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The effect of the output power on difference passivation facet in 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied.The output power of the 980 nm laser diodes with no facet passivation,Si passivation,and ZnSe passivation at the front and the back facet were compared.The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method,and is 42% higher than no facet passivation.The laser diode of no facet passivation is failure at the current is 4.1 A,the Si passivation is 5.1 A,ZnSe passivation is 5.6 A.The reasons of failure for difference passivation were analyzed.In conclusion,the method of ZnSe passivation facet can increase the output power of semiconductor lasers.

High brightness fiber coupling laser module with multi-linear-laser-diode-arrays is designed and fabricated.The laser diode chips are fabricated with a broad waveguide and double quantum well structure by molecular beam epitaxy method.The module contains 6 collimated single linear-laser-diode-arrays which can operate to CW 50 W output power with single emission width of 100 μm,pitch of 500 μm,cavity length of 1 200 μm and 19 emitters per bar.Beam output with high beam quality is obtained by space beam combination and beam shaping afterwards,the combined 6-beam output is focused into a 400 μm-core quartz fiber with NA0.22 by a set of flat-convex cylindrical lens.Finally,a maximum fiber end output power of 195 W with power density of 1.55×105 W/cm2 is achieved,and the total coupling efficiency is as high as 65%.