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16 results on '"郑有炓"'

1. GaN HEMT 栅偏置电压与反向传导电压的 解耦合研究.

Author

周 峰, 荣 玉, 郑有炓, and 陆 海

Abstract

Copyright of Electronic Components & Materials is the property of Electronic Components & Materials and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2024
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2. 金属调制分子束外延生长氮化铝薄膜.

Author

刘 欢, 邵鹏飞, 陈松林, 周 辉, 李思琦, 陶 涛, 谢自力, 刘 斌, 陈敦军, 郑有炓, 张 荣, and 王 科

Subjects
MOLECULAR beam epitaxy, EPITAXY, ROUGH surfaces, SURFACE morphology, ALUMINUM nitride
Abstract

Copyright of Journal of Synthetic Crystals is the property of Journal of Synthetic Crystals Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2023

3. 分子束外延高 Al 组分 AlGaN 薄膜及 Si 掺杂研究.

Author

梁 潇, 李思琦, 王中伟, 邵鹏飞, 陈松林, 陶 涛, 谢自力, 刘 斌, 陈敦军, 郑有炓, 张 荣, and 王 科

Subjects
EPITAXIAL layers, MOLECULAR beam epitaxy, THERMAL desorption, EPITAXY, ELECTRON mobility, OPTOELECTRONIC devices
Abstract

Copyright of Journal of Synthetic Crystals is the property of Journal of Synthetic Crystals Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2023

4. Luminescence Property of GaN Nanorod

Author

张荣 Zhang Rong, 谢自力 Xie Zili, 陈鹏 Chen Peng, 郑有炓 Zheng Youdou, 戴姜平 Dai Jiang-ping, 赵红 Zhao Hong, 施毅 Shi Yi, 修向前 Xiu Xiangqian, 韩平 Han Ping, and 杨华 Yang Hua

Subjects
Radiation, Property (philosophy), Materials science, business.industry, Optoelectronics, Nanorod, Condensed Matter Physics, Luminescence, business, Electronic, Optical and Magnetic Materials
Published
2015

5. Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method

Author

郑有炓 Zheng You-dou, 顾然 Gu Ran, 顾书林 Gu Shu-lin, 朱顺明 Zhu Shun-ming, 朱振邦 Zhu Zhen-bang, and 黄时敏 Huang Shi-min

Subjects
Radiation, Materials science, chemistry.chemical_element, Nanotechnology, Condensed Matter Physics, Oxygen, Electronic, Optical and Magnetic Materials, Gas phase, Crystal, Chemical engineering, chemistry, Growth rate, Metalorganic vapour phase epitaxy, Lower activity
Abstract

The behaviors of ZnO films using t-BuOH and H2O as oxygen precursors were investigated.Despite the fact that both t-BuOH and H2O are of lower activity,the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor,due to its more effective prevention of the gas phase pre-reaction.Compared with H2O,ZnO epilayer get a better crystal quality by using t-BuOH as oxygen precursor.And the Hall mobility up to 37.0 cm2·V-1·s-1 is achieved in the flim where t-BuOH is used as oxygen precursor.The research shows that t-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.

Published
2012

6. Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor

Author

郑有炓 Zheng You-dou, 顾然 Gu Ran, 朱顺明 Zhu Shun-ming, 叶建东 Ye Jian-dong, 顾书林 Gu Shu-lin, 朱振邦 Zhu Zhen-bang, and 黄时敏 Huang Shi-min

Subjects
Radiation, Fabrication, Materials science, business.industry, Transconductance, Transistor, Heterojunction, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, law.invention, law, Optoelectronics, Field-effect transistor, Metalorganic vapour phase epitaxy, Photolithography, business
Abstract

The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor(HFET) were reported in this paper.The HFET was grown on α-plane sapphire substrate by metal-organic vapor phase epitaxy(MOVPE) technology,and was fabricated by a conventional photolithography technique combined with wet etching.The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS·mm-1 and mobility of 182 cm2·V-1·s-1 at room temperature.The property was limited by leakage current through the SiO2 gate insulator.At low temperature,the performance was improved due to the reduced leakage current.

Published
2012

7. Effects of Si1-xGex∶C buffers′ Growth Parameters on Ge films by Chemical Vapor Deposition

Author

张荣 Zhang Rong, 韩平 Han Ping, 王荣华 Wang Ronghua, 俞慧强 Yu Huiqiang, 谢自力 Xie Zili, 吴军 Wu Jun, 葛瑞萍 Ge Ruiping, 赵红 Zhao Hong, 郑有炓 Zheng Youdou, and 俞斐 Yu Fei

Subjects
Materials science, Chemical engineering, Hybrid physical-chemical vapor deposition, Plasma-enhanced chemical vapor deposition, Deposition (phase transition), Chemical vapor deposition, Electrical and Electronic Engineering, Combustion chemical vapor deposition, Electron beam physical vapor deposition, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2009

8. Luminescence Property of GaN Nanorod

Author

YANG Hua, 杨华, primary, XIE Zi-li, 谢自力, additional, DAI Jiang-ping, 戴姜平, additional, XIU Xiang-qian, 修向前, additional, ZHAO Hong, 赵红, additional, CHEN Peng, 陈鹏, additional, ZHANG Rong, 张荣, additional, SHI Yi, 施毅, additional, HAN Ping, 韩平, additional, and ZHENG You-dou, 郑有炓, additional

Published
2015
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9. Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

Author

Wang Jian, 王健, primary, Xie Zili, 谢自力, additional, Zhang Yun, 张韵, additional, Teng Long, 滕龙, additional, Li Yecao, 李烨操, additional, Cao Xianlei, 曹先雷, additional, Ding Yu, 丁煜, additional, Liu Bin, 刘斌, additional, Xiu Xiangqian, 修向前, additional, Chen Peng, 陈鹏, additional, Han Ping, 韩平, additional, Shi Yi, 施毅, additional, Zhang Rong, 张荣, additional, and Zheng Youliao, 郑有炓, additional

Published
2013
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11. Application of Nanoimprint Lithography for the Fabrication of Light-Emitting Diodes

Author

张荣 Zhang Rong, 庄喆 Zhuang Zhe, 谢自力 Xie Zili, 修向前 Xiu Xiangqian, 刘斌 Liu Bin, 李烨操 Li Yecao, 赵红 Zhao Hong, 郑有炓 Zheng Youdou, and 陈鹏 Chen Peng

Subjects
Materials science, Fabrication, business.industry, law, Optoelectronics, Electrical and Electronic Engineering, business, Atomic and Molecular Physics, and Optics, Next-generation lithography, Nanoimprint lithography, law.invention, Light-emitting diode
Published
2013

12. Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

Author

刘斌 Liu Bin, 曹先雷 Cao Xianlei, 王健 Wang Jian, 李烨操 Li Yecao, 施毅 Shi Yi, 张荣 Zhang Rong, 丁煜 Ding Yu, 滕龙 Teng Long, 韩平 Han Ping, 张韵 Zhang Yun, 修向前 Xiu Xiangqian, 郑有炓 Zheng Youliao, 谢自力 Xie Zili, and 陈鹏 Chen Peng

Subjects
Materials science, X-ray crystallography, Doping, Analytical chemistry, Electrical and Electronic Engineering, Rapid thermal annealing, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2013

15. Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Composite Substrates

Author

Wu Jun, 吴军, primary, Wang Ronghua, 王荣华, additional, Han Ping, 韩平, additional, Ge Ruiping, 葛瑞萍, additional, Mei Qin, 梅琴, additional, Yu Fei, 俞斐, additional, Zhao Hong, 赵红, additional, Xie Zili, 谢自力, additional, Zhang Rong, 张荣, additional, and Zheng Youdou, 郑有炓, additional

Published
2009
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