1. Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate
- Author
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Carneiro, Elodie, Rennesson, Stéphanie, Tamariz, Sebastian, Harrouche, Kathia, Semond, Fabrice, Medjdoub, Farid, WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), EasyGaN, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), RENATECH, BPI France, This research was funded by the French National grant GaNeXT ANR-11-LABX-0014, and by a BPI France aid for innovation., Renatech Network, CMNF, and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
- Subjects
[SPI]Engineering Sciences [physics] ,MBE ,mm-wave ,Trapping ,load pull ,GaN-on-Si ,HEMT - Abstract
International audience; In this work, sub-micron-thick AlN/GaN transistors (HEMTs) grown on a silicon substrate for high-frequency power applications are reported. Using molecular beam epitaxy, an innovative ultrathin step-graded buffer with a total stack thickness of 450 nm enables one to combine an excellent electron confinement, as reflected by the low drain-induced barrier lowering, a low leakage current below 10 µA/mm and low trapping effects up to a drain bias V DS = 30 V while using sub-150 nm gate lengths. As a result, state-of-the-art GaN-on-silicon power performances at 40 GHz have been achieved, showing no degradation after multiple large signal measurements in deep class AB up to V DS = 30 V. Pulsed-mode large-signal characteristics reveal a combination of power-added efficiency (PAE) higher than 35% with a saturated output power density (P OUT) of 2.5 W/mm at V DS = 20 V with a gate-drain distance of 500 nm. To the best of our knowledge, this is the first demonstration of high RF performance achieved with sub-micron-thick GaN HEMTs grown on a silicon substrate.
- Published
- 2023