Предложена методика модифицирования InP в парах серы, методом локального рентгеноспектрального микроанализа подтверждено её наличие на поверхности. Дляплёнок нанометрового диапазона толщины (до 50 нм), выращенных термическим оксидированием InP с предварительно обработанной в парах серы поверхностью, методом Оже-электронной спектроскопии установлено послойное распределение компонентов. По данным атомно-силовой микроскопии модифицирование InP серой приводит к формированию поверхности с зернистой структурой, более упорядоченной по сравнению с эталоном (собственное термооксидирование фосфида индия). Несмотря на то, что в результирующих плёнках сера не обнаружена, они обладают полупроводниковыми свойствами, тогда как для собственных оксидных слоёв на InP характерна омическая проводимость REFERENCES Markov V. F., Mukhamedzyanov Kh. N., Maskaeva L. N. Materialy sovremennoj jelektroniki [Materials of modern electronics]. Ekaterinburg, Publishing Ural. un-one, 2014, 272 p. (in Russ.) Oktyabrsky S. Fundamentals of III-V Semiconductor MOSFETs. Springer Science LCC, 2013, 447 p. Bessolov V. N., Lebedev M. V. Hal’kogenidnaja passivacija poluprovodnikov AIIIBV [Chalcogenide passivation of III–V semiconductor surfaces]. Semiconductors, 1998, v. 32(11), pp. 1141–1156. https://doi.org/10.1134/1.1187580 Mittova I. Ya., Soshnikov M., Terekhov V. A., Semenov V. N. Termicheskoe oksidirovanie geterostruktur V2S5/InP v kislorode [Thermal oxidation of V2S5/InP heterostructures in oxygen]. Inorganic Materials, 2000, v. 36(10), pp. 975–978. https://doi.org/10.1007/BF02757971 Yoshida N., Chichibu S., Akane T., Totsuka M., Uji H., Matsumoto S., Higuchi H. Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient. Applied Physics Letters, 1993, v. 63(22), pp. 3035–3037. https://doi.org/10.1063/1.110250 Liu K. Z., Shimomura M., Fukuda Y. Band Bending of n-GaP(001) and p-InP(001) Surfaces with and without sulfur treatment studied by Photoemission (PES) and Inverse Photoemission Spectroscopy (IPES). Advanced Materials Research, 2011, v. 222, pp. 56–61. https://doi.org/10.4028/www.scientific.net/AMR.222.56 Tian Sh., Wei Zh., Li Y., Zhao H., Fang X. Surface state and optical property of sulfur passivated InP. Materials Science in Semiconductor Processing, 2014, v. 17, pp. 33–37. https://doi.org/10.1016/j.mssp.2013.08.008 Sundararaman C. S., Poulin S., Currie J. F., Leonelli R. The sulfur-passivated InP surface. Canadian Journal of Physics, 2011, v. 69(3–4), pp. 329–332. https://doi.org/10.1139/p91-055 Lau W. M., Kwok R. W. M., Ingrey S. Controlling surface band-bending of InP with polysulfi de treatments. Surface Science, 1992, v. 271(3), pp. 579–586. https://doi.org/10.1016/0039-6028(92)90919-W Tao Y., Yelon A., Sacher E., Lu Z. H., Graham M. J. S-passivated InP (100)-(1×1) surface prepared by a wet chemical process. Applied Physics Letters, 1992, v. 60(21), pp. 2669–2671. https://doi.org/10.1063/1.106890 Chasse T., Peisert H., Streubel P., Szargan R. Sulfurization of InP(001) surfaces studied by X-ray photoelectron and X-ray induced Auger electron spectroscopies (XPS/XAES). Surface Science, 1995, v. 331–333, pp. 434–440. https://doi.org/10.1016/0039-6028(95)00306-1 Maeyama S., Sugiyama M., Heun S., Oshima M. Electron J. (NH4)2Sx-treated InP(100) surfaces studied by soft x-ray photoelectron spectroscopy. Journal of Electronic Materials, 1996, v. 25(5), pp. 593–596. https://doi.org/10.1007/BF02666509 Sugahara H., Oshima M., Klauser R. Bonding states of chemisorbed sulfur atoms on GaAs. Surface Science, 1991, v. 242(1–3), pp. 335–340. https://doi.org/10.1016/0039-6028(91)90289-5 Koebbel A., Leslie A., Dudzik E., Mitchell C. E. J. X-ray standing wave study of wet-etch sulphur-treated InP 100 surfaces. Applied Surface Science, 2000, v. 166(1–4), pp. 196–200. https://doi.org/10.1016/S0169-4332(00)00413-X Nelson A. J., Frigo S. P., Rosenberg R. Soft x-ray photoemission characterization of the H2S exposed surface of p-InP. Journal of Applied Physics, 1992, v. 71(12), pp. 6086–6089. https://doi.org/10.1063/1.350415 Nelson A. J., Frigo S. P., Rosenberg R. Surface type conversion of InP by H2S plasma exposure: A photoemission investigation. Journal of Vacuum Science & Technology A, 1993, v. 11(4), pp. 1022–1027. https://doi.org/10.1116/1.578807 Kwok R. W. M., Lau W. M. X-ray photoelectron spectroscopy study on InP treated by sulfur containing compounds. Journal of Vacuum Science & Technology A, 1992, v. 10(4), pp. 2515–2520. https://doi.org/10.1116/1.578091 Wang X., Weinberg W. H. Structural model of sulfur on GaAs(100). Journal of Applied Physics, 1994, v. 75(5), pp. 2715–2717. https://doi.org/10.1063/1.356203 Berkovits V. L., Paget D. Optical study of surface dimers on sulfur-passivated (001)GaAs. Applied Physics Letters, 1992, v. 61(15), pp. 1835–1837. https://doi.org/10.1063/1.108390 Bessolov V. N., Konenkova E. V., Lebedev M. V. Sulfi dization of GaAs in alcoholic solutions: a method having an impact on effi ciency and stability of passivation. Materials Science and Engineering: B, 1997, v. 44(1–3), pp. 376–379. https://doi.org/10.1016/S0921-5107(96)01816-8 Sladkopevtsev B. V., Mittova I. Ya., Tomina E. V., Burtseva N. A. Growth of vanadium oxide fi lms on InP under mild conditions and thermal oxidation of the resultant structures. Inorganic Materials, 2012, v. 48(2), pp. 161–168. https://doi.org/10.1134/S0020168512020173 Tretyakov N. N., Mittova I. Ya., Sladkopevtcev B. V., Samsonov A. A. Vlijanie magnetronno napylennogo sloja MnO2 na kinetiku termooksidirovanija InP, sostav i morfologiju sintezirovannyh plenok [The effect of the magnetron-deposited MnO2 layer on the InP thermal oxidation kinetics, composition and morphology of the synthesized fi lms]. Inorganic Materials, 2017, v. 53(1), pp. 41–48. https://doi.org/10.7868/S0002337X17010171 (in Russ.)