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2. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

3. Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

4. Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

5. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

6. An Automated Site-Specific Tip Preparation Method for Atom Probe Tomography Using Script-Controlled Focused Ion Beam/Scanning Electron Microscopy.

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