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The paper reports the effect of low-temperature annealing (up to 150°C) and light irradiation from a quartz mercury lamp (up to 20 min) on the structural, optical, and electrical properties of Indium tin oxide (ITO) films. 0.8 μm thick ITO films were obtained by RF magnetron sputtering of a commercial target on the optically transparent glass substrates in an argon atmosphere without heating. Information about the morphology of the ITO films' surface was obtained and the surface parameters were calculated using the method of atomic force microscopy. It has been found that the low temperature annealing for one hour and short-term irradiation with a quartz mercury lamp lead to an increase in the average size of crystallites and root-mean-square (RMS) surface roughness, a decrease in the resistivity of ITO films as well as an increase in the optical transparency in the visible spectral range. After annealing the ITO film at 150°C, the average crystallite size and RMS roughness of the surface increased approximately three times, and after 20 min irradiation – approximately 1.6 times, respectively. The lowest optical transparency in the visible spectral range among the studied experimental samples was found to be for the non-annealed and non-irradiated ITO films, whereas the highest – for the samples annealed at the highest temperature (150°C) and irradiated for 5 min with the light from the DRT-125 lamp. On the basis of the analysis of optical absorption spectra of ITO films, we detected an increase in their optical band gap from 3.59 eV for the unannealed film up to 3.66 eV with an increase in the annealing temperature of the samples up to 150°C. The resistivity of ITO films decreases with an increase in the annealing temperature up to 150°C and with an increase in the irradiation time with a light of the quartz mercury lamp up to 20 minutes. These results may be useful in the engineering of electronic devices based on the materials of low thermal stability. [ABSTRACT FROM AUTHOR]

microcomposite catalyst based on zinc oxide microstructures and silicon was synthesized for heterogeneous catalysis. ZnO microstructures with elements 6 μm in diameter, 15 μm long, were grown on conductive silicon (001) substrates by the vapor phase method. Methyl orange (C14H14N3NaO3S) was selected as an organic dye for testing the photocatalytic and photoelectrocatalytic properties of ZnO microstructures. The sample was placed in an aqueous solution of methyl orange in order to perform a photocatalytic decomposition of the dye. DRT-125 quartz lamp with a radiation power of no more than 26 W was used as the radiation source in the wavelength range from 315 to 400 nm. The sample with the aqueous solution of dye in a standard 3.5 ml quartz quvet was irradiated with the lamp at a distance of 10 cm from it. In order to perform the photoelectrocatalytic decomposition of the dye in the aqueous solution, an electric field of 1.5 V was applied between ZnO/Si and Al electrodes, that were simultaneously irradiated with UV for 5 cycles lasting 20 minutes (100 minutes). The degradation kinetics of the dye was determined by changing its concentration, on the basis of the optical density measurement at the absorption maximum of the dye (465 nm) using a Specord M 40 spectrometer. During the photocatalysis, the concentration of the dye decreased by 41 % in 100 min, and during the photoelectrocatalysis, by 59 % in 100 min. First-order kinetics was used for the kinetic analysis of the catalytic reactions. The reactions rate constants were found to be k = 5.1·10-3 min-1 in the case of the photocatalysis, and k = 8.8 ·10-3 min-1 in the case of the photoelectrocatalysis. The increase in the efficiency of the dye decomposition in the latter case was associated with a more efficient redistribution of charge when voltage (1.5 V) was applied and with a higher amount of hydroxyl radicals on the surface of the catalyst. [ABSTRACT FROM AUTHOR]

Wastewater treatment to remove organic impurities remains the most important task of water resources recovery facilities. A promising method of purification of water from the organic dyes is photocatalysis with semiconductor materials. The most known and popular photoactive materials are based on TiO2, WO3, Zn2SnO4 and ZnO. The catalysts based on ZnO are low cost, stable, non-toxic and do not require reactivation. A composite photocatalyst formed by a layer of ZnO nuclei with n-type electric conductivity covered with ZnO nanoflowers with n-type electric conductivity and porous silicon with p-type electric conductivity has been obtained. The photodegradation of dye in the presence of the composite photocatalysts based on the thin films and nanoflowers was investigated. The photocatalytic properties of ZnO materials were tested using the photocatalytic degradation of an aqueous solution of methyl orange dye serving as a model water contaminant. It has been found that the usage of nanoflowers leads to an improvement in the photocatalytic properties of the composites. An increase of about 30% in the efficiency of dye photodegradation, when a composite photocatalyst based on ZnO nanoflowers and porous silicon was used instead of a composite photocatalyst based on ZnO film and porous silicon, was found to be due to a larger effective surface area of ZnO nanoflowers. The morphology of the samples was examined using a scanning electron microscope-analyzer. [ABSTRACT FROM AUTHOR]

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