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Dielectric interfaces are crucial to the behavior of charged membranes, from graphene to synthetic and biological lipid bilayers. Understanding electrolyte behavior near these interfaces remains a challenge, especially in the case of rough dielectric surfaces. A lack of analytical solutions consigns this problem to numerical treatments. We report an analytic method for determining electrostatic potentials near curved dielectric membranes in a two-dimensional periodic 'slab' geometry using a periodic summation of Green's functions. This method is amenable to simulating arbitrary groups of charges near surfaces with two-dimensional deformations. We concentrate on one-dimensional undulations. We show that increasing membrane undulation increases the asymmetry of interfacial charge distributions due to preferential ionic repulsion from troughs. In the limit of thick membranes we recover results mimicking those for electrolytes near a single interface. Our work demonstrates that rough surfaces generate charge patterns in electrolytes of charged molecules or mixed-valence ions., Comment: Main article: 25 pages, 6 figures; Supplementary Material: 5 pages, 5 figures

Hybrid ionic-electronic conductors have the potential to generate memory effects and neuronal behavior. The functionality of these mixed materials depends on ion motion through thin polarizable channels. Here, we explore different polarization models to show that the current and conductivity of electrolytes is higher when confined by conductors than by dielectrics. We find non-linear currents in both dielectrics and conductors, and we recover the known linear (Ohmic) result only in the two-dimensional limit between conductors. We show that the polarization charge location impacts electrolyte structure and transport properties. This work suggests a mechanism to induce memristor hysteresis loops using conductor-dielectric switchable materials., Comment: 7 pages, 5 figures, A. P. dos Santos and F. Jim\'enez-\'Angeles contributed equally to this work and both are equal first authors

In this paper, we use a regularized theta lifting to construct harmonic Maass forms corresponding to binary theta functions of weight $k \ge 2$ under the $\xi$-operator. As a result, we show that their holomorphic parts have algebraic Fourier coefficients, with compatible Galois action. As an application, we prove rationality properties of coefficients of harmonic Maaass forms corresponding to CM newforms, answering a question of Bruinier, Ono and Rhoades., Comment: 30 pages, comments welcome!

Colloidal crystals formed by size-asymmetric binary particles co-assemble into a wide variety of colloidal compounds with lattices akin to ionic crystals. Recently, a transition from a compound phase with a sublattice of small particles to a metal-like phase in which the small particles are delocalized has been predicted computationally and observed experimentally. In this colloidal metallic phase, the small particles roam the crystal maintaining the integrity of the lattice of large particles, as electrons do in metals. A similar transition also occurs in superionic crystals, termed sublattice melting. Here, we use energetic principles and a generalized molecular dynamics model of a binary system of functionalized nanoparticles to analyze the transition to sublattice delocalization in different co-assembled crystal phases as a function of T, number of grafted chains on the small particles, and number ratio between the small and large particles $n_s$:$n_l$. We find that $n_s$:$n_l$ is the primary determinant of crystal type due to energetic interactions and interstitial site filling, while the number of grafted chains per small particle determines the stability of these crystals. We observe first-order sublattice delocalization transitions as T increases, in which the host lattice transforms from low- to high-symmetry crystal structures, including A20 to BCT to BCC, Ad to BCT to BCC, and BCC to BCC/FCC to FCC transitions and lattices. Analogous sublattice transitions driven primarily by lattice vibrations have been seen in some atomic materials exhibiting an insulator-metal transition also referred to as metallization. We also find minima in the lattice vibrations and diffusion coefficient of small particles as a function of $n_s$:$n_l$, indicating enhanced stability of certain crystal structures for $n_s$:$n_l$ values that form compounds., Comment: AE and HL-R contributed equally to this work

Sublattice melting is the loss of order of one lattice component in binary or ternary ionic crystals upon increase in temperature. A related transition has been predicted in colloidal crystals. To understand the nature of this transition, we study delocalization in self-assembled, size asymmetric binary colloidal crystals using a generalized molecular dynamics model. Focusing on BCC lattices, we observe a smooth change from localized-to-delocalized interstitial particles for a variety of interaction strengths. Thermodynamic arguments, mainly the absence of a discontinuity in the heat capacity, suggest that the passage from localization-to-delocalization is continuous and not a phase transition. This change is enhanced by lattice vibrations, and the temperature of the onset of delocalization can be tuned by the strength of the interaction between the colloid species. Therefore, the localized and delocalized regimes of the sublattice are dominated by enthalpic and entropic driving forces, respectively. This work sets the stage for future studies of sublattice melting in colloidal systems with different stoichiometries and lattice types, and it provides insights into superionic materials, which have potential for application in energy storage technologies., Comment: Hector Lopez-Rios and Ali Ehlen contributed equally

Gross and Zagier conjectured that the CM values (of certain Hecke translates) of the automorphic Green function $G_s(z_1,z_2)$ for the elliptic modular group at positive integral spectral parameter $s$ are given by logarithms of algebraic numbers in suitable class fields. We prove a partial average version of this conjecture, where we sum in the first variable $z_1$ over all CM points of a fixed discriminant $d_1$ (twisted by a genus character), and allow in the second variable the evaluation at individual CM points of discriminant $d_2$. This result is deduced from more general statements for automorphic Green functions on Shimura varieties associated with the group $\mathrm{GSpin}(n,2)$. We also use our approach to prove a Gross-Kohnen-Zagier theorem for higher Heegner divisors on Kuga-Sato varieties over modular curves., Comment: Revised and final version, to appear in Invent. Math., 71 pages

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculation. Our work highlights that charge transfer, zone folding of graphene bands and the covalent bonding between C and Cs atoms are at the origin of the flat energy band formation. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas., Comment: 22 pages, 4 Figures

We apply scanning tunneling spectroscopy to determine the bandgaps of mono-, bi- and trilayer MoS$_2$ grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two additional spectroscopic methods giving extra sensitivity and qualitative insight into the $k$-vector of the tunneling electrons. Employing this comprehensive set of spectroscopic methods in tandem, we deduce a bandgap of $2.53\pm0.08$ eV for the monolayer. This is close to the predicted values for freestanding MoS$_2$ and larger than is measured for MoS$_2$ on other substrates. Through precise analysis of the `comprehensive' tunneling spectroscopy we also identify critical point energies in the mono- and bilayer MoS$_2$ band structures. These compare well with their calculated freestanding equivalents, evidencing the graphene/Ir(111) substrate as an excellent environment upon which to study the many feted electronic phenomena of monolayer MoS$_2$ and similar materials. Additionally, this investigation serves to expand the fledgling field of the comprehensive tunneling spectroscopy technique itself., Comment: 8 pages, 5 figures, accepted

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS$_2$ and a different thermal expansion of graphene and MoS$_2$. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties., Comment: 18 pages, 5 figures, submitted for review

We complete several generating functions to non-holomorphic modular forms in two variables. For instance, we consider the generating function of a natural family of meromorphic modular forms of weight two. We then show that this generating series can be completed to a smooth, non-holomorphic modular form of weights 3/2 and two. Moreover, it turns out that the same function is also a modular completion of the generating function of weakly holomorphic modular forms of weight 3/2, which prominently appear in work of Zagier on traces of singular moduli., Comment: 26 pages

The phase diagrams of correlated systems like cuprates or pnictides high-temperature superconductors are characterized by a topological change of the Fermi surface under continuous variation of an external parameter, the so-called Lifshitz transition. However, the large number of low-temperature instabilities and the interplay of multiple energy scales complicate the study of this phenomenon. Here we first identify the optical signatures of a pressure-induced Lifshitz transition in a clean elemental system, black phosphorus. By applying external pressures above 1.5 GPa, we observe a change in the pressure dependence of the Drude plasma frequency due to the appearance of massless Dirac fermions. At higher pressures, optical signatures of two structural phase transitions are also identified. Our findings suggest that a key fingerprint of the Lifshitz transition in solid state systems, and in absence of structural phase transitions, is a discontinuity of the Drude plasma frequency due to the change of Fermi surface topology.

Here we study the recently introduced notion of a locally harmonic Maass form and its applications to the theory of $L$-functions. In particular, we find finite formulas for certain twisted central $L$-values of a family of elliptic curves in terms of finite sums over canonical binary quadratic forms. This yields vastly simpler formulas related to work of Birch and Swinnerton-Dyer for such $L$-values, and extends beyond their framework to special non-CM elliptic curves., Comment: 29 pages, 4 tables and 1 diagram

Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications., Comment: 10 pages, 5 figures, plus supporting information

We propose an algorithm for computing bases and dimensions of spaces of invariants of Weil representations of $\mathrm{SL}_2(\mathbb{Z})$ associated to finite quadratic modules. We prove that these spaces are defined over $\mathbb{Z}$, and that their dimension remains stable if we replace the base field by suitable finite prime fields., Comment: 15 pages, submitted

We study special values of regularized theta lifts at complex multiplication (CM) points. In particular, we show that CM values of Borcherds products can be expressed in terms of finitely many Fourier coefficients of certain harmonic weak Maa{\ss} forms of weight one. As it turns out, these coefficients are logarithms of algebraic integers whose prime ideal factorization is determined by special cycles on an arithmetic curve. Our results imply a conjecture of Duke and Li and give a new proof of the modularity of a certain arithmetic generating series of weight one studied by Kudla, Rapoport and Yang. The results of the paper are much improved in comparison to the 2012 preprint arxiv:1208.2386 which contained partial results in the same direction. Moreover, they are also an improvement of the main result of the authors thesis (CM values of regularized theta lifts, TU Darmstadt, 2013)., Comment: 53 pages, accepted for publication in Duke Math J