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Ⅲ-Ⅴ compound semiconductor epitaxial single quantum dots (QDs) are a promising candidate for preparing ondemand single photon/ entangled photon pairs/ photon cluster states due to their atom-like discrete energy levels. They can also be directly combined with mature integrated photon technology, making them one of the most promising solid-state quantum systems for preparing high-quality solid-state quantum light sources and constructing scalable quantum networks. In this paper, the growth and modulation of high performance semiconductor QDs using molecular beam epitaxy are discussed. Firstly, the wafer-scale epitaxy of low density InAs/ GaAs QD and the technique of suppressing wetting layer states and obtaining low excitonic fine structure splitting of QDs are introduced. Then, the method of tuning the emission wavelength of QDs through strain layer is introduced, as well as the electrically controlled p-i-n devices to modulate the charges of exciton states and the emission wavelengths. Finally, the recently developed droplet epitaxy growth technique is discussed, aiming to achieve excellent quantum dot light sources. [ABSTRACT FROM AUTHOR]

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