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In this study, bioengineered and biosynthesized elastin-like polypeptide (ELP) was adopted for a non-volatile memory resistive switching device or a memristor. The ELP mimicked from elastin of mammal was synthetically produced in polypeptide by Escherichia coli gene recombination. They were composed of a repeating pentapeptide sequence having [Val-Pro-Gly-Val-Gly]32 sequence for bioelectronic devices with ELP showing multiple electrical resistance states between a high resistance state and a low resistance state through an applied electrical field. In addition, the ELP-coated 5-nm gold nanoparticles (Au NPs) layer was also to be biomaterials used for nanobiohybrid memristive devices. Simple metal–insulator–metal device structure and lateral electrode device with ELP layer on 5-nm Au NPs could show neuromorphic adaptive current–voltage (I–V) behavior and electrical stimulus-induced potentiation and depression in a hydrogel state. In addition, with an introduction of a neurotransmitter cortisol's specific antibody, a preliminary sensing protocol was also examined with the nanobiohybrid device. Therefore, the introduction of ELP into neuromorphic device is regarded as the cornerstone for the development of biocompatible bioelectronic devices that can be integrated into human bionics for future artificial neuromorphic format. [ABSTRACT FROM AUTHOR]

This study addresses the demand for more efficient logic circuits by focusing on reducing area, power consumption, and delay. As conventional CMOS technology faces scaling and efficiency limitations, integrating emerging memory technologies like Resistive Random Access Memory (RRAM), also known as memristor, offers a promising solution. By replacing conventional PMOS transistors with memristors in CMOS logic, the study leverages the high-off resistance and low-voltage operation of RRAM devices to develop more compact and energy-efficient circuits. The proposed RRAM device is a Metal-Insulator-Metal structure fabricated with Platinum electrodes, Aluminum Oxide and Tantalum Pentoxide insulator layers. It operates with set and reset voltages of 1 V, and its current-voltage characteristics were theoretically modeled using the VTEAM model. A Memristor-based Imply and N-Imply(MINI) logic approach is introduced for XNOR, XOR and 2X1 Multiplexer designs and compared with three other hybrid NMOS-Memristor logics. Implementing 36 different 1-bit adder circuits in the Cadence Virtuoso 45 nm technology, the study evaluates area efficiency, power consumption, and delay. Results show that the memristor-based MINI logic designs are more area and powerefficient than traditional CMOS-based full adders and various optimized CMOS and memristor-based logics. This research underscores the potential of the proposed RRAM device integration in advanced hybrid logic design. [ABSTRACT FROM AUTHOR]

The magnetic response of most natural materials, characterized by magnetic permeability, is generally weak. Particularly, in the optical range, the weakness of magnetic effects is directly related to the asymmetry between electric and magnetic charges. Harnessing artificial magnetism started with a pursuit of metamaterial design exhibiting magnetic properties. The first demonstration of artificial magnetism was given by a plasmonic nanostructure called split-ring resonators. Engineered circulating currents form magnetic plasmons, acting as the source of artificial magnetism in response to external electromagnetic excitation. In the past two decades, magnetic plasmons supported by plasmonic nanostructures have become an active topic of study. This Perspective reviews the latest studies on magnetic plasmons in plasmonic nanostructures. A comprehensive summary of various plasmonic nanostructures supporting magnetic plasmons, including split-ring resonators, metal–insulator–metal structures, metallic deep groove arrays, and plasmonic nanoclusters, is presented. Fundamental studies and applications based on magnetic plasmons are discussed. The formidable challenges and the prospects of the future study directions on developing magnetic plasmonic nanostructures are proposed. [ABSTRACT FROM AUTHOR]

The effect of self-excitation of radio waves in the metal–insulator–metal structure doped with metal nanowires is predicted and its theory is developed. Both the transient stage of self-excitation and the steady-state regime of self-oscillation are analyzed in a fully analytical form. The numerical estimates demonstrate that this effect can be used for diverse practical purposes, in particular, for radio frequency wireless power harvesting. These findings extend the approach developed in nano-optics to the field of electrical engineering. [ABSTRACT FROM AUTHOR]

Probing the time evolution of the terahertz electric field within subwavelength dimensions plays a crucial role in observing the nanoscale lightwave interactions with fundamental excitations in condensed-matter systems and in artificial structures, such as metamaterials. Here, we propose a novel probing method for measuring terahertz electric potentials across nanogaps using a combination of optical and terahertz pulse excitations. To achieve this, we employ ring-shaped nanogaps that enclose a metallic island, allowing us to capture tunneling charges when subjected to terahertz electromagnetic pulse illumination. By controlling and manipulating the terahertz tunneling charges through a focused optical gate pulse, we can obtain the terahertz potential strength as a function of spatial coordinates and time delays between pulses. To accurately quantify the time evolution of terahertz electric potential across quantum barriers, we carefully calibrate the recorded nonlinear tunneling current. Its on-resonance and off-resonance behaviors are also discussed, providing valuable insights into the antenna's characteristics and performance. [ABSTRACT FROM AUTHOR]

The resistive switching property in HfO2 have attracted increasing interest in recent years. In this work, amorphous HfO2 nanocrystals are synthesized by a facile hydrothermal method. Then, the as-synthesized nanocrystals are rapid thermal annealed in different atmospheres for improving the crystal quality, and monoclinic phase is determined as the main crystal structure of the annealed HfO2. Subsequently, metal–insulator–metal structure devices based on HfO2 samples are fabricated. Electrical measurement indicates that 700 °C annealing processes in Air and Ar environments can slightly improve the bipolar resistive switching and retention behaviors. Higher annealed temperature (900 °C) will further improve the crystal quality of HfO2, while the resistive switching and retention behaviors of the devices continuously attenuate, which can be ascribed to the reduction of the conductive filaments induced by defects. [ABSTRACT FROM AUTHOR]

Optical biosensors based on plasmonic nanostructures have attracted great interest due to their ability to detect small refractive index changes with high sensitivity. In this work, a novel plasmonic coupled cavity waveguide is proposed for refractive index sensing applications. The structure consists of a metal–insulator–metal waveguide side coupled to an array of asymmetric H-shape element, designed to provide dual-band resonances. The sharp transmission dips and large field enhancements associated with dual-band resonances can enable sensitive detection of material under test. The resonator array creates a slow light effect to improve light-matter interactions. The structure was simulated using the finite integration technique as the full-wave technique, and the sensitivity and figure of merit were extracted for different ambient refractive indices. The maximum sensitivity of 1774 nm/RIU and high figure of merit of 2 × 104 RIU−1 for the basic model and 1.15 × 105 RIU−1 for the modified model were achieved, demonstrating the potential for high-performance sensing. The unique transmission characteristics also allow for combined spectral shaping and detection over a broad bandwidth. The simple, compact geometry makes the design suitable for on-chip integration. This work demonstrates a promising refractive index sensor based on coupled dual-band resonators in a plasmonic waveguide. [ABSTRACT FROM AUTHOR]

We have calculated the time constants of the electron dynamics in traps in a metal–insulator–metal (MIM) plasmonic structure. Because of electron relaxation in metal, the surface plasmon polaritons decays into hot electrons near the surface of the metal, which facilitates the trap of electrons in the interfacial layer of the dielectric. We have calculated the capture and emission times separately as the electron does not follow the same mechanisms with the capture process when it is emitted from a trap at the metal/oxide interface. We have developed a quasi-two-dimensional treatment that has been modified from a previously used semiconductor/oxide junction by using Bardeen's function to calculate the capture time. Various parameters including trap's distance from the interface, temperature, voltage bias, and spectral nature of the hot electrons' energy distribution influence the interaction between a plasmonic hot electron and a neutral near-interface trap in the capture process. On the one hand, the emission time is independent of the capture time, and it is determined by the tunneling time to the metal depending on the temperature and the energy difference between the trap energy levels (ground and excited states). We have showed that a wide range of capture times from seconds to picoseconds is possible for an interfacial trap at the room temperature due to the spectral energy distribution of hot electrons and dependence of the capture process on the losses in metals. On the other hand, the temperature plays the dominant role in the emission time. For the trap with 250 meV energy difference between its levels, the emission time is in the range of picosecond at room temperature. Therefore, the MIM plasmonic device can respond to a wide range of ac voltage frequencies including the ultra-fast domain. These interesting findings are useful to understand the ac response of the MIM plasmonic devices with applications in integrated photonics and ultra-fast optoelectronics. [ABSTRACT FROM AUTHOR]

The supplements with numerical values of lattice sums and the coefficients of their polynomial approximation are corrected too. Erratum: "Microellipsometry study of plasmonic properties of metal-insulator-metal structures with ordered lattices of nanoparticles" [J. Appl. Phys. Polarizability of a single particle, Eq. (7)-dashed lines, and polarizability renormalized by the interparticle dipolar interactions, Eq. (21)-solid lines (a), (b), (e), and (f) for 45° angle of incidence. [Extracted from the article]

All inkjet‐printed thermal sensors are manufactured based on a metal–insulator–metal (MIM) interface or capacitor architecture, for the adapted device size ranging from 16 to 36 mm2 active area. Two different material inks, namely a nanoparticle conductive silver ink and an inorganic‐polymer‐based hybrid insulator ink, are applied layer by layer on a thin flexible polyimide substrate, for developing the printed MIM devices. To ensure the desired electronic conductivity and insulation from the layers, the manufacturing process steps and parameters are tuned, accordingly. The results show that the inkjet‐printed MIM devices could constitute up to 15 μm thickness and demonstrate average detection of a change in electrical capacitance ranging from 20 to 100 pF, when the temperature is varied between 100 and 300 °C. The investigations also summarize that the change in the electrical response is enough to detect an increment of 50 °C. The printed sensors also display high operational stability and repeatability, when subjected to thermal cycling. [ABSTRACT FROM AUTHOR]

In this paper, a high sensitivity metal–insulator–metal waveguide structure capable of realizing triple independent tuning is designed and studied. The magnetic field distribution characteristics of the structure are investigated by finite element method. Combined with the transmission spectra, the propagation characteristics of the structure are studied. By changing the structure parameters and refractive index in the resonators, the sensing characteristics of the structure are analyzed. The sensitivity of the three peaks of the structure can reach high values, 3165 nm/RIU, 2590 nm/RIU and 3885 nm/RIU, respectively. More importantly, these three peaks are independent of each other, and do not affect each other, which can achieve triple independent tuning. This structure can measure the three physical quantities at the same time, which greatly improves the sensing efficiency and provides an important idea for the design of high-efficiency nanosensors. In addition, the feasibility of practical sensing applications of the structure is demonstrated by measuring the concentrations of ammonium chloride, glycerol and plasma solutions. [ABSTRACT FROM AUTHOR]

Probing the time evolution of the terahertz electric field within subwavelength dimensions plays a crucial role in observing the nanoscale lightwave interactions with fundamental excitations in condensed-matter systems and in artificial structures, such as metamaterials. Here, we propose a novel probing method for measuring terahertz electric potentials across nanogaps using a combination of optical and terahertz pulse excitations. To achieve this, we employ ring-shaped nanogaps that enclose a metallic island, allowing us to capture tunneling charges when subjected to terahertz electromagnetic pulse illumination. By controlling and manipulating the terahertz tunneling charges through a focused optical gate pulse, we can obtain the terahertz potential strength as a function of spatial coordinates and time delays between pulses. To accurately quantify the time evolution of terahertz electric potential across quantum barriers, we carefully calibrate the recorded nonlinear tunneling current. Its on-resonance and off-resonance behaviors are also discussed, providing valuable insights into the antenna’s characteristics and performance.

The existence of surface plasmon polaritons in doped silicon micro-scale structures has opened up new and innovative possibilities for applications, such as sensing, imaging, and photonics. A CMOS-compatible doped Si plasmonic sensor is proposed and investigated. The plasmon resonance can be tuned by controlling the carrier density and dopant concentration. In this paper, we demonstrate that using silicon doped with phosphorus at a concentration of 5 × 10 20 cm − 3 can induce surface plasmon resonance in the mid-infrared region. Two ring resonators of two different radii based on metal–insulator–metal waveguide structures are studied individually. Then, the two ring resonators are integrated in the same device. When the two ring resonators are coupled and resonate at the same frequency; two distinct resonance spectral lines are generated with striking features that improve its potential use for sensing and modulation applications. The propagating plasmonic mode is studied, including its mode profile and bend loss. We evaluate the effectiveness of a microstructure gas sensor with dimensions of 15 μ m × 15 μ m by measuring its sensitivity and selectivity towards methane and ethane gases. Small alterations in the surrounding refractive index led to noticeable shifts in the resonance peak. The sensor achieved a sensitivity of 7539.9 nm/RIU at the mid-infrared spectral range around the 7.7 μ m wavelength. Furthermore, by combining the resonators, we can achieve a smaller full width at half maximum (FWHM), which will ultimately result in greater sensitivity than using a single-ring resonator or other plasmonic resonator configurations. Once the sensitivity and selectivity of the sensor are measured, the FOM can be calculated by dividing the sensitivity by the selectivity of the sensor, resulting in an FOM of 6732. [ABSTRACT FROM AUTHOR]

In this article, a metamaterial multi-band perfect absorber with a Pi-inverted-Pi resonator is designed and investigated. It is observed that the meta-surface with a typical metal–insulator-metal structure showed nearly perfect absorption in almost five narrow bands with the lowest 93.6% and the highest 99.7% absorption level, according to the full-wave simulation results. The tunability of the Pi-inverted-Pi resonator has been examined based on the geometrical parameters. The origin of the five resonance bands has been analyzed based on the electric field and charge distributions occurring at the metal–dielectric interface. These resonance peaks are located at 1817.52 nm, 1968.38 nm, 2721.31 nm, 3765.6 nm, and 5740.63 nm wavelengths. The polarization dependence of the structure is investigated under TE and TM light, and our findings reveal that the Pi-inverted-Pi structure is partially polarization-dependent, which is a beneficial property for optical filtering. Compared to similar multi-band absorbers in the literature to the best of our knowledge, our proposed system offers a narrow band with high Q-factors of 118.7, 53, 32, 33, and 32 at each resonance wavelength. Therefore, our proposed design can be used in optical filters, Raman spectroscopy, bio-sensing, and many other applications, especially for the mid-infrared region's spectroscopic sensing and filtering applications. [ABSTRACT FROM AUTHOR]

A multi-purpose waveguide structure utilizing surface plasma polariton (SPPs) has been developed. This structure consists of a metal–insulator-metal (MIM) straight waveguide with a silver baffle, an analogous M-shaped cavity, and a semi-ellipse cavity. Utilizing the finite element method, the structure's optical transmission properties and magnetic field distributions are examined. The results show that Fano peaks maybe originate from different resonance cavities. Fano resonances can be adjusted individually by modifying the geometrical properties of the corresponding cavity. The refractive index sensing technique is investigated, and it is discovered that the refractive index sensitivity may reach up to 1980 nm/RIU. This proposed structure can detect cholesterol and ethylene glycol concentrations simultaneously by separating the analogous M-shaped cavity and the semi-ellipse cavity, with sensitivities reaching 30.2 nm mL/mg and 137.5 nm/%, respectively. Thus, it has the potential to be employed as a multifunctional nanoscale sensor. [ABSTRACT FROM AUTHOR]

The design of resonant planar metal-insulator-metal (MIM) structures offers promising applications in the optical image processing field, especially for developing efficient and ultrafast systems for optical computing and edge detection. The present work extends approaches based on electromagnetic theory and coupled-mode theory to describe nature and characteristics of the resonances in absorptive interference structures. Obtained analytical expressions based on Fano representation relate the resonance properties of the interference structures with their geometrical and optical parameters. This approach was efficiently employed to describe optical properties of the MIM structures and optimize their geometrical parameters for applications in optical filtration and image processing. The review of recent developments for all-optical edge detection both in reflection and transmission highlights various challenges encountered. [ABSTRACT FROM AUTHOR]

The enhancement of light absorption in an ultrathin two-dimensional material is critical for its optoelectronic and photonic applications. In this work, we investigated the enhanced light absorption of layered PtSe2 by engineering the optical impedance and the attenuation of the PtSe2-based metal–insulator–metal (MIM) absorber. For a monolayer PtSe2-based MIM absorber, the undesirable impedance mismatch can be compensated for using the top patterned metal array in the MIM structure to achieve near-perfect absorption (99.95%), and the absorption of monolayer PtSe2 is enhanced by 8.6 times in the visible spectra. For a few-layer PtSe2 MIM absorber, the self-impedance of the PtSe2 layer becomes an important factor in modulating the optical absorption and the PtSe2-based absorbers show excellent features with broadband absorption, insensitive to the incident angle and polarization. Our results improve the viability of the PtSe2-based optoelectronic and photonic devices and shed light on the design of absorbers with hybrid 2D materials. [ABSTRACT FROM AUTHOR]

The performance stability of the resistive switching (RS) is vital for a resistive random-access memory device. Here, by inserting a thin HfAlO x layer between the InGaZnO (IGZO) layer and the bottom Pt electrode, the RS performance in amorphous IGZO memory device is significantly improved. Comparing with a typical metal-insulator-metal structure, the device with HfAlO x layer exhibits lower switching voltages, faster switching speeds, lower switching energy and lower power consumption. As well, the uniformity of switching voltage and resistance state is also improved. Furthermore, the device with HfAlO x layer exhibits long retention time (>104 s at 85 °C), high on/off ratio and more than 103 cycles of endurance at atmospheric environment. Those substantial improvements in IGZO memory device are attributed to the interface effects with a HfAlO x insertion layer. With such layer, the formation and rupture locations of Ag conductive filaments are better regulated and confined, thus an improved performance stability. [ABSTRACT FROM AUTHOR]

Microellipsometric investigations of metal–insulator–metal (MIM) structures with regular square lattices of nanocylinders as one metallic layer are presented together with a theoretical description of all dipolar interactions in such a system. A comparison between the theoretical and experimental results is made, which clearly demonstrates the influence of surface plasmon on the optical properties of such MIM systems. The hybridization of localized and surface plasmon modes is revealed. [ABSTRACT FROM AUTHOR]

A Boersch phase plate can shift the phase of electrons proportionally to the applied electrical potential, thereby allowing for in situ control of the electron phase shift. A device comprising multiple Boersch phase shifter elements will be able to modulate the wavefront of a coherent electron beam and control electron interference. Recently, fabrication of single and 2 × 2 element Boersch phase shifter devices by focused ion beam milling has been reported. Realization of a large-scale Boersch phase shifter array would demand further developments in the device design and the fabrication strategy, e.g., using lithographic processes. In the present work, we develop a fabrication method utilizing the state-of-the-art electron beam lithography and reactive ion etching processes, a combination that is widely used for high-throughput and large-scale micro- and nanofabrication of electronic and photonic devices. Using the developed method, we fabricated a three-element phase shifter device with a metal–insulator–metal structure with 100-nm-thick ring electrodes and tested its electron transmission characteristics in a transmission electron microscope with a beam energy of 200 keV. We observed voltage-controlled evolution of electron interference, demonstrating the voltage-controlled electron phase shift using the fabricated device with a phase shift of π rad per 1 V. We analyze the experimental results in comparison with a three-dimensional electrostatic simulation. Furthermore, we discuss the possible improvements in terms of beam deflection and crosstalk between phase shifter elements in a five-layer device structure. [ABSTRACT FROM AUTHOR]

Since HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS) compatibility, non‐destructive operation, and low power consumption. Moreover, doped HfOx‐based FTJs are in the spotlight in terms of neuromorphic engineering as a way of advancing from the von Neumann structure. In particular, Al dopant is effective for inducing ferroelectric properties due to its smaller radius than that of Hf. The optimal concentration of Al varies depending on the device materials and the annealing conditions during deposition. Therefore, in‐depth research is required for neuromorphic applications. Herein, the properties of FTJ devices according to Al doping concentrations are analyzed. Subsequently, using the device with the highest remanent polarization, neuromorphic applications are implemented, including spike‐timing‐dependent plasticity (STDP), paired‐pulse facilitation (PPF), long‐term potentiation, and depression. The characteristics in different frequency regions are also studied to satisfy the demand for fast switching. Finally, the FTJ device is used as a physical reservoir in reservoir computing for efficient processing of time‐dependent inputs. [ABSTRACT FROM AUTHOR]

Metasurface-based research with phase-change materials has been a prominent and rapidly developing research field that has drawn considerable attention in recent years. In this paper, we proposed a kind of tunable metasurface based on the simplest metal–insulator–metal structure, which can be realized by the mutual transformation of insulating and metallic states of vanadium dioxide (VO2) and can realize the functional switching of photonic spin Hall effect (PSHE), absorption and beam deflection at the same terahertz frequency. When VO2 is insulating, combined with the geometric phase, the metasurface can realize PSHE. A normal incident linear polarized wave will be split into two spin-polarized reflection beams traveling in two off-normal directions. When VO2 is in the metal state, the designed metasurface can be used as a wave absorber and a deflector, which will completely absorb LCP waves, while the reflected amplitude of RCP waves is 0.828 and deflects. Our design only consists of one layer of artificial structure with two materials and is easy to realize in the experiment compared with the metasurface of a multi-layer structure, which can provide new ideas for the research of tunable multifunctional metasurface. [ABSTRACT FROM AUTHOR]

In this work, we analyze a resistive switching random access memory (RRAM) device with the metal–insulator–metal structure of Al/αTiOx/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction, which does not change during the endurance test. As the number of resistive switching (RS) cycles increases, the current in the low-resistance state (LRS) does not change significantly. In contrast, degradation in the high-resistance state (HRS) is noticeably evident. According to the RS cycle, the current shift fits well with the stretched-exponential equation. The normalized noise power spectral density (Si/I2) measured in the HRS is an order of magnitude higher than that in the LRS owing to the difference in the degree of trap occupancy, which is responsible for the transition of resistance states. During the consecutive RS, the Si/I2 in the HRS rapidly decreases for approximately 100 cycles and then saturates. In contrast, in the LRS, the Si/I2 does not change significantly. Here we propose a model associated with the endurance degradation of the experimental device, and the model is verified with a 1 / f noise measurement. [ABSTRACT FROM AUTHOR]

This work demonstrates the low temperature thin-film deposition of silicon nitride ( SiN x) for III-nitride-based high electron mobility transistors using inductively coupled plasma chemical vapor deposition. It is observed that the nonlinear dependency of the deposition temperature and gas flow rates have a profound impact on the film quality. The process parameter space is scanned and the optimum film quality is achieved, which is verified with physical and electrical characterizations. The best quality film is achieved at a deposition temperature of 380 ° C demonstrating near ideal stoichiometry with negligible hydrogen (< 5%) and oxygen (< 3%) concentrations. In addition, the optimized film is found to have zero pinholes even at a thickness of 10 nm and is uniform over a large area with an rms roughness of 0.58 nm. The deposited films are characterized by atomic force microscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The dielectric strength and dielectric constant of these films are determined from current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-insulator-metal structure, respectively. For the best quality film, the values of dielectric strength and dielectric constant are measured to be ∼ 8 MV/cm and ∼ 7.5 , respectively. A metal-insulator-semiconductor-heterostructure (metal/SiN x /AlGaN/GaN) capacitor is fabricated with the optimized recipe for interface characterization. The density of slow traps is determined from the hysteresis in the C-V curve and found to be 7.38 × 10 10 cm − 2 . The frequency dependent conductance method is also used to investigate the trap density. The trap state density is found to be 1.67 × 10 12 cm − 2 eV − 1 at 0.29 eV below conduction band. [ABSTRACT FROM AUTHOR]

We report unipolar resistive switching in polycrystalline, hexagonal yttrium manganite thin films grown on unpatterned Pt metal coated SiO2/Si substrates with circular Al top electrodes. Electroforming-free or electroforming-based resistive switching is observed, depending on the chemical composition (Y1Mn1O3, Y0.95Mn1.05O3, Y1Mn0.99Ti0.01O3, and Y0.94Mn1.05Ti0.01O3). The number of loading cycles measured at room temperature for samples with Y1Mn1O3 and Y0.95Mn1.05O3 composition is larger than 103. The dominant conduction mechanism of the metal–insulator–metal structures between 295 K and 373 K in the high resistance state is space charge limited conduction and in the low resistance state is ohmic conduction. Activation energies in Ohm's law region in the high resistance state are calculated from the Arrhenius equation and are evaluated to be 0.39 ± 0.01 eV (Y1Mn1O3), 0.43 ± 0.01 eV (Y0.95Mn1.05O3), 0.34 ± 0.01 eV (Y1Mn0.99Ti0.01O3), and 0.38 ± 0.02 eV (Y0.94Mn1.05Ti0.01O3). [ABSTRACT FROM AUTHOR]

This article demonstrates the capability of imaging micro-ellipsometry in the investigation of ordered plasmonic nanostructures on different substrates. The difference of the resonances of similar square lattices of plasmonic nanoparticles on a dielectric substrate and in a metal-insulator-metal configuration is analyzed. The influence of the surface plasmon on interparticle interactions becomes clearly apparent. Comparison of the obtained data with dark-field scattering spectra proves the consistency of the measured results as well as the complementary information received from both methods.

In this paper, we present the results of our systematic investigations of the resistive switching characteristics of HfO2-based metal–insulator–metal structures using four different metal bottom electrode (BE) materials, namely Au, Al, Pt and Cu. Ag is used as the top electrode for all these resistive random access memory devices. On one hand, Au and Pt show lower set and reset voltages, whereas the Pt electrode has a higher resistance ratio (Roff/Ron) ~ 105). On the other hand, Al and Cu exhibit multilevel switching during the reset process. Thus, the oxygen affinity of the BE is expected to result in the formation of an interfacial layer with the active (HfO2) layer. Furthermore, conduction mechanisms have been studied for the various regions in the high resistance state (HRS) curves of all these devices. It is found that the Poole–Frenkel effect is more dominant at higher voltages (> 1 V) in the HRS curve. Therefore, it is essential to elucidate the appropriate BE material and optimum active switching layer to understand the conduction mechanisms for the resistive switching phenomenon. [ABSTRACT FROM AUTHOR]

In this study, all-optical OR, exclusive OR (XOR), NOR, XNOR, AND, NAND, and NOT logic gates using metal-insulator-metal (MIM) waveguides with a rectangular ring resonator are designed and analyzed. The structure has a silver plate with three input waveguides, one output waveguide, and a rectangular ring resonator. One of the input ports is used as a control port. The finite-difference time-domain (FDTD) method is utilized to obtain the optical spectrum of the proposed structures. To realize all-optical logic gate properties of the designed structures, optical signals with the same phase or different phases are passed through the waveguides. Transmission spectrum (T), contrast ratio (CR), and modulation depth (MD) parameters are obtained to determine the performances of all-optical logic gates. To determine the logic 1 (ON) and logic 0 (OFF) states of the output ports, the threshold transmission value is accepted as 0.23 for all-optical logic gates. For the proposed designs, the highest transmission, contrast ratio, and modulation depth values are 217%, 6.75 dB, and 100%, respectively. The structure also supports a data rate of 24 Tb/s. The designed optical logic gates have valuable features for developing high-performance optical devices. [Display omitted] • Design and analysis of all-optical OR, XOR, NOR, XNOR, AND, NAND, and NOT logic gates in the near-infrared regime. • The proposed structure has metal-insulator-metal waveguides and a rectangular ring resonator. • Maximum transmission is 217% at 836.8 nm. • The structure can support a data rate of 24 Tb/s. [ABSTRACT FROM AUTHOR]

In this paper, we have designed a solar absorber with ultra-broadband absorption. The structure has seven layers with a metal-dielectric periodic film stack and a metallic copper substefficiency. The metal-dielectric periodic membrane stack and the dielectric are continuous to form a metal/dielectric composite microstructure. It has a very high absorption efficiency at 280 nm–2893 nm. The absorption efficiency in this wavelength range is 96.26% and absorption efficiency at AM 1.5 is up to 95.66% by finite difference time domain method (FDTD) simulation. The thermal radiation absorption efficiency of the structure is 93.69% at 1000K and 94.5% at 1200 K, which can also be used in the manufacture of the heat sink due to its high thermal radiation absorption efficiency. Our proposed solar absorber has good incidence angle insensitivity (0°–60°) and good polarization independence (0°–90°). These advantages enable our absorbers to be widely used for solar absorption and emission and offer a variety of design options for ideal absorbers. • The absorber enables ultra-broadband high-efficiency absorption. • The absorber has ultra-high thermal emission efficiency. • The absorber is insensitive to changes in the angle of incidence and the angle of polarization. [ABSTRACT FROM AUTHOR]

This study investigates the viability of TiO 2 as a high- k material in metal-insulator-metal (MIM) capacitors, essential components influencing semiconductor memory device performance. Traditional materials like ZrO 2 and HfO 2 face intrinsic limitations, prompting exploration into TiO 2 's potential, particularly in its rutile crystalline structure with a remarkable dielectric constant of 170. Leveraging atomic layer deposition (ALD), TiO 2 emerges as a promising candidate for MIM capacitors. The study focuses on the practical application of a MoO 2 electrode in TiO 2 dielectric film MIM capacitors, demonstrating its potential to induce rutile crystallization in both MoO 2 and TiO 2 while suppressing morphology degradation. Insights into the mechanism of TiO 2 rutile crystallization contribute to the development of an optimized MoO 2 /TiO 2 -based MIM capacitor, offering a significant advancement in addressing challenges and improving the performance of next-generation semiconductor memory devices. [Display omitted] • Developing the in-situ rutile crystallization process of MoO x and TiO 2 • Inducing simultaneous crystallization of MoO 2 and TiO 2 within a desirable thickness range • Effectively suppressing morphology degradation of MoO x • The practical application of a MoO 2 electrode in TiO 2 dielectric film MIM capacitors • Achieving a highly scalable metal-insulator-metal structure of t ox of 0.328 nm [ABSTRACT FROM AUTHOR]

In this study, a plasmonic structure based on metal-insulator-metal waveguides and square ring resonators is designed and simulated for temperature sensing. The sensing operation is carried out using an enhancement in the interference of sub-wavelength waves. The effect of various factors, such as the number and geometric dimensions of the resonators, on the sensor's reflection spectrum is thoroughly investigated. The results obtained from the finite-difference time-domain simulations indicate that the sensitivity, figure of merit, and temperature sensitivity values for a square ring resonator are 1281 nm/RIU, 73 RIU−1, and 0.505 nm/°C, respectively. Additionally, by using three square ring resonators, the figure of merit increases to 154 RIU−1. The size of the sensors is smaller than 1 µm2. Due to their highly compact size and desirable sensing characteristics, the proposed sensors have great potential for application in various industrial and medical applications. [ABSTRACT FROM AUTHOR]

Emerging haptic technology based on piezoelectric actuators enables to realize innovative tactile human–machine interface. The standard solution is based on stand-alone bulk ceramics glued directly on the haptic device. Thin-film actuators with metal–insulator–metal structure have been developed to directly integrate actuators on haptic plates. The thickness of thin films is limited to 2 μm, leading to large capacitance and, thus, too high-power consumption. To solve this issue, we developed haptic devices based on a 10 μm-thick PZT film deposited on a 0.65 mm-thick platinized silicon substrate. These thick films are made of a PZT composite slurry associated with sol-gel sol infiltration. They are dense and exhibit a permittivity of 1000 and dielectric loss lower than 0.05. Our fabricated haptic device containing three actuators connected in series exhibits an antisymmetric Lamb wave resonant mode at 62.0 kHz, in line with finite element modeling. At the limit of touch detection (1 μm out of plane deflection), the power consumption of the haptic device is 150 mW at 40 V. This represents a 15-fold consumption reduction with respect to the same haptic device made with 0.5 μm-thick PZT thin films. [ABSTRACT FROM AUTHOR]

The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf–Nb thin-film combinatorial system deposited by sputtering on Si substrates. The active layer was grown anodically on each Hf–Nb alloy from the library, whereas Pt electrodes were deposited as the top electrodes. The devices grown on Hf-45 at.% Nb alloys showed improved memristive performances reaching resistive state ratios up to a few orders of magnitude and achieving multi-level switching behavior while consuming low power in comparison with memristors grown on pure metals. The coexistence of threshold and resistive switching is dependent upon the current compliance regime applied during memristive studies. Such behaviors were explained by the structure of the mixed oxides investigated by TEM and XPS. The mixed oxides, with HfO2 crystallites embedded in quasi amorphous and stoichiometrically non-uniform Nb oxide regions, were found to be favorable for the formation of conductive filaments as a necessary step toward memristive behavior. Finally, metal–insulator–metal structures grown on the respective alloys can be considered as relevant candidates for the future fabrication of anodic high-density in-memory computing systems for neuromorphic applications. [ABSTRACT FROM AUTHOR]

In this study authors worked to attain a metamaterial absorber for visible and infrared region using bismuth as its main constituent material. Proposed absorber would be used for various applications; solar cell, communication etc. To model the metamaterial surface, two different sets of materials are used to observe and compare the absorption, having metal-insulator-metal structure to observe the metamaterial. It is observed that proposed metamaterial layer having Al/TiO 2 /Bi, displays high absorption for two bands in different wavelength region with wide bandwidth. Absorption peaks are observed at 510 nm and 1590 nm. However, apart from the peaks, absorption is not less than 0.5 a.u. anywhere in the absorption spectrum, which depicts that this absorber can be used for whole wavelength range varies from 200 to 2500 nm. Designed absorber in this study also ensures the easy fabrication of the metamaterial surface due to its less complex design and small geometry, which ensures the stability of three dimensional structure. [ABSTRACT FROM AUTHOR]

Titanium nitride (TiN) is a material of interest for electrodes owing to its high-temperature stability, robustness, low-cost, and suitable electrical properties. Herein, we studied the surface morphology and electrical properties of TiN thin film deposited onto an Si/SiO2 <100> substrate through direct current (DC) sputtering with a high-purity TiN target in an argon-gas environment. The electrical properties and surface morphology of TiN thin film significantly improved with increased source power and decreased working pressure. The improved electrical properties could be attributed to the suppressed secondary phase (Ti2N) formation and the reduced electron scattering on smoother surface. Consequently, high-quality TiN thin film with the lowest resistivity (ρ = 0.1 mΩ·cm) and the smallest surface roughness (RMS roughness, Rq = 0.3 nm) was obtained under the optimized condition. The TiN film was further used as the bottom electrode for a metal–insulator–metal (MIM) capacitor. Results demonstrated that the electrical properties of TiN film were comparable to those of noble-metal thin films. Therefore, the TiN thin film fabricated by DC sputtering method had excellent electrical properties and good Rq, indicating its potential applications in MIM capacitors and Si technology. [ABSTRACT FROM AUTHOR]

The reversibly stable formation and rupture processes of electrical percolative pathways in organic and inorganic insulating materials are essential prerequisites for operating non-volatile resistive memory devices. However, such resistive switching has not yet been reported for dynamically cross-linked polymers capable of intrinsic stretchability and self-healing. This is attributable to the uncontrollable interplay between the conducting filler and the polymer. Herein, we present the development of the self-healing, stretchable, and reconfigurable resistive random-access memory. The device was fabricated via the self-assembly of a silver-gradient nanocomposite bilayer which is capable of easily forming the metal-insulator-metal structure. To realize stable resistive switching in dynamic molecular networks, our device features the following properties: i) self-reconstruction of nanoscale conducting fillers in dynamic hydrogen bonding for self-healing and reconfiguration and ii) stronger interaction among the conducting fillers than with polymers for the formation of robust percolation paths. Based on these unique features, we successfully demonstrated stable data storage of cardiac signals, damage-reliable memory triggering system using a triboelectric energy-harvesting device, and touch sensing via pressure-induced resistive switching. Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access memory made of a Ag-gradient nanocomposite. [ABSTRACT FROM AUTHOR]

A plasmonic structure of metal–insulator-metal (MIM) waveguide consisting of a baffle waveguide and an r-shaped resonator is designed to produce Fano resonances. The finite element method is used to analyze the transmission characteristics and magnetic field distributions of the plasmonic structure. The simulation results show that two Fano resonances can be achieved by the interference between a continuum state in the baffle waveguide and a discrete state in the r-shaped resonator. The Fano resonances can be tuned by changing the geometrical parameters of the plasmonic structure. The refractive index sensing is investigated and it is found that the sensitivity is strongly dependent on the geometrical parameters. The maximum sensitivity is 1333 nm/RIU, with the figure of merit of 5876. The results of the designed plasmonic structure offer high sensitivity and nano-scale integration, which are beneficial to nano-scale refractive index sensors, biosensors, and photonic devices. [ABSTRACT FROM AUTHOR]

In this paper, a compact and highly sensitive refractive index plasmonic sensor, based on a metal-insulator-metal (MIM) waveguide coupled to double hexagonal ring-shaped resonators in the mid-infrared range, is proposed and analyzed using the finite-difference time-domain (FDTD) method embedded in the commercial simulator R-soft, where it has been found that the transmission peaks and dips positions can be easily manipulated, by simply adjusting the structural parameters of the proposed design, such as the inner side length and the distance between the centers of the two hexagonal ring resonators. So, these parameters have a key role in the sensor's performances, and it is clearly noticed from the results, where a linear link between the refractive index of the material under testing and its wavelength resonances was established. Furthermore, the maximum achievable linear sensitivity was S = 4074 nm/RIU, with a matching sensing resolution of 2:45 x 10-6 RIU; the temperature sensitivity is around 1.55 nm/°C; and the highest linear sensitivity is S = 3910 nm/RIU in 0{200 g/L glucose concentration, making this proposed sensor an attractive one, to be implemented in high-performance nano and bio-sensing devices. [ABSTRACT FROM AUTHOR]

A metal-insulator-semiconductor (MIS) tunneling diode is a very promising sensor due to its deep depletion phenomenon. The coupling effect between two adjacent devices is therefore of importance. To study the MIS deep-depletion tunneling current coupling phenomenon, a device pattern of one centric circle coupled with one or two surrounding rings was devised. It was found that MIS(p) tunneling current with the Schottky barrier height modulation mechanism is enhanced just by locating more MIS(p) structures nearby or by shortening their relative distance, which can again be verified under light exposure. The MIS(n) structure was also fabricated for comparison. It was observed in MIS(n) that, with the lack of the Schottky barrier height modulation mechanism, tunneling current is greater and almost immune to light irradiance compared to MIS(p). Besides, the edge oxide of MIS(p) is removed to change its Schottky barrier height modulation capability. Significantly lower deep-depletion tunneling current and invulnerability to the adjacent minority condition were observed. Surprisingly, it offers smaller saturation voltage and better photosensitivity. [ABSTRACT FROM AUTHOR]

Electroforming of metal-insulator-metal diodes is a soft dielectric breakdown that changes the high resistance of as-prepared diodes to a low resistance state. Electroforming of Al-Al2O3-metal diodes with anodic Al2O3 results in voltage-controlled negative resistance in the current-voltage (I-V) characteristics, electroluminescence (EL), and electron emission into vacuum (EM). EL is due to electrons injected at the Al-Al2O3 interface combining with radiative defects in Al2O3. Surface plasmon polaritons (SPPs) are electromagnetic waves that can be excited by photons or electrons. SPPs are confined to a metal-dielectric interface, cause large electric fields in the metal and dielectric, and have ranges of micrometers. The temperature dependence of I-V curves, EL, and EM of a group of electroformed Al-Al2O3-Ag diodes with Al2O3 thicknesses between 12 nm and 20 nm, group A, was measured between 200K and 300 K. After a sequence of temperature measurements, the Al-Al2O3-Ag diodes, the Al-Al2O3 regions between diodes, and portions of the Ag on the glass region that provides contacts to the diodes are darkened. The range of darkening is >7mm in a diode with 12 nm of Al2O3 and 2.0-3.5mm in diodes with Al2O3 thicknesses between 14 nm and 20 nm. Darkening is attributed to the occurrence of SPPs generated by EL photons at the Ag-Al2O3 and Al-Al2O3 interfaces. The results are compared to a second group of Al-Al2O3-Ag diodes with identical Al2O3 thicknesses, group B, that were prepared in the same way as the diodes of group A except for a difference in the deposition of Al films for the two groups. Al-Al2O3-Ag diodes of group B exhibit enhanced EL, which is attributed to spontaneous emission of recombination centers in Al2O3 being enhanced by large electromagnetic fields that are due to SPPs that are generated by EL photons. [ABSTRACT FROM AUTHOR]

The effect of a local external electric field on the barrier potential of a tunneling gap is studied utilizing an emerging technique, synchrotron x-ray scanning tunneling microscopy. Here, we demonstrate that the shape of the potential barrier in the tunneling gap can be altered by a localized external electric field, generated by voltages placed on the metallic outer shield of a nanofabricated coaxial metal-insulator-metal tip, resulting in a controlled linear modulation of the tunneling current. Experiments at hard and soft x-ray synchrotron beamlines reveal that both the chemical contrast and magnetic contrast signals measured by the tip can be drastically enhanced, resulting in improved local detection of chemistry and magnetization at the surface. [ABSTRACT FROM AUTHOR]

Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin sub-nanometer active layer thickness. However, the reliability of these nascent 2D-based memory devices was not previously investigated for practical applications. Here, we employ an electron irradiation treatment on monolayer MoS2 film to modify the defect properties. Raman, photoluminescence, and X-ray photoelectron spectroscopy measurements have been performed to confirm the increasing amount of sulfur vacancies introduced by the e-beam irradiation process. The statistical electrical studies reveal the reliability can be improved by up to 1.5× for yield and 11× for average DC cycling endurance in the devices with a moderate radiation dose compared to unirradiated devices. Based on our previously proposed virtual conductive-point model with the metal ion substitution into sulfur vacancy, Monte Carlo simulations have been performed to illustrate the irradiation effect on device reliability, elucidating a clustering failure mechanism. This work provides an approach by electron irradiation to enhance the reliability of 2D memory devices and inspires further research in defect engineering to precisely control the switching properties for a wide range of applications from memory computing to radio-frequency switches. [ABSTRACT FROM AUTHOR]

Memristor devices fabricated using the chalcogenide Ge2Te3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge2Te3 into Ge-and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications. [ABSTRACT FROM AUTHOR]

Perovskite microcells have a great potential to be applied to diverse types of optoelectronic devices including light-emitting diodes, photodetectors, and solar cells. Although several perovskite fabrication methods have been researched, perovskite microcells without a significant efficiency drop during the patterning and fabrication process could not be developed yet. We herein report the fabrication of high-efficiency perovskite microcells using swelling-induced crack propagation and the application of the microcells to colored solar windows. The key procedure is a swelling-induced lift-off process that leads to patterned perovskite films with high-quality interfaces. Thus, a power conversion efficiency (PCE) of 20.1 % could be achieved with the perovskite microcell, which is nearly same as the PCE of our unpatterned perovskite photovoltaic device (PV). The semi-transparent PV based on microcells exhibited a light utilization efficiency of 4.67 and a color rendering index of 97.5 %. The metal–insulator–metal structure deposited on the semi-transparent PV enabled to fabricate solar windows with vivid colors and high color purity. Perovskite microcells can be applied to various types of optoelectronic devices. Here, authors report high efficiency perovskite microcells fabricated using swelling-induced crack propagation and demonstrate solar windows using the microcells. [ABSTRACT FROM AUTHOR]

The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a metal-insulator-metal vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state to low resistance state. Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV decâˆ'1, ON/OFF ratio up to 108, SET current down to pA and SET voltage down to 180 mV. [ABSTRACT FROM AUTHOR]

Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based on the resistive switching phenomenon, which in most cases are fabricated in the form of metal–insulator–metal structures. At the same time, the demand for compatibility with the standard fabrication process of complementary metal–oxide semiconductors makes it relevant from a practical point of view to fabricate memristive devices directly on a silicon or SOI (silicon on insulator) substrate. Here we have investigated the electrical characteristics and resistive switching of SiOx- and SiNx-based memristors fabricated on SOI substrates and subjected to additional laser treatment and thermal treatment. The investigated memristors do not require electroforming and demonstrate a synaptic type of resistive switching. It is found that the parameters of resistive switching of SiOx- and SiNx-based memristors on SOI substrates are remarkably improved. In particular, the laser treatment gives rise to a significant increase in the hysteresis loop in I–V curves of SiNx-based memristors. Moreover, for SiOx-based memristors, the thermal treatment used after the laser treatment produces a notable decrease in the resistive switching voltage. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) is widely studied for its prominent insulator–metal transition (IMT) near room temperature, with potential applications in novel memory devices and brain-inspired neuromorphic computing. We report on the fabrication of in-plane VO2 metal–insulator–metal structures and reproducible switching measurements in these two-terminal devices. Resistive switching can be achieved by applying voltage or current bias, which creates Joule heating in the device and triggers the IMT. We analyze the current/voltage-induced resistive switching characteristics, including a pronounced intermediate state in the reset from the low to the high resistance state. Controllable switching behavior is demonstrated between multiple resistance levels over several orders of magnitude, allowing for multibit operation. This multi-level operation of the VO2-bridge devices results from exploiting sub-hysteresis loops by Joule heating. [ABSTRACT FROM AUTHOR]

This paper reports a multichannel color filter with the functions of optical sensor and switch. The proposed structure comprises a metal–insulator–metal (MIM) bus waveguide side-couples to six circular cavities with different sizes for filtering ultra-violet and visible lights into individual colors in the wavelength range of 350–700 nm. We used the finite element method to analyze the electromagnetic field distributions and transmittance properties by varying the structural parameters in detail. The designed plasmonic filter takes advantage of filtering out different colors since the light-matter resonance and interference between the surface plasmon polaritons (SPPs) modes within the six cavities. Results show that the designed structure can preferentially select the desired colors and confine the SPPS modes in one of the cavities. This designed structure can filter eleven color channels with a small full width at half maximum (FWHM) ~ 2 nm. Furthermore, the maximum values of sensitivity, figure of merit, quality factor, dipping strength, and extinction ratio can achieve of 700 nm/RIU, 350 1/RIU, 349.0, 65.04%, and 174.50 dB, respectively, revealing the excellent functions of sensor performance and optical switch, and offering a chance for designing a beneficial nanophotonic device. [ABSTRACT FROM AUTHOR]

A plasmonic refractive index nanosensor structure consisting of a metal-insulator-metal (MIM) waveguide with two symmetrical rectangle baffles coupled with a connected-concentric-double rings resonator (CCDRR) is presented. In this study, its transmission characteristics were investigated using the finite element method (FEM). The consequences, studied via simulation, revealed that the transmission spectrum of the system presents a sharp asymmetric Fano profile due to the destructive interference between the wide-band mode of two rectangle baffles on the bus waveguide and the narrow-band mode of the CCDRR. The effects of the geometric parameters of the structure on the transmission characteristics were investigated comprehensively. A sensitivity of 2260 nm/RIU and figure of merit (FOM) of 56.5 were the best levels of performance that the designed structure could achieve. In addition, the system could act as a sensor for use for temperature sensing, with a sensitivity that could reach 1.48 nm/°C. The designed structure advances with technology with new detection positions and has good application prospects in other high-sensitivity nanosensor fields, for example, acting as a biosensor to detect the hemoglobin level in the blood. [ABSTRACT FROM AUTHOR]

A TCAD approach for the investigation of charge transport in thick amorphous silicon dioxide is presented for the first time. Thick oxides are investigated representing the best candidates for integrated galvanic insulators in future power applications. The large electric fields, such devices experience and the preexisting defects in the amorphous material, give rise to a leakage current, which leads to degradation and failure. Hence, it is crucial to have a complete understanding of the main physical mechanisms responsible for the charge transport in amorphous silicon oxide. For this reason, metal–insulator–metal structures have been experimentally characterized at different high-field stress conditions and a TCAD approach has been implemented in order to gain insight into the microscopic physical mechanisms responsible for the leakage current. In particular, the role of charge injection at contacts and charge build-up due to trapping–detrapping mechanisms in the bulk of the oxide layer has been investigated and modeled to the purpose of understanding the oxide behavior under dc- and ac-stress conditions. Numerical simulations have been compared against experiments to quantitatively validate the proposed approach. [ABSTRACT FROM AUTHOR]