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Emerging quantum materials as well as novel traditional electronic and photonic materials may enable a new generation of information science devices if they can be synthesized on suitable substrates. Additionally, material and device designs may benefit from tunable properties through engineered epitaxial strain for the manipulation of the electronic character. In this work, three series of III–V ternary alloys, GaInSb, AlInSb, and InAsSb, are grown via molecular beam epitaxy on GaAs (001) substrates to explore the flexibility of abrupt metamorphic epitaxial layers with tunable lattice parameters between 6.135 and 6.479 Å. Their deposition on both homomorphic GaAs and pseudomorphic AlAs buffers is also explored. The structures of these alloys are characterized via reflection high-energy electron diffraction, high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy to assess their suitability as stable buffer layers with wide variability of accessible lattice parameters. [ABSTRACT FROM AUTHOR]

The interaction between ammonia (NH3) and (alumino)silicates is of fundamental and applied importance, yet the specifics of NH3 adsorption on silicate surfaces remain largely unexplored, mainly because of experimental challenges related to their electrically insulating nature. An example of this knowledge gap is evident in the context of ice nucleation on silicate dust, wherein the role of NH3 for ice nucleation remains debated. This study explores the fundamentals of the interaction between NH3 and microcline feldspar (KAlSi3O8), a common aluminosilicate with outstanding ice nucleation abilities. Atomically resolved non-contact atomic force microscopy, x-ray photoelectron spectroscopy, and density functional theory-based calculations elucidate the adsorption geometry of NH3 on the lowest-energy surface of microcline, the (001) facet, and its interplay with surface hydroxyls and molecular water. NH3 and H2O are found to adsorb molecularly in the same adsorption sites, creating H-bonds with the proximate surface silanol (Si–OH) and aluminol (Al–OH) groups. Despite the closely matched adsorption energies of the two molecules, NH3 readily yields to replacement by H2O, challenging the notion that ice nucleation on microcline proceeds via the creation of an ordered H2O layer atop pre-adsorbed NH3 molecules. [ABSTRACT FROM AUTHOR]

This paper describes a three-step process to remediate surface and sub-surface defects on chemo-mechanically polished SiC surfaces. In this process, a CF4-based inductively coupled plasma with reactive ion etch was used to remove material to a depth, which is unaffected by surface and subsurface polishing damage. This produced a planarized but carbon-rich fluorinated surface. This surface was then exposed to a 2 min rapid thermal oxidation in air at 1000 °C to oxidize and volatilize the excess carbon and fluorinated species, respectively. The resulting surface oxide was then stripped using a dilute hydrofluoric acid in water solution. This process, referred to as plasma assisted remediation, reproducibly yielded planarized, stoichiometric surfaces with low levels of carbon and oxygen contamination suitable for subsequent device fabrication. In the supporting studies described here, 4H- and 6H-SiC(0001) surfaces were remediated and characterized by x-ray photoelectron spectroscopy and atomic force microscopy at each stage of the process. Experimental studies under ion-rich and radical-dominant conditions are also reported which provide greater insight into the underlying chemistry and physics of the process. [ABSTRACT FROM AUTHOR]

MnO(001) thin films were grown on commercial MgO(001) substrates at 520 °C by reactive molecular beam epitaxy (MBE) using Mn vapor and O2-seeded supersonic molecular beams (SMBs) both with and without radio frequency (RF) plasma excitation. For comparison, MnO(001) films were grown by reactive MBE using O2 from a leak valve. X-ray photoelectron spectroscopy confirmed the Mn2+ oxidation state and 10%–15% excess oxygen near the growth surface. Reflection high-energy electron diffraction and x-ray diffraction evidenced that the films were rock salt cubic MnO with very strong (001) orientation. High-angle annular dark field scanning transmission electron microscopy with energy-dispersive x-ray spectroscopy demonstrated abrupt MnO/MgO interfaces and indicated [(001)MnO||(001)MgO] epitaxial growth. Ex situ atomic force microscopy of films deposited without RF excitation revealed smooth growth surfaces. An SMB-grown MnO(001) film was converted to Mn3O4 with strong (110) orientation by post-growth exposure to an RF-discharge (RFD) SMB source providing O atoms; the surface of the resultant film contained elongated pits aligned with the MgO 110 directions. In contrast, using the RFD-SMB source for growth resulted in MnO(001) films with elongated growth pits and square pyramidal hillocks aligned along the MgO 110 and 100 directions, respectively. [ABSTRACT FROM AUTHOR]

As initiated Chemical Vapor Deposition (iCVD) finds increasing application in precision industries like electronics and optics, defect prevention will become critical. While studies of non-ideal morphology exist in the iCVD literature, no studies investigate the role of defects. To address this knowledge gap, we show that the buildup of short-chain polymers or oligomers during normal operation of an iCVD reactor can lead to defects that compromise film integrity. We used atomic force microscopy to show that oligomer aggregates selectively prevented film growth, causing these hole-like defects. X-ray diffraction and optical microscopy demonstrated the crystallinity of the aggregates, pointing to a flat-on lamellar or mono-lamellar structure. To understand the origin of the aggregates, spectroscopic ellipsometry showed that samples exposed to the reactor consistently accrued low-volatility contaminants. X-ray photoelectron spectroscopy revealed material derived from polymerization in the contamination, while scanning electron microscopy showed the presence of defect-causing aggregates. We directly linked oligomeric/polymeric contamination with defect formation by showing an increased defect rate when a contaminant polymer was heated alongside the sample. Most importantly, we showed that starting a deposition at a high sample temperature (e.g., 50 °C) before reducing it to the desired setpoint (e.g., 9 °C) unilaterally prevented defects, providing a simple method to prevent defects with minimal impact on operations. [ABSTRACT FROM AUTHOR]

This review concentrates on the microstructure of InxGa1−xN layers and quantum wells (QWs) in relation to their optical properties. The microstructure of InxGa1−xN, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ∼10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from InxGa1−xN layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of InxGa1−xN, which are crucial alloys in the field of optoelectronics. [ABSTRACT FROM AUTHOR]

The binding of the receptor binding domain (RBD) of the SARS-CoV-2 spike protein to the host cell receptor angiotensin-converting enzyme 2 (ACE2) is the first step in human viral infection. Therefore, understanding the mechanism of interaction between RBD and ACE2 at the molecular level is critical for the prevention of COVID-19, as more variants of concern, such as Omicron, appear. Recently, atomic force microscopy has been applied to characterize the free energy landscape of the RBD–ACE2 complex, including estimation of the distance between the transition state and the bound state, xu. Here, using a coarse-grained model and replica-exchange umbrella sampling, we studied the free energy landscape of both the wild type and Omicron subvariants BA.1 and XBB.1.5 interacting with ACE2. In agreement with experiment, we find that the wild type and Omicron subvariants have similar xu values, but Omicron binds ACE2 more strongly than the wild type, having a lower dissociation constant KD. [ABSTRACT FROM AUTHOR]

Short-period 2.5 nm W/B4C multilayers are useful as dispersive Bragg reflectors in wavelength-dispersive x-ray fluorescence. However, high roughness at the W–B4C interfaces deteriorates optical performance. To improve this, low-energy neon ion beam polishing (IBP) has been applied in sputter-deposited 2.5 nm W/B4C multilayers. Two energies, 200 and 50 eV, were investigated to study the effects of polishing by sputter removal (200 eV) and polishing by the mobilization of weakly bound surface atoms (50 eV). Atomic force microscopy and x-ray scattering showed reduced interface roughness for both IBP energies. However, the optical constant profile of 200 eV IBP showed strong W–B4C intermixing and interface asymmetry, leading to significant reflectance loss. In contrast, 50 eV IBP resulted in sharp, symmetric interfaces and increased optical contrast. A 43% peak reflectance at θ = ⁓9.7° grazing for W/B4C with 50 eV IBP was measured at λ = 0.834 nm—a 6.4% increase relative to non-polished W/B4C, corresponding to a 25% increase in integrated reflectance. These results highlight the necessity of using low-energy ion polishing by the mobilization of weakly bound surface atoms in short-period multilayers—rather than polishing by sputter removal. [ABSTRACT FROM AUTHOR]

The discovery of graphene led to a burst in search for 2D materials originating from layered atomic crystals coupled by van der Waals force. While bulk bismuth crystals share this layered crystal structure, unlike other group V members of the periodic table, its interlayer bonds are stronger such that traditional mechanical cleavage and exfoliation techniques have shown to be inefficient. In this work, we present a novel mechanical cleavage method for exfoliating bismuth by utilizing the stress concentration effect induced by micro-trench SiO 2 structures. As a result, the exfoliated bismuth flakes can achieve thicknesses down to the sub-10 nm range, which are analyzed by atomic force microscopy and Raman spectroscopy. [ABSTRACT FROM AUTHOR]

GaAs surfaces require electrical and chemical passivation for semiconductor devices, but in order to have air stable passivation, high temperatures have been previously required in the passivation step. Here, we demonstrate air-stable, ex situ plasma passivation of GaAs using consecutive hydrogen and nitrogen plasmas at room temperature. No pre-clean using deoxidizing wet chemistry or other means is required. The hydrogen plasma step removes surface oxides and As, which leaves a Ga-rich layer that the nitrogen plasma then turns to GaN. The formed GaN layer efficiently passivates the surface. The plasma-passivated GaAs shows upto 5 × room-temperature photoluminescence after 1 year, and room-temperature time-resolved photoluminescence demonstrates robust passivation even after 3 years, both comparisons to similarly aged unpassivated GaAs. Atomic force microscopy was used to confirm that the passivated surfaces can be made smooth enough for microelectronic applications. Grazing incidence x-ray diffraction indicated that the nitride films are amorphous, and energy-dispersive x-ray spectroscopy was used to estimate the nitrogen content. We used a common inductively coupled plasma reactive ion etching system for plasma passivation, thus enabling the rapid adoption of this technique. [ABSTRACT FROM AUTHOR]

We analyze from a theoretical perspective recent experiments where chiral discrimination in biological systems was established using Atomic Force Microscopy (AFM). Even though intermolecular forces involved in AFM measurements have different origins, i.e., electrostatic, bonding, exchange, and multipole interactions, the key molecular forces involved in enantiospecific biorecognition are electronic spin exchange and van der Waals (vdW) dispersion forces, which are sensitive to spin–orbit interaction (SOI) and space-inversion symmetry breaking in chiral molecules. The vdW contribution to chiral discrimination emerges from the inclusion of SOI and spin fluctuations due to the chiral-induced selectivity effect, a result we have recently demonstrated theoretically. Considering these two enantiospecific contributions, we show that the AFM results regarding chiral recognition can be understood in terms of a simple physical model that describes the different adhesion forces associated with different electron spin polarization generated in the (DD), (LL), and (DL) enantiomeric pairs, as arising from the spin part of the exchange and vdW contributions. The model can successfully produce physically reasonable parameters accounting for the vdW and exchange interaction strength, accounting for the chiral discrimination effect. This fact has profound implications in biorecognition where the relevant intermolecular interactions in the intermediate-distance regime are clearly connected to vdW forces. [ABSTRACT FROM AUTHOR]

This study investigated the improvement of the electro-optical properties of a liquid crystal (LC) cell fabricated through brush coating using graphene oxide (GO) doping. The physical deformation of the surface was analyzed using atomic force microscopy. The size of the groove increased as the GO dopant concentration increased, but the direction of the groove along the brush direction was maintained. X-ray photoelectron spectroscopy analysis confirmed that the number of C–C and O–Sn bonds increased as the GO concentration increased. Since the van der Waals force on the surface increases as the number of O–metal bonds increases, we were able to determine why the anchoring energy of the LC alignment layer increased. This was confirmed by residual DC voltage and anchoring energy measurements that were later performed. As the GO concentration increased, the width of the hysteresis curve decreased, indicating that the residual DC voltage decreased. Additionally, the 15% GO-doped sample exhibited a significant increase in its anchoring energy up to 1.34 × 10−3 J/m2, which is similar to that of rubbed polyimide. It also secured a high level of electro-optical properties and demonstrated potential as a next-generation thin-film display despite being produced via a simple brush-coating process. [ABSTRACT FROM AUTHOR]

Lead-free piezoelectric (K, Na)NbO3 (KNN) is considered one of the promising candidates for the replacement of Pb(ZrxTi1−x)O3. Several studies underlined the issue of K and Na volatility with increasing deposition temperatures, leading to high leakage currents in thin films, which still represents a major drawback for applications. This paper shows how epitaxial growth with concomitant preferred orientation of KNN films on niobium-doped strontium titanate (Nb:STO) depends on growth temperature and substrate strain. A preferred out-of-plane polar (001) orientation of KNN is obtained at high temperatures (>600 °C), while (100) orientation is dominant for lower ones. The (001) orientation is forced out-of-plane due to the sizeable in-plane stress derived from a negative lattice mismatch of pseudo-cubic KNN with respect to the underlying cubic (001) Nb:STO substrate. Moreover, we show that K-Na deficiency and high leakage of epitaxial KNN films deposited at high temperatures are accompanied by the appearance of a pattern of orthogonal spontaneous ferroelectric domains aligned to the [100] and [010] directions of Nb:STO. This pattern, visible in secondary electron microscopy, piezoforce response microscopy, and conductive atomic force microscopy images, is uncorrelated to the surface morphology. Supported by reciprocal space mapping by x-ray diffraction, this phenomenon is interpreted as the result of strain relaxation via ferroelectric domain formation related to K-Na deficient films displaying a sizable and increasing compressive strain when grown on Nb:SrTiO3. Our findings suggest that strain engineering strategies in thin films could be used to stabilize specific configurations of piezo- and ferroelectric domains. [ABSTRACT FROM AUTHOR]

Epitaxial growth of wurtzite AlN films on Si {111} results in 19% lattice misfit, which gives rise to a large density of threading dislocations with different recombination rates of electron–hole pairs. Here, we investigate types and distributions of threading dislocations of the MOVPE-grown 200 nm AlN/Si {111} film, whereby the dislocations are visualized using the technique of wet chemical etching. Atomic force microscopy suggests the existence of four different types of etch pits without any topological differences. Cross-sectional transmission electron microscope studies on etched samples are employed to associate the types of dislocations with the shapes of their etch pits. The recombination activity of individual dislocations was quantified by measuring the electron beam induced current and by correlative measurement of topography, secondary electron imaging, and the electron beam absorbed current. The strongest recombination activity was obtained for the m + c-type (mixed), c-type (screw), and a + c-type (mixed) threading dislocations, whereas the a-type (edge) threading dislocations were nearly recombination-inactive. [ABSTRACT FROM AUTHOR]

High quality, uni-polar, epitaxial AlN with minimum oxygen content promises excellent surface acoustic wave and bulk acoustic wave resonator characteristics such as high electromechanical coupling coefficient and power handling capabilities, which is particularly useful for RF filter applications. By systematically varying the growth temperature, the study investigates its impact on the oxygen levels, defect states, and crystallographic texture of the AlN thin films using a combination of atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, spectroscopic ellipsometry, scanning transmission electron microscopy, as well as room temperature and temperature dependent I–V measurements. The research demonstrates that the films grown at a temperature of 700 ° C exhibit the most favorable results. These films exhibit the lowest oxygen levels, possess epitaxial growth, and display the highest crystalline quality (XRD AlN 0002 ω − FWHM = 1.3 °). Additionally, these films demonstrate a significant reduction in sub-bandgap absorption. By comparing the cathode current measured during deposition, we suggest that the presence of an impurity layer formed during idle time between depositions as a possible source of oxygen in the sputter chamber. In addition, the study presents a possible model to explain the mixed polarity observed in AlN and proposes various ways to achieve uni-polar AlN on silicon substrates. [ABSTRACT FROM AUTHOR]

The presence of gradient softer outer layers, commonly observed in biological systems (such as cartilage and ocular tissues), as well as synthetic crosslinked hydrogels, profoundly influences their interactions with opposing surfaces. Our prior research demonstrated that gradient-stiffness hydrogel layers, characterized by increasing elasticity with depth, control contact mechanics, particularly in proximity to the layer thickness. We postulate that the distribution of polymers within these gradient layers imparts extraordinary stretch and adhesion characteristics due to network adaptability and stress-induced reorganization. To investigate this phenomenon, we utilized Atomic Force Microscopy nanoindentation to assess the depth-dependent adhesion behavior of polyacrylamide hydrogels with varying gradient layer thicknesses. Two gradient layer thicknesses were achieved by employing different molding materials: glass and polyoxymethylene (POM). Glass-molded hydrogels exhibited a thinner gradient layer alongside a stiffer bulk layer compared to their POM-molded counterparts. In indentation experiments, the POM-molded hydrogel had larger adhesion compared to glass-molded hydrogel. We find that indenting within the gradient layer engenders increased load-unload hysteresis due to heightened fluid transport in the sparse outer polymer network. Consequently, this led to augmented adhesion and work of separation at shallow depths. We suggest that the prominent stretching capability of the sparse outer polymer network during probe retraction contributes to enhanced adhesion. The Maugis–Dugdale adhesive model only fits well to indentations on the thin layer or indentations which engage significantly with the bulk. These results facilitate a comprehensive characterization of adhesion mechanics in gradient-stiffness hydrogels, which could foster their application across emerging contexts in health science and environmental domains. [ABSTRACT FROM AUTHOR]

Atomic force microscopy (AFM) that can be simultaneously performed with scanning tunneling microscopy (STM) using metallic tips attached to self-sensing quartz cantilevers (qPlus sensors) has advanced the field of surface science by allowing for unprecedented spatial resolution under ultrahigh vacuum conditions. Performing simultaneous AFM and STM with atomic resolution in an electrochemical cell offers new possibilities to locally image both the vertical layering of the interfacial water and the lateral structure of the electrochemical interfaces. Here, a combined AFM/STM instrument realized with a qPlus sensor and a home-built potentiostat for electrochemical applications is presented. We demonstrate its potential by simultaneously imaging graphite with atomic resolution in acidic electrolytes. Additionally, we show its capability to precisely measure the interfacial solvent layering along the surface normal as a function of the applied potential. [ABSTRACT FROM AUTHOR]

ScN in the rock salt structure is a well-investigated material due to its desirable properties like the high hardness or large thermal conductivity. Recent computations by Adamski et al. [Appl. Phys. Lett. 115, 232103 (2019)] showed that ScN/GaN heterostructures exhibit an outstanding polarization gradient which would be beneficial for polarization induced electron gases. The pseudobinary semiconductor Sc x Al 1 − x N, when maintaining the cubic rock salt structure, could be beneficial for tailoring the polarization gradient using the Sc dependency of material properties. The structural properties of rs-Sc x Al 1 − x N are not fully discovered yet, thus in this work, DC-magnetron sputtered cubic rock salt Sc x Al 1 − x N thin films with 0.55 < x < 1.00 were grown and analyzed on ScN(111)/Si(111). The epitaxial relation of ScN(111) thin films on the Si(111) substrate is determined to be ScN[110] ∥ Si[100]. Furthermore, concentration dependent properties like the lattice parameter of Sc x Al 1 − x N were measured [a(ScN) = 4.50 Å, a(Sc0.55Al0.45N) = 4.30 Å] and the stress σ within the layers was determined. The crystal quality was evaluated using ω -scans, revealing FWHM = 1.14 ° for Sc0.95Al0.05N. The diameters of the columns were determined by atomic force microscopy and scanning electron microscopy and they are range from 34 to 59 nm for 0.55 < x < 1.00. At x = 0.55 , Sc x Al 1 − x N columns in the hexagonal wurtzite as well as cubic rock salt structure were detected. This information about the structural specifications of Sc x Al 1 − x N in the rock salt structure forms the basis for further investigations and experimental confirmation of the electric properties of ScN/GaN heterostructures or even a Sc x Al 1 − x N/GaN based approach for improved structures for high-electron-mobility transistors. [ABSTRACT FROM AUTHOR]

InAs nanowires (NWs) were grown on SiOx pinholes formed on Si(111) substrates by molecular beam epitaxy. Influences of electron-beam (EB) irradiation on the SiOx layer on the pinhole formation and the subsequent InAs NW growth were studied. As the EB irradiation dose increased, the pinhole density in the SiOx layer decreased. From atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy results, it was found that the pinhole etching of the SiOx layer by Ga droplets was suppressed by carbon adsorption due to the EB irradiation. By forming high-density pinholes on the SiOx layer without the EB irradiation, high-density InAs NWs with 1–2 × 1010 cm−2 were grown successfully, and the uniformity in the NW diameter improved. The standard deviation of the NW diameter was 1.8 nm (8.8%) for high-density NWs. In addition, the NW diameter decreased with decreasing EB dose, and the NW diameter was controlled by adjusting the diameter of Ga droplets forming the pinholes. As the NW diameter decreased, photoluminescence spectra of the NWs shifted to higher energies than the bandgap energy of the wurtzite InAs bulk. From these results, we successfully fabricated high-density and high-uniformity InAs NWs with quantum size effects on EB-unirradiated SiOx/Si(111). [ABSTRACT FROM AUTHOR]

Photoinduced force microscopy (PiFM) is a technique for nanoscale characterization of optically active materials. For correct data analysis, it is important to understand and recognize potential artifacts. In this study, we provide a Fourier-based framework for the different origins of the photoinduced force, including the photothermal motion of the atomic force microscopy (AFM) tip in PiFM measurements. We use individual gold nanoparticles as a model system to explore such tip-related phenomena and to demonstrate the benefits of three-dimensional analysis of the photoinduced force. Comparison of the in-phase heterodyne PiFM signal and the derivative of the tip–sample interaction, ∂ ⟨ k ts ⟩ / ∂ z c , directly reveals a photothermal origin for the PiFM signal in our experiments. Furthermore, we observe a lateral photothermal vibration of the tip apex induced by tip asymmetry. This lateral vibration emphasizes the importance of considering the motion of the AFM tip during data analysis. The improved lateral resolution conferred by ∂ ⟨ k ts ⟩ / ∂ z c can lead to misinterpretation. Our findings highlight that meticulous data analysis is required to ensure the correct interpretation of PiFM data. [ABSTRACT FROM AUTHOR]

Integrin mechanosensing plays an instrumental role in cell behavior, phenotype, and fate by transmitting mechanical signals that trigger downstream molecular and cellular changes. For instance, force transfer along key amino acid residues can mediate cell adhesion. Disrupting key binding sites within α 5 β 1 integrin's binding partner, fibronectin (FN) diminishes adhesive strength. While past studies have shown the importance of these residues in cell adhesion, the relationship between the dynamics of these residues and how integrin distributes force across the cell surface remains less explored. Here, we present a multiscale mechanical model to investigate the mechanical coupling between integrin nanoscale dynamics and whole-cell adhesion mechanics. Our framework leverages molecular dynamics simulations to investigate residues within α 5 β 1 -FN during stretching and the finite element method to visualize the whole-cell adhesion mechanics. The forces per integrin across the cell surface of the whole-cell model were consistent with past atomic force microscopy and Förster resonance energy transfer measurements from the literature. The molecular dynamics simulations also confirmed past studies that implicate two key sites within FN that maintain cell adhesion: the synergy site and arginine-glycine-aspartic acid (RGD) motif. Our study contributed to our understanding of molecular mechanisms by which these sites collaborate to mediate whole-cell integrin adhesion dynamics. Specifically, we showed how FN unfolding, residue binding/unbinding, and molecular structure contribute to α 5 β 1 -FN's nonlinear force–extension behavior during stretching. Our computational framework could be used to explain how the dynamics of key residues influence cell differentiation or how uniquely designed protein structures could dynamically limit the spread of metastatic cells. [ABSTRACT FROM AUTHOR]

Graphene-based field-effect transistors (FETs) are suitable for pH sensors due to their outstanding surface chemical properties and its biocompatibility. To improve the devices' stability and pH sensitivity, different sets of dielectric passivation layers composed of monolayer hexagonal boron nitride with and without aluminum oxide layers were evaluated. Non-linearities of the pH response were observed. Heterostructure FETs were derived from subtractive manufacturing of commercially transferred two-dimensional materials on four-inch SiO2/Si wafers via stainless steel and polypropylene masking. Phosphate solutions (10 mM) of varying pH were incubated on bare devices, whereby liquid-gating elucidated linear changes in the Dirac voltage of hBN/graphene (−40 mV/pH) that was smaller than a device consisting only of monolayer graphene (−47 mV/pH). Graphene-based FETs were passivated with aluminum oxide nanofilms via electron beam or atomic layer deposition and were observed to have distinct Raman spectral properties and atomic force microscopy topologies corroborating the hypothesis that morphological differences of the deposited aluminum oxide influence the pH-dependent electrical properties. Atomic layer deposition of aluminum oxide on the 2D sensing areas resulted in non-linear shifting of the Dirac voltage with respect to pH that evolved as a function of deposition thickness and was distinct between graphene with and without hexagonal boron nitride as a capping monolayer. The non-linear response of varying thickness of AlxOy on graphene-based FETs was progressively reduced upon basic wet etching of the AlxOy. Overall, passivated graphene-based transistors exhibit deposition-dependent pH responses. [ABSTRACT FROM AUTHOR]

A gold surface is functionalized by chemisorption of the enantiopure N,N′-bis-[2,2′;5′,2″]tert-thiophene-5-yl methylcyclohexane-1,2-diamine (2T3N), a chiral oligothiophene derivative, via overnight incubation in a 2T3N ethanol solution. The Au|2T3N interface is characterized by x-ray photoelectron circular dichroism and comparing x-ray photoemission spectroscopy and electro-desorption results. Charge transmission at the Au|2T3N| solution interface is characterized by recording the cyclic voltammetry of the Fe(III)/Fe(II) reversible redox couple, finding a charge transfer rate constant, k°, variation from 1 × 10−1 to 3.3 × 10−2 cm s−1, when comparing the bare Au and the Au|2T3N interfaces, respectively. The "anomalous" high value of k° found for the chiral Au|2T3N interface can be rationalized on the basis of the chiral-induced spin selectivity effect, as further proved by magnetic–conductive atomic force microscopy measurements at room temperature. A spin polarization of about 30% is found. [ABSTRACT FROM AUTHOR]

Ultra-thin layers (< 8 nm) of a Bi 2 Te 3 topological insulator have been grown on GaAs (100) substrates using molecular beam epitaxy. The growth was performed from a single Bi 2 Te 3 effusion cell and one source of extra tellurium. Optical and structural characterizations were carried out through Raman spectroscopy, x-ray diffraction, atomic force microscopy, and scanning electron microscopy. The topological insulator properties were also investigated by angle-resolved photoelectron spectroscopy. A layer of 5 nm showed Dirac cone-like linear electronic band dispersion, indicating the signature of a topological insulator with the Dirac point having large binding energy relative to the Fermi level as expected for ultra-thin films. Topological insulator properties were also investigated at the initial growth stage where deposition follows an islandlike growth mode. Our results can contribute to the development of practical chalcogenide-based thin-film spintronics devices. [ABSTRACT FROM AUTHOR]

The structure and optical characteristics of thin (∼30 nm) wurtzite AlInN films grown pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al1−xInxN layers are grown by metalorganic chemical vapor deposition, resulting in films with varying In content from x = 0.142 to 0.225. They are measured using atomic force microscopy, x-ray diffraction, reciprocal space mapping, and spectroscopic ellipsometry (SE). The pseudomorphic AlInN layers provide a set where optical properties can be determined without additional variability caused by lattice relaxation, a crucial need for designing devices. They have smooth surfaces (rms < 0.29 nm) with minimum pit areas when the In content is near lattice-matched to GaN. As expected, SE shows that the refractive index increases and the bandgap energy decreases with increased In-content. Plots of bandgap energy vs In content are fitted with a single bowing parameter of 3.19 eV when using bandgap energies for AlN and InN pseudomorphic to GaN, which is lower than previous measurements and closer to theoretical predictions. [ABSTRACT FROM AUTHOR]

Atomic layer plasma technologies require localizing ions' impact within nanometers up to an atomic layer. The possible way to achieve this is the decrease in the ion energy up to surface binding energy. At such low ion kinetic energies, the impact of different plasma effects, causing the surface modification, can be of the same order as kinetic ones. In this work, we studied the sputtering of amorphous silicon films by Ar+, Kr+, and Xe+ ions at energies of 20–200 eV under the low-pressure inductively coupled plasma discharge in pure argon, krypton, and xenon, respectively, at a plasma density of 1–1.5 × 1010 cm−3. Under the plasma conditions, a high asymmetry of discharge allowed to form ion flux energy distribution functions with narrow energy peak (5 ± 2 eV full width at half maximum). Real time in situ control over the ion composition and flux as well as the sputtering rate (the ratio of the film thickness change to the sputtering time) provided accurate determination of the sputtering yields Y (E i). It is shown that at ion energy above ∼70 eV, the "classical" kinetic sputtering mechanism prevails. In this case, Y (E i) grows rather rapidly with ion energy, increasing with the decrease in the ion mass: the closer the ion mass to the target atom mass, the higher the Y (E i). Below 70 eV, the growth of Y (E i) strongly slows down, with Y (20 eV) being still high (>10−3), indicating the impact of plasma. The obtained trends of Y (E i) are discussed in light of surface modification studied by atomic force microscopy and angular x-ray photoelectronic spectroscopy. [ABSTRACT FROM AUTHOR]

Understanding the nanoscale electrostatic interaction between a conductive atomic force microscopy (AFM) probe and a dielectric film is central to the operation of various nanoscale dielectric microscopies and determination of dielectric properties of the film. There is no simple analytical description of the electrostatic interaction generated in the confined probe-sample geometry for neither static nor dynamic AFM modes used in dielectric measurements. An accurate description of the involved physics is obtained only by means of a finite element analysis modeling of the system. However, the alternative to using the numerical analysis is not very popular due to being slower and requiring relatively high computation resources. In this work, we revised the contributions from different parts of the AFM probe to the probe-sample capacitance by both analytical and numerical methods. We tried to reconciliate the two approaches and observed the differences as a function of geometry and material parameters. Under various noise levels, the efficiency of an analytical model was tested against a finite element analysis that captures in detail the electrostatic interaction in AFM-based dielectric measurements. The investigation was performed in both spectroscopic force-distance curves and constant height scans with measurements for deflection and frequency of the AFM probe. The obtained measurement sensitivities are relevant in selecting the optimal scanning mode and its operational parameters for a given film thicknesses and dielectric constants but also show the critical role of the numerical analysis to the correct interpretation of the measurements. [ABSTRACT FROM AUTHOR]

Epitaxial lift-off (ELO) of high-quality GaN layers allows for integration with a variety of materials enabling improved performance, reduced costs, and development of new electronics. Of the ELO technologies, two-dimensional (2D) material-based lift-off offers great promise but is still in the early stages of development and has yet to demonstrate the scale and yield of other ELO technologies. Here, we demonstrate the potential of this process's scalability, speed, and yield through epitaxial growth and lift-off of 4-in. GaN films using a 2D boron nitride (BN) van der Waals (vdW) buffer layer. Since the BN layer acts as the growth template and the mechanical release layer, both the quality and adhesion of the GaN layer are correlated with the BN morphology and uniformity. Detailed spectroscopic mapping demonstrates excellent BN uniformity, which translates into growth of high-quality GaN as shown in mapping of the x-ray rock curves (XRCs), atomic force microscopy, and photoluminescence. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal abrupt chemically distinct interfaces between the sapphire, BN, and AlN/GaN layers essential for efficient lift-off. Combined with the BN/GaN vdW heterostructure, Ni spalling is used to efficiently lift-off and transfer a full 4-in. GaN layer. Post transfer characterization of a 1.9 μm thick GaN layer transferred to a SiO2/Si wafer shows a very minimal change in the XRC and photoluminescence. Strain measurements before and after transfer show that the process fully relaxes residual strain formed in the GaN during high-temperature growth. This work highlights the potential for industry scalability of an exciting 2D material-based lift-off technology, which can facilitate higher power and more efficient radio frequency devices. [ABSTRACT FROM AUTHOR]

Inclusion of Si atoms to the growth surface during the molecular beam epitaxy of Ge and Sn to form a SiGeSn alloy was identified as a reactive surface species and as a means to compensate strain, which allowed for the subsequent growth of GeSn alloys with high Sn content. The development of a SiGeSn virtual substrate having a 15% Sn concentration and lattice parameter larger than 5.72 Å is demonstrated, using atomic force microscopy, x-ray reciprocal space mapping, and transmission electron microscopy, as a method for the direct growth of thick (>500 nm) fully relaxed GeSn alloys with greater than 10% Sn. This buffer layer enables the monolithic integration of GeSn with silicon for optoelectronic applications, as the SiGeSn virtual substrate allows for selective chemical etching of GeSn, which is important for device fabrication. [ABSTRACT FROM AUTHOR]

Due to their large surface area and novel electronic properties, tungsten disulfide (WS2) nanosheets are promising materials for potential photocatalysis applications. The fabrication of large-scale WS2 nanosheets is a fundamentally important step to realize their applications. The liquid phase exfoliation method, which involves the mechanical exfoliation of layered materials in a solvent, has proven to be a feasible technique for fabricating nanosheets with high yields. Here, we systematically examine the optimization of the fabrication of WS2 nanosheets by exfoliating the WS2 powder in isopropyl alcohol, a low boiling point solvent, using a low-power probe sonicator and ball milling method. We show that prolonged sonication produces a concentration as high as 0.64 mg/ml, and the same concentration can be fabricated in less than half the time if the bulk powder is ball milled prior to the sonication. An atomic force microscopy study reveals that the proportions of monolayers and bilayers can be significantly increased if the nanosheet dispersions are centrifuged at a higher speed or sonicated for a long time. The photodegradation measurements reveal that the decomposition rate of methyl orange with nanosheets is at least 10% higher than that with WS2 powder, suggesting that the photocatalytic activity of WS2 can be enhanced if it is reduced to nanosheets. [ABSTRACT FROM AUTHOR]

Photothermal excitation at frequencies below the mechanical resonance of the atomic force microscopy (AFM) microcantilever can be utilized in force modulation microscopy, fast force displacement curve acquisition, and tip-based mass spectroscopy. To understand the microcantilever bending response in these modes, accurate models of the thermoelastic response of the AFM microcantilever are needed. We study the sub-resonance photothermal vibrational response of coated and uncoated AFM microcantilevers as a function of laser modulation frequency and spot location. The sub-resonance microcantilever response shows distinct thermoelastic regimes. Below the microcantilever's thermal roll-off frequency, the vibration amplitude is mostly constant. Past this frequency, the vibration amplitude decreases with increasing frequency. At modulation frequencies below the thermal roll-off frequency, the most efficient photothermal laser spot to excite harmonic motion is near the free end of both coated and uncoated microcantilevers. For the tested coated microcantilevers, the most efficient photothermal laser location migrates from near the free end of the microcantilever to near the fixed end as modulation frequency increases. For the tested uncoated microcantilever, the most efficient photothermal laser location remains unchanged at the tested frequencies. To predict the bending response of the coated microcantilever, a bilayer bending model is implemented. At low frequencies, this model underpredicts the bending response compared to experiments by up to 90%. This may be due to neglecting microcantilever bending contributed by a through-thickness temperature gradient. Our results illustrate different aspects of the frequency-dependent photothermal laser spot optimization that can guide users to maximizing microcantilever response to a given input power. [ABSTRACT FROM AUTHOR]

The electrolyte effect has been key to the electrochemical CO2 reduction reaction (CO2RR) and has received extensive attention in recent years. Here we combined atomic force microscopy, quasi-in situ X-ray photoelectron spectroscopy, and in situ attenuated total reflection surface-enhanced infrared absorption spectroscopy (ATR-SEIRAS) to study the effect of iodine anions on Cu-catalyzed CO2RR in the absence or presence of KI in the KHCO3 solution. Our results suggested that iodine adsorption caused coarsening of the Cu surface and altered its intrinsic activity for CO2RR. As the potential of the Cu catalyst became more negative, there was an increase in surface iodine anion concentration ([I−]), which could be connected to the reaction-enhanced adsorption of I− ions accompanying the increase in CO2RR activity. A linear relationship was observed between [I−] and current density. SEIRAS results further suggested that the presence of KI in the electrolyte strengthened the Cu–CO bond and facilitated the hydrogenation process, enhancing the production of CH4. Our results have thus provided insight into the role of halogen anions and aided in the design of an efficient CO2RR process. [ABSTRACT FROM AUTHOR]

The multifrequency formalism is generalized and exploited to quantify attractive forces, i.e., van der Waals interactions, with small amplitudes or gentle forces in bimodal and trimodal atomic force microscopy (AFM). The multifrequency force spectroscopy formalism with higher modes, including trimodal AFM, can outperform bimodal AFM for material property quantification. Bimodal AFM with the second mode is valid when the drive amplitude of the first mode is approximately an order of magnitude larger than that of the second mode. The error increases in the second mode but decreases in the third mode with a decreasing drive amplitude ratio. Externally driving with higher modes provides a means to extract information from higher force derivatives while enhancing the range of parameter space where the multifrequency formalism holds. Thus, the present approach is compatible with robustly quantifying weak long range forces while extending the number of channels available for high resolution. [ABSTRACT FROM AUTHOR]

Cantilever-free scanning probe microscopy has enormous potential for high-throughput topography imaging using parallel probe arrays. However, the current imaging mechanism of the cantilever-free tip architecture hardly considers the efficiency of the detection method regarding precision and bandwidth, which could be a bottleneck to expanding the application of this measurement system. In this communication, we present a contact resistance-based cantilever-free imaging system using radio frequency (RF) reflectometry. RF reflectometry measurements provide sensitive detection of the contact resistance with a wide bandwidth, enabling sub-micrometer-scale topography imaging. We demonstrated our imaging system using a carbon black-polydimethylsiloxane composite tip with a custom-built RF reflectometry setup. The proof-of-concept system achieved a resolution of 230 nm and a bandwidth of the detection system of approximately 8.5 MHz, validating the feasibility of the imaging technique for potential high-throughput cantilever-free scanning probe microscopy. [ABSTRACT FROM AUTHOR]

In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance Ron = 32 mΩ cm2. On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq. [ABSTRACT FROM AUTHOR]

The formation and colonization of biofilms inside the oral cavity are still not understood in detail, although biofilms inside the oral cavity can lead to expensive dental diseases like caries, periodontitis, or the detachment of implants. Such biofilms consist, to a large extent, of proteins, carbohydrates, and other macromolecules. Whereas the interaction of proteins with dental materials is widely studied, the literature does not report interactions of polysaccharides. Here, scanning force spectroscopy is used to investigate the adhesion forces of dextran as an abundant polysaccharide on different dental materials. The focus is dental titanium, accompanied by comparisons with dental gold and silicon as reference material. Different pH values and dental materials mimic representative conditions in the oral cavity. The main finding is that dextran adheres very well to dental materials, but with lower adhesion forces than proteins of similar mass, such as bovine serum albumin. As proteins, the adhesion forces increase with the contact time until a plateau is reached and the forces differ with the dental material. However, in contrast to proteins, pH does not play a role because dextran is uncharged over the measured range between pH 4.5 and pH 13. [ABSTRACT FROM AUTHOR]

Plasma etching is a crucial step in semiconductor manufacturing. High cleanliness and wafer‐to‐wafer reproducibility in the etching chamber are essential in order to successfully achieve nanometer‐sized integrated functions on the wafer. The trend toward the application of more aggressive plasma compositions leads to higher demands on the plasma resistance of the materials used in the etching chamber. Due to its excellent etch resistance, yttrium aluminum garnet Y3Al5O12 (YAG) is starting to replace established materials like SiO2 or Al2O3 in this kind of application. In this study, reactive spark plasma sintering (SPS) was used to manufacture highly dense YAG ceramics from the respective oxides. In addition, yttrium was replaced with heavier lanthanoids (Er, Lu), intending to investigate the role of the A‐site cation in the garnet type structure on the plasma erosion behavior. The produced materials were exposed to fluorine‐based etching plasmas mimicking the conditions in the semiconductor manufacturing apparatus and the erosion behavior was characterized by atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM), and profilometry. The induced chemical gradient in the samples is limited to a few nanometers below the surface, which makes its characterization challenging. For advanced analysis, we developed a correlative characterization method combining SIMS and scanning TEM (STEM)–energy‐dispersive spectroscopy (EDS) enabling us to examine the structural and chemical changes in the reaction layer locally resolved. In the case of lanthanoid aluminates, an altered reaction layer and reduced fluorine penetration compared to YAG were found. However, a correlation between the characteristics of the induced chemical gradient and the determined physical erosion rates was not evident. [ABSTRACT FROM AUTHOR]

[Display omitted] Conjugating biomolecules, such as antibodies, to bioconjugate moieties on lipid surfaces is a powerful tool for engineering the surface of diverse biomaterials, including cells and nanoparticles. We developed supported lipid bilayers (SLBs) presenting well-defined spatial distributions of functional moieties as models for precisely engineered functional biomolecular-lipid surfaces. We used quartz crystal microbalance with dissipation (QCM-D) and atomic force microscopy (AFM) to determine how vesicles containing a mixture of 1,2-dipalmitoyl- sn - glycero -3-phosphatidylcholine (DPPC) and 1,2-distearoyl- sn - glycero -3-phosphoethanolamine-N-[azido(polyethylene glycol)-2000] (DSPE-PEG-N 3) form SLBs as a function of the lipid phase transition temperature (T m). Above the DPPC T m , DPPC/DSPE-PEG-N 3 vesicles form SLBs with functional azide moieties on SiO 2 substrates via vesicle fusion. Below this T m , DPPC/DSPE-PEG-N 3 vesicles attach to SiO 2 intact. Intact DPPC/DSPE-PEG-N 3 vesicles on the SiO 2 surfaces fuse and rupture to form SLBs when temperature is brought above the DPPC T m. AFM studies show uniform and complete DPPC/DSPE-PEG-N 3 SLB coverage of SiO 2 surfaces for different DSPE-PEG-N 3 concentrations. As the DSPE-PEG-N 3 concentration increases from 0.01 to 6 mol%, the intermolecular spacing of DSPE-PEG-N 3 in the SLBs decreases from 4.6 to 1.0 nm. The PEG moiety undergoes a mushroom to brush transition as DSPE-PEG-N 3 concentration varies from 0.1 to 2.0 mol%. Via copper-free click reaction, IgG was conjugated to SLB surfaces with 4.6 nm or 1.3 nm inter-DSPE-PEG-N 3 spacing. QCM-D and AFM data show; 1) uniform and complete IgG layers of similar mass and thickness on the two types of SLB; 2) a higher-viscosity/less rigid IgG layer on the SLB with 4.6 nm inter-DSPE-PEG-N 3 spacing. Our studies provide a blueprint for SLBs modeling spatial control of functional macromolecules on lipid surfaces, including surfaces of lipid nanoparticles and cells. [ABSTRACT FROM AUTHOR]

[Display omitted] This study posits that thermal effects play a substantial role in influencing interfacial processes on calcite, and consequently impacting its mechanochemical properties. This work interrogates the temperature-dependence of friction and wear at nanoscale contacts with calcite single crystals at low air humidity (≤ 3–10 % RH) by AFM. Three logarithmic regimes for the velocity-dependence of friction are identified. Below T c ∼ 70 °C, where friction increases with T , there is a transition from velocity-weakening (W 1) to velocity-strengthening friction (S 1). Above T c ∼ 70 °C, where friction decreases with T , a second velocity-strengthening friction regime (S 0) precedes velocity-weakening friction (W 1). The low humidity is sufficient to induce atomic scale changes of the calcite cleavage plane due to dissolution-reprecipitation, and more so at higher temperature and 10 % RH. Meanwhile, the surface softens above T c –likely owing to lattice dilation, hydration and amorphization. These interfacial changes influence the wear mechanism, which transitions from pit formation to plowing with increase in temperature. Furthermore, the softening of the surface justifies the appearance of the second velocity-strengthening friction regime (S 0). These findings advance our understanding of the influence of temperature on the interfacial and mechanochemical processes involving calcite, with implications in natural processes and industrial manufacturing. [ABSTRACT FROM AUTHOR]

This paper describes the improvements in microwave absorbency and other functional properties of silicone rubber-based nanocomposite sheets with iron (Fe)- and nickel (Ni)-deposited nanographite (NG). NG was synthesized using the ball milling method and then acid functionalized. The deposition was performed on acid-functionalized NG dispersed in an electrochemical bath containing Fe and Ni salts in a designed fluidized bed reactor system. The electrolyte concentration, stirring speed, applied current, and time of electrolysis were optimized. X-ray diffraction, Fourier transform infrared spectroscopy, Brenner–Emmet–Teller analysis, transmission electron microscopy, scanning electron microscopy, and atomic force microscopy were used to characterize the structural as well as morphological properties of the material. The applied current, average particle size, and density of the electrolyte–powder suspension have a significant impact on the material's morphology and microwave absorption capabilities. To measure tensile strength, electrical impedance, and microwave absorption in the 2–20 GHz range, co-deposited nanographite was mixed in a silicone rubber matrix and molded into 1.00–2.00 mm thick nanocomposite sheets. The nanocomposite sheets demonstrated a − 15 dB reflection loss in the 9–13 GHz frequency band with an absorber thickness of 1.24 mm. [ABSTRACT FROM AUTHOR]

Considering the potential for morphological changes and the adjustment of the sp3/sp2 ratio in diamond-like carbon (DLC) coatings, and consequently the possibility of adjusting the properties of self-lubricating, hardness, and wear of these coatings, the present study investigates the effect of varying the power applied during the deposition of coatings using plasma-enhanced chemical vapor deposition (PECVD) method. Raman spectroscopy, Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), nanoindentation, wear, and wear depth tests were employed for this purpose. The results obtained from the Raman spectroscopy indicated that the percentage of sp3 hybridization, as well as the amount of internal stress, increased with the higher applied power of the coating. AFM results also reveal an increase in surface roughness with increasing applied power, and FESEM results indicate a reduction in the diameter of DLC grains with increasing applied power. Moreover, the alternating increase in hardness and modulus of elasticity, along with a decrease in friction coefficient and wear depth, are among the other effects of increasing the applied power. Therefore, the results of this research suggest an enhancement in the tribological properties of the applied coating at higher powers (up to 250 W). [ABSTRACT FROM AUTHOR]

The synthesis of polyurethane elastomers with repair abilities and robust mechanical properties under mild conditions remain a great challenge. Numerous studies have shown that dynamic disulfide bonds are the important chemical chain unit of polyurethane with self-healing properties. Therefore, the synthesis of diols containing a disulfide bond chain unit is the key for achieving polyurethane with self-healing properties. In this study, three kinds of hydroxyl-capping diol fluorescent molecules containing disulfide were synthesized from 2,20-dithiobisbenzoic acid (DTSA) with glycol (EG), 1,4-butanediol (BDO) or 1,6-hexanediol (HDO) via esterification. The structures and properties of the synthesized aromatic disulfide diol and the derived disulfide-containing self-healing fluorescent polyurethane (SFPU) were characterized using proton nuclear magnetic resonance (¹H NMR and 13C NMR) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), small-angle X-ray scattering (SAXS), dynamic mechanical analysis (DMA), and other techniques. The results demonstrated the successful synthesis of diols containing aromatic disulfide bonds. The self-healing rate of polyurethane elastomers, with aromatic disulfide diols introduced as hard segments, was approximately 61.50% at 20 1C. Polyurethane elastomers exhibited excellent mechanical properties and demonstrated fluorescence. These novel self-healing fluorescent polyurethane elastomers can be widely used in industries such as building, clothing, furniture, medical materials, armaments, and packaging. This research study will have some guiding significance in expanding the application of self-healing fluorescent polyurethane. [ABSTRACT FROM AUTHOR]

Molecular association of lipid membranes is an important tool to understand their biological functions. Engineered nano/microscopic lipid surface structures enable controlled surface properties such as adhesion, wetting and molecular recognition, correlated to the surface topography, molecular structure and interactions. In this work, patterned nanometer scale 2D lipidic channels from two cationic phospholipids, namely, 1,2-distearoyl-sn-glycero-3-ethylphosphocholine (EPC) and 1,2-dioleoyl-snglycero-3-ethylphosphocholine (EPCU) are reported along with the zwitter-ionic lipid 1,2-dipalmitoylsn-glycero-3-phosphatidylcholine (DPPC) as a reference. Atomic force microscopy was used to probe the exotic 2D lipidic channels formed on the mica substrate. Analyzing the isotherms comprising 2D surface pressure as a function of the mean molecular area provided insights into hydrocarbon chain ordering and packing, lateral compressibility/elasticity, and head group influence on that one leaflet of a bilayer. The condensed phase surface topography revealed 2D multiple-fold lipidic vesicles fused anisotropically into regular ordered channels of 30-50 nm height and 300-500 nm width. The results revealed condensation of the monolayer into higher ordered phases as a function of the chemical structure of the lipids. The chemical reactivity and electronic properties of the pure lipids and lipids in association with tryptophan amino acids were unravelled adopting density-functional theory (DFT) calculations. The packing and surface elastic properties of the lipid monolayers during interaction with tryptophan revealed phase separation in the surface architecture as a result of the occurrence of predominant electrostatic, hydrogen-bonding and hydrophobic interactions between the components, as revealed from the DFT results. [ABSTRACT FROM AUTHOR]

Kidney stones are a pervasive disease with notoriously high recurrence rates that require more effective treatment strategies. Herein, tartronic acid is introduced as an efficient inhibitor of calcium oxalate monohydrate (COM) crystallization, which is the most prevalent constituent of human kidney stones. A combination of in situ experimental techniques and simulations are employed to compare the inhibitory effects of tartronic acid with those of its molecular analogs. Tartronic acid exhibits an affinity for binding to rapidly growing apical surfaces of COM crystals, thus setting it apart from other inhibitors such as citric acid, the current preventative treatment for kidney stones. Bulk crystallization and in situ atomic force microscopy (AFM) measurements confirm the mechanism by which tartronic acid interacts with COM crystal surfaces and inhibits growth. These findings are consistent with in vivo studies that reveal the efficacy of tartronic acid is similar to that of citric acid in mouse models of hyperoxaluria regarding their inhibitory effect on stone formation and alleviating stone‐related physical harm. In summary, these findings highlight the potential of tartronic acid as a promising alternative to citric acid for the management of calcium oxalate nephropathies, offering a new option for clinical intervention in cases of kidney stones. [ABSTRACT FROM AUTHOR]

This paper describes different growth modes of AlN layers on micro-cone patterned c-sapphire substrates (μ-PSSs) using plasma-assisted molecular beam epitaxy. Ordered arrays of AlN nanoprisms and microrods were selectively grown on the tips of μ-PSS's microcones according to a bottom-up formation mechanism using sequential migration enhanced and metal-modulated epitaxy (MME) under metal-rich growth conditions at 820 °C. Transmission electron microscopy revealed structurally perfect AlN regions above the tips of the μ-PSSs, which initiate as inverted nanopyramids with {10 11 ¯ } side faces, evolving into hexagonal nanoprisms with orientations of {1 1 ¯ 00} and (0001) for side and top surfaces, respectively. The diameter and height of these ordered hexagonal nanoprisms, which have a 60% probability of nucleating, were about 1 μm. Long-term MME growth of these nanoprisms in both vertical and lateral directions led to the formation of AlN(0001) microrods with a maximum possible diameter of two micrometers and a height of up to 6 μm. Atomic force microscopy revealed a mixed step-flow and 2D nucleation growth mechanism for the flat tops of these AlN nanoprisms and microrods with an average surface roughness of 1–2 monolayers. Micro-Raman spectroscopy demonstrated narrow E2 (high) linewidths of 3.8 and 4.2 cm−1 for essentially stress-free AlN nanoprisms and microrods, respectively. [ABSTRACT FROM AUTHOR]

This review examines the significant role of Atomic Force Microscopy (AFM) in neurobiological research and its emerging clinical applications in diagnosing neurological disorders and central nervous system (CNS) tumours. AFM, known for its nanometre-scale resolution and piconewton-scale force sensitivity, offers ground breaking insights into the biomechanical properties of brain cells and tissues and their interactions within their microenvironment. This review delves into the application of AFM in non-clinical settings, where it characterizes molecular, cellular, and tissue-level aspects of neurological disorders in experimental models. This includes studying ion channel distribution, neuron excitability in genetic disorders, and axonal resistance to mechanical injury. In the clinical context, this article emphasizes AFM's potential in early detection and monitoring of neurodegenerative diseases, such as Alzheimer's Disease (AD), Parkinson's Disease (PD) and amyotrophic lateral sclerosis (ALS), through biomarker characterization in biofluids such as cerebrospinal fluid and blood. It also examines the use of AFM in enhancing the grading and treatment of CNS tumours by assessing their stiffness, providing a more detailed analysis than traditional histopathological methods. Despite its promise, this review acknowledges challenges in integrating AFM into clinical practice, such as sample heterogeneity and data analysis complexity, and discusses emerging solutions such as machine learning and neural networks to overcome these hurdles. These advancements, combined with commercial nanotechnology platforms, herald a new era in personalized treatment strategies for management, treatment and diagnosis of neurological disorders. Highlights: • Focus on AFM's unique capabilities in neurobiology for detailed biomechanical analysis of brain tissues and cells. • Explore AFM's clinical potential in diagnosing neurodegenerative diseases and improving current CNS tumour grading system. • Address challenges in clinical integration of AFM and discusses potential solutions. [ABSTRACT FROM AUTHOR]

Background: Over the past several decades, the use of biochemical and fluorescent tags has elucidated mechanistic and cytological processes that would otherwise be impossible. The challenging nature of certain nuclear proteins includes low abundancy, poor antibody recognition, and transient dynamics. One approach to get around those issues is the addition of a peptide or larger protein tag to the target protein to improve enrichment, purification, and visualization. However, many of these studies were done under the assumption that tagged proteins can fully recapitulate native protein function. Results: We report that when C-terminally TAP-tagged CENP-A histone variant is introduced, it undergoes altered kinetochore protein binding, differs in post-translational modifications (PTMs), utilizes histone chaperones that differ from that of native CENP-A, and can partially displace native CENP-A in human cells. Additionally, these tagged CENP-A-containing nucleosomes have reduced centromeric incorporation at early G1 phase and poorly associates with linker histone H1.5 compared to native CENP-A nucleosomes. Conclusions: These data suggest expressing tagged versions of histone variant CENP-A may result in unexpected utilization of non-native pathways, thereby altering the biological function of the histone variant. [ABSTRACT FROM AUTHOR]