17 results on '"A. K. L. Chee"'
Search Results
2. DVB-T2 MISO field measurements and a calibrated coverage gain predictor.
- Author
-
Junge Qi, Jörg Robert, K. L. Chee, Mariem Slimani, and Jan Zöllner 0001
- Published
- 2012
- Full Text
- View/download PDF
3. High gain optical parametric amplification in ultra-silicon-rich nitride (USRN) waveguides
- Author
-
Ezgi Sahin, Ju Won Choi, Anant Agarwal, Kelvin J. A. Ooi, A. K. L. Chee, Lionel C. Kimerling, Ting Wang, Dawn T. H. Tan, Peng Xing, and Doris K. T. Ng
- Subjects
Materials science ,Silicon ,business.industry ,Nonlinear optics ,chemistry.chemical_element ,Nitride ,Photon energy ,Optical parametric amplifier ,Optical pumping ,chemistry.chemical_compound ,chemistry ,Silicon nitride ,Optoelectronics ,Absorption (electromagnetic radiation) ,business - Abstract
Optical parametric amplifiers rely on the high Kerr nonlinearities and low two-photon absorption (TPA) to achieve large optical amplification. The high Kerr nonlinearity enables efficient energy transfer from the optical pump to the signal. On the other hand, the TPA process competes with the amplification process, and thus should be eliminated. Through Miller’s rule and Kramers-Kronig relations, it is known that the material’s Kerr nonlinearity scales inversely proportional to the band-gap, while the TPA process occurs when the photon energy is larger than the band-gap energy and Urbach tails, thus presenting a trade-off scenario. Based on these requirements, we have designed a CMOScompatible, band-gap engineered nitride platform with ultra-rich silicon content. The silicon nitride material is compositionally engineered to have a band-gap energy of 2.1 eV, which is low enough to confer a high Kerr nonlinearity, but still well above the energy required for the TPA process to occur. The new material, which we called ultra-silicon-rich nitride (USRN), has a material composition of Si7N3, a high Kerr nonlinearity of 2.8x10-13 cm2/W, and a negligible TPA coefficient. In optical amplification experiments, 500 fs pulses at 14 W peak power and centered around 1560 nm are combined with continuous wave signals. The maximum parametric gain of the signal could reach 42.5 dB, which is one of the largest gains demonstrated on CMOS platforms to date. Moreover, cascaded four-wave mixing down to the third idler, which was usually observed for mid-infrared silicon waveguides, is unprecedentedly observed at this spectrum.
- Published
- 2018
- Full Text
- View/download PDF
4. Supercontinuum generation in bandgap engineered, back-end CMOS compatible silicon rich nitride waveguides
- Author
-
Dawn T. H. Tan, A. K. L. Chee, Qian Wang, Siu-Kit Ng, George F. R. Chen, Yeow-Teck Toh, Doris K. T. Ng, and Ting Wang
- Subjects
Silicon photonics ,Materials science ,Silicon ,business.industry ,Band gap ,Nonlinear optics ,chemistry.chemical_element ,Nitride ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Supercontinuum ,Nonlinear system ,chemistry.chemical_compound ,chemistry ,Silicon nitride ,Optoelectronics ,business - Abstract
CMOS-compatible nonlinear optics platforms with negligible nonlinear losses and high nonlinearity are of great merit. Silicon, silicon nitride and Hydex glass have made significant headway in nonlinear optical signal processing, though none of these platforms possesses the highly sought after combination of high nonlinearity and negligible nonlinear losses. In this manuscript, we present a nonlinear optics platform based on silicon-rich nitride, deposited at a low temperature of 250°C compatible with back-end CMOS processing. The silicon-rich nitride is designed and engineered in composition to have a bandgap of 2.05 eV, such that the two-photon absorption edge is well below 1.55 μm. The designed and developed waveguides have a nonlinear parameter of 550 W−1/m, 500 times larger than that in silicon nitride waveguides, while at the same time not possessing two-photon and free-carrier losses. Using 500-fs pulses, we generate supercontinuum exceeding 0.6 of an octave.
- Published
- 2015
- Full Text
- View/download PDF
5. CMOS compatible USRN:Si7N3 for supercontinuum generation, parametric amplification and four-wave mixing
- Author
-
Dawn T. H. Tan, A. K. L. Chee, Kelvin J. A. Ooi, Doris K. T. Ng, and Ting Wang
- Subjects
Silicon photonics ,Materials science ,Silicon ,business.industry ,Physics::Optics ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Optical parametric amplifier ,Supercontinuum ,010309 optics ,Wavelength ,Four-wave mixing ,Nonlinear system ,Optics ,chemistry ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Parametric statistics - Abstract
We experimentally demonstrate a CMOS compatible optical parametric amplifier based on Si 7 N 3 waveguides which are compositionally tailored that the 1550nm wavelength resides within the multi-photon regime, while possessing large nonlinear parameter of 550 W−1/m, 500 times larger than that in Si 3 N 4 .
- Published
- 2017
- Full Text
- View/download PDF
6. Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
- Author
-
Lay Kee Ang, Ting Wang, Dawn T. H. Tan, Shengyong Ng, Q. Wang, L. C. Kimerling, Kelvin J. A. Ooi, Doris K. T. Ng, A. K. L. Chee, Anuradha M. Agarwal, Massachusetts Institute of Technology. Materials Processing Center, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Massachusetts Institute of Technology. Microphotonics Center, Agarwal, Anuradha, and Kimerling, Lionel C
- Subjects
Materials science ,Science ,General Physics and Astronomy ,Physics::Optics ,02 engineering and technology ,Nitride ,01 natural sciences ,Two-photon absorption ,General Biochemistry, Genetics and Molecular Biology ,Article ,010309 optics ,chemistry.chemical_compound ,0103 physical sciences ,Absorption (electromagnetic radiation) ,Multidisciplinary ,business.industry ,Amplifier ,General Chemistry ,021001 nanoscience & nanotechnology ,Optical parametric amplifier ,Silicon nitride ,chemistry ,CMOS ,Absorption edge ,Optoelectronics ,0210 nano-technology ,business - Abstract
CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si[subscript 7]N[subscript 3], that possesses a high Kerr nonlinearity (2.8 × 10[superscript −13] cm[superscript 2] W[superscript −1]), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform., Singapore Ministry of Education. Academic Research Fund (AcRF) Tier 2 grant, Singapore. Agency for Science, Technology and Research (PSF grant), SUTD-MIT International Design Centre (IDC), Temasek Laboratories, National Research Foundation of Singapore (Medium Sized Centre Program)
- Published
- 2017
7. Ultra-silicon-rich nitride devices for CMOS nonlinear optics
- Author
-
Siu-Kit Ng, Ting Wang, Yeow-Teck Toh, A. K. L. Chee, George F. R. Chen, Qian Wang, Dawn T. H. Tan, and Doris K. T. Ng
- Subjects
Materials science ,Silicon ,chemistry ,CMOS ,business.industry ,Optoelectronics ,chemistry.chemical_element ,Nonlinear optics ,Nitride ,business - Published
- 2016
- Full Text
- View/download PDF
8. Wavelength selective mode division multiplexing on a silicon chip
- Author
-
Dawn T. H. Tan, Kelvin J. A. Ooi, A. K. L. Chee, George F. R. Chen, Ting Wang, and Lay Kee Ang
- Subjects
Fabrication ,Materials science ,business.industry ,Physics::Optics ,Multiplexing ,Atomic and Molecular Physics, and Optics ,Mode division multiplexing ,Wavelength ,Optics ,Pulse compression ,Time-division multiplexing ,Wavelength-division multiplexing ,Silicon chip ,Hardware_ARITHMETICANDLOGICSTRUCTURES ,business ,Computer Science::Information Theory - Abstract
Multiplexing of optical modes in waveguides is demonstrated using coupled vertical gratings. The device utilizes sinusoidally corrugated waveguides of different widths with a period designed to multiplex information at 1.55 µm. The design, fabrication and characterization of devices is performed. Multiplexing of modes is demonstrated in optical structures which support 3 and 5 quasi-TE modes. The design utilizes counter-propagating modes in periodic structures, thus enabling the device to combine its mode division multiplexing capabilities with wavelength division multiplexing functionalities to further augment the multiplexing capacity of the device.
- Published
- 2015
9. Supercontinuum Generation in Bandgap Engineered Silicon Rich Nitride Waveguides – a New Back-End CMOS Compatible Nonlinear Optics Platform
- Author
-
Siu-Kit Ng, Doris K. T. Ng, Ting Wang, Qian Wang, D. T. H. Tan, Yeow Teck Toh, George Feng Rong Chen, and A. K. L. Chee
- Subjects
Materials science ,Silicon ,business.industry ,Band gap ,Nonlinear optics ,chemistry.chemical_element ,Nitride ,Octave (electronics) ,Supercontinuum ,chemistry.chemical_compound ,Silicon nitride ,chemistry ,Optoelectronics ,business ,Self-phase modulation - Abstract
Supercontinuum generation over 0.6 of an octave is demonstrated at 1.55µm on silicon-rich nitride waveguides. The SRN films are engineered to have a band gap of 1.85eV, and do not suffer from two-photon absorption at 1.55µm. The SRN waveguides have a large nonlinear parameter of 550W-1/m, 500 times larger than that in silicon nitride waveguides.
- Published
- 2015
- Full Text
- View/download PDF
10. Mode division multiplexing using chip-scale silicon coupled vertical gratings
- Author
-
Dawn T. H. Tan, George F. R. Chen, Lay Kee Ang, Ting Wang, A. K. L. Chee, and Kelvin J. A. Ooi
- Subjects
Mode volume ,Waveguide (electromagnetism) ,Optics ,Silicon photonics ,Materials science ,Extinction ratio ,business.industry ,Hybrid silicon laser ,Silicon on insulator ,business ,Optical add-drop multiplexer ,Coupling coefficient of resonators - Abstract
Mode division multiplexing of modes in a silicon waveguide supporting three optical modes is demonstrated in the silicon on insulator platform. Cross-talk suppression of 17dB and 12dB are obtained for the zeroth and second order modes respectively. The extinction bandwidth is observed to increase with the mode order indicating a stronger cross coupling coefficient as the mode order is increased. The extinction ratio is also observed to increase from 5 dB to 15dB and >25dB as the mode order is increased, implying an increasing cross coupling coefficient.
- Published
- 2015
- Full Text
- View/download PDF
11. Ultralow Power, Broadband Continuous Wave Four Wave Mixing in Silicon Rich Nitride Waveguides
- Author
-
Lay Kee Ang, Doris K. T. Ng, D. T. H. Tan, Qian Wang, Ting Wang, Kelvin J. A. Ooi, and A. K. L. Chee
- Subjects
Amplified spontaneous emission ,Materials science ,Silicon ,business.industry ,chemistry.chemical_element ,Nitride ,Two-photon absorption ,chemistry.chemical_compound ,Four-wave mixing ,Optics ,chemistry ,Cross-polarized wave generation ,Silicon nitride ,Continuous wave ,business - Abstract
We demonstrate low power four wave mixing using silicon rich nitride waveguides, engineered in bandgap to eliminate two photon absorption at 1.55µm, while preserving a high nonlinear parameter of 550 W−1/m. Broadband conversion over 170nm is demonstrated using a low pump power of 4.7 dBm.
- Published
- 2015
- Full Text
- View/download PDF
12. A two-stage approach identifies a Q344X mutation in the rhodopsin gene of a Chinese Singaporean family with autosomal dominant retinitis pigmentosa
- Author
-
R Y Y, Yong, C K L, Chee, and E P H, Yap
- Subjects
Male ,Heterozygote ,Rhodopsin ,Singapore ,Genetic Linkage ,Genes, Recessive ,DNA ,Locus Control Region ,Polymerase Chain Reaction ,Pedigree ,Asian People ,Haplotypes ,Tandem Repeat Sequences ,Mutation ,Humans ,Family ,Female ,Polymorphism, Restriction Fragment Length ,Retinitis Pigmentosa ,Genes, Dominant - Abstract
Retinitis pigmentosa (RP) is a group of hereditary retinal diseases in which photoreceptor cells degenerate. It is both clinically and genetically heterogenous. Using a two-stage approach by combining linkage analysis with mutation detection, we have rapidly identified the gene locus and the mutation site of a Chinese Singaporean family with autosomal dominant RP.Three Chinese Singaporean families were tested. One family showed autosomal dominant inheritance pattern, while the other two could be recessive or sporadic. Twelve di-nucleotide markers tightly linked to 6 genes known to be responsible for either autosomal dominant or recessive RP were selected for linkage analysis. Cosegregation of marker and disease inheritance pattern permits identification of the target candidate gene. RFLP (restriction fragment length polymorphism) markers were added to confirm the linkage result prior to the detailed mutation detection study.With this two-stage strategy, the autosomal dominant RP family showed the rhodopsin locus segregating concordantly with the disease. Mutation screening later identified a nonsense mutation 5261CT in the last exon of rhodopsin gene. It predicted a Q344X changes at the C-terminus of the gene product, truncating it by 5 amino acids.This systematic approach facilitates molecular diagnosis of a genetically heterogenous disease like RP. This is the first report of an RP mutation in Singapore. This 5261CT mutation has been reported in the Caucasian, but not the Chinese population. The relatively milder phenotype in this family showed similarity to the reported US family, indicating the correlation of mutation site to severity of disease regardless of ethnicity.
- Published
- 2005
13. A Simple and Efficient MAC for Implementation in a Wireless Sensor Networks
- Author
-
S. V. Rao, P. K. Sivaprasad, J. G. Lim, and K. L. Chee
- Subjects
Key distribution in wireless sensor networks ,Wi-Fi array ,SIMPLE (military communications protocol) ,Computer science ,business.industry ,Multiple Access with Collision Avoidance for Wireless ,business ,Wireless sensor network ,Computer network - Published
- 2003
- Full Text
- View/download PDF
14. Cyclocryotherapy for chronic glaucoma after vitreoretinal surgery
- Author
-
C K L Chee, John D. Scott, and Martin P. Snead
- Subjects
Adult ,Male ,Reoperation ,medicine.medical_specialty ,Intraocular pressure ,Visual acuity ,Time Factors ,genetic structures ,Adolescent ,medicine.medical_treatment ,Eye disease ,Visual Acuity ,Glaucoma ,Cryotherapy ,Vitrectomy ,Cryosurgery ,Ciliary body ,Postoperative Complications ,Ophthalmology ,medicine ,Humans ,Intraocular Pressure ,Aged ,Retrospective Studies ,Pain, Postoperative ,business.industry ,Retinal Detachment ,Retinal detachment ,Middle Aged ,medicine.disease ,eye diseases ,Surgery ,medicine.anatomical_structure ,Chronic Disease ,Female ,sense organs ,medicine.symptom ,business - Abstract
The case records were reviewed of 27 patients with chronic glaucoma after vitreoretinal surgery who underwent 28 cyclocryotherapy procedures between March 1987 and March 1992. The average intraocular pressure after 3 months was between 11.0 and 13.3 mmHg with an average fall of 24-26 mmHg. More than 85% had intraocular pressures of less than 21 mmHg after 3 months; 28% were hypotonic (IOP6 mmHg). Six months postoperatively, 68% maintained or had improved vision. The hypotonic eyes were found to have deterioration in vision more frequently than those with an intraocular pressure5 mmHg (57% compared with 24%). The odds of a hypotonic eye losing vision were 4.27 times greater than for a non-hypotonic eye. Cyclocryotherapy was successful in relief of pain in all 4 eyes which were painful pre-operatively.
- Published
- 1994
15. Visual field loss with capillary non-perfusion in preproliferative and early proliferative diabetic retinopathy
- Author
-
C. K. L. Chee and D. W. Flanagan
- Subjects
Adult ,Male ,medicine.medical_specialty ,genetic structures ,Eye disease ,Vision Disorders ,Cellular and Molecular Neuroscience ,chemistry.chemical_compound ,Ophthalmology ,Diabetes mellitus ,medicine ,Humans ,Fluorescein Angiography ,Aged ,Aged, 80 and over ,Diabetic Retinopathy ,medicine.diagnostic_test ,business.industry ,Retinal ,Diabetic retinopathy ,Middle Aged ,medicine.disease ,Fluorescein angiography ,Sensory Systems ,eye diseases ,Surgery ,Visual field ,Diabetes Mellitus, Type 1 ,chemistry ,Diabetes Mellitus, Type 2 ,Female ,Visual Fields ,business ,Perfusion ,Retinopathy ,Research Article - Abstract
Thirty two eyes of 19 patients with capillary non-perfusion from preproliferative and early proliferative diabetic retinopathy underwent visual field testing on the 30-2 program of the Humphrey visual field analyser. The mean defect (MD) p value was < 5% in 30 (94%) eyes and the corrected pattern standard deviation (CPSD) was < 10% in 31 (97%) eyes. Areas of capillary non-perfusion demonstrated by fundal fluorescein angiography were closely associated with areas of reduced retinal sensitivity in these 31 eyes. More severe visual field defects were present in non-insulin dependent diabetics and in older patients. MD and CPSD p values of less than 0.5% and 1% respectively were found to be associated with non-insulin dependent diabetes (p < 0.05 and p < 0.01 respectively) and with the older age group (p < 0.05). There was no correlation between severity of field defects with hypertension and degree of retinopathy.
- Published
- 1993
16. Behçet's disease: corneal perforation as an ocular manifestation
- Author
-
Jun ShyanWong and Caroline K L. Chee
- Subjects
Male ,medicine.medical_specialty ,genetic structures ,Contact Lenses ,Perforation (oil well) ,Disease ,Behcet's disease ,Asymptomatic ,Corneal Diseases ,Cornea ,Ophthalmology ,medicine ,Humans ,Cyanoacrylates ,Aged ,Aged, 80 and over ,Autoimmune disease ,Rupture, Spontaneous ,medicine.diagnostic_test ,business.industry ,Behcet Syndrome ,Corneal perforation ,medicine.disease ,eye diseases ,stomatognathic diseases ,Left eye ,Eye examination ,sense organs ,medicine.symptom ,business - Abstract
PurposeAlthough ocular manifestations are common among patients with Behcet's disease, corneal perforation has not been reported in the literature. We report an unusual case of Behcet's disease with corneal perforation as the main ocular involvement. Methods/resultsAn elderly Chinese patient was referred for eye examination because of clinical suspicion of Behcet's disease. Eye examination showed evidence of long-standing autoimmune disease of the eye, mild iritis and a corneal perforation in the left eye. Despite evidence of chronicity and corneal perforation, the patient was asymptomatic. The perforation was successfully treated with cyanoacrylate glue. ConclusionsWhile anterior segment involvement is common in Behcet's disease, this case highlights an unusual and hitherto unreported ocular involvement.
- Published
- 1996
- Full Text
- View/download PDF
17. Optical Parametric Amplification in Ultra - Silicon Rich Nitride Waveguides
- Author
-
Kelvin J. A. Ooi, Qian Wang, D. T. H. Tan, Lay Kee Ang, Siu-Kit Ng, A. K. L. Chee, Doris K. T. Ng, and Thomas D. Wang
- Subjects
Silicon photonics ,Materials science ,Silicon ,business.industry ,chemistry.chemical_element ,02 engineering and technology ,Chemical vapor deposition ,Nitride ,021001 nanoscience & nanotechnology ,01 natural sciences ,Optical parametric amplifier ,010309 optics ,chemistry.chemical_compound ,Silicon nitride ,chemistry ,0103 physical sciences ,Optoelectronics ,Thin film ,0210 nano-technology ,business ,Parametric statistics - Abstract
We fabricated highly-nonlinear (550W−1 m−1) and low loss ultra-rich silicon nitride waveguides that can achieve parametric wavelength conversion over 170nm and parametric amplification of 23dB.
Catalog
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.