1. Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
- Author
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Serge Zhuiykov, Hongyan Xu, Chengkai Xia, Minsong Wei, Feng Han, Siyan Wang, Christophe Detavernier, Liwei Lin, and Ranjith Karuparambil Ramachandran
- Subjects
Materials science ,Technology and Engineering ,Scanning electron microscope ,2-DIMENSIONAL WO3 ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,BETA-GA2O3 ,chemistry.chemical_compound ,Atomic layer deposition ,NANORODS ,X-ray photoelectron spectroscopy ,Methyl orange ,NANOPARTICLES ,lcsh:TA401-492 ,Nanotechnology ,General Materials Science ,Wafer ,THIN ,Nanoscience & Nanotechnology ,2D semiconductors ,COMPOSITE ,Nano Express ,business.industry ,Correction ,Heterojunction ,Materials Engineering ,TiO2-Ga2O3 ,DEGRADATION ,PERFORMANCE ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Dielectric spectroscopy ,chemistry ,Physics and Astronomy ,atomic layer deposition ,Optoelectronics ,GALLIUM OXIDE ,TIO2 ,Nanorod ,lcsh:Materials of engineering and construction. Mechanics of materials ,n-p heterostructures ,0210 nano-technology ,business - Abstract
Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga2O3 n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga2O3 n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO2-Ga2O3 n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light (λ = 254 nm) irradiation. The improvement of TiO2-Ga2O3 n-p heterostructure capabilities is due to the development of the defects on Ga2O3-TiO2 interface, which were able to trap electrons faster. Graphical Abstract
- Published
- 2019