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The incorporation of potassium into perovskite solar cells (PSCs) has been empirically validated to mitigate hysteresis phenomena and boost the power conversion efficiency (PCE). However, the doping mechanism of potassium ions in the perovskite film and their effect on photocarrier recombination remains a topic of debate. Here, we grew doped MAPbI3: K single crystals by inverse temperature crystallization using KI as a dopant, and then perovskite thin films were spin-coated with dissolved MAPbI3: K crystals as a precursor. The doped MAPbI3: K perovskite films exhibit better crystal quality with large columnar grains and lower defect density. Employing Hall effect, ultraviolet photoelectron spectroscopy, and Kelvin probe force microscopy measurements, we definitively demonstrate that K-doping transforms the conductivity type of the perovskite film from a marginally N-type to a distinct P-type semiconductor. Furthermore, this doping strategy induces a concurrent downward shift in both the conduction band minimum and valence band maximum. As a result, the PCE of the PSCs increases from 15.15% to an impressive 20.66%, and the J–V curve hysteresis almost disappears. Additionally, theoretical simulations using SCAPS-1D software reveal a profound modification in the device's energy band diagram after K+-doping. Specifically, the energy level offset between the perovskite layer and the electron transport layer diminishes from 0.24 to 0.14 eV, with a result of bigger quasi-Fermi energy level splitting. This, in turn, elevates the open-circuit voltage (Voc) of the doped perovskite solar cell, underscoring the profound impact of potassium doping on enhancing PSC performance. [ABSTRACT FROM AUTHOR]

β-Ga2O3 has received widespread attention due to its ultrawide bandgap, which potentially permits applications in extreme conditions. Ultrafast laser irradiation of β-Ga2O3 provides a means for exploring the response of the material under such conditions, which could result in the generation of point defects as well as a localized modification of structural features that could yield properties that differ from the pristine surface. However, an understanding of defects generated by femtosecond laser irradiation in the vicinity of laser-induced periodic surface structures (LIPSS) remains to be explored. We correlate topographic features with optical and electronic properties by combining near-nm scale resolution cathodoluminescence with Kelvin probe force microscopy. Defects are found to correlate with crystalline order and near-surface morphology, as well as changes in work function. They are also suggested to be closely related to the formation of high spatial frequency LIPSS. These results suggest a need for precise tuning of laser irradiation conditions as well as possible post-processing to control defects in future Ga2O3 devices. [ABSTRACT FROM AUTHOR]

The current focus in Autonomous Experimentation (AE) is on developing robust workflows to conduct the AE effectively. This entails the need for well-defined approaches to guide the AE process, including strategies for hyperparameter tuning and high-level human interventions within the workflow loop. This paper presents a comprehensive analysis of the influence of initial experimental conditions and in-loop interventions on the learning dynamics of Deep Kernel Learning (DKL) within the realm of AE in scanning probe microscopy. We explore the concept of the "seed effect," where the initial experiment setup has a substantial impact on the subsequent learning trajectory. Additionally, we introduce an approach of the seed point interventions in AE allowing the operator to influence the exploration process. Using a dataset from Piezoresponse Force Microscopy on PbTiO3 thin films, we illustrate the impact of the "seed effect" and in-loop seed interventions on the effectiveness of DKL in predicting material properties. The study highlights the importance of initial choices and adaptive interventions in optimizing learning rates and enhancing the efficiency of automated material characterization. This work offers valuable insights into designing more robust and effective AE workflows in microscopy with potential applications across various characterization techniques. [ABSTRACT FROM AUTHOR]

Alloying CdTe absorbers with Se is a critical advancement for the fabrication of highly efficient CdTe thin-film solar cells. Herein, the role of the Se concentration gradient in CdSexTe1−x/CdTe solar cells is stressed in addition to the decreased bandgap and passivation effect of Se. The buried graded CdSexTe1−x at the front interface of the device was stripped and analyzed by quasi in situ x-ray photoelectron spectroscopy depth profiling. A serial shift of Fermi level toward the valence band was probed as the Se concentration decreased in the graded CdSexTe1−x absorber, revealing the presence of n-type CdSexTe1−x region near the front contact. Kelvin probe force microscopy characterizations and voltage-dependent photocurrent collection analysis further confirmed the existence of a buried junction in the graded CdSexTe1−x absorber. The CdS-free CdTe solar cell with a graded CdSexTe1−x/CdTe absorber fabricated in this study showed an efficiency of 17.6%. These results indicated that the non-uniform distribution of Se introduced a built-in field in the graded CdSexTe1−x absorber and enabled efficient separation of photogenerated carriers, yielding high-performance CdTe solar cells in the absence of a conventional n-type CdS window layer. This study deepened the understanding of the performance enhancement in Se-containing CdTe solar cells and provided new ideas for further performance optimization. [ABSTRACT FROM AUTHOR]

This work investigates the physical properties of Al1−xScxN thin films sputtered at low temperatures by varying the process conditions. Specifically, the films were deposited at room temperature by applying a radio frequency power equal to 150 W to an AlSc alloy (60:40) target, varying the nitrogen flux percentage in the (Ar + N2) sputtering atmosphere (30%, 40%, 50%, and 60%) and keeping constant the working pressure at 5 × 10−3 mbar. The structural and chemical properties of the Al1−xScxN films were studied by x-ray diffraction and Rutherford backscattering spectrometry techniques, respectively. The piezoelectric response was investigated by piezoresponse force microscopy. In addition, the surface potential was evaluated for the first time for Sc-doped AlN thin films by Kelvin probe force microscopy, providing piezoelectric coefficients free from the no-piezoelectric additional effect to the mechanical deformation, i.e., the electrostatic force. By alloying AlN with scandium, the piezoelectric response was strongly enhanced (up to 200% compared to undoped AlN), despite the low deposition temperature and the absence of any other additional energy source supplied to the adatoms during thin film growth, which generally promotes a better structural arrangement of polycrystalline film. This is a strategic result in the field of microelectromechanical systems completely fabricated at low temperatures. [ABSTRACT FROM AUTHOR]

Copper‐based halide perovskite, as an ideal alternative to lead‐based halide perovskite, has attracted much attention in many applications owing to its earth‐abundant element, non‐toxicity, and excellent optical properties. In this report, magnetic Mn‐incorporated lead‐free copper halide perovskite (Cs3Cu2Br5) nanocrystal (NC) is for the first time designed and prepared using a one‐pot hot‐injection route, resulting in a new emission band at ≈540 nm accompanied with self‐trapped exciton (STE) emission centered at ≈445 nm from Cs3Cu2Br5 NC. In situ X‐ray photoelectron spectroscopy and in situ kelvin probe force microscopy (KPFM) confirm that the Mn2+ incorporation causes efficient electron–hole separation and extended charge lifetime in Mn‐doped Cs3Cu2Br5 NC, which exhibits significantly raised selectively photocatalytic biomass conversion coupled with obviously enhanced H2O2 evolution. With an external magnetic field, the spin‐polarized electrons in Mn‐doped Cs3Cu2Br5 NC arouses reduced charge recombination and more available electrons/holes for surface redox reaction, further raising the photocatalytic performance. This is confirmed by in situ steady‐state/transient‐state photoluminescence (PL) spectroscopy, in situ transient photocurrent measurement, and in situ electrochemical impedance spectroscopy with external magnetic field. In situ electron paramagnetic resonance (EPR) spectra reveal the radical‐involved reaction pathway for biomass conversion. This research exhibits the great potential of spin‐polarization‐enhanced photocatalysis by an external magnetic field without additional energy consumption. [ABSTRACT FROM AUTHOR]

Collagen fibrils are fundamental to the mechanical strength and function of biological tissues. However, they are susceptible to changes from non-enzymatic glycation, resulting in the formation of advanced glycation end-products (AGEs) that are not reversible. AGEs accumulate with aging and disease and can adversely impact tissue mechanics and cell-ECM interactions. AGE-crosslinks have been related, on the one hand, to dysregulation of collagen fibril stiffness and damage and, on the other hand, to altered collagen net surface charge as well as impaired cell recognition sites. While prior studies using Kelvin probe force microscopy (KPFM) have shown the effect glycation has on collagen fibril surface potential (i.e., net charge), the combined effect on individual and isolated collagen fibril mechanics, hydration, and surface potential has not been documented. Here, we explore how methylglyoxal (MGO) treatment affects the mechanics and surface potential of individual and isolated collagen fibrils by utilizing atomic force microscopy (AFM) nanoindentation and KPFM. Our results reveal that MGO treatment significantly increases nanostiffness, alters surface potential, and modifies hydration characteristics at the collagen fibril level. These findings underscore the critical impact of AGEs on collagen fibril physicochemical properties, offering insights into pathophysiological mechanical and biochemical alterations with implications for cell mechanotransduction during aging and in diabetes. Collagen fibrils are susceptible to glycation, the irreversible reaction of amino acids with sugars. Glycation affects the mechanical properties and surface chemistry of collagen fibrils with adverse alterations in biological tissue mechanics and cell-ECM interactions. Current research on glycation, at the level of individual collagen fibrils, is sparse and has focused either on collagen fibril mechanics, with contradicting evidence, or surface potential. Here, we utilized a multimodal approach combining Kelvin probe force (KPFM) and atomic force microscopy (AFM) to examine how methylglyoxal glycation induces structural, mechanical, and surface potential changes on the same individual and isolated collagen fibrils. This approach helps inform structure-function relationships at the level of individual collagen fibrils. [Display omitted] [ABSTRACT FROM AUTHOR]

The ternary blending strategy is a fundamental approach that is widely recognized in the field of organic optoelectronics. In our investigation, leveraging the inherent advantages of the ternary component blending methodology, we introduced an innovative design for organic photodetectors (OPDs) aimed at reducing the dark current density (Jd) under reverse bias. This pioneering effort involved combining two distinct conjugated molecules (IT-4F and IEICO-4F) with a conjugated polymer (PM7), resulting in a composite material characterized by a well-defined vertical phase separation. To thoroughly explore device performance variations, we utilized a comprehensive array of analytical techniques, including atomic force microscopy (AFM) cross-section methodologies and Kelvin probe force microscopy (KPFM). Through the optimization of the blend ratio (PM7:IT-4F: IEICO-4F at 1:0.8:0.2), we achieved significant advancements. The resulting OPD demonstrated an exceptional reduction in JD, reaching a remarkably low value of 4.95 × 10−10 A cm−2, coupled with an ultra-high detectivity of 4.95 × 1013 Jones and an outstanding linear dynamic range exceeding 100 dB at 780 nm under a bias of −1V. Furthermore, the attained cutoff frequency reached an impressive 220 kHz, highlighting substantial improvements in device performance metrics. Of particular significance is the successful translation of this technological breakthrough into real-world applications, such as in heart rate sensing, underscoring its tangible utility and expanding its potential across various fields. This demonstrates its practical relevance and underscores its versatility in diverse settings. [ABSTRACT FROM AUTHOR]

Purpose: This paper aims to investigate the corrosion kinetics and corrosion behavior of NdFeB magnets with the addition of heavy rare earth dysprosium (Dy) for its inhibitory activity on poor corrosion resistance of NdFeB magnets. Design/methodology/approach: To study the effect of dysprosium addition on corrosion behavior of NdFeB magnets and investigate its mechanism, potentiodynamic polarization, scanning electron microscopy (SEM), electrochemical impedance, energy dispersion spectrum (EDS) and scanning Kelvin probe force microscopy (SKPFM) were applied in the research. Besides, microstructures were observed by SEM equipped with EDS. Atomic force microscopy was introduced to analyze the morphology, potential image as well as the contact potential difference. The SKPFM mapping scan was applied to obtain the contact potential around Nd-rich phase at 0.1 Hz. The magnets were detected via X-ray diffraction. Findings: Substitution of Nd with Dy led to improvement of corrosion resistance and reduced the potential difference between matrix and Nd-rich phase. Corrosion resistance is Nd-rich phase < the void < metal matrix; maximum potential difference between matrix and Nd-rich phase of Dy = 0, Dy = 3 and Dy = 6 Wt.% is 411.3, 279.4 and 255.8 mV, respectively. The corrosion rate of NdFeB magnet with 6 Wt.% Dy is about 67% of that without Dy at steady corrosion stage. The addition of Dy markedly enhanced the corrosion resistance of NdFeB magnets. Originality/value: This research innovatively investigates the effect of adding heavy rare earth Dy to NdFeB permanent magnets on magnetic properties, as well as their effects on microstructure, phase structure and most importantly on corrosion resistance. Most scholars are studying the effect of element addition on magnetic properties but not on corrosion resistance. This paper creatively fills this research gap. NdFeB magnets are applied in smart cars, robotics, AI intelligence, etc. The in-depth research on corrosion resistance by adding heavy rare earths has made significant and outstanding contributions to promoting the rapid development of the rare earth industry. [ABSTRACT FROM AUTHOR]

Alzheimer's disease (AD) is the most frequent neurodegenerative disorder in the elderly aged over 65. The extracellular accumulation of beta‐amyloid (Aβ) aggregates in the brain is considered as the major event worsening the AD symptoms, but its underlying reason has remained unclear. Here the piezoelectric characteristics of Aβ aggregates are revealed. The vector piezoresponse force microscopy (PFM) analysis results exhibit that Aβ fibrils have spiraling piezoelectric domains along the length and a lateral piezoelectric constant of 44.1 pC N‐1. Also, the continuous sideband Kelvin probe force microscopy (KPFM) images display that the increment of charge‐induced surface potential on a single Aβ fibril is allowed to reach above +1700 mV in response to applied forces. These findings shed light on the peculiar mechano‐electrical surface properties of pathological Aβ fibrils that exceed those of normal body components. [ABSTRACT FROM AUTHOR]

Nanocomposites combining inorganic nanoparticles with high dielectric constant and polymers with high breakdown strength are promising for the high energy density storage of electricity, and carrier traps can significantly affect the dielectric breakdown process. Nevertheless, there still lacks direct experimental evidence on how nanoparticles affect the trap characteristics of nanocomposites, especially in a spatially resolved manner. Here, a technique is developed to image the trap distribution based on sequential Kelvin probe force microscopy (KPFM) in combination with the isothermal surface potential decay (ISPD) technique, wherein both shallow and deep trap densities and the corresponding energy levels can be mapped with nanoscale resolution. The technique is first validated using the widely‐used commercial biaxially oriented polypropylene, yielding consistent results with macroscopic ISPD. The technique is then applied to investigate polyvinylidene fluoride‐based nanocomposites filled with barium titanate nanoparticles, revealing higher deep trap density around surface‐modified nanoparticles, which correlates well with its increased breakdown strength. This technique thus provides a powerful spatially resolved tool for understanding the microscopic mechanism of dielectric breakdown of nanocomposites. [ABSTRACT FROM AUTHOR]

The crystal structure has a great influence on the dielectric and piezoelectric performance of poly(vinylidene fluoride) (PVDF). In this work, we prepared PVDF films with two typical crystalline phases (α and β). In situ Kelvin probe force microscopy (KPFM) and Piezoelectric force microscopy (PFM) were employed to investigate the responses of different PVDF crystalline phases to charge mobility, polarization, and piezoelectric properties. We used a homemade Kelvin probe force microscope (KPFM) to inject charges into the two crystalline phases to investigate the differences in the response of different crystalline phases of PVDF to electrical excitation on a microscopic scale. It was found that the α-phase has a lower charge injection barrier and is more susceptible to charge injection and that the α-phase is accompanied by a faster charge dissipation rate, which makes it easier to accumulate charge at the interface between the α-phase and β-phase PVDF. Moreover, the PFM polarization manipulation showed no change in the amplitude and phase diagram of the α-phase under ±10 V bias. In contrast, the β-phase showed a clear polarization reversal phenomenon and a significant increase in piezoelectric amplitude, which is consistent with its polar intrinsic properties. This study provides valuable insights into the multiphase contributions and a reference for designing advanced PVDF dielectrics. [ABSTRACT FROM AUTHOR]

The comparative analysis of the structural, morphological, and local electrical properties of CVD graphene films synthesized at atmospheric and low pressure CVD growth conditions was carried out. The use of electrical techniques of scanning probe microscopy, such as Kelvin probe force microscopy, scanning capacitance microscopy, electrostatic force microscopy, and conductive atomic-force microscopy for investigation of heterogeneous graphene coverage was discussed. A significant change in the surface potential values was observed indicating the formation of p-type multilayered graphene domains on single layer graphene at low pressure and n-type multilayered graphene films at atmospheric pressure CVD. The effect of Ar flow rate increasing during cooling stage in the temperature range of 700–200 °C causing graphite formation was described. The employment of surface potential spectroscopy allows to indicate the presence of nonlinear phenomena in heterogeneous graphene. [ABSTRACT FROM AUTHOR]

Understanding ultrasound‐induced charge transfer of 2D metal‐organic framework (2DMOF) nanofilms and their broad applications remain elusive. Herein, the "transfer interface‐controlled printing" 2DMOF high‐quality nanofilm is reported and in situ ultrasound‐irradiated Kelvin probe force microscopy is developed to trace the charge transfer dynamics at the nanoscale. Uniformly distributed, vertical/planar MoS2 nanosheets are grown on a porphyrin‐based 2DMOF and the local potential difference and piezoelectric polarization in these parallel and vertical 2DMOF‐MoS2 heterostructures generate a local internal polarization field to induce efficient interfacial charge transfer. This sonocatalytic platform improves electron–hole pair separation and sonocatalytic activity to boost reactive oxygen species (ROS) generation, providing a superior therapeutic effect against dental peri‐implant infection because effective ROS generation and stable Zn2+ release results in rapid peri‐implant anti‐infection and enhanced osseointegration at the bone–implant interface. This study offers a guideline for the optimization of charge transfer pathway of 2DMOF heterostructures with uniformity, thickness controllability, large‐scale and universal deposition, high catalytic efficiency, and abundant active site exposure for diverse advanced applications. [ABSTRACT FROM AUTHOR]

Emerging step‐scheme (S‐scheme) heterostructures hold unique superiority in steering directional charge transport and reinforcing redox capacity, yet rational modification of S‐scheme heterostructures by single atoms (SAs) for efficient photocatalytic H2 evolution is rarely reported. In this work, Pd SAs‐modulated organic–inorganic g‐C3N4/CdS S‐scheme heterostructures are designed and prepared by a one‐pot mechanochemical approach allowing for g‐C3N4 nanosheets/CdS nanoparticles to confine atomically dispersed Pd co‐catalysts. The g‐C3N4/CdS S‐scheme charge‐transfer pathway is corroborated by a combination of in situ irradiated X‐ray photoelectron spectroscopy, electron paramagnetic resonance, and Kelvin probe force microscopy. Density functional theory (DFT) calculations, high‐angle annular dark‐field scanning transmission electron microscopy, and X‐ray absorption fine structure identify Pd‐S3 and Pd‐N2 atomic moieties underpinned by the electronic interaction between Pd SAs and g‐C3N4/CdS heterostructures, in which the d‐band center of Pd SAs is optimized for proton adsorption thermodynamically. Further, the g‐C3N4/CdS S‐scheme heterostructures alongside Pd SAs in concert boost the rapid migration of photogenerated electrons (1.05 ps) via Pd─S and Pd─N bond‐derived channels. A maximal H2 evolution rate of 85.66 mmol h−1 g−1 is achieved by 1 wt% Pd‐20 wt% g‐C3N4/CdS hierarchical composites. This work may guide the design of high‐efficiency S‐scheme‐based photocatalysts for solar‐to‐H2 conversion and beyond. [ABSTRACT FROM AUTHOR]

A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices. [ABSTRACT FROM AUTHOR]

In situ analysis of Li plating/stripping processes and evolution of solid electrolyte interphase (SEI) are critical for optimizing all‐solid‐state Li metal batteries (ASSLMB). However, the buried solid‐solid interfaces present a challenge for detection which preclude the employment of multiple analysis techniques. Herein, by employing complementary in situ characterizations, morphological/chemical evolution, Li plating/stripping dynamics and SEI dynamics were directly detected. As a mixed ionic‐electronic conducting interface, Li|Li10GeP2S12 (LGPS) performed distinct interfacial morphological/chemical evolution and dynamics from ionic‐conducting/electronic‐isolating interface like Li|Li3PS4 (LPS), which were revealed by combination of in situ atomic force microscopy and in situ X‐ray photoelectron spectroscopy. Though Li plating speed in LGPS was higher than LPS, speed of SSE decomposition was similar and ~85 % interfacial SSE turned into SEI during plating and remained unchanged in stripping. To leverage strengths of different SSEs, an LPS‐LGPS‐LPS sandwich electrolyte was developed, demonstrating enhanced ionic conductivity and improved interfacial stability with less SSE decomposition (25 %). Using in situ Kelvin probe force microscopy, Li‐ion behavior at interface between different SSEs was effectively visualized, uncovering distribution of Li ions at LGPS|LPS interface under different potentials. [ABSTRACT FROM AUTHOR]

The optical characteristics and electrical behavior of zinc oxide nanorods (ZnO-NRs) and silver nanoparticles (Ag-NPs) were investigated using advanced scanning probe microscopy techniques. The study revealed that the ZnO nanorods had a length of about 350 nm, while the Ag nanoparticles were spherical with heights ranging from 5 to 14 nm. Measurements with Kelvin probe force microscopy (KPFM) showed that the work functions of ZnO nanorods were approximately 4.55 eV, higher than that of bulk ZnO, and the work function of Ag nanoparticles ranged from 4.54 to 4.56 eV. The electrical characterization of ZnO nanorods, silver nanoparticles, and their hybrid was also conducted using conductive atomic force microscopy (C-AFM) to determine the local current-voltage (I-V) characteristics, which revealed a characteristic similar to that of a Schottky diode. The current-voltage characteristic curves of ZnO nanorods and Ag nanoparticles both showed an increase in current at around 1 V, and the hybrid ZnONRs/AgNP exhibited an increase in turn-on voltage at around 2.5 volts. This suggested that the presence of Ag nanoparticles enhanced the electrical properties of ZnO nanorods, improving the charge carrier mobility and conduction mechanisms through a Schottky junction. The investigation also explored the optical properties of ZnO-NRs, AgNPs, and their hybrid, revealing absorption bands at 3.11 eV and 3.18 eV for ZnO-NRs and AgNPs, respectively. The hybrid material showed absorption at 3.13 eV, indicating enhanced absorption, and the presence of AgNP affected the optical properties of ZnO-NR, resulting in increased photoluminescence intensity and slightly changes in peak positions. [ABSTRACT FROM AUTHOR]

Epoxyamine matrix-based composites containing 15 wt% of Fe nanoparticles and 1.5 or 2 wt% of carbon nanotubes, as well as composites containing only Fe particles, have been studied using microwave methods and various scanning probe microscopy techniques, such as scanning capacitance microscopy and scanning Kelvin probe force microscopy. The composites were prepared using technological methods that improve their homogeneity. Probe current dependences investigated by applying different voltages to the probe in the Kelvin probe force microscopy mode have shown that the falling regions of the dependences at both positive and negative values of the bias voltage are found only for the sample containing both the Fe particles and the CNT in the "soft epoxy" matrix. Microwave measurements of the transmission and reflection coefficients were performed in the frequency range from 26 to 38 GHz. The field dependences of the microwave power dissipation have been plotted. The ferromagnetic resonance in the composites has been investigated. Frequency dependences of the complex dielectric permittivity of the composites have been determined. Microwave properties of the CNT-containing and CNT-free composites have been compared. [ABSTRACT FROM AUTHOR]

Transition metal oxides such as molybdenum oxide (MoOx) demonstrate significant potential as efficient hole‐selective passivating contacts in silicon heterojunction solar cells. Achieving efficient hole collection necessitates precise control over the optical and electrical properties of MoOx films. In this study, the effects of oxygen flow rate (FO2$F_{O_{2}} $) on the growth, optical properties, and electrical properties of thermally evaporated MoOx films are investigated. In the Kelvin probe force microscopy results, it is indicated that MoOx thin‐film deposition followed an island‐to‐layer growth model. X‐ray photoelectron spectroscopy shows that MoOx films exhibit stoichiometric composition with fully oxidized Mo6+ ions, without additional oxygen. Notably, the O 1s orbital peak shifts toward higher binding energy with increased FO2$F_{O_{2}} $, indicating defect introduction. Consequently, the work function of MoOx films decreases from 5.93 to 5.51 eV as FO2$F_{O_{2}} $ increases from 0 to 8 sccm. The maximum optical bandgap of the MoOx films exceeds 3.60 eV. As a proof of concept, FO2$F_{O_{2}} $'s impact on MoOx as a front buffer layer for dopant‐free silicon solar cells is analyzed. An efficiency of 20.8% was achieved for dopant‐free silicon solar cells after optimized MoOx film deposition, with an open‐circuit voltage of 713.7 mV, short‐circuit current density of 39.1 mA cm−2, and fill factor of 74.6%. [ABSTRACT FROM AUTHOR]

As an effective method to fabricate a large-area cross-sectional sample for lithium-ion battery electrodes, we perform in-plane polishing of LiNi0.8Co0.15Al0.05O2 (NCA) cathode samples and obtain a large cross-sectional area with a diameter of 1.5 mm. The polished cross-sections of NCA cathode particles are sufficiently flat to perform the atomic force microscopy (AFM) measurements on each cathode particle. Following AFM-based Kelvin probe force microscopy and scanning spreading resistance microscopy measurements, an identical in-plane polished NCA sample is assembled into a coin cell for the charge and discharge processes. After 90 charge/discharge cycles, the in-plane-polished sample is successfully disassembled from the coin cell without causing critical damage. In addition, a microcrack structure, which is a typical degradation feature of the cycles of NCA particles, is observed for the identical in-plane polished NCA sample. This indicates that the in-plane polishing method is effective for investigating identical NCA electrode samples before and after the charge/discharge process. Furthermore, the in-plane polishing method can be successfully applied to the large-area polishing of a Si-based anode which is a mixture of Si carbon complexes and graphite particles. This study presents a novel methodology for analyzing the degradation of lithium-ion battery electrode materials. [ABSTRACT FROM AUTHOR]

Mg-0.5Ca alloy is a potential candidate for biodegradable implants. The addition of 2 wt pct Zn and 0.5 wt pct Sn was shown to improve the degradation resistance in Hank's balanced salt solution (HBSS) at room temperature. However, the alloy exhibited excessive pitting due to the formation of numerous second phase precipitates namely Mg2Zn11 and Mg2Sn. Hence, T4 heat treatment was performed that resulted in complete dissolution of the Mg2Sn phase. This resulted in a significant reduction in the volta-potential difference between the matrix and Mg2Zn11 phase of the T4-treated alloy, as confirmed by scanning Kelvin probe force microscopy (SKPFM). The T4-treated alloy encountered less micro-galvanic attack during immersion periods in simulated body fluid owing to the smaller grains, reduced volume fraction of second phases and decreased potential difference between the phases. As a result, the T4-treated XZT020 alloy demonstrated improved corrosion resistance with fewer and smaller shallower pits on the corroded surface than the as-cast XZT020 alloy. Mg2O and Mg(OH)2 are the corrosion byproducts identified on both alloy surfaces, according to XRD investigation of the corroded surface. [ABSTRACT FROM AUTHOR]

Graphene nanoribbons show exciting electronic properties related to the exotic nature of the charge carriers and to local confinement as well as atomic-scale structural details. The local work function provides evidence for such structural, electronic, and chemical variations at surfaces. Kelvin prove force microscopy can be used to measure the local contact potential difference (LCPD) between a probe tip and a surface, related to the work function. Here we use this technique to map the LCPD of graphene nanoribbons grown on a Au(111) substrate. The LCPD data shows charge transfer between the graphene nanoribbons and the gold substrate. Our results are corroborated with density functional theory calculations, which verify that the maps reflect the doping of the nanoribbons. Our results help to understand the relation between atomic structure and electronic properties both in high-resolution images and in the distance dependence of the LCPD.

Solution-processable copper-doped non-stoichiometric molybdenum oxide (Cu:MoOx) films were prepared by a sol–gel method and applied as hole injection layer (HIL) in polymer light-emitting diodes (PLEDs). Optical transmittance spectra and scanning electron microscopy images showed that both MoOx (pristine oxide, without Cu) and Cu:MoOx films are transparent and homogeneous, and an increase in surface roughness and electrical conductivity was observed after the Cu incorporation. According to Kelvin probe force microscopy images, the average surface potential value is more negative for the Cu:MoOx(1 and 5%) films than for the MoOx film (control), suggesting that there is an increase in the number of hole carriers. In fact, it was demonstrated that the electric conductivity, surface roughness, work function, and morphology of the HIL could be tuned by varying the concentration of Cu in the MoOx films. To demonstrate possible applications of these materials, PLEDs were assembled using MoOx and Cu:MoOx films as HIL and two different emissive layers: poly[9,9-dioctylfluorenyl-2,7-diyl]-end capped with dimethylphenyl (PFO, blue light emitting polymer) and poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV, red light emitting polymer). MEH-PPV-based PLED composed of Cu:MoOx(1%) HIL delivered the best performance, with a current efficiency (ηcurr) of 313.9 mcd A−1 (at 10 V), an intense red color (CIE 0.493; 0.506), and a turn-on voltage (VON) of 4.8 V. PFO-based PLED containing the Cu:MoOx(5%) film showed the best results: ηcurr of 124 mcd A−1 (at 10 V), an intense blue color (CIE 0.168; 0.218) and VON of 4.8 V. We observed that the Cu:MoOx films promoted an enhancement in brightness and overall performance, and caused a significant change in the morphology and electroluminescence profile of the diodes. Those results opened a new range of possibilities to investigate in detail the electrical, optical, and morphological properties of MoOx and Cu:MoOx films as HIL in PLEDs. [ABSTRACT FROM AUTHOR]

Electrosynthesis of hydrogen peroxide (H2O2) based on proton exchange membrane (PEM) reactor represents a promising approach to industrial‐level H2O2 production, while it is hampered by the lack of high‐efficiency electrocatalysts in acidic medium. Herein, we present a strategy for the specific oxygen functional group (OFG) regulation to promote the H2O2 selectivity up to 92 % in acid on cobalt‐porphyrin molecular assembled with reduced graphene oxide. In situ X‐ray adsorption spectroscopy, in situ Raman spectroscopy and Kelvin probe force microscopy combined with theoretical calculation unravel that different OFGs exert distinctive regulation effects on the electronic structure of Co center through either remote (carboxyl and epoxy) or vicinal (hydroxyl) interaction manners, thus leading to the opposite influences on the promotion in 2e− ORR selectivity. As a consequence, the PEM electrolyzer integrated with the optimized catalyst can continuously and stably produce the high‐concentration of ca. 7 wt % pure H2O2 aqueous solution at 400 mA cm−2 over 200 h with a cell voltage as low as ca. 2.1 V, suggesting the application potential in industrial‐scale H2O2 electrosynthesis. [ABSTRACT FROM AUTHOR]

The dipole moment (µ) is a critical parameter in Janus structures, influencing band alignments and carrier transmissions. However, evaluating µ in 2D Janus layers is challenging due to the vast number of structures and the inefficiency of Kelvin probe force microscopy. Using the recently developed 2D Janus transition‐metal dichalcogenides (TMDCs) as a prototype, a descriptor is proposed based on fundamental parameters (atomic number and atomic radii) to investigate the relationship between atomic structures and µ. By constructing 621 structural models, this descriptor is applicable from monolayers to three‐layers. By considering shielding effect of terminal atoms, the performance of the descriptor has been significantly enhanced, resulting in a description accuracy of 94.6% for all TMDC systems. Based on this descriptor, the Anderson's Rule (AR) model can be extended to Janus bilayers in simulating band alignments, resulting in a substantial improvement in accuracy from 20.0% to 90.8%. This development holds crucial importance in screening Janus self‐doping P‐N junctions. The work provides an efficient descriptor based on inherent atomic properties for rapid determining dipole moment and band alignment in 2D Janus TMDCs, accelerating the design of devices with built‐in electronic field structures. [ABSTRACT FROM AUTHOR]

The severe stress on the surface of the wide-bandgap perovskite film will extend to the carrier transport layer (CTL)/metal electrode interface, leading to increased roughness of the CTL surface. This, in turn, adversely affects carrier transfer at the interface and compromises device stability. To address this issue, we devised a localized contact structure wherein molybdenum oxide (MoOx) interlayers of specific thickness were vacuum-deposited at the CTL/metal electrode interface to change the path of carrier transfer. Characterizations of the MoOx localized contact structure were done by Kelvin probe force microscopy, capacitance–voltage (C–V), electrochemical impedance spectroscopy, and x-ray photoelectron spectroscopy. It was observed that MoOx interlayer can generate negative fixed charges at hole transport layer/Ag interface, which changes the carrier concentration distribution, enhances the built-in voltage, and promotes the transfer of carriers near the interface. Compared to wide-bandgap perovskite solar cells (WB-PSCs, Eg = 1.65 eV) lacking the MoOx localized contact structure, the efficiency of the optimized device increased to 20.5%, accompanied by enhancements in overall performance parameters. Notably, the thermal and light stability of the unpackaged devices have been significantly improved. [ABSTRACT FROM AUTHOR]

Manipulating the crystal orientation plays a crucial role in the conversion efficiency during second harmonic generation (SHG). Here, we provide a new strategy in controlling the surface‐dependent anisotropic SHG with the precise design of (101) and (21‾ ${\bar 1}$ 0) MAGeI3 facets. Based on the SHG measurement, the (101) MAGeI3 single crystal exhibits larger SHG (1.3×(21‾ ${\bar 1}$ 0) MAGeI3). Kelvin probe force microscopy imaging shows a smaller work function for the (101) MAGeI3 compared with the (21‾ ${\bar 1}$ 0), which indirectly demonstrates the stronger intrinsic polarization on the (101) surface. X‐ray photoelectron spectroscopy confirms the band bending within the (101) facet. Temperature‐dependent steady‐state and time‐resolved photoluminescence spectroscopy show shorter lifetime and wider emission band in the (101) MAGeI3 single crystal, revealing the higher defect states. Additionally, powder X‐ray diffraction patterns show the (101) MAGeI3 possesses larger in‐plane polar units [GeI3]− density, which could directly enhance the spontaneous polarization in the (101) facet. Density functional theory (DFT) calculation further demonstrates the higher intrinsic polarization in the (101) facet compared with the (21‾ ${\bar 1}$ 0) facet, and the larger built‐in electric field in the (101) facet facilitates surface vacancy defect accumulation. Our work provides a new angle in tuning and optimizing hybrid perovskite‐based nonlinear optical materials. [ABSTRACT FROM AUTHOR]

We propose high-low frequency Kelvin probe force spectroscopy using high- and low-frequency AC bias voltages to measure the interface state density inside semiconductors. We derive an analytical expression for the electrostatic force between the tip and the sample that takes into account the charge transfer between the bulk and interface states in the semiconductor. We show that the electrostatic force between the tip and the semiconductor sample strongly depends on the capacitance of the charge depletion region on the surface and that the analysis of the electrostatic force at low- and high-frequency AC bias voltages can provide information on the interface state density in the semiconductor band gap. We also demonstrate using a pn-patterned silicon substrate that the interface state density can be measured. [ABSTRACT FROM AUTHOR]

An increase in the number of small electronics is anticipated, requiring the preparation of an adequate powering method. A triboelectric nanogenerator, capable of scavenging ambient mechanical energy, is proposed as an efficient means to reduce power consumption for self-sustainable sensors, although its electrical output needs enhancement to broaden its technological applicability. In this work, a magnetic composite comprising iron oxide and polyaniline was synthesized to augment triboelectricity through the modulation of magnetic field intensity using physical chemistry. The crystallinity of the composite, chemical bonding, and structure of the surface are analyzed. The surface potential of the composite, embedded into polydimethylsiloxane, is quantitatively evaluated by using Kelvin probe force microscopy. By amalgamating magnetic flux density and triboelectric outputs, the optimization of the triboelectric layer is achieved, yielding output values of 93.86 V, 6.9 µA, and 127.5 µW. Following a reduction in surface adhesion after the powder coating process, a wind-based triboelectric nanogenerator is fabricated. Its excellent sensitivity to wind and exceptional long-term endurance are assessed, confirming its suitability as a sensor. The practicality of employing this device in intrusion detection, leveraging a wireless door-opening sensor, is demonstrated using synthesized composite materials. [ABSTRACT FROM AUTHOR]

The heterostructure of two‐dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as‐grown MoSe2 by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS2/MoSe2 lateral heterostructure. A polymer‐free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high‐quality WS2/MoSe2 lateral heterostructure. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse compared to WS2 and MoSe2 devices, with a responsivity of 21.87 A W−1 and a detectivity of 4.2 × 1012 Jones at 350 nm. Kelvin probe force microscopy result reveals that the built‐in electric field within the heterojunction facilitates the effective separation of photogenerated electron‐hole pairs. This study carries profound implications for the CVD growth and polymer‐free transfer of TMDC heterostructures in photodetector applications. [ABSTRACT FROM AUTHOR]

In this era of demanding invulnerable security systems against the threat of hacking, physically unclonable functions (PUFs), especially in which can spawn multiple security keys within a single device, has gained attention. This investigation explores the multi‐key generable PUF devices employing organic small molecules, specifically C8‐BTBT and PTCDI‐C13. The variation stems from the formation of irregular PN junctions, haphazardly configured grain boundaries of C8‐BTBT. A comprehensive analysis including scanning electron microscopy (SEM), atomic force microscopy (AFM), kelvin probe force microscopy (KPFM), impedance spectroscopy (IS), and optical simulation, has been substantiated the underlying mechanisms. Exploiting the photo‐responsive characteristics within the light wavelength spectrum of 660 and 530 nm, alongside the electrical characteristics, the capability to generate a total of 30 distinct multi‐security keys in a single device is been successfully. These keys, distinguished by variable parameters such as voltage, light wavelength, and the calculated photo‐to‐dark current ratio (PDCR), manifest novel quantitative and qualitative dimensions in security protocol customization. Inter‐Hamming distance and entropy of these cryptographic keys exhibit commendable averages of 51.9–53.1%, and 0.81, respectively. Moreover, a noteworthy average bit‐aliasing mean value of 51.9%, derived from four distinct batches, underscores the pragmatic feasibility of the proposed conceptual framework for PUF devices. [ABSTRACT FROM AUTHOR]

The compelling demand for laser protection both for civil and defense use calls for new‐generation nonlinear optical materials. Chemical vapor deposition (CVD) techniques provide extra tricks to modulate crystal optical nonlinearity through fractal growth. The synthesized 2D NbSe2 and its fractal structures exhibit giant, broadband laser attenuation behaviors extending into the near Infrared (NIR) range. Particularly, the optical limiting performance generally correlates with the fractal dimension, where Fractal NbSe2 demonstrates enhanced third‐order optical nonlinearity at a huge nonlinear absorption coefficient of 9.7 × 10−4 m W−1 and an ultralow starting threshold of 5 mJ cm−2 at 532 nm. Various techniques include femtosecond spectroscopy, Density functional theory (DFT) calculation and Kelvin probe force microscopy disclose the origin of the strong nonlinearity of the 2D NbSe2 crystals, and suggest the formation of edge states and overall faster carrier dynamics, larger surface contact potential difference NbSe2 fractals contribute to their even augmented nonlinear responses. Fractal engineering thus opens new avenues to fabricate highly efficient laser protection materials, and the blocking of intense beam (a large attenuation factor over 13.3 dB at 532 nm) while allowing transmission of weak one (a high linear optical transmittance over 80%) fulfills the much desired "smart" defense. [ABSTRACT FROM AUTHOR]

The unique morphology of 2D van der Waals materials enables them to withstand large deformations and significant nonuniform strain, potentially inducing a strong flexoelectric effect. Despite the size‐dependent flexoelectric effect showing potential for modulating the optoelectronic performance of 2D van der Waals materials, it is far from being fully exploited owing to various challenges. Herein, the use of nanowires with different diameters as the bending media to fabricate 2D α‐In2Se3/β‐InSe heterojunctions with large curvatures of 0.1–1 µm−1 is proposed. The significant band alignment modulation in α‐In2Se3 resulting from the bending‐induced flexoelectric effect is verified through Kelvin probe force microscopy. The strain‐induced piezoelectric effect can be negated because of the weak vdW forces at the interface. The flexoelectric polarization in β‐InSe is screened via the accumulated electrons in the unilateral depleted heterojunction. Compared to the flat heterojunction, the curved heterojunction with an average curvature of 0.9 µm−1 shows 2.48‐fold and 7.62‐fold increases in open‐circuit voltage and zero‐biased responsivity, respectively. This study demonstrates the first successful modulation of photodetection in 2D heterojunctions by exploiting the flexoelectric effect, providing a new perspective for high‐performance 2D vdW optoelectronic devices. [ABSTRACT FROM AUTHOR]

The common ways to activate a chemical reaction are by heat, electric current, or light. However, mechanochemistry, where the chemical reaction is activated by applied mechanical force, is less common and only poorly understood at the atomic scale. Here we report a tip-induced activation of chemical reaction of carbon monoxide to dioxide on oxidized rutile TiO2 (110) surface. The activation is studied by atomic force microscopy, Kelvin probe force microscopy under ultrahigh-vacuum and liquid nitrogen temperature conditions, and density functional theory (DFT) modeling. The reaction is inferred from hysteretic behavior of frequency shift signal further supported by vector force mapping of vertical and lateral forces needed to trigger the chemical reaction with torque motion of carbon monoxide towards an oxygen adatom. The reaction is found to proceed stochastically at very small tip-sample distances. Furthermore, the local contact potential difference reveals the atomic-scale charge redistribution in the reactants required to unlock the reaction. Our results open up new insights into the mechanochemistry on metal oxide surfaces at the atomic scale. [ABSTRACT FROM AUTHOR]

Single crystals of (001)‐oriented 0.7Pb(Mg1/3Nb2/3)−0.3PbTiO3 (PMN‐30PT) with a composition near the morphotropic phase boundary have attracted considerable attention due to their superior dielectric and electromechanical performance. Recently, a new alternating current (electric field) poling approach used for the enhancement of dielectric and piezoelectric properties. However, the microscopic domain variants that govern the performance, especially under high‐frequency alternating current (AC) voltages, remain largely unexplored. In this work, the domain microstructure under AC poling reveals the presence of four monoclinic (MA) domain variants using a suite of scanning probe microscopy methods, and X‐ray diffraction (XRD) reciprocal space mapping is tuned. It is reported on the emergence of hierarchical fine domains – needle‐shaped, and 109° domain walls under applied high‐frequency AC poling. Time‐resolved Kelvin probe force microscopy (KPFM) reveals the charge dynamics and relaxation behavior of these needle domains and walls. The findings provide new insight and guidance to the domain engineering by high‐frequency AC poling for the development of advanced transducer technology. [ABSTRACT FROM AUTHOR]

Copolymers based on vinylidene fluoride are potential materials for ferroelectric memory elements. The trend in studies showing that a decrease in the degree of crystallinity can lead to an unexpected increase in the electric breakdown field is noted. An analysis of the literature data reveals that in fluorine-containing ferroelectric polymers, when using a bipolar triangular field, the hysteresis loop has an unclosed shape, with each subsequent loop being accompanied by a decrease in the dielectric response. In this work, the effect of the structure of self-polarized films of copolymers of vinylidene fluoride with tetrafluoroethylene and hexafluoropropylene on breakdown processes was studied. The structure of the polymer films was monitored using infrared spectroscopy (IR) and X-ray diffraction. Kelvin probe force microscopy (KPFM) was applied to characterize the local electrical properties of the polymers. For the films of the first copolymer, which crystallize in the polar β-phase, asymmetry in the dielectric response was observed at fields greater than the coercive field. For the films of the copolymers of vinylidene fluoride with hexafluoropropylene, which crystallize predominantly in the nonpolar α-phase, polarization switching processes have also been observed, but at lower electric fields. The noted phenomena will help to identify the influence of the structure of ferroelectric polymers on their electrical properties. [ABSTRACT FROM AUTHOR]

S-scheme possesses superior redox capabilities compared with the II-scheme, providing an effective method to solve the innate defects of g-C3N4 (CN). In this study, S-doped g-C3N4/g-C3N4 (SCN-tm/CN) S-scheme homojunction was constructed by rationally integrating morphology control with interfacial engineering to enhance the photocatalytic hydrogen evolution performance. In-situ Kelvin probe force microscopy (KPFM) confirms the transport of photo-generated electrons from CN to SCN. Density functional theory (DFT) calculations reveal that the generation of a built-in electric field between SCN and CN enables the carrier separation to be more efficient and effective. Femtosecond transient absorption spectrum (fs-TAS) indicates prolonged lifetimes of SCN-tm/CN3 (τ1: 9.7, τ2: 110, and τ3: 1343.5 ps) in comparison to those of CN (τ1: 4.86, τ2: 55.2, and τ3: 927 ps), signifying that the construction of homojunction promotes the separation and transport of electron hole pairs, thus favoring the photocatalytic process. Under visible light irradiation, the optimized SCN-tm/CN3 exhibits excellent photocatalytic activity with the hydrogen evolution rate of 5407.3 µmol·g−1·h−1, which is 20.4 times higher than that of CN (265.7 µmol·g−1·h−1). Moreover, the homojunction also displays an apparent quantum efficiency of 26.8% at 435 nm as well as ultra-long and ultra-stable cycle ability. This work offers a new strategy to construct highly efficient photocatalysts based on the metal-free conjugated polymeric CN for realizing solar energy conversion. [ABSTRACT FROM AUTHOR]

We present and generalize the preparation conditions and properties of strongly compensated Ge films grown on semi-insulating GaAs(100) substrates by vacuum evaporation. The films are characterized using high-resolution X-ray diffraction (HRXD), atomic force (AFM) and Kelvin probe force microscopy (KPFM), Raman spectroscopy, electroreflectance, optical absorption and temperature-dependent transport measurements. HRXD shows that an ideally pseudomorphic growth of Ge films with good single crystal structure can be obtained by this growth technique. The film microstructure and transport properties are found to depend sensitively on the Ge deposition rate. Thin (~ 100 nm) Ge films grown at low rates exhibit rough, granular morphology (RMS up to 15 nm), high resistivity (up to 140 Ω·cm), low free charge carrier mobility (~ 50 cm2/V·s) and concentration (~ 1014–1015 cm−3) and activated conductivity with an anomalously large activation energy up to half the Ge bandgap. This insulating behavior is attributed to a completely compensated, disordered state arising from Ga and As impurity incorporation and large-scale potential fluctuations. Analysis suggests a two-dimensional percolative transport mechanism, consistent with the reduced film thickness and disorder-induced carrier localization. In contrast, films deposited at higher rates are smoother, more conductive, and exhibit weak temperature dependence of the resistivity, indicative of a more ordered state. These results provide insight into the interplay between disorder, carrier localization, and transport in heavily compensated semiconductors, and highlight the critical role of growth kinetics in determining the properties of Ge-on-GaAs heterostructures. [ABSTRACT FROM AUTHOR]

Light-induced phase segregation, particularly when incorporating bromine to widen the bandgap, presents significant challenges to the stability and commercialization of perovskite solar cells. This study explores the influence of hole transport layers, specifically poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) and [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), on the dynamics of phase segregation. Through detailed characterization of the buried interface, we demonstrate that Me-4PACz enhances perovskite photostability, surpassing the performance of PTAA. Nanoscale analyses using in situ Kelvin probe force microscopy and quantitative nanomechanical mapping techniques elucidate defect distribution at the buried interface during phase segregation, highlighting the critical role of substrate wettability in perovskite growth and interface integrity. The integration of these characterization techniques provides a thorough understanding of the impact of the buried bottom interface on perovskite growth and phase segregation. [ABSTRACT FROM AUTHOR]

This electric field concentration near the anode (H-cathode) at backward bias voltage is slightly weaker than that near the anode (H-anode) at a forward bias voltage. As for sample B in the original paper, we claimed that the electric field concentration at H-cathode measured under backward bias is much higher than that at H-anode under forward bias. The electric field concentration at H-anode measured under forward bias is much higher than that at H-cathode measured under backward bias. [Extracted from the article]

Abstract It is now well‐established that ferroelectric domain walls, at which there are discontinuities in polarization, are usually electrically conducting. Yet, there is a dearth of rather basic information on the physics underpinning conductivity. Here, Kelvin Probe Force Microscopy (KPFM)‐based experiments are reported, which allow significant new insights regarding charge transport at domain walls in ErMnO3. In one set of experiments, KPFM is used to spatially map the Hall potential, developed at the surface of polished single crystals. These maps provide direct experimental evidence that n‐type head‐to‐head domain walls arise in otherwise p‐type material. In another set of experiments, the geometry for current flow is restricted, by cutting sub‐micron thick lamellar slices of ErMnO3 (using a Focused Ion Beam microscope). Separate contacts are made to n and p‐type walls and the potential profiles, when driving source‐drain currents, are measured (again using KPFM). Current‐electric field functions showed Ohmic behaviour for p‐type walls, with an intrinsic room temperature conductivity value of ≈0.4Sm−1. The n‐type walls showed non‐Ohmic behaviour and a significantly lower conductivity, supporting the prediction that electrons are in a polaronic state; an upper bound for the room temperature conductivity of the domains themselves is ≈6 × 10−6Sm−1 at 0.1 MVm−1.

Thus, defects in semiconductors remain a vibrant field of research, as highlighted by the increasing attendance of the relevant international conferences, such as the International Conference on Defects in Semiconductors.[1] The research field of defects in semiconductors encompasses a wide range of topics, combining theoretical modeling and experimental investigations. Understanding defects has been a continuous endeavor in traditional semiconductors, such as silicon (Si) and gallium arsenide, and is critical in the development of new semiconductors and components. SUMMARY OF AREAS COVERED A. Defects in group IV semiconductors Semiconductors from group IV of the periodic table, such as Si and SiC, are mature materials with decades of development, including defect studies. Defects create key functionalities in semiconductor devices by contributing with charge carriers or assisting optical transitions. [Extracted from the article]

To date, it is urgent to produce perovskite films with comparative or even better morphologies in an open-air environment. Unfortunately, a substantial number of trap states on the grain surface, especially the grain boundaries (GBs) of a perovskite layer, can bring about significant deterioration in the performance of PSCs. Trap-induced carrier recombination directly exerts a detrimental influence on the carrier collection efficiency and electronic properties of a perovskite active film. Herein, 4(5)-iodoimidazole (4II), a small organic molecule agent, was introduced to passivate the surface and bulk traps of the active film, which resulted in a controlled morphology, improved carrier extraction and suppressed ion migration for the devices fabricated in a relatively humid and O2-containing environment. Conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM) measurements were applied to study trap passivation and suppression of ion migration across the GBs of perovskite films. The results manifest that the −C＝N group preferably bonds with the less-coordinated Pb2+ and the −NH− group favorably forms hydrogen bonds with the uncoordinated I−. As a result, the champion device delivered a significantly boosted power conversion efficiency from 17.22% to 20.95%, with an improved fill factor (FF) from 70.54% to 80.40%, and improved ambient stability of the unencapsulated device. This study may probe research insight into the design of passivators with synergistic effects for morphology control and reduction of carrier recombination loss for equally efficient perovskite photovoltaics fabricated in ambient air. [ABSTRACT FROM AUTHOR]

S‐scheme heterojunction has emerging as a new star in the field of photocatalysis, attributing to its superior separation of photogenerated charge carriers and strong redox abilities. The general designing criteria and several types of S‐scheme heterojunction were provided. Advanced characterization techniques, including Kelvin probe force microscopy, electron paramagnetic resonance spectroscopy, and in‐situ irradiated X‐ray photoelectron spectroscopy, were presented for disclosing the transfer mechanism in S‐scheme heterojunctions. The recent innovations in the application of photocatalytic oxygen reduction reaction in S‐scheme heterojunction based polymeric carbon nitride photocatalyst were discussed. To conclude, this concept highlights the role of S‐scheme heterojunction in photocatalysis and gives future perspectives on their further applications. [ABSTRACT FROM AUTHOR]

In this work, the passivation and localized corrosion of selective laser melted (SLM) stainless steel 316 L when exposed to high pressures of CO2 with the presence of H2S and Cl− at 25 °C and 125 °C were studied. Depletion of Cr/Mo was observed at the cell interiors and melt-pool boundaries (MPBs) compared to the cell boundaries. Volta potential differences obtained from scanning Kelvin probe force microscopy (SKPFM) showed that the MPBs were 8–20 mV lower than the matrix, while the cell interiors were 20–50 mV lower than the cell boundaries. Electrochemical impedance spectroscopy (EIS) and Mott–Schottky tests indicated a more defective passive film at 125 °C, and X-ray photoelectron spectroscopy (XPS) confirmed the formation of a less protective film with an increased S/O ratio at 125 °C than 25 °C. Initiation of localized corrosion was observed at the MPBs and pits formed after a week of immersion were wider by an order of magnitude at 125 °C than 25 °C, with evidence of cell-interior dissolution. While passivity was observed even at elevated temperatures, local chemical heterogeneities compromised the stability of the film and contributed to localized corrosion in SLM SS316L. [ABSTRACT FROM AUTHOR]

The effect of microstructure on the corrosion behaviors of ultralow‐carbon bainitic (ULCB) steel in 3.5 wt% NaCl solution is discussed. Four ULCB steel specimens with different microstructures are designed via controlling the cooling routes after austenization, namely, furnace cooling (FC), air cooling (AC), oil cooling (OC), and water cooling (WC). Their corrosion behaviors are investigated by alternating immersion test (including weight loss and rust layer observation) and electrochemical tests (including polarization curves and electrochemical impedance spectroscopic measurements). Results show that the corrosion resistance of ULCB steel specimens decreases with increase of cooling rate, that is, in the following sequence: FC > AC > OC > WC. Furthermore, the electron backscatter diffraction characterization and scanning Kelvin probe force microscopy are performed to build the relationship between microstructure and corrosion behaviors of ULCB steels. The reduced corrosion resistance of ULCB steels results from the increased number of microgalvanic couples because of the significantly increased density of grain boundaries with increase of cooling rate. [ABSTRACT FROM AUTHOR]

Integrated logic circuits using atomically thin, two‐dimensional (2D) materials offer several potential advantages compared to established silicon technologies such as increased transistor density, circuit complexity, and lower energy dissipation leading to scaling benefits. In this article, a novel approach to achieve tunable doping in 2D semiconductors is explored to achieve complementary transistors and logic integration. By selectively transferring WSe2 onto hBN and SiO2 substrates, complementary transistor behavior (n‐ and p‐type) was achieved using a UV light source and electrostatic activation. Furthermore, advanced characterization techniques, including high‐resolution transmission electron microscopy (HRTEM) and Kelvin probe force microscopy (KPFM), provided insights into the chemical composition and surface potential changes after UV writing. Finally, a logic inverter was successfully implemented using selectively photo‐induced doped WSe2 transistors, showcasing the potential for practical logic applications. This innovative method opens new avenues for designing energy‐efficient and reconfigurable 2D semiconductor circuits, addressing key challenges in modern electronics. [ABSTRACT FROM AUTHOR]

The regulation of carrier generation and transport by Schottky junctions enables effective optoelectronic conversion in optoelectronic devices. A simple and general strategy to spontaneously generate photocurrent is of great significance for self‐powered photodetectors but is still being pursued. Here, we propose that a photocurrent can be induced at zero bias by the transmittance contrast of MXene electrodes in MXene/semiconductor Schottky junctions. Two MXene electrodes with a large transmittance contrast (84%) between the thin and thick zones were deposited on the surface of a semiconductor wafer using a simple and robust solution route. Kelvin probe force microscopy tests indicated that the photocurrent at zero bias could be attributed to asymmetric carrier generation and transport between the two Schottky junctions under illumination. As a demonstration, the MXene/GaN ultraviolet (UV) photodetector exhibits excellent performance superior to its counterpart without transmittance contrast, including high responsivity (81 mA W–1), fast response speed (less than 31 and 29 ms) and ultrahigh on/off ratio (1.33 × 106), and good UV imaging capability. Furthermore, this strategy has proven to be universal for first‐ to third‐generation semiconductors such as Si and GaAs. These results provide a facile and cost‐effective route for high‐performance self‐powered photodetectors and demonstrate the versatile and promising applications of MXene electrodes in optoelectronics. [ABSTRACT FROM AUTHOR]