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Perovskite solar cells (PSCs) have experienced an unprecedented advancement in the last decade owing to their astonishingly attractive properties, especially high-power conversion efficiency (PCE). In this study, the influence of reduced graphene oxide (rGO) on the photovoltaic performance of perovskite solar cells prepared via solution processes-based spin coating method was investigated. X-ray Diffraction (XRD), Fourier Transform Infrared spectrometer (FTIR), UV-visible spectrophotometry, Scanning Electron Microscopy (SEM) were used to study the properties of the prepared films. ITO/MAPbBr3/Gr and ITO/rGO/MAPbBr3/Gr planar PSCs were fabricated via spin coating method. ITO/rGO/MAPbBr3/Gr film achieved a power conversion efficiency (PCE) of 4.1 short circuit current (Jsc) of 7.5 mAcm−2 and fill factor (FF) of 61.2% compared to a PCE of 3.6%, Jsc of 6.6 mAcm−2 and FF of 58.0% achieved compared to PCE of 3.6%, %, Jsc of 6.6 mAcm−2 and FF of 58.0% achieved by ITO/MAPbBr3/Gr film. The PSC demonstrated the percentage enhancement value of 16.80% when modified with rGO. This study shows that rGO generated functional groups that act as conducting bridge in reducing the contact resistance between interface of the device.

Due to the superb characteristics of its light-harvesting, the Perovskite sensitizer ABX3 (A = CH3NH3, B = Pb, Sn, and X = Cl, Br, I) has recently attracted great attention. Perovskite is composed of inexpensive and earth abundant materials. It is processable at low temperature preferably via the printing techniques. In addition, the charges in the bulk material after light absorption that enhances low loss in energy charge generation and collection were generated freely. In this research work, Solar cell capacitance simulator (SCAPS-1D) was used to harnessing the real device hybrid Perovskite (PSC) solar cell with material parameters obtained from literatures and experiment used in the definition panel and the arrangement of an hybrid (FTO/ZnO/CZTS/PSCS/CZTS/HTM) model in the SCAPS-1D simulator. From the simulated results obtained the Band gap diagram and other curves were constructed. The efficiency greater than twenty percent (>20%) was achieved, which shows that having a combination of two different absorbers were achievable and calling for great attention from the researchers.

Monolayer Molybdenum Disulfide (MoS2) exhibits a direct bandgap characterized by strong visible photoluminescence, high on/off ratio, high optical transparency, low dissipation rate, and light absorption in a wide energy spectrum. The influence of different deposition voltages and durations on the optical and photoluminescent characteristics was investigated using Raman spectroscopy, UV–visible spectrophotometry, and photoluminescence spectroscopy. All samples were analyzed for optical properties to confirm their suitability for optoelectronics. The energy band gap and Urbach energy (band tail width) of all films were 1.87 to 2.52 eV and 0.31 to 0.49 eV, respectively. The findings reveal a correlation between enhanced absorption properties and a decrease in the bandgap of the semiconducting film layers, implying the potential utility of the deposited films as efficient solar absorbers. Furthermore, the improved transmittance observed within the visible wavelength range suggests their applicability as effective window layers in thin-film photodiodes. It was established that varying the voltage and time of deposition alone can enhance the optoelectronic performance of the material in any device.