances through various analyses. The device reaches a maximum gain of 221 before avalanche breakdown, with a maximum gain-bandwidth product of more than 140 GHz. At 90% breakdown voltage, the dark current density is 4.1 mA/cm2, and the responsivity is 0.48 A/W at unit gain. Excess noise factors were identified, yielding an effective k value of around 0.15, which is lower than that of random alloy In0.52Al0.48As APDs (k ∼0.2). These findings show that DA InAlAs has the potential to be a promising material for high-performance APDs. [ABSTRACT FROM AUTHOR]

High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, and quantum applications. This paper reports antimony-based separate absorption, charge, and multiplication structure APDs on InP substrates. Al0.7In0.3As0.79Sb0.21 is used for the multiplier region, and InGaAs is used as the absorber. The excess noise is comparable to that of silicon APDs; the k-value is more than one order of magnitude lower than that of APDs that use InP or InAlAs for the gain region. The external quantum efficiency without an anti-reflection coating at 1550 nm is 57%. The gradient of the temperature coefficient of avalanche breakdown voltage is 6.7 mV/K/μm, which is less than one-sixth that of InP APDs, presenting the potential to reduce the cost and complexity of receiver circuits. Semi-insulating InP substrates make high-speed operation practical for widely reported AlxIn1−xAsySb1−y-based APDs. [ABSTRACT FROM AUTHOR]

For short-wavelength infrared (SWIR) avalanche photodiodes, a separate absorption, charge, and multiplication design is widely used. AlInAsSb on an InP substrate is a potential multiplication layer with a lattice match to absorber candidates across the SWIR. Our new measurements demonstrate that AlInAsSb on InP is a promising multiplier candidate with a relatively low dark current density of 10−4 A/cm2 at a gain of 30; a high gain, measured up to 245 in this study; and a large differentiation of electron and hole ionization leading to a low excess noise, measured to be 2.5 at a gain of 30. These characteristics are all improvements over commercially available SWIR detectors incorporating InAlAs or InP as the multiplier. We measured and analyzed gain for multiple wavelengths to extract the ionization coefficients as a function of an electric field over the range 0.33–0.6 MV/cm. [ABSTRACT FROM AUTHOR]

Amplification of weak ultraviolet signals has always been a challenging issue to design and fabricate high-performance ultraviolet photodetectors. Here, we observe a distinctive microplasma breakdown behavior in AlGaN-based ultraviolet avalanche photodiodes with artificial mesa architecture. At 107 V breakdown voltage, the photocurrent increases sharply whereas dark current intriguingly remains at the extremely low level of 0.1 nA as the applied voltage increases. Simultaneously, a significant blue luminescence phenomenon is observed at the mesa edge of photodiode at breakdown voltage, indicating the occurrence of microplasma breakdown. Ultimately, the microplasma avalanche photodiode achieves a record-high avalanche gain of 3 × 106 with light–dark current ratio readily exceeding 107. Kelvin probe force microscopy was employed to reveal the physical mechanism of localized avalanche breakdown induced by photoelectric effects and elaborate the microplasma discharge process, which is related to surface states. The unprecedented detection mode of photocurrent triggering avalanche events while remaining low dark current is anticipated to effectively shield the background noise and amplify ultraviolet signals. It is worth further research to explore its possibility on high-sensitivity ultraviolet photodetection. [ABSTRACT FROM AUTHOR]

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation. [ABSTRACT FROM AUTHOR]

Current CMOS single-photon detectors operating in Geiger mode use passive quenching, yielding slow recovery due to the RC delay. Active quenching of CMOS photon detectors operating in the Geiger mode requires external quenching circuitry that occupies a large area, reducing the fill factor and spatial resolution. Here, we demonstrate a self-quenched active recovery (SQUARE) single-photon detector having its recovery accelerated by a secondary carrier multiplication process. The device consists of two gain regions, one giving rise to the photon response and the other quenching the device and amplifying the residual current for a speedy self-recovery. The first gain region is a crystalline silicon p/n junction fabricated through a commercial CMOS process, and the second gain region is a carbon-doped amorphous silicon layer deposited on the top metal layer of a completed CMOS wafer. The SQUARE single-photon detector shows a Geiger-mode gain greater than 100 000 and achieved <30 ns self-recovery time, much faster than self-quenched and passively quenched single-photon avalanche photodiodes reported to date. [ABSTRACT FROM AUTHOR]